BFR92AT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of September 1995

File under discrete semiconductors, SC14

1997 Oct 29

DISCRETE SEMICONDUCTORS

BFR92A

NPN 5 GHz wideband transistor

1997 Oct 29 2

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

FEATURES

•High power gain

•Low noise figure

•Low intermodulation distortion.

APPLICATIONS

•RF wideband amplifiers and

oscillators.

DESCRIPTION

NPN wideband transistor in a plastic

SOT23 package.

PNP complement: BFT92.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector Fig.1 SOT23.

age

MSB003

Top view

Marking code: P2p.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage −20 V

VCEO collector-emitter voltage −15 V

ICcollector current (DC) −25 mA

Ptot total power dissipation Ts≤95 °C−300 mW

Cre feedback capacitance IC=i

c= 0; VCE = 10 V; f = 1 MHz 0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 5 −GHz

GUM maximum unilateral power gain IC= 15 mA; VCE = 10 V; f = 1 GHz;

Tamb =25°C14 −dB

IC= 15 mA; VCE = 10 V; f = 2 GHz;

Tamb =25°C8−dB

F noise ﬁgure IC= 5 mA; VCE = 10 V; f = 1 GHz;

Γs=Γopt; Tamb =25°C2.1 −dB

VOoutput voltage dim =−60 dB; IC= 14 mA; VCE =10V;

L=75Ω;f

p+f

q−f

r= 793.25 MHz 150 −mV

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −15 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −25 mA

Ptot total power dissipation Ts≤95 °C; note 1; see Fig.3 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

1997 Oct 29 3

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and .

2. Measured on the same die in a SOT37 package (BFR90A).

3. dim =−60 dB (DIN 45004B); IC= 14 mA; VCE = 10 V; RL=75Ω; VSWR <2; Tamb =25°C

p=V

at dim =−60 dB; fp= 795.25 MHz;

Vq=V

O−6 dB; fq= 803.25 MHz;

Vr=V

O−6 dB; fr= 805.25 MHz;

measured at fp+f

q−f

r= 793.25 MHz.

4. IC= 14 mA; VCE = 10 V; RL=75Ω; VSWR <2; Tamb =25°C

p= 60 mV at fp= 250 MHz;

Vq= 60 mV at fq= 560 MHz;

measured at fp+f

q= 810 MHz.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤95 °C; note 1 260 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current IE= 0; VCB =10V −−50 nA

hFE DC current gain IC= 15 mA; VCE = 10 V; see Fig.4 40 90 −

Cccollector capacitance IE=i

e= 0; VCB = 10 V; f = 1 MHz;

see Fig.5 −0.6 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 10 V; f = 1 MHz −1.2 −pF

Cre feedback capacitance IC=i

c= 0; VCE = 10 V; f = 1 MHz −0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V ; f = 500 MHz;

see Fig.6 −5−GHz

GUM maximum unilateral power

gain (note 1) IC= 15 mA; VCE = 10 V; f = 1 GHz;

Tamb =25°C−14 −dB

IC= 15 mA; VCE = 10 V; f = 2 GHz;

Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE = 10 V; f = 1 GHz;

Γs=Γopt; Tamb =25°C;

see Figs 13 and 14

−2.1 −dB

IC= 5 mA; VCE = 10 V; f = 2 GHz;

Γs=Γopt; Tamb =25°C;

see Figs 13 and 14

−3−dB

VOoutput voltage notes 2 and 3 −150 −mV

d2second order intermodulation

distortion notes 2 and 4; see Fig.16 −−50 −dB

GUM 10 log

21 2

11 2

–





22 2

–





-------------------------------------------------------------- dB

1997 Oct 29 4

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.

L1=L3=5µH choke.

L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.

handbook, full pagewidth

MBB269

18 Ω

2.2 nF

33 kΩ L2

1 nF

75 Ω

input

300 Ω

1 nF

2.2 nF

1 nF

0.82 pF

3.3 pF

DUT 75 Ω

output

VCC

VBB

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MEA425 - 1

150

Ptot

(mW)

Ts(oC)

Fig.4 DC current gain as a function of collector

current; typical values.

VCE = 10 V; Tj=25°C.

handbook, halfpage

0102030

120

MCD074

hFE

I (mA)

1997 Oct 29 5

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

IC=i

c= 0; f = 1 MHz; Tj=25°C.

handbook, halfpage

0 5 10 20

0.8

MBB274

0.6

0.4

0.2

(pF)

VCB (V)

Fig.6 Transition frequency as a function of

collector current; typical values.

VCE = 10 V; f = 500 MHz; Tamb =25°C.

handbook, halfpage

0102030

MBB275

I (mA)

(GHz)

Fig.7 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 500 MHz.

MSG = maximum stable gain;

GUM = maximum unilateral power gain.

handbook, halfpage

025

MBB278

510

15 20

gain

(dB)

IC (mA)

MSG

GUM

Fig.8 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 1 GHz.

MSG = maximum stable gain;

GUM = maximum unilateral power gain.

handbook, halfpage

025

MBB279

5101520

gain

(dB)

I (mA)

MSG

GUM

1997 Oct 29 6

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.9 Gain as a function of frequency;

typical values.

IC= 5 mA; VCE =10V.

UM = maximum unilateral power gain; MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

010

MBB280

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.10 Gain as a function of frequency;

typical values.

IC= 15 mA; VCE =10V.

UM = maximum unilateral power gain; MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

010

MBB281

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.11 Circles of constant noise figure;

typical values.

IC= 4 mA; VCE = 10 V; f = 800 MHz.

handbook, halfpage

02040 80

MBB277

60 G (mS)

(mS)

1.8

2.5

1.7

2.0

F = 3.0 dB

Fig.12 Circles of constant noise figure;

typical values.

IC= 14 mA; VCE = 10 V; f = 800 MHz.

handbook, halfpage

30 20 40 60

MBB276

G (mS)

(mS)

2.4

2.5

3.0

F = 3.5 dB

1997 Oct 29 7

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =10V.

handbook, halfpage

MCD081

101

(dB)

I (mA)

f = 2 GHz

1 GHz

500 MHz

102

Fig.14 Minimum noise figure as a function of

frequency; typical values.

VCE =10V.

handbook, halfpage

MCD082

(dB)

f (MHz) 104

103

102

I = 15 mA

5 mA

10 mA

Fig.15 Intermodulation distortion;

typical values.

VCE = 10 V; VO= 150 mV (43.5 dBmV);

fp+f

−f

r= 793.25 MHz; Tamb =25°C.

Measured in MATV test circuit (see Fig.2).

handbook, halfpage

10 30

−45

−70

−65

MBB282

−60

−55

−50

dim

(dB)

I (mA)

Fig.16 Second order intermodulation distortion;

typical values.

VCE = 10 V; VO= 60 mV; fp+f

−f

r= 810 MHz; Tamb =25°C.

Measured in MATV test circuit (see Fig.2).

handbook, halfpage

10 30

−35

−60

−55

MBB283

−50

−45

−40

(dB)

I (mA)

1997 Oct 29 8

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.17 Common emitter input reflection coefficient (S11); typical values.

IC= 14 mA; VCE = 10 V; Zo=50Ω; Tamb =25°C.

handbook, full pagewidth

0.2

0.5

0.2

0.5

MBB270

1200

800

500

∞

+ j

− j

10.2 10520.5

1000

200

100 MHz

Fig.18 Common emitter forward transmission coefficient (S21); typical values.

IC= 14 mA; VCE = 10 V; Tamb =25°C.

handbook, full pagewidth

MBB273

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

200

500

0°

+ ϕ

− ϕ

10 20 30

800

1000 1200

100

MHz

1997 Oct 29 9

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

Fig.19 Common emitter reverse transmission coefficient (S12); typical values.

IC= 14 mA; VCE = 10 V; Tamb =25°C.

handbook, full pagewidth

MBB271

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

1200 MHz

+ ϕ

− ϕ

0.150.05 0.1

200

500

800

1000

typ

100

Fig.20 Common emitter output reflection coefficient (S22); typical values.

IC= 14 mA; VCE = 10 V; Zo=50Ω; Tamb =25°C.

handbook, full pagewidth

0.2

0.5

0.2

0.5

MBB272

800

∞

+ j

− j

10.2 10520.5

1200

1000 500

200 100

MHz

1997 Oct 29 10

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1997 Oct 29 11

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Printed in The Netherlands 127127/00/02/pp12 Date of release: 1997 Oct 29 Document order number: 9397 750 02766