Ol DE Wa87S08l O0171b4 1 3878087 G E SOLID STATE oo O1E 17164 D0 | 733-73 High-Voltage Power Transistors Toe 2N5239, 2N5240 File Number 321 High-Voltage, Silicon N-P-N Transistors For High-Sveed Switching and Linear-Amplifier Applications in industrial and Commerical Service Features: | High voltage ratings: Veer{sus] =350 V, Ree = 500 (2N5240) =250 V, Ree = 50 M (2N5239) & High power dissipation rating: P= 100 Wat Voe= 125 V, Te= 25C a For switching applications where circuit values and operating conditions require a transistor with a high second-breakdown rating (Is/b) (limit line begins at 125 V) = Exceptional second-breakdown: 0.8 A at Vee = 125 V @ Maximum area-of-opsration curves for dc and pulse operation The RCA-2N5239 and 2N5240 are multi epitaxial silicon TERMINAL DESIGNATIONS n-p-n power transistors. The high breakdown voltage ratings and exceptional sec- EN (FLANGED ond-breakdown capabilities of these transistors make them , especially suitable for use inseries regulators, power ampli- fiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. These types differ in breakdown voltage and leakage current values. The 2N5239 and 2N5240 are supplied in stee! JEDEC gacs-27516 TO-204AA hermetic packages. * RCA Dev. No. TA2765 and TA2765A, respectively. JEDEC TO-204AA MAXIMUM RATINGS, Absolute-Maximum Values: 2N5239 2N5240 Veeo veces ec ecccece cnt ee neste ee eee ene E REE eee EE Ee ECE eee Tee TES ESET TITTY 300 375 v | Vcea(Sus) ' Ree = 502 250 350 v : *Vczo(sus) see 225 300 Vv *Veso Vv lg sseee A Sly cease ceceneccenseonenrenes 2 A *Py: To S 26C and Vee S 125 V 100 Ww Te S 25C and Vce = 125V... See Fig. 1 _______ To > 25C and Vce > 125 V..... See Fig. 1 "Tes Ti essence deaeeteneuneneeneeee -65 to 200 C Te At distance 21/32 in. (0.8 mm) from seating plane for 10 8 MAX. .....-eeeeeeeee rere este reese rr teter ee eee 230 C * In accordance with JEDEC registration data ae EE SEES . WES nn ee GL DE pserscas OOL?PLES 4 , 3875081 GE SOLID STATE (O18 17165 0 TSS /5 High-Voltage Power Transistors 2N5239, 2N5240 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C unless otherwise specitied TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE CURRENT Vde Ade 2N5239 2N5240 Ver Vee Ic . | Max. Min. lego (VeB = V) Vce(sat) 1.75 * In accordance with JEDEC registration data. 8 CAUTION: The sustaining voltages Vceo(sus) and Vcen(sus) MUST NOT be measured on a curve tracer. Pulsed; pulse duration = 350 ys, duty factory = 2%. Vce value. COLLECTOR-TO-EMITTER VOLTAGE (og) wv LIMITED PORTION OF OO NOT DERATE THE 4 ss Q 2 80 76 too 6128) 1800-5200 CASE TEMPERATURE (T>) C COLLECTOR CURRENTIIc}A eae -4R - Fig. 1 - Derating curves for both types. Fig. 2 Typical dc beta characteristics for both types. i ff Ol DE 3a7scs1 OO7bEL | ga7soa1 G@ E SOLID STATE aE Wise Dr BEe High-Voltage Power Transistors : _ OTE 17166 D T 33 en) 2N5239, 2N5240 CASE TEMPERATURE( Te ) 225C . {CURVES MUST GE DERATED - *or SINGLE NONREPETITIVE! PULSE LINEARLY WITH INCREASE IN TEMPERATURE) COLLECTOR-TO-EMITTER VOLTAGE (Voel V . e2CM-35179 Fig. 3 - Maximumoperating areas forboth types. COLLECTOR -TO-EMITTER VOLTAGE (Veg) 10V is > f aoe D ds o 2 3 4 5s ' BASE-TO-EMITTER VOLTAGE (Vae)V wee eee ee oas-aes Fig. 4 Typical transfer characteristics for both types. COLLECTOR-TO-EMITTER VOCTAGE (Vig) 910 V CASE TEMPERATURE (Tc}=25 C GAIN-BANDWIDTH PRODUCT (f7)Mttr on a. io Ggh-A 12L-19n0 Fig. 6 Typical gain-bandwidth product as a } function of collector current for both : types. CASE TEMPERATURE Tol= asec n> % @ COLLECTOR CURRENT {I cl-A e875 2 nv o 20 oo ne COLLECTOR-TO-EMITTEN VOLIMIE (Viog)- Fig. 6 Typical output characteristics for both types. PULSE WITH 220 pt REPETITION RATE = SOO PULSES/s COLLECTOR SUPPLY YOLTASE {o)+30 GASE TEMPERATURE (Tc )=28C a 1 2 3 g 5 & COLLECTOR CURRENT (IhA e2Us-870R Fig. 7 Typical saturated-switching time (storage) as a function of coffector current for both types. 3875081 GE SOLID state Ul DE P887s0a1 corse? 7 I>. T-R31% High-Voltage Power Transistors i : 2 5 3 5 ' 2 23 3 us 4 COALECTOR CURRENT UIA got s-1969R1 Fig. 8 Typical saturated-time (turn-on or fall) as a function of collector current for both types. Veen (ws) COLLECTOR CURRENT (Zc) mA COLLECTOR-TO-EMITTER VOLTAGE (o) SLA=(STTAL Fig. 10 ~ Oscilloscope display for Vceo{sus) and Veer(sus} measurement, 2N5239, 2N5240 PULSE GENERATOR (HEWLETT-PACKARD 212A, OR EQUIVALEAT) SWITCHING TIME MEASURED AT tgs 10 1p, 10 iB, CHANHEL 8 OSCILLOSCOPE (TEKTRONIX S4IA Of EQUIVALERT.} vas O2LS198ORE Fig. 9 Circuit used fo measure sustaining voltages, Vceo(sus) and Vcra(sus) for both types. CLARE MERCURY-RELAY MODEL No HGP-1004, DEVICE CHANNEL A Of EQUIVALENT UNDER TEST 4 To 1 1g HEWLETT-PACKARD > q Sy OsciLioscore MODEL No 1308, 802 Sp K OR EQUIVALENT o5w O fo CHANNEL B feenlsed ay 12 Yee '9) Osw Ry s COMMON + hz. ) 33 8 6v aw otosev Ty (saoma) 9ZL8-1965K2 Fig. 11 Circuit used to measure switching times for both types. + i eI Ip, Be 1 Time ae t a Tez | ANPUT wave FORM ~ I t I | ON ! ' CONDITION | r 0% : t Be : uo . YE ' g3 tL p% TIME I I ta ah : tr be ty al 1 TURN-ON TURN-OFF t TIME TIME 1 OUTPUT WAVE FORM F2CS-12874 Fig. 12 Phase relationship between input and output currents showing reference poinis for specification of switching times. 169