DISCRETE SEMICONDUCTORS DATA SHEET BFR92A NPN 5 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A FEATURES DESCRIPTION * High power gain NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. * Low noise figure * Low intermodulation distortion. 3 page PINNING APPLICATIONS * RF wideband amplifiers and oscillators. PIN 1 Top view DESCRIPTION 1 base 2 emitter 3 collector 2 MSB003 Marking code: P2p. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage - 20 V VCEO collector-emitter voltage - 15 V IC collector current (DC) - 25 mA Ptot total power dissipation Ts 95 C - 300 mW Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz 5 - GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C 8 - dB F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C 2.1 - dB VO output voltage dim = -60 dB; IC = 14 mA; VCE = 10 V; RL = 75 ; fp + fq - fr = 793.25 MHz 150 - mV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 25 mA Ptot total power dissipation - 300 mW Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Ts 95 C; note 1; see Fig.3 Note 1. Ts is the temperature at the soldering point of the collector pin. 1997 Oct 29 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 95 C; note 1 VALUE UNIT 260 K/W Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER ICBO collector leakage current CONDITIONS IE = 0; VCB = 10 V MIN. - TYP. - MAX. 50 UNIT nA hFE DC current gain IC = 15 mA; VCE = 10 V; see Fig.4 40 90 - Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; see Fig.5 - 0.6 - pF Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz - 1.2 - pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz - 0.35 - pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; see Fig.6 - 5 - GHz GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C - 14 - dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 C - 8 - dB IC = 5 mA; VCE = 10 V; f = 1 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 - 2.1 - dB IC = 5 mA; VCE = 10 V; f = 2 GHz; s = opt; Tamb = 25 C; see Figs 13 and 14 - 3 - dB F noise figure VO output voltage notes 2 and 3 - 150 - mV d2 second order intermodulation distortion notes 2 and 4; see Fig.16 - -50 - dB Notes 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB . 2 2 1 - S 11 1 - S 22 2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = -60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 ; VSWR < 2; Tamb = 25 C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz. 1997 Oct 29 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 2.2 nF handbook, full pagewidth 2.2 nF VCC VBB L3 33 k 1 nF L2 1 nF L1 1 nF 75 input 300 DUT 18 3.3 pF 75 output 0.82 pF MBB269 L1 = L3 = 5 H choke. L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. MEA425 - 1 MCD074 120 400 handbook, halfpage handbook, halfpage Ptot (mW) h FE 300 80 200 40 100 0 0 0 50 100 150 0 200 10 Ts ( o C) 20 I C (mA) 30 VCE = 10 V; Tj = 25 C. Fig.4 Fig.3 Power derating curve. 1997 Oct 29 4 DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB274 MBB275 1 6 handbook, halfpage handbook, halfpage Cc (pF) fT (GHz) 0.8 4 0.6 0.4 2 0.2 0 0 0 5 10 15 VCB (V) 20 0 10 20 IC = ic = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 500 MHz; Tamb = 25 C. Fig.5 Fig.6 Collector capacitance as a function of collector-base voltage; typical values. MBB278 handbook,30 halfpage I C (mA) Transition frequency as a function of collector current; typical values. MBB279 handbook,30 halfpage gain 30 gain (dB) (dB) MSG 20 20 MSG G UM G UM 10 10 0 0 5 10 15 20 0 25 IC (mA) 0 5 10 15 VCE = 10 V; f = 500 MHz. MSG = maximum stable gain; GUM = maximum unilateral power gain. VCE = 10 V; f = 1 GHz. MSG = maximum stable gain; GUM = maximum unilateral power gain. Fig.7 Fig.8 Gain as a function of collector current; typical values. 1997 Oct 29 5 25 20 I C (mA) Gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB280 handbook,50 halfpage MBB281 handbook,50 halfpage gain gain (dB) (dB) 40 40 G UM G UM 30 30 MSG MSG 20 20 G max 10 10 G max 0 102 10 103 f (MHz) 0 104 IC = 5 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.9 10 102 103 f (MHz) 104 IC = 15 mA; VCE = 10 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Gain as a function of frequency; typical values. Fig.10 Gain as a function of frequency; typical values. MBB277 MBB276 30 40 handbook, halfpage handbook, halfpage B S (mS) BS (mS) F = 3.5 dB 20 3.0 20 F = 3.0 dB 10 2.5 2.5 0 1.8 0 2.0 2.4 10 1.7 20 20 30 40 0 20 40 60 80 G S (mS) 0 IC = 4 mA; VCE = 10 V; f = 800 MHz. 40 G S (mS) IC = 14 mA; VCE = 10 V; f = 800 MHz. Fig.11 Circles of constant noise figure; typical values. 1997 Oct 29 20 Fig.12 Circles of constant noise figure; typical values. 6 60 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MCD081 4 MCD082 4 handbook, halfpage handbook, halfpage f = 2 GHz F (dB) I C = 15 mA F (dB) 3 10 mA 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 1 10 0 10 2 10 2 I C (mA) 10 3 f (MHz) 10 4 VCE = 10 V. VCE = 10 V. Fig.13 Minimum noise figure as a function of collector current; typical values. Fig.14 Minimum noise figure as a function of frequency; typical values. MBB282 -45 -50 d2 (dB) -40 -55 -45 -60 -50 -65 -55 d im (dB) -70 10 20 I C (mA) -60 10 30 VCE = 10 V; VO = 150 mV (43.5 dBmV); fp + fq-fr = 793.25 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2). 20 I C (mA) 30 VCE = 10 V; VO = 60 mV; fp + fq-fr = 810 MHz; Tamb = 25 C. Measured in MATV test circuit (see Fig.2). Fig.15 Intermodulation distortion; typical values. 1997 Oct 29 MBB283 -35 handbook, halfpage handbook, halfpage Fig.16 Second order intermodulation distortion; typical values. 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0.2 0 0.5 1200 1000 -j 1 2 5 10 800 500 10 200 5 0.2 100 MHz 2 0.5 MBB270 1 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C. Fig.17 Common emitter input reflection coefficient (S11); typical values. 90 handbook, full pagewidth 120 150 100 MHz 60 30 200 500 800 1200 1000 180 + 10 20 30 0 - 30 150 60 120 90 MBB273 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Fig.18 Common emitter forward transmission coefficient (S21); typical values. 1997 Oct 29 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A 90 handbook, full pagewidth 120 60 1200 MHz typ 150 1000 30 800 500 + 200 100 180 0.05 0.1 0.15 0 - 30 150 60 120 MBB271 90 IC = 14 mA; VCE = 10 V; Tamb = 25 C. Fig.19 Common emitter reverse transmission coefficient (S12); typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 -j 2 5 10 1000 800 500 1200 100 200 MHz 0.2 10 5 2 0.5 1 MBB272 IC = 14 mA; VCE = 10 V; Zo = 50 ; Tamb = 25 C. Fig.20 Common emitter output reflection coefficient (S22); typical values. 1997 Oct 29 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 Oct 29 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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