Rev. 2.4 2008-03-25
BSP298
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS IDRDS(on) Package Marking
BSP298 400 V 0.5 A 3
Ω
PG-SOT223 BSP298
Type Pb-free Tape and Reel Information
BSP298 Yes L6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 26 °C
ID 0.5
A
DC drain current, pulsed
TA = 25 °C
IDpuls 2
Avalanche energy, single pulse
ID = 1.35 A, VDD = 50 V, RGS = 25
Ω
L = 125 mH, Tj = 25 °C
EAS
130
mJ
Gate source voltage VGS
±
20 V
Power dissipation
TA = 25 °C
Ptot 1.8
W
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Packaging
Dry
1
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Rev. 2.4 2008-03-25
BSP298
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA
≤
70 K/W
Therminal resistance, junction-soldering point 1) RthJS
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C
V(BR)DSS 400 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 400 V, VGS = 0 V, Tj = 25 °C
VDS = 400 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-state resistance
VGS = 10 V, ID = 0.5 A
RDS(on) - 2.2 3
Ω
2
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Rev. 2.4 3 2008-03-25
BSP298
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 0.5 A
gfs 0.5 1.2 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 300 400
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 50 75
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 20 30
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50
Ω
td(on)
- 10 15
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50
Ω
tr
- 25 40
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50
Ω
td(off)
- 30 40
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50
Ω
tf
- 20 30
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Rev. 2.4 4 2008-03-25
BSP298
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
IS- - 0.5
A
Inverse diode direct current,pulsed
TA = 25 °C
ISM - - 2
Inverse diode forward voltage
VGS = 0 V, IF = 1 A, Tj = 25 °C
VSD - 0.95 1.2
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr - 300 -
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr - 2.5 -
µC
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Rev. 2.4 5 2008-03-25
BSP298
Power dissipation
Ptot =
ƒ
(TA)
020 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
Ptot
Drain current
ID =
ƒ
(TA)
parameter: VGS
≥
10 V
020 40 60 80 100 120 °C 160
TA
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
A
0.55
ID
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Transient thermal impedance
Zth JA =
ƒ
(tp)
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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Rev. 2.4 6 2008-03-25
BSP298
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj= 25 °C
0 1 2 3 4 5 6 7 8 V 10
VDS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
A
1.2
ID
VGS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
Ptot = 2W
l 20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0.00 0.10 0.20 0.30 0.40 A0.60
ID
0
1
2
3
4
5
6
7
8
Ω
10
RDS (on)
VGS [V] =
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
l
20.0
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
0 1 2 3 4 5 6 7 8 V 10
VGS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
A
2.6
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
0.0 0.4 0.8 1.2 1.6 A2.2
ID
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
S
2.6
gfs
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7 2008-03-25
Rev. 2.4
BSP298
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 0.5 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Ω
7.5
RDS (on)
typ
98%
Gate threshold voltage
VGS (th) =
ƒ
(Tj)
parameter: VGS = VDS,ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160
Tj
2%
typ
98%
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f= 1 MHz
0 5 10 15 20 25 30 V40
VDS
-2
10
-1
10
0
10
1
10
nF
C
Crss
Ciss
Coss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-2
10
-1
10
0
10
1
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
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Rev. 2.4 8 2008-03-25
BSP298
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 1.35 A, VDD = 50 V
RGS = 25
Ω
,L = 125 mH
20 40 60 80 100 120 °C 160
Tj
0
10
20
30
40
50
60
70
80
90
100
110
120
mJ
140
EAS
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
360
370
380
390
400
410
420
430
440
450
460
V
480
V(BR)DSS
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
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Rev. 2.4 9 2008-03-25
BSP298
Package outlines
SOT-223
Dimensions in mm
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B
SP298
R
ev. 2.4
1
0
2008-03-25
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