Transmissive Photosensors (Photo Interrupters) CNZ1122, CNZ1128 (ON1122, ON1128) Photo Interrupters Unit : mm CNZ1122 Mark for indicating LED side 25.00.35 13.00.3 3.00.2 Device center Overview 7.0 min. 2.50.2 10.00.2 CNZ1122 and CNZ1128 are a photocoupler in which a visible light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 3.00.3 For contactless SW, object detection 2-0.450.2 *9.60.3 2-o3.20.2 19.00.2 2 3 6.20.2 Features Highly precise position detection : 1.2 mm *2.540.2 Fast response : tr, tf = 6 s (typ.) Using small package for saving mounting space (CNZ1128) Small output current variation against change in temperature 1 4 2 3 1 4 Pin connection (Note) * is dimension at the root of leads Absolute Maximum Ratings (Ta = 25C) V IF 25 mA Mark for indicating LED side PD*1 70 mW 13.00.3 3.00.2 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 30 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C Temperature *1 *2 Unit : mm CNZ1128 3 IC Input power derating ratio is 0.93 mW/C at Ta 25C. Output power derating ratio is 1.33 mW/C at Ta 25C. 3.50.2 Device center 3.00.3 Collector current Unit VR ; ; ;;; Input (Light Forward current (DC) emitting diode) Power dissipation Symbol Ratings 7.0 min. 10.00.2 2.50.2 Reverse voltage (DC) 4- 0.450.2 *9.40.3 *2.540.2 2 3 1 4 6.20.2 Parameter 2 3 1 4 Pin connection (Note) * is dimension at the root of leads Note) The part numbers in the parenthesis show conventional part number. 1 Transmissive Photosensors (Photo Interrupters) CNZ1122,CNZ1128 Electrical Characteristics (Ta = 25C) Parameter Symbol Forward voltage (DC) Input characteristics Reverse current (DC) Collector cutoff current Output characteristics Collector to emitter capacitance Conditions VF IF = 20mA IR VR = 3V ICEO min VCE = 10V, f = 1MHz 2.1 2.8 V 5 A 200 nA 5 Collector current IC VCE = 10V, IF = 15mA Transfer Response time tr , tf*1 VCC = 10V, IC = 1mA, RL = 100 characteristics Collector to emitter saturation voltage VCE(sat) IF = 25mA, IC = 0.1mA Unit pF 0.3 mA s 6 0.5 V Switching time measurement circuit Sig.IN VCC td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) (Input pulse) Sig.OUT (Output pulse) *2 RL 90% 10% td ;; ;; 50 tr tf IC classifications Class Q R S IC (mA) 0.3 to 0.75 0.55 to 1.30 >1.10 IF , IC -- Ta IF -- V F IC -- I F 10 2 32 VCE = 10V Ta = 25C IF 20 IC 10 0 - 25 0 20 40 60 80 Ambient temperature Ta (C ) 100 IC (mA) 30 24 Collector current IF (mA) Ta = 25C Forward current Forward current, collector current IF , IC (mA) 40 2 max VCE = 10V CC *2 *1 typ 16 8 0 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) 2.4 10 1 10 -1 10 -2 10 -1 1 10 Forward current IF (mA) 10 2 CNZ1122,CNZ1128 Transmissive Photosensors (Photo Interrupters) IC -- VCE IC -- Ta 10 2 1 10 -1 10 -2 10 -1 1 80 40 0 - 40 - 20 10 2 10 120 Collector to emitter voltage VCE (V) 0 20 ; 10 -1 10 -2 10 -1 tr td 90% 10% IC (%) 100 80 Relative output current tr (s) 500 10 V1 50 10 -2 10 -3 - 40 - 20 0 20 40 60 80 100 120 Ambient temperature Ta (C ) VCE = 10V Ta = 25C IF = 15mA RL = 1k Sig. V1 OUT V2 V2 RL 100 10 -1 IC -- d 10 2 VCC 80 1 VCE = 10V 100 VCC = 10V Ta = 25C Sig.IN 60 Ambient temperature Ta (C ) tr -- IC 10 3 1 40 ICEO (A) IC (%) Relative output current IC (mA) Collector current 10 Dark current VCE = 10V IF = 15mA IF = 20mA Ta = 25C Rise time ICEO -- Ta 10 160 60 Criterion 0 d 40 20 tf 1 Collector current IC (mA) 10 0 0 1 2 3 4 5 6 Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR