© 2008 Microchip Technology Inc. DS22059B-page 1
MCP414X/416X/424X/426X
Features
• Single or Dual Resistor Network options
• Potentiometer or Rheostat configuration options
• Resistor Network Resolution
- 7-bit: 128 Resistors (129 Steps)
- 8-bit: 256 Resistors (257 Steps)
•R
AB Resistances options of:
-5kΩ
-10kΩ
-50kΩ
- 100 kΩ
• Zero-Scale to Full-Scale Wiper operation
• Low Wiper Resistance: 75Ω (typical)
• Low Tempco:
- Absolute (Rheostat): 50 ppm typical
(0°C to 70°C)
- Ratiometric (Potentiometer): 15 ppm typical
• Non-volatile Memory
- Automatic Recall of Saved Wiper Setting
- WiperLock™ Technology
• SPI serial interface (10 MHz, modes 0,0 & 1,1)
- High-Speed Read/Writes to wiper registers
- Read/Write to Data EEPROM registers
- Serially enabled EEPROM write protect
- SDI/SDO multiplexing (MCP41X1 only)
• Resistor Network Terminal Disconnect Feature
via:
- Shutdown pin (SHDN)
- Terminal Control (TCON) Register
• Write Protect Feature:
- Hardware Write Protect (WP) Control pin
- Software Write Protect (WP) Configuration bit
• Brown-out reset protection (1.5V typical)
• Serial Interface Inactive current (2.5 uA typical)
• High-Voltage Tolerant Digital Inputs: Up to 12.5V
• Supports Split Rail Applications
• Internal weak pull-up on all digital inputs
• Wide Operating Voltage:
- 2.7V to 5.5V - Device Characteristics
Specified
- 1.8V to 5.5V - Device Operation
• Wide Bandwidth (-3dB) Operation:
- 2 MHz (typical) for 5.0 kΩ device
• Extended temperature range (-40°C to +125°C)
Description
The MCP41XX and MCP42XX devices offer a wide
range of product offerings using an SPI interface.
WiperLock Technology allows application-specific
calibration settings to be secured in the EEPROM.
Package Types (top view)
1
2
3
45
6
7
8
P0W
P0B
P0A
VSS
VDD
MCP41X1
Single Potentiometer
PDIP, SOIC, MSOP
CS
SDI/SDO
SCK
1
2
3
45
6
7
8
P0B
SDO
P0W
V
DD
MCP41X2
Single Rheostat
PDIP, SOIC, MSOP
1
2
3
411
12
13
14
SHDN
SDO
WP
VDD
MCP42X1 Dual Potentiometers
PDIP, SOIC, TSSOP
5
6
78
9
10
P0W
P0B
P0A
P1A
P1W
P1B
V
SS
CS
SDI
SCK
VSS
CS
SDI
SCK
4x4 QFN*
1
2
3
47
8
9
10
SDO
VDD
MCP42X2 Dual Rheostat
MSOP, DFN
56
P0B
P0W
P1W
P1B
VSS
CS
SDI
SCK
3x3 DFN*
SDI/SDO
SCK
VSS
P0B
P0W
1
2
3
4
8
7
6
5P0A
CS
EP
9
3x3 DFN*
SDI
SCK
VSS
SDO
P0B
1
2
3
4
8
7
6
5P0W
VDD
CS
EP
9
VDD
3x3 DFN*
SDI
SCK
VSS
SDO
P0B
1
2
3
4
10
9
8
7P0W
CS
EP
11
VDD
56
P1B P1W
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2
VSS
VSS
SCK WP
NC
P1B
P0B
P1W
P1A
P0A
P0W
CS
VDD
SDO
SHDN
SDI EP
16
1
15 14 13
3
4
12
11
10
9
5678
17
7/8-Bit Single/Dual SPI Digital POT with
Non-Volatile Memory
MCP414X/416X/424X/426X
DS22059B-page 2 © 2008 Microchip Technology Inc.
Device Block Diagram
Device Features
Device
# of POTs
Wiper
Configuration
Control
Interface
Memory
Type
WiperLock
Technology
POR Wiper
Setting
Resistance (typical)
# of Steps
VDD
Operating
Range (2)
RAB Options (kΩ)Wiper
- RW
(Ω)
MCP4131 (3) 1 Potentiometer
(1) SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4132 (3) 1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4141 1 Potentiometer
(1) SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4142 1 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4151 (3) 1 Potentiometer
(1) SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4152 (3) 1 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4161 1 Potentiometer
(1) SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4162 1 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4231 (3) 2 Potentiometer
(1) SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4232 (3) 2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4241 2 Potentiometer
(1) SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4242 2 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4251 (3) 2 Potentiometer
(1) SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4252 (3) 2 Rheostat SPI RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4261 2 Potentiometer
(1) SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4262 2 Rheostat SPI EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
Note 1: Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).
2: Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted.
3: Please check Microchip web site for device release and availability
Power-up/
Brown-out
Control
VDD
VSS
SPI Serial
Interface
Module &
Control
Logic
(WiperLock™
Technology)
Resistor
Network 0
(Pot 0)
Wiper 0
& TCON
Register
Resistor
Network 1
(Pot 1)
Wiper 1
& TCON
Register
CS
SCK
SDI
SDO
WP
SHDN
Memory (16x9)
Wiper0 (V & NV)
Wiper1 (V & NV)
TCON
STATUS
Data EEPROM
(10 x 9-bits)
P0A
P0W
P0B
P1A
P1W
P1B
For Dual Resistor Network
Devices Only
For Dual Potentiometer
Devices Only
© 2008 Microchip Technology Inc. DS22059B-page 3
MCP414X/416X/424X/426X
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Voltage on VDD with respect to VSS ............... -0.6V to +7.0V
Voltage on CS, SCK, SDI, SDI/SDO, WP, and
SHDN with respect to VSS ...................................... -0.6V to 12.5V
Voltage on all other pins (PxA, PxW, PxB, and
SDO) with respect to VSS ............................ -0.3V to VDD + 0.3V
Input clamp current, IIK
(VI < 0, VI > VDD, VI > VPP ON HV pins) ......................±20 mA
Output clamp current, IOK
(VO < 0 or VO > VDD) ..................................................±20 mA
Maximum output current sunk by any Output pin
......................................................................................25 mA
Maximum output current sourced by any Output pin
......................................................................................25 mA
Maximum current out of VSS pin .................................100 mA
Maximum current into VDD pin ....................................100 mA
Maximum current into PXA, PXW & PXB pins ............±2.5 mA
Storage temperature ....................................-65°C to +150°C
Ambient temperature with power applied
.....................................................................-40°C to +125°C
Total power dissipation (Note 1) ................................400 mW
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins .................................. ≥ 4 kV (HBM),
.......................................................................... ≥ 300V (MM)
Maximum Junction Temperature (TJ) ......................... +150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOI x IOL)
MCP414X/416X/424X/426X
DS22059B-page 4 © 2008 Microchip Technology Inc.
AC/DC CHARACTERISTICS
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Supply Voltage VDD 2.7 — 5.5 V
1.8 — 2.7 V Serial Interface only.
CS, SDI, SDO,
SCK, WP, SHDN
pin Voltage Range
VHV V
SS — 12.5V V VDD ≥
4.5V
The CS pin will be at one
of three input levels
(VIL, VIH or VIHH). (Note 6)
VSS —V
DD +
8.0V
VV
DD <
4.5V
VDD Start Voltage
to ensure Wiper
Reset
VBOR — — 1.65 V RAM retention voltage (VRAM) < VBOR
VDD Rise Rate to
ensure Power-on
Reset
VDDRR (Note 9)V/ms
Delay after device
exits the reset
state
(VDD > VBOR)
TBORD —1020µs
Supply Current
(Note 10) IDD — — 450 µA Serial Interface Active,
VDD = 5.5V, CS = VIL, SCK @ 5 MHz,
write all 0’s to volatile Wiper 0 (address
0h)
— — 1 mA EE Write Current,
VDD = 5.5V, CS = VIL, SCK @ 5 MHz,
write all 0’s to non-volatile Wiper 0
(address 2h)
— 2.5 5 µA Serial Interface Inactive,
CS = VIH, VDD = 5.5V
— 0.55 1 mA Serial Interface Active,
VDD = 5.5V, CS = VIHH,
SCK @ 5 MHz,
decrement non-volatile Wiper 0
(address 2h)
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
© 2008 Microchip Technology Inc. DS22059B-page 5
MCP414X/416X/424X/426X
Resistance
(± 20%)
RAB 4.0 5 6.0 kΩ-502 devices (Note 1)
8.0 10 12.0 kΩ-103 devices (Note 1)
40.0 50 60.0 kΩ-503 devices (Note 1)
80.0 100 120.0 kΩ-104 devices (Note 1)
Resolution N 257 Taps 8-bit No Missing Codes
129 Taps 7-bit No Missing Codes
Step Resistance RS —R
AB /
(256)
— Ω 8-bit Note 6
—R
AB /
(128)
— Ω 7-bit Note 6
Nominal
Resistance Match
|RAB0 - RAB1|
/ RAB
— 0.2 1.25 % MCP42X1 devices only
|RBW0 - RBW1|
/ RBW
—0.251.5 %MCP42X2 devices only,
Code = Full-Scale
Wiper Resistance
(Note 3, Note 4) RW— 75 160 ΩVDD = 5.5 V, IW = 2.0 mA, code = 00h
— 75 300 ΩVDD = 2.7 V, IW = 2.0 mA, code = 00h
Nominal
Resistance
Temp co
ΔRAB/ΔT — 50 — ppm/°C TA = -20°C to +70°C
— 100 — ppm/°C TA = -40°C to +85°C
— 150 — ppm/°C TA = -40°C to +125°C
Ratiometeric
Temp co
ΔVWB/ΔT — 15 — ppm/°C Code = Midscale (80h or 40h)
Resistor Terminal
Input Voltage
Range (Terminals
A, B and W)
VA,VW,VBVss — VDD VNote 5, Note 6
Maximum current
through A, W or B
IW——2.5mANote 6, Worst case current through
wiper when wiper is either Full-Scale or
Zero Scale.
Leakage current
into A, W or B
IWL —100—nAMCP4XX1 PxA = PxW = PxB = VSS
—100—nAMCP4XX2 PxB = PxW = VSS
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
MCP414X/416X/424X/426X
DS22059B-page 6 © 2008 Microchip Technology Inc.
Full-Scale Error
(MCP4XX1 only)
(8-bit code =
100h,
7-bit code = 80h)
VWFSE -6.0 -0.1 — LSb 5 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-4.0 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
-3.5 -0.1 —LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-2.0 -0.1 —LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
-0.8 -0.1 — LSb 50 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-0.5 -0.1 — LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
-0.5 -0.1 —LSb 100 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
-0.5 -0.1 —LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
Zero-Scale Error
(MCP4XX1 only)
(8-bit code = 00h,
7-bit code = 00h)
VWZSE —+0.1+6.0LSb5kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +3.0 LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
—+0.1 +3.5 LSb 10 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
—+0.1 +2.0 LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +0.8 LSb 50 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
— +0.1 +0.5 LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
—+0.1 +0.5 LSb 100 kΩ 8-bit 3.0V ≤ VDD ≤ 5.5V
—+0.1 +0.5 LSb 7-bit 3.0V ≤ VDD ≤ 5.5V
Potentiometer
Integral
Non-linearity
INL -1 ±0.5 +1 LSb 8-bit 3.0V ≤ VDD ≤ 5.5V
MCP4XX1 devices only
(Note 2)
-0.5 ±0.25 +0.5 LSb 7-bit
Potentiometer
Differential
Non-linearity
DNL -0.5 ±0.25 +0.5 LSb 8-bit 3.0V ≤ VDD ≤ 5.5V
MCP4XX1 devices only
(Note 2)
-0.25 ±0.125 +0.25 LSb 7-bit
Bandwidth -3 dB
(See Figure 2-58,
load = 30 pF)
BW — 2 — MHz 5 kΩ8-bit Code = 80h
— 2 — MHz 7-bit Code = 40h
—1—MHz10kΩ8-bit Code = 80h
— 1 — MHz 7-bit Code = 40h
—200—kHz50kΩ8-bit Code = 80h
— 200 — kHz 7-bit Code = 40h
—100—kHz100kΩ8-bit Code = 80h
— 100 — kHz 7-bit Code = 40h
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
© 2008 Microchip Technology Inc. DS22059B-page 7
MCP414X/416X/424X/426X
Rheostat Integral
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
R-INL -1.5 ±0.5 +1.5 LSb 5 kΩ8-bit 5.5V, IW = 900 µA
-8.25 +4.5 +8.25 LSb 3.0V, IW = 480 µA
(Note 7)
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, IW = 900 µA
-6.0 +4.5 +6.0 LSb 3.0V, IW = 480 µA
(Note 7)
-1.5 ±0.5 +1.5 LSb 10 kΩ8-bit 5.5V, IW = 450 µA
-5.5 +2.5 +5.5 LSb 3.0V, IW = 240 µA
(Note 7)
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, IW = 450 µA
-4.0 +2.5 +4.0 LSb 3.0V, IW = 240 µA
(Note 7)
-1.5 ±0.5 +1.5 LSb 50 kΩ8-bit 5.5V, IW = 90 µA
-2.0 +1 +2.0 LSb 3.0V, IW = 48 µA
(Note 7)
-1.125 ±0.5 +1.125 LSb 7-bit 5.5V, IW = 90 µA
-1.5 +1 +1.5 LSb 3.0V, IW = 48 µA
(Note 7)
-1.0 ±0.5 +1.0 LSb 100 kΩ8-bit 5.5V, IW = 45 µA
-1.5 +0.25 +1.5 LSb 3.0V, IW = 24 µA
(Note 7)
-0.8 ±0.5 +0.8 LSb 7-bit 5.5V, IW = 45 µA
-1.125 +0.25 +1.125 LSb 3.0V, IW = 24 µA
(Note 7)
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
MCP414X/416X/424X/426X
DS22059B-page 8 © 2008 Microchip Technology Inc.
Rheostat
Differential
Non-linearity
MCP41X1
(Note 4, Note 8)
MCP4XX2
devices only
(Note 4)
R-DNL -0.5 ±0.25 +0.5 LSb 5 kΩ8-bit 5.5V, IW = 900 µA
-1.0 +0.5 +1.0 LSb 3.0V (Note 7)
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 900 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
-0.5 ±0.25 +0.5 LSb 10 kΩ8-bit 5.5V, IW = 450 µA
-1.0 +0.25 +1.0 LSb 3.0V (Note 7)
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 450 µA
-0.75 +0.5 +0.75 LSb 3.0V (Note 7)
-0.5 ±0.25 +0.5 LSb 50 kΩ8-bit 5.5V, IW = 90 µA
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 90 µA
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
-0.5 ±0.25 +0.5 LSb 100 kΩ8-bit 5.5V, IW = 45 µA
-0.5 ±0.25 +0.5 LSb 3.0V (Note 7)
-0.375 ±0.25 +0.375 LSb 7-bit 5.5V, IW = 45 µA
-0.375 ±0.25 +0.375 LSb 3.0V (Note 7)
Capacitance (PA)C
AW — 75 — pF f =1 MHz, Code = Full-Scale
Capacitance (Pw)C
W— 120 — pF f =1 MHz, Code = Full-Scale
Capacitance (PB)C
BW — 75 — pF f =1 MHz, Code = Full-Scale
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
© 2008 Microchip Technology Inc. DS22059B-page 9
MCP414X/416X/424X/426X
Digita l Inputs/Outputs (CS, SDI, SDO, SCK, WP, SHDN)
Schmitt Trigger
High Input
Threshold
VIH 0.45 VDD —— V2.7V ≤ VDD ≤ 5.5V
(Allows 2.7V Digital VDD with
5V Analog VDD)
0.5 VDD —— V1.8V ≤ VDD ≤ 2.7V
Schmitt Trigger
Low Input
Threshold
VIL — — 0.2VDD V
Hysteresis of
Schmitt Trigger
Inputs
VHYS —0.1V
DD —V
High Voltage Input
Entry Voltage
VIHH 8.5 — 12.5 (6) V Threshold for WiperLock™ Technology
High Voltage Input
Exit Voltage
VIHH ——V
DD +
0.8V (6)
V
High Voltage Limit VMAX ——12.5
(6) V Pin can tolerate VMAX or less.
Output Low
Voltage (SDO)
VOL V
SS —0.3V
DD VI
OL = 5 mA, VDD = 5.5V
VSS —0.3V
DD VI
OL = 1 mA, VDD = 1.8V
Output High
Voltage (SDO)
VOH 0.7VDD —V
DD VI
OH = -2.5 mA, VDD = 5.5V
0.7VDD —V
DD VI
OL = -1 mA, VDD = 1.8V
Weak Pull-up /
Pull-down Current
IPU — — 1.75 mA Internal VDD pull-up, VIHH pull-down,
VDD = 5.5V, VCS = 12.5V
—170—µACS
pin, VDD = 5.5V, VCS = 3V
CS Pull-up /
Pull-down
Resistance
RCS —16—kΩVDD = 5.5V, VCS = 3V
Input Leakage
Current
IIL -1 — 1 µA VIN = VDD and VIN = VSS
Pin Capacitance CIN, COUT —10—pFf
C = 20 MHz
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
MCP414X/416X/424X/426X
DS22059B-page 10 © 2008 Microchip Technology Inc.
RAM (Wiper) Value
Value Range N 0h — 1FFh hex 8-bit device
0h — 1FFh hex 7-bit device
EEPROM
Endurance Endurance — 1M — Cycles
EEPROM Range N 0h — 1FFh hex
Initial Factory
Setting
N 80h hex 8-bit WiperLock Technology = Off
40h hex 7-bit WiperLock Technology = Off
EEPROM Pro-
gramming Write
Cycle Time
tWC —510ms
Power Requirements
Power Supply
Sensitivity
(MCP41X2 and
MCP42X2 only)
PSS — 0.0015 0.0035 %/% 8-bit VDD = 2.7V to 5.5V,
VA = 2.7V, Code = 80h
— 0.0015 0.0035 %/% 7-bit VDD = 2.7V to 5.5V,
VA = 2.7V, Code = 40h
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Cond itions (unless otherwise specified)
Operating Temperature –40°C ≤ TA ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS.
3: MCP4XX1 only.
4: MCP4XX2 only, includes VWZSE and VWFSE.
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
8: The MCP4XX1 is externally connected to match the configurations of the MCP41X2 and MCP42X2, and
then tested.
9: POR/BOR is not rate dependent.
10: Supply current is independent of current through the resistor network
© 2008 Microchip Technology Inc. DS22059B-page 11
MCP414X/416X/424X/426X
1.1 SPI Mode Timing Waveforms and Requirements
FIGURE 1-1: SPI Timing Waveform (Mod e = 11) .
TABLE 1-1: SPI REQUIREMENTS (MODE = 11)
# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency FSCK —10MHzV
DD = 2.7V to 5.5V
—1MHzV
DD = 1.8V to 2.7V
70 CS Active (VIL or VIHH) to SCK↑ input TcsA2scH 60 — ns
71 SCK input high time TscH 45 — ns VDD = 2.7V to 5.5V
500 — ns VDD = 1.8V to 2.7V
72 SCK input low time TscL 45 — ns VDD = 2.7V to 5.5V
500 — ns VDD = 1.8V to 2.7V
73 Setup time of SDI input to SCK↑ edge TDIV2scH 10 — ns
74 Hold time of SDI input from SCK↑ edge TscH2DIL20—ns
77 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1
80 SDO data output valid after SCK↓ edge TscL2DOV — 70 ns VDD = 2.7V to 5.5V
170 ns VDD = 1.8V to 2.7V
83 CS Inactive (VIH) after SCK↑ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V
1msV
DD = 1.8V to 2.7V
84 Hold time of CS Inactive (VIH) to
CS Active (VIL or VIHH)
TcsA2csI 50 — ns
Note 1: This specification by design.
CS
SCK
SDO
SDI
70
71
72
73
74
75, 76 77
78
79
80
SDI
MSb LSb
BIT6 - - - - - -1
MSb IN BIT6 - - - -1 LSb IN
83
84
VIH
VIL
VIHH
VIH
MCP414X/416X/424X/426X
DS22059B-page 12 © 2008 Microchip Technology Inc.
FIGURE 1-2: SPI Timing Waveform (Mod e = 00).
TABLE 1-2: SPI REQUIREMENTS (MODE = 00)
# Characteristic Symbol Min Max Units Conditions
SCK Input Frequency FSCK —10MHzV
DD = 2.7V to 5.5V
—1MHzV
DD = 1.8V to 2.7V
70 CS Active (VIL or VIHH) to SCK↑ input TcsA2scH 60 — ns
71 SCK input high time TscH 45 — ns VDD = 2.7V to 5.5V
500 — ns VDD = 1.8V to 2.7V
72 SCK input low time TscL 45 — ns VDD = 2.7V to 5.5V
500 — ns VDD = 1.8V to 2.7V
73 Setup time of SDI input to SCK↑ edge TDIV2scH 10 — ns
74 Hold time of SDI input from SCK↑ edge TscH2DIL20—ns
77 CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ— 50nsNote 1
80 SDO data output valid after SCK↓ edge TscL2DOV— 70nsV
DD = 2.7V to 5.5V
170 ns VDD = 1.8V to 2.7V
82 SDO data output valid after
CS Active (VIL or VIHH)
TssL2doV — 70 ns
83 CS Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns VDD = 2.7V to 5.5V
1msV
DD = 1.8V to 2.7V
84 Hold time of CS Inactive (VIH) to
CS Active (VIL or VIHH)
TcsA2csI 50 — ns
Note 1: This specification by design.
CS
SCK
SDO
SDI
70
71 72
82
SDI
74
75, 76
MSb BIT6 - - - - - -1 LSb
77
MSb IN BIT6 - - - -1 LSb IN
80
83
84
73
VIH
VIL
VIHH
VIH
© 2008 Microchip Technology Inc. DS22059B-page 13
MCP414X/416X/424X/426X
TABLE 1-3: SPI REQUIREMENTS FOR SDI/SDO MULTIPLEXED (READ OPERATION ONLY) (2)
Characteristic Symbol Min Max Units Conditions
SCK Input Frequency FSCK —250kHzV
DD= 2.7V to 5.5V
CS Active (VIL or VIHH) to SCK↑ input TcsA2scH 60 — ns
SCK input high time TscH 1.8 — us
SCK input low time TscL 1.8 — ns
Setup time of SDI input to SCK↑ edge TDIV2scH 40 — ns
Hold time of SDI input from SCK↑ edge TscH2DIL40—ns
CS Inactive (VIH) to SDO output hi-impedance TcsH2DOZ — 50 ns Note 1
SDO data output valid after SCK↓ edge TscL2DOV—1.6us
SDO data output valid after
CS Active (VIL or VIHH)
TssL2doV — 50 ns
CS Inactive (VIH) after SCK↓ edge TscH2csI 100 — ns
Hold time of CS Inactive (VIH) to
CS Active (VII or VIHH)
TcsA2csI 50 — ns
Note 1: This specification by design
2: This table is for the devices where the SPI’s SDI and SDO pins are multiplexed (SDI/SDO) and a Read
command is issued. This is NOT required for SDI/SDO operation with the Increment, Decrement, or Write
commands. This data rate can be increased by having external pull-up resistors to increase the rising
edges of each bit.
MCP414X/416X/424X/426X
DS22059B-page 14 © 2008 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V, VSS =GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 — +125 °C
Operating Temperature Range TA-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 8L-MSOP θJA —211—°C/W
Thermal Resistance, 8L-PDIP θJA — 89.3 — °C/W
Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W
Thermal Resistance, 8L-DFN (3x3) θJA —60—°C/W
Thermal Resistance, 10L-DFN (3x3) θJA —57—°C/W
Thermal Resistance, 10L-MSOP θJA —202—°C/W
Thermal Resistance, 14L-PDIP θJA —70—°C/W
Thermal Resistance, 14L-SOIC θJA — 95.3 — °C/W
Thermal Resistance, 14L-TSSOP θJA —100—°C/W
Thermal Resistance, 16L-QFN θJA —43—°C/W
© 2008 Microchip Technology Inc. DS22059B-page 15
MCP414X/416X/424X/426X
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-1: Device Current (IDD) vs. SPI
Frequency (fSCK) and Ambient Temperat ur e
(VDD = 2.7V and 5.5V).
FIGURE 2-2: Device Current (ISHDN) and
VDD. (CS = VDD) vs. Ambient Temperature.
FIGURE 2-3: Write Current (IWRITE) vs.
Ambient Temp er ature and VDD.
FIGURE 2-4: CS Pull-up/P ull-down
Resistance (RCS) and Current (ICS) vs. CS Input
Voltage (VCS) (VDD = 5.5V).
FIGURE 2-5: CS High Input Entry/Exit
Threshold vs. Ambient Temperature and VDD.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
50
100
150
200
250
300
350
400
450
500
550
600
650
0.00 2.00 4.00 6.00 8.00 10.00 12.00
fSCK (MHz)
Operating Current (I DD) (µA)
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 25 85 125
Ambient Temperature (°C)
Standby Current (Istby) (µA)
5.5V
2.7V
300.0
400.0
500.0
600.0
700.0
800.0
900.0
-40 25 85 125
Ambient Temperature (°C)
EE Write Current (Iwrite) (µA)
5.5V
0
50
100
150
200
250
2345678910
VCS (V)
RCS (kOhms)
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
ICS (µA)
ICS
RCS
0
2
4
6
8
10
12
-40-200 20406080100120
Ambient Temperature (°C)
CS VPP Threshold (V)
2.7V Exit
5.5V Exit
2.7V Entry
5.5V Entry
MCP414X/416X/424X/426X
DS22059B-page 16 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-6: 5k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-7: 5k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-8: 5k
Ω
– Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
FIGURE 2-9: 5k
Ω
Rheo Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-10: 5k
Ω
Rheo Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-11: 5k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (RW
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C IN L 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C 25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (RW
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
-40°C 25°C 85°C
RW
125°C
5050
5100
5150
5200
5250
5300
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R AB
)
(Ohms)
2.7V
5.5V
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (RW
)
(ohms)
-1.25
-0.75
-0.25
0.25
0.75
1.25
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
R
W
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistanc e (R W
)
(ohms)
-2
0
2
4
6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C125°C
0
1000
2000
3000
4000
5000
6000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
RWB (Ohms)
-40°C
25°C
85°C
125°C
© 2008 Microchip Technology Inc. DS22059B-page 17
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-12: 5k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-13: 5k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-14: 5k
Ω
– Power-Up Wiper
Response Time (20 ms/Div).
FIGURE 2-15: 5k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-16: 5k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 5.5V)
(1 µs/Div).
MCP414X/416X/424X/426X
DS22059B-page 18 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-17: 10 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-18: 10 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-19: 10 k
Ω
– Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
FIGURE 2-20: 10 k
Ω
Rheo Mode – R W (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-21: 10 k
Ω
Rheo Mode – R W (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-22: 10 k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
20
40
60
80
100
120
0 25 50 75 100125 150175 200225 250
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
10000
10050
10100
10150
10200
10250
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R AB
)
(Ohms)
5.5V
2.7V
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-1
-0.5
0
0.5
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-2
-1
0
1
2
3
4
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL RW
-40°C
25°C85°C
125°C
0
2000
4000
6000
8000
10000
12000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
RWB (Ohms)
-40°C
25°C
85°C
125°C
© 2008 Microchip Technology Inc. DS22059B-page 19
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-23: 10 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-24: 10 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-25: 10 k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-26: 10 k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 5.5V)
(1 µs/Div).
MCP414X/416X/424X/426X
DS22059B-page 20 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-27: 50 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-28: 50 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-29: 50 k
Ω
– Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
FIGURE 2-30: 50 k
Ω
Rheo Mode – R W (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-31: 50 k
Ω
Rheo Mode – R W (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-32: 50 k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
49400
49600
49800
50000
50200
50400
50600
50800
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R AB
)
(Ohms)
2.7V
5.5V
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-1
-0.75
-0.5
-0.25
0
0.25
0.5
0.75
1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
0
10000
20000
30000
40000
50000
60000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
RWB (Ohms)
-40°C
25°C
85°C
125°C
© 2008 Microchip Technology Inc. DS22059B-page 21
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-33: 50 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-34: 50 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-35: 50 k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-36: 50 k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 5.5V)
(1 µs/Div).
MCP414X/416X/424X/426X
DS22059B-page 22 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-37: 100 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-38: 100 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-39: 100 k
Ω
– Nominal
Resistance (
Ω
) vs. Ambient Temperature and
VDD.
FIGURE 2-40: 100 k
Ω
Rheo Mode – RW
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-41: 100 k
Ω
Rheo Mode – RW
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V).
FIGURE 2-42: 100 k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-0.2
-0.1
0
0.1
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
0.15
0.2
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C
85°C
125°C
99000
99500
100000
100500
101000
101500
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R AB
)
(Ohms)
5.5V
2.7V
20
40
60
80
100
120
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (R W
)
(ohms)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C85°C
125°C
20
60
100
140
180
220
260
300
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Wiper Resistance (Rw)
(ohms)
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
-40°C
25°C85°C
125°C
0
20000
40000
60000
80000
100000
120000
0 32 64 96 128 160 192 224 256
Wiper Setting (decimal)
Rwb (Ohms)
-40°C
25°C
85°C
125°C
© 2008 Microchip Technology Inc. DS22059B-page 23
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-43: 100 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V)
(1 µs/Div).
FIGURE 2-44: 100 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V)
(1 µs/Div).
FIGURE 2-45: 100 k
Ω
– Power-Up Wiper
Response Time (1 µs/Div).
FIGURE 2-46: 100 k
Ω
– Low-Voltage
Increment Wiper Set tlin g Time (VDD = 2.7V)
(1 µs/Div).
MCP414X/416X/424X/426X
DS22059B-page 24 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-47: Resistor Network 0 to
Resistor Network 1 RAB (5 k
Ω
) Mismatch vs. VDD
and Temperature.
FIGURE 2-48: Resistor Network 0 to
Resistor Network 1 RAB (10 k
Ω
) Mismatch vs.
VDD and Temperature.
FIGURE 2-49: Resistor Network 0 to
Resistor Network 1 RAB (50 k
Ω
) Mismatch vs.
VDD and Temperature.
FIGURE 2-50: Resistor Network 0 to
Resistor Network 1 RAB (100 k
Ω
) Mismatch vs.
VDD and Temperature.
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-40 0 40 80 120
Temperature (°C)
%
5.5V
3.0V
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
-40 0 40 80 120
Temperature (°C)
%
5.5V
3.0V
0
0.02
0.04
0.06
0.08
0.1
0.12
-40 0 40 80 120
Temperature (°C)
%
5.5V
3.0V
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
-40 10 60 110
Temperature (°C)
%
5.5V
3.0V
© 2008 Microchip Technology Inc. DS22059B-page 25
MCP414X/416X/424X/426X
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-51: VIH (SDI, SCK, CS, WP, and
SHDN) vs. VDD and Temperature.
FIGURE 2-52: VIL (SDI, SCK, CS, WP, and
SHDN) vs. VDD and Temperature.
FIGURE 2-53: IOH (SDO) vs. VDD and
Temperature.
FIGURE 2-54: IOL (SDO) vs. VDD and
Temperature.
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-40 0 40 80 120
Temperature (°C)
VIH (V)
5.5V
2.7V
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-40 0 40 80 120
Temperature (°C)
VIL (V)
5.5V
2.7V
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-40 0 40 80 120
Temperatur e (°C)
IOH (mA)
5.5V
2.7V
0
5
10
15
20
25
30
35
40
45
50
-40 0 40 80 120
Temperature (°C)
IOL (mA)
5.5V
2.7V
MCP414X/416X/424X/426X
DS22059B-page 26 © 2008 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C,
VDD =5V, V
SS = 0V.
FIGURE 2-55: Nominal EEPROM Write
Cycle Time vs. VDD and Temperature.
FIGURE 2-56: POR/BOR T rip point vs. VDD
and Temperature.
FIGURE 2-57: SCK Input Frequency vs.
Voltage and Temperature.
2.1 Test Circuits
FIGURE 2-58: -3 db Gain vs. Frequency
Test.
3.0
3.2
3.4
3.6
3.8
4.0
4.2
-40 0 40 80 120
Temperature (°C)
tWC (ms)
0
0.2
0.4
0.6
0.8
1
1.2
-40 0 40 80 120
Temperature (°C)
VDD (V)
2.7V
5.5V
12.0
12.5
13.0
13.5
14.0
14.5
15.0
-40 0 40 80 120
Temperature (°C)
fsck (MHz)
2.7V
5.5V
+
-
VOUT
2.5V DC
+5V
A
B
W
Offset
GND
VIN
© 2008 Microchip Technology Inc. DS22059B-page 27
MCP414X/416X/424X/426X
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Ta b le 3- 1.
Additional descriptions of the device pins follows.
TABLE 3-1: PINOUT DESCRIPTION FOR THE MCP414X/416X/424X/426X
Pin Weak
Pull-up/
down
(Note 2)
Standard Functio n
Single Dual
Symbol I/O Buffer
Type
Rheo Pot (1) Rheo Pot
8L 8L 10L 14L 16L
111116 CS I HV w/ST “smart” SPI Chip Select Input
2 2 2 2 1 SCK I HV w/ST “smart” SPI Clock Input
3 — 3 3 2 SDI I HV w/ST “smart” SPI Serial Data Input
— 3 — — — SDI/SDO I/O HV w/ST “smart” SPI Serial Data Input/Output
(Note 1, Note 3)
44443, 4 V
SS —P —
Ground
— — 5 5 5 P1B A Analog No Potentiometer 1 Terminal B
— — 6 6 6 P1W A Analog No Potentiometer 1 Wiper Terminal
— — — 7 7 P1A A Analog No Potentiometer 1 Terminal A
— 5 — 8 8 P0A A Analog No Potentiometer 0 Terminal A
5 6 7 9 9 P0W A Analog No Potentiometer 0 Wiper Terminal
6 7 8 10 10 P0B A Analog No Potentiometer 0 Terminal B
———1112 WP I I “smart” Hardware EEPROM Write
Protect
— — — 12 13 SHDN I HV w/ST “smart” Hardware Shutdown
7 — 9 13 14 SDO O O No SPI Serial Data Out
8 8 10 14 15 VDD —P —
Positive Power Supply Input
————11 NC — — —
No Connection
9911—17 EP — — —
Exposed Pad. (Note 4)
Legend: HV w/ST = High Voltage tolerant input (with Schmidtt trigger input)
A = Analog pins (Potentiometer terminals) I = digital input (high Z)
O = digital output I/O = Input / Output
P = Power
Note 1: The 8-lead Single Potentiometer devices are pin limited so the SDO pin is multiplexed with the SDI pin
(SDI/SDO pin). After the Address/Command (first 6-bits) are received, If a valid Read command has been
requested, the SDO pin starts driving the requested read data onto the SDI/SDO pin.
2: The pin’s “smart” pull-up shuts off while the pin is forced low. This is done to reduce the standby and shut-
down current.
3: The SDO is an open drain output, which uses the internal “smart” pull-up. The SDI input data rate can be
at the maximum SPI frequency. the SDO output data rate will be limited by the “speed” of the pull-up,
customers can increase the rate with external pull-up resistors.
4: The DFN and QFN packages have a contact on the bottom of the package. This contact is conductively
connected to the die substrate, and therefore should be unconnected or connected to the same ground as
the device’s VSS pin.
MCP414X/416X/424X/426X
DS22059B-page 28 © 2008 Microchip Technology Inc.
3.1 Chip Select (CS)
The CS pin is the serial interface’s chip select input.
Forcing the CS pin to VIL enables the serial commands.
Forcing the CS pin to VIHH enables the high-voltage
serial commands.
3.2 Serial Data In (SDI)
The SDI pin is the serial interfaces Serial Data In pin.
This pin is connected to the Host Controllers SDO pin.
3.3 Serial Data In / Serial Data Out
(SDI/SDO)
On the MCP41X1 devices, pin-out limitations do not
allow for individual SDI and SDO pins. On these
devices, the SDI and SDO pins are multiplexed.
The MCP41X1 serial interface knows when the pin
needs to change from being an input (SDI) to being an
output (SDO). The Host Controller’s SDO pin must be
properly protected from a drive conflict.
3.4 Ground (VSS)
The VSS pin is the device ground reference.
3.5 Potentiometer Terminal B
The terminal B pin is connected to the internal potenti-
ometer’s terminal B.
The potentiometer’s terminal B is the fixed connection
to the Zero Scale wiper value of the digital potentiome-
ter. This corresponds to a wiper value of 0x00 for both
7-bit and 8-bit devices.
The terminal B pin does not have a polarity relative to
the terminal W or A pins. The terminal B pin can
support both positive and negative current. The voltage
on terminal B must be between VSS and VDD.
MCP42XX devices have two terminal B pins, one for
each resistor network.
3.6 Potentiometer Wiper (W) Terminal
The terminal W pin is connected to the internal potenti-
ometer’s terminal W (the wiper). The wiper terminal is
the adjustable terminal of the digital potentiometer. The
terminal W pin does not have a polarity relative to
terminals A or B pins. The terminal W pin can support
both positive and negative current. The voltage on
terminal W must be between VSS and VDD.
MCP42XX devices have two terminal W pins, one for
each resistor network.
3.7 Potentiometer Te rminal A
The terminal A pin is available on the MCP4XX1
devices, and is connected to the internal potentiome-
ter’s terminal A.
The potentiometer’s terminal A is the fixed connection
to the Full Scale wiper value of the digital
potentiometer. This corresponds to a wiper value of
0x100 for 8-bit devices or 0x80 for 7-bit devices.
The terminal A pin does not have a polarity relative to
the terminal W or B pins. The terminal A pin can
support both positive and negative current. The voltage
on terminal A must be between VSS and VDD.
The terminal A pin is not available on the MCP4XX2
devices, and the internally terminal A signal is floating.
MCP42X1 devices have two terminal A pins, one for
each resistor network.
3.8 Write Protect (WP)
The WP pin is used to force the non-volatile memory to
be write protected.
3.9 Shutdown (SHDN)
The SHDN pin is used to force the resistor network
terminals into the hardware shutdown state.
3.10 Serial Data Out (SDO)
The SDO pin is the serial interfaces Serial Data Out pin.
This pin is connected to the Host Controllers SDI pin.
This pin allows the Host Controller to read the digital
potentiometers registers, or monitor the state of the
command error bit.
3.11 Positive Power Supply Input (VDD)
The VDD pin is the device’s positive power supply input.
The input power supply is relative to VSS.
While the device VDD < Vmin (2.7V), the electrical
performance of the device may not meet the data sheet
specifications.
3.12 No Connection (NC)
Those pins should be either connected to VDD or VSS.
3.13 Exposed Pad (EP)
This pad is conductively connected to the device's
substrate. This pad should be tied to the same potential
as the VSS pin (or left unconnected). This pad could be
used to assist as a heat sink for the device when
connected to a PCB heat sink.
© 2008 Microchip Technology Inc. DS22059B-page 29
MCP414X/416X/424X/426X
4.0 FUNCTIONAL OVERVIEW
This Data Sheet covers a family of thirty-two Digital
Potentiometer and Rheostat devices that will be
referred to as MCP4XXX. The MCP4XX1 devices are
the Potentiometer configuration, while the MCP4XX2
devices are the Rheostat configuration.
As the Device Block Diagram shows, there are four
main functional blocks. These are:
•POR/BOR Operation
•Memory Map
•Resistor Network
•Serial Interface (SPI)
The POR/BOR operation and the Memory Map are
discussed in this section and the Resistor Network and
SPI operation are described in their own sections. The
Device Commands commands are discussed in
Section 7.0.
4.1 POR/BOR Operation
The Power-on Reset is the case where the device is
having power applied to it from VSS. The Brown-out
Reset occurs when a device had power applied to it,
and that power (voltage) drops below the specified
range.
The devices RAM retention voltage (VRAM) is lower
than the POR/BOR voltage trip point (VPOR/VBOR). The
maximum VPOR/VBOR voltage is less then 1.8V.
When VPOR/VBOR < VDD < 2.7V, the electrical
performance may not meet the data sheet
specifications. In this region, the device is capable of
reading and writing to its EEPROM and incrementing,
decrementing, reading and writing to its volatile
memory if the proper serial command is executed.
4.1.1 POWER-ON RESET
When the device powers up, the device VDD will cross
the VPOR/VBOR voltage. Once the VDD voltage crosses
the VPOR/VBOR voltage the following happens:
• Volatile wiper register is loaded with value in the
corresponding non-volatile wiper register
• The TCON register is loaded it’s default value
• The device is capable of digital operation
4.1.2 BROWN-OUT RESET
When the device powers down, the device VDD will
cross the VPOR/VBOR voltage.
Once the VDD voltage decreases below the VPOR/VBOR
voltage the following happens:
• Serial Interface is disabled
• EEPROM Writes are disabled
If the VDD voltage decreases below the VRAM voltage
the following happens:
• Volatile wiper registers may become corrupted
• TCON register may become corrupted
As the voltage recovers above the VPOR/VBOR voltage
see Section 4.1.1 “Power-on Reset”.
Serial commands not completed due to a brown-out
condition may cause the memory location (volatile and
non-volatile) to become corrupted.
4.2 M emory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and non-volatile locations (see Table 4-1).
TABLE 4-1: MEMORY MAP
Address Function Memory Type
00h Volatile Wiper 0 RAM
01h Volatile Wiper 1 RAM
02h Non-Volatile Wiper 0 EEPROM
03h Non-Volatile Wiper 1 EEPROM
04h Volatile TCON Register RAM
05h Status Register RAM
06h Data EEPROM EEPROM
07h Data EEPROM EEPROM
08h Data EEPROM EEPROM
09h Data EEPROM EEPROM
0Ah Data EEPROM EEPROM
0Bh Data EEPROM EEPROM
0Ch Data EEPROM EEPROM
0Dh Data EEPROM EEPROM
0Eh Data EEPROM EEPROM
0Fh Data EEPROM EEPROM
MCP414X/416X/424X/426X
DS22059B-page 30 © 2008 Microchip Technology Inc.
4.2.1 NON-VOLATILE MEMORY
(EEPROM)
This memory can be grouped into two uses of
non-volatile memory. These are:
•General Purpose Registers
•Non-Volatile Wiper Registers
The non-volatile wipers starts functioning below the
devices VPOR/VBOR trip point.
4.2.1.1 General Purpose Registers
These locations allow the user to store up to 10 (9-bit)
locations worth of information.
4.2.1.2 Non-Volatile Wiper Registers
These locations contain the wiper values that are
loaded into the corresponding volatile wiper register
whenever the device has a POR/BOR event. There are
up to two registers, one for each resistor network.
The non-volatile wiper register enables stand-alone
operation of the device (without Microcontroller control)
after being programmed to the desired value.
4.2.1.3 Factory Initialization of Non-Volatile
Memory (EEPROM)
The Non-Volatile Wiper values will be initialized to
mid-scale value. This is shown in Table 4-2.
The General purpose EEPROM memory will be
programmed to a default value of 0xFF.
It is good practice in the manufacturing flow to
configure the device to your desired settings.
TABLE 4-2: DEFAULT FACTORY
SETTINGS SELECTION
4.2.1.4 Special Features
There are 3 non-volatile bits that are not directly
mapped into the address space. These bits control the
following functions:
• EEPROM Write Protect
• WiperLock Technology for Non-Volatile Wiper 0
• WiperLock Technology for Non-Volatile Wiper 1
The operation of WiperLock Technology is discussed in
Section 5.3. The state of the WL0, WL1, and WP bits
is reflected in the STATUS register (see Register 4-1).
EEPROM Write Protect
All internal EEPROM memory can be Write Protected.
When EEPROM memory is Write Protected, Write
commands to the internal EEPROM are prevented.
Write Protect (WP) can be enabled/disabled by two
methods. These are:
• External WP Hardware pin (MCP42X1 devices
only)
• Non-Volatile configuration bit
High Voltage commands are required to enable and
disable the nonvolatile WP bit. These commands are
shown in Section 7.9 “Modify Write Protect or Wip-
erLock Technology (High Voltage)”.
To write to EEPROM, both the external WP pin and the
internal WP EEPROM bit must be disabled. Write
Protect does not block commands to the volatile
registers.
4.2.2 VOLATILE MEMORY (RAM)
There are four Volatile Memory locations. These are:
• Volatile Wiper 0
• Volatile Wiper 1
(Dual Resistor Network devices only)
• Status Register
• Terminal Control (TCON) Register
The volatile memory starts functioning at the RAM
retention voltage (VRAM).
Resistance
Code
Typical
RAB Value
Default POR
Wiper Setting
Wiper
Code
WiperLock™
Technology and
Write Protect Setting
8-bit 7-bit
-502 5.0 kΩMid-scale 80h 40h Disabled
-103 10.0 kΩMid-scale 80h 40h Disabled
-503 50.0 kΩMid-scale 80h 40h Disabled
-104 100.0 kΩMid-scale 80h 40h Disabled
© 2008 Microchip Technology Inc. DS22059B-page 31
MCP414X/416X/424X/426X
4.2.2.1 Status (STATUS) Register
This register contains 5 status bits. These bits show the
state of the WiperLock bits, the Shutdown bit the Write
Protect bit, and if an EEPROM write cycle is active. The
STATUS register can be accessed via the READ
commands. Register 4-1 describes each STATUS
register bit.
The STATUS register is placed at Address 05h.
REGISTER 4-1: STAT US REGISTER
R-1 R-1 R-1 R-1 R-0 R-x R-x R-x R-x
D8:D5 EEWA WL1 (1) WL0 (1) SHDN WP (1)
bit 7 bit 0
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown
bit 8-5 D8:D5: Reserved. Forced to “1”
bit 4 EEWA: EEPROM Write Active Status bit
This bit indicates if the EEPROM Write Cycle is occurring.
1 = An EEPROM Write cycle is currently occurring. Only serial commands to the Volatile memory
locations are allowed (addresses 00h, 01h, 04h, and 05h)
0 = An EEPROM Write cycle is NOT currently occurring
bit 3 WL1: WiperLock Status bit for Resistor Network 1 (Refer to Sectio n 5.3 “WiperLock™ Technology”
for further information)
WiperLock (WL) prevents the Volatile and Non-Volatile Wiper 1 addresses and the TCON register bits
R1HW, R1A, R1W, and R1B from being written to. High Voltage commands are required to enable and
disable WiperLock Technology.
1 = Wiper and TCON register bits R1HW, R1A, R1W, and R1B of Resistor Network 1 (Pot 1) are
“Locked” (Write Protected)
0 = Wiper and TCON of Resistor Network 1 (Pot 1) can be modified
Note: The WL1 bit always reflects the result of the last programming cycle to the non-volatile WL1
bit. After a POR or BOR event, the WL1 bit is loaded with the non-volatile WL1 bit value.
bit 2 WL0: WiperLock Status bit for Resistor Network 0 (Refer to Sectio n 5.3 “WiperLock™ Technology”
for further information)
The WiperLock Technology bits (WLx) prevents the Volatile and Non-Volatile Wiper 0 addresses and the
TCON register bits R0HW, R0A, R0W, and R0B from being written to. High Voltage commands are
required to enable and disable WiperLock Technology.
1 = Wiper and TCON register bits R0HW, R0A, R0W, and R0B of Resistor Network 0 (Pot 0) are
“Locked” (Write Protected)
0 = Wiper and TCON of Resistor Network 0 (Pot 0) can be modified
Note: The WL0 bit always reflects the result of the last programming cycle to the non-volatile WL0
bit. After a POR or BOR event, the WL0 bit is loaded with the non-volatile WL0 bit value.
bit 1 SHDN: Hardware Shutdown pin Status bit (Refer to Section 5.4 “Shutdown” for further information)
This bit indicates if the Hardware shutdown pin (SHDN) is low. A hardware shutdown disconnects the
Terminal A and forces the wiper (Terminal W) to Terminal B (see Figure 5-2). While the device is in
Hardware Shutdown (the SHDN pin is low) the serial interface is operational so the STATUS register
may be read.
1 = MCP4XXX is in the Hardware Shutdown state
0 = MCP4XXX is NOT in the Hardware Shutdown state
Note 1: Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
MCP414X/416X/424X/426X
DS22059B-page 32 © 2008 Microchip Technology Inc.
bit 0 WP: EEPROM Write Protect Status bit (Refer to Section “EEPROM Write Protect” for further
information)
This bit indicates the status of the write protection on the EEPROM memory. When Write Protect is
enabled, writes to all non-volatile memory are prevented. This includes the General Purpose EEPROM
memory, and the non-volatile Wiper registers. Write Protect does not block modification of the volatile
wiper register values or the volatile TCON register value (via Increment, Decrement, or Write
commands).
This status bit is an OR of the devices Write Protect pin (WP) and the internal non-volatile WP bit. High
Voltage commands are required to enable and disable the internal WP EEPROM bit.
1 = EEPROM memory is Write Protected
0 = EEPROM memory can be written
REGISTER 4-1: STAT US REGISTER (CONTINUED)
Note 1: Requires a High Voltage command to modify the state of this bit (for Non-Volatile devices only). This bit is
Not directly written, but reflects the system state (for this feature).
© 2008 Microchip Technology Inc. DS22059B-page 33
MCP414X/416X/424X/426X
4.2.2.2 Terminal Control (TCON) Register
This register contains 8 control bits. Four bits are for
Wiper 0, and four bits are for Wiper 1. Register 4-2
describes each bit of the TCON register.
The state of each resistor network terminal connection
is individually controlled. That is, each terminal
connection (A, B and W) can be individually connected/
disconnected from the resistor network. This allows the
system to minimize the currents through the digital
potentiometer.
The value that is written to this register will appear on
the resistor network terminals when the serial
command has completed.
When the WL1 bit is enabled, writes to the TCON
register bits R1HW, R1A, R1W, and R1B are inhibited.
When the WL0 bit is enabled, writes to the TCON
register bits R0HW, R0A, R0W, and R0B are inhibited.
On a POR/BOR this register is loaded with
1FFh (9-bits), for all terminals connected. The
HostController needs to detect the POR/BOR event
and then update the Volatile TCON register value.
MCP414X/416X/424X/426X
DS22059B-page 34 © 2008 Microchip Technology Inc.
REGISTER 4-2: TCON BITS (1, 2)
R-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1 R/W-1
D8 R1HW R1A R1W R1B R0HW R0A R0W R0B
bit 8 bit 0
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown
bit 8 D8: Reserved. Forced to “1”
bit 7 R1HW: Resistor 1 Hardware Configuration Control bit
This bit forces Resistor 1 into the “shutdown” configuration of the Hardware pin
1 = Resistor 1 is NOT forced to the hardware pin “shutdown” configuration
0 = Resistor 1 is forced to the hardware pin “shutdown” configuration
bit 6 R1A: Resistor 1 Terminal A (P1A pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal A to the Resistor 1 Network
1 = P1A pin is connected to the Resistor 1 Network
0 = P1A pin is disconnected from the Resistor 1 Network
bit 5 R1W: Resistor 1 Wiper (P1W pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Wiper to the Resistor 1 Network
1 = P1W pin is connected to the Resistor 1 Network
0 = P1W pin is disconnected from the Resistor 1 Network
bit 4 R1B: Resistor 1 Terminal B (P1B pin) Connect Control bit
This bit connects/disconnects the Resistor 1 Terminal B to the Resistor 1 Network
1 = P1B pin is connected to the Resistor 1 Network
0 = P1B pin is disconnected from the Resistor 1 Network
bit 3 R0HW: Resistor 0 Hardware Configuration Control bit
This bit forces Resistor 0 into the “shutdown” configuration of the Hardware pin
1 = Resistor 0 is NOT forced to the hardware pin “shutdown” configuration
0 = Resistor 0 is forced to the hardware pin “shutdown” configuration
bit 2 R0A: Resistor 0 Terminal A (P0A pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal A to the Resistor 0 Network
1 = P0A pin is connected to the Resistor 0 Network
0 = P0A pin is disconnected from the Resistor 0 Network
bit 1 R0W: Resistor 0 Wiper (P0W pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Wiper to the Resistor 0 Network
1 = P0W pin is connected to the Resistor 0 Network
0 = P0W pin is disconnected from the Resistor 0 Network
bit 0 R0B: Resistor 0 Terminal B (P0B pin) Connect Control bit
This bit connects/disconnects the Resistor 0 Terminal B to the Resistor 0 Network
1 = P0B pin is connected to the Resistor 0 Network
0 = P0B pin is disconnected from the Resistor 0 Network
Note 1: The hardware SHDN pin (when active) overrides the state of these bits. When the SHDN pin returns to the
inactive state, the TCON register will control the state of the terminals. The SHDN pin does not modify the
state of the TCON bits.
2: These bits do not affect the wiper register values.
© 2008 Microchip Technology Inc. DS22059B-page 35
MCP414X/416X/424X/426X
5.0 RESISTOR NETWORK
The Resistor Network has either 7-bit or 8-bit
resolution. Each Resistor Network allows zero scale to
full scale connections. Figure 5-1 shows a block
diagram for the resistive network of a device.
The Resistor Network is made up of several parts.
These include:
• Resistor Ladder
•Wiper
• Shutdown (Terminal Connections)
Devices have either one or two resistor networks,
These are referred to as Pot 0 and Pot 1.
FIGURE 5-1: Resistor Block Diagram.
5.1 Resistor Ladder Module
The resistor ladder is a series of equal value resistors
(RS) with a connection point (tap) between the two
resistors. The total number of resistors in the series
(ladder) determines the RAB resistance (see
Figure 5-1). The end points of the resistor ladder are
connected to analog switches which are connected to
the device Terminal A and Terminal B pins. The RAB
(and RS) resistance has small variations over voltage
and temperature.
For an 8-bit device, there are 256 resistors in a string
between terminal A and terminal B. The wiper can be
set to tap onto any of these 256 resistors thus providing
257 possible settings (including terminal A and terminal
B).
For a 7-bit device, there are 128 resistors in a string
between terminal A and terminal B. The wiper can be
set to tap onto any of these 128 resistors thus providing
129 possible settings (including terminal A and terminal
B).
Equation 5-1 shows the calculation for the step
resistance.
EQUATION 5-1: RS CALCULATION
RS
A
RS
RS
RS
B
257
256
255
1
0
RW (1)
W
(01h)
Analog Mux
RW (1) (00h)
RW (1) (FEh)
RW (1) (FFh)
RW (1) (100h)
Note 1: The wiper resistance is dependent on
several factors including, wiper code,
device VDD, Terminal voltages (on A, B,
and W), and temperature.
Also for the same conditions, each tap
selection resistance has a small variation.
This RW variation has greater effects on
some specifications (such as INL) for the
smaller resistance devices (5.0 kΩ)
compared to larger resistance devices
(100.0 kΩ).
RAB
8-Bit
N =
128
127
126
1
0
(01h)
(00h)
(7Eh)
(7Fh)
(80h)
7-Bit
N =
RSRAB
256()
-------------=
RSRAB
128()
--------------=
8-bit Device
7-bit Device
MCP414X/416X/424X/426X
DS22059B-page 36 © 2008 Microchip Technology Inc.
5.2 Wiper
Each tap point (between the RS resistors) is a
connection point for an analog switch. The opposite
side of the analog switch is connected to a common
signal which is connected to the Terminal W (Wiper)
pin.
A value in the volatile wiper register selects which
analog switch to close, connecting the W terminal to
the selected node of the resistor ladder.
The wiper can connect directly to Terminal B or to
Terminal A. A zero-scale connections, connects the
Terminal W (wiper) to Terminal B (wiper setting of
000h). A full-scale connections, connects the Terminal
W (wiper) to Terminal A (wiper setting of 100h or 80h).
In these configurations the only resistance between the
Terminal W and the other Terminal (A or B) is that of the
analog switches.
A wiper setting value greater than full scale (wiper
setting of 100h for 8-bit device or 80h for 7-bit devices)
will also be a Full Scale setting (Terminal W (wiper)
connected to Terminal A). Ta b le 5 - 1 illustrates the full
wiper setting map.
Equation 5-2 illustrates the calculation used to deter-
mine the resistance between the wiper and terminal B.
EQUATION 5-2: RWB CALCULATION
TABLE 5-1: VOLATILE WIPER VALUE VS.
WIPER POSITION MAP
5.3 WiperLock™ Technology
The MCP4XXX device’s WiperLock technology allows
application-specific calibration settings to be secured in
the EEPROM without requiring the use of an additional
write-protect pin. There are two WiperLock Technology
configuration bits (WL0 and WL1). These bits prevent
the Non-Volatile and Volatile addresses and bits for the
specified resistor network from being written.
The WiperLock technology prevents the serial
commands from doing the following:
• Changing a volatile wiper value
• Writing to a non-volatile wiper memory location
• Changing the volatile TCON register value
For either Resistor Network 0 or Resistor Network 1
(Potx), the WLx bit controls the following:
• Non-Volatile Wiper Register
• Volatile Wiper Register
• Volatile TCON register bits RxHW, RxA, RxW, and
RxB
High Voltage commands are required to enable and
disable WiperLock. Please refer to the Modify Write
Protect or WiperLock Technology (High Voltage)
command for operation.
5.3.1 POR/BOR OPERATION WHEN
WIPERLOCK TECHNOLOGY
ENABLED
The WiperLock Technology state is not affected by a
POR/BOR event. A POR/BOR event will load the
Volatile Wiper register value with the Non-Volatile
Wiper register value, refer to Section 4.1.
Wiper Setting Properties
7-bit Pot 8-bit Pot
3FFh
081h
3FFh
101h
Reserved (Full Scale (W = A)),
Increment and Decrement
commands ignored
080h 100h Full Scale (W = A),
Increment commands ignored
07Fh
041h
0FFh
081
W = N
040h 080h W = N (Mid-Scale)
03Fh
001h
07Fh
001
W = N
000h 000h Zero Scale (W = B)
Decrement command ignored
© 2008 Microchip Technology Inc. DS22059B-page 37
MCP414X/416X/424X/426X
5.4 Shutdown
Shutdown is used to minimize the device’s current
consumption. The MCP4XXX has two methods to
achieve this. These are:
•Hardware Shutdown Pin (SHDN)
•Terminal Control Register (TCON)
The Hardware Shutdown pin is backwards compatible
with the MCP42XXX devices.
5.4.1 HARDWARE SHUTDOWN PIN
(SHDN)
The SHDN pin is available on the dual potentiometer
devices. When the SHDN pin is forced active (VIL):
• The P0A and P1A terminals are disconnected
• The P0W and P1W terminals are simultaneously
connect to the P0B and P1B terminals,
respectively (see Figure 5-2)
• The Serial Interface is NOT disabled, and all
Serial Interface activity is executed
• Any EEPROM write cycles are completed
The Hardware Shutdown pin mode does NOT corrupt
the values in the Volatile Wiper Registers nor the
TCON register. When the Shutdown mode is exited
(SHDN pin is inactive (VIH)):
• The device returns to the Wiper setting specified
by the Volatile Wiper value
• The TCON register bits return to controlling the
terminal connection state
FIGURE 5-2: Hardware Shutdown
Resistor Network Configuration.
5.4.2 TERMINAL CONTROL REGISTER
(TCON)
The Terminal Control (TCON) register is a volatile
register used to configure the connection of each
resistor network terminal pin (A, B, and W) to the
Resistor Network. This register is shown in
Register 4-2.
The RxHW bits forces the selected resistor network
into the same state as the SHDN pin. Alternate low
power configurations may be achieved with the RxA,
RxW, and RxB bits.
5.4.3 INTERACTION OF SHDN PIN AND
TCON REGISTER
Figure 5-3 shows how the SHDN pin signal and the
RxHW bit signal interact to control the hardware
shutdown of each resistor network (independently).
Using the TCON bits allows each resistor network (Pot
0 and Pot 1) to be individually “shutdown” while the
hardware pin forces both resistor networks to be
“shutdown” at the same time.
FIGURE 5-3: RxHW bit and SHDN pin
Interaction.
A
B
W
Resistor Network
Note: When the RxHW bit forces the resistor
network into the hardware SHDN state,
the state of the TCON register RxA, RxW,
and RxB bits is overridden (ignored).
When the state of the RxHW bit no longer
forces the resistor network into the
hardware SHDN state, the TCON register
RxA, RxW, and RxB bits return to control-
ling the terminal connection state. In other
words, the RxHW bit does not corrupt the
state of the RxA, RxW, and RxB bits.
SHDN (from pin)
RxHW
(from TCON register)
To Pot x Hardware
Shutdown Control
MCP414X/416X/424X/426X
DS22059B-page 38 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 39
MCP414X/416X/424X/426X
6.0 SERIAL INTERFACE (SPI)
The MCP4XXX devices support the SPI serial protocol.
This SPI operates in the slave mode (does not
generate the serial clock).
The SPI interface uses up to four pins. These are:
•CS
- Chip Select
• SCK - Serial Clock
• SDI - Serial Data In
• SDO - Serial Data Out
Typical SPI Interfaces are shown in Figure 6-1. In the
SPI interface, The Master’s Output pin is connected to
the Slave’s Input pin and the Master’s Input pin is
connected to the Slave’s Output pin.
The MCP4XXX SPI’s module supports two (of the four)
standard SPI modes. These are Mode 0,0 and 1,1.
The SPI mode is determined by the state of the SCK
pin (VIH or VIL) on the when the CS pin transitions from
inactive (VIH) to active (VIL or VIHH).
All SPI interface signals are high-voltage tolerant.
FIGURE 6-1: Typical SPI Interface Block Diagram.
SDI/SDO SDI
SDO
SDO
SDI R1
(2)
MCP41X1
SCK SCK
SDI
SDO
MCP4XXX
SDO
SDI
SCK
SCK
( Master Out - Slave In (MOSI) )
( Master In - Slave Out (MISO) )
Host
Controller
Host
Controller
Typical SPI Interface Connections
Typical MCP41X1 SPI Interface Connec tions (Host Controller Hardware SPI)
SDI/SDO SDI
SDO
I/O
MCP41X1
I/O SCK
Host
Controller
Alternate MCP41X1 SPI Interface Connections (Host Controller Firmware SPI)
(SDO/SDI)
(SCK)
CS
I/O
(1)
CS
I/O
(1)
CS
I/O
(1)
Note 1: If High voltage commands are desired, some type of external circuitry needs to be
implemented.
2: R1 must be sized to ensure VIL and VIH of the devices are met.
MCP414X/416X/424X/426X
DS22059B-page 40 © 2008 Microchip Technology Inc.
6.1 SDI, SDO, SCK, and CS Operation
The operation of the four SPI interface pins are
discussed in this section. These pins are:
• SDI (Serial Data In)
• SDO (Serial Data Out)
• SCK (Serial Clock)
•CS
(Chip Select)
The serial interface works on either 8-bit or 16-bit
boundaries depending on the selected command. The
Chip Select (CS) pin frames the SPI commands.
6.1.1 SERIAL DATA IN (SDI)
The Serial Data In (SDI) signal is the data signal into
the device. The value on this pin is latched on the rising
edge of the SCK signal.
6.1.2 SERIAL DATA OUT (SDO)
The Serial Data Out (SDO) signal is the data signal out
of the device. The value on this pin is driven on the
falling edge of the SCK signal.
Once the CS pin is forced to the active level (VIL or
VIHH), the SDO pin will be driven. The state of the SDO
pin is determined by the serial bit’s position in the
command, the command selected, and if there is a
command error state (CMDERR).
6.1.3 SDI/SDO
For device packages that do not have enough pins for
both an SDI and SDO pin, the SDI and SDO
functionality is multiplexed onto a single I/O pin called
SDI/SDO.
The SDO will only be driven for the command error bit
(CMDERR) and during the data bits of a read command
(after the memory address and command has been
received).
6.1.3.1 SDI/SDO Operation
Figure 6-2 shows a block diagram of the SDI/SDO pin.
The SDI signal has an internal “smart” pull-up. The
value of this pull-up determines the frequency that data
can be read from the device. An external pull-up can be
added to the SDI/SDO pin to improve the rise time and
therefore improve the frequency that data can be read.
Data written on the SDI/SDO pin can be at the
maximum SPI frequency.
On the falling edge of the SCK pin during the C0 bit
(see Figure 7-1), the SDI/SDO pin will start outputting
the SDO value. The SDO signal overrides the control of
the smart pull-up, such that whenever the SDI/SDO pin
is outputting data, the smart pull-up is enabled.
The SDI/SDO pin will change from an input (SDI) to an
output (SDO) after the state machine has received the
Address and Command bits of the Command Byte. If
the command is a Read command, then the SDI/SDO
pin will remain an output for the remainder of the
command. For any other command, the SDI/SDO pin
returns to an input.
FIGURE 6-2: Serial I/O Mux Bloc k
Diagram.
Note: MCP41X1 Devices Only .
Note: To support the High voltage requirement of
the SDI function, the SDO function is an
open-drain output.
Note: Care must be take to ensure that a Drive
conflict does not exist between the Host
Controllers SDO pin (or software SDI/SDO
pin) and the MCP41x1 SDI/SDO pin (see
Figure 6-1).
SDI/SDO SDI
SDO
Control
“smart” pull-up
Open
Drain
Logic
© 2008 Microchip Technology Inc. DS22059B-page 41
MCP414X/416X/424X/426X
6.1.4 SERIAL CLOCK (SCK)
(SPI FREQUENCY OF OPERATION)
The SPI interface is specified to operate up to 10 MHz.
The actual clock rate depends on the configuration of
the system and the serial command used. Table 6-1
shows the SCK frequency for different configurations.
TABLE 6-1: SCK FREQUENCY
6.1.5 THE CS SIGNAL
The Chip Select (CS) signal is used to select the device
and frame a command sequence. To start a command,
or sequence of commands, the CS signal must
transition from the inactive state (VIH) to an active state
(VIL or VIHH).
After the CS signal has gone active, the SDO pin is
driven and the clock bit counter is reset.
If an error condition occurs for an SPI command, then
the Command byte’s Command Error (CMDERR) bit
(on the SDO pin) will be driven low (VIL). To exit the
error condition, the user must take the CS pin to the VIH
level.
When the CS pin returns to the inactive state (VIH) the
SPI module resets (including the address pointer).
While the CS pin is in the inactive state (VIH), the serial
interface is ignored. This allows the Host Controller to
interface to other SPI devices using the same SDI,
SDO, and SCK signals.
The CS pin has an internal pull-up resistor. The resistor
is disabled when the voltage on the CS pin is at the VIL
level. This means that when the CS pin is not driven,
the internal pull-up resistor will pull this signal to the VIH
level. When the CS pin is driven low (VIL), the
resistance becomes very large to reduce the device
current consumption.
The high voltage capability of the CS pin allows High
Voltage commands. High Voltage commands allow the
device’s WiperLock Technology and write protect
features to be enabled and disabled.
Memory Type Access
Command
Read Write,
Increment,
Decrement
Non-Volatile
Memory
SDI, SDO 10 MHz 10 MHz (2, 3)
SDI/SDO
(1)
250 kHz (4) 10 MHz (2, 3)
Volatile
Memory
SDI, SDO 10 MHz 10 MHz
SDI/SDO
(1)
250 kHz (4) 10 MHz
Note 1: MCP41X1 devices only
2: Non-Volatile memory does not support
the Increment or Decrement command.
3: After a Write command, the internal write
cycle must complete before the next SPI
command is received.
4: This is the maximum clock frequency
without an external pull-up resistor.
Note: There is a required delay after the CS pin
goes active to the 1st edge of the SCK pin.
MCP414X/416X/424X/426X
DS22059B-page 42 © 2008 Microchip Technology Inc.
6.2 The SPI Modes
The SPI module supports two (of the four) standard SPI
modes. These are Mode 0,0 and 1,1. The mode is
determined by the state of the SDI pin on the rising
edge of the 1st clock bit (of the 8-bit byte).
6.2.1 MODE 0,0
In Mode 0,0: SCK idle state = low (VIL), data is clocked
in on the SDI pin on the rising edge of SCK and clocked
out on the SDO pin on the falling edge of SCK.
6.2.2 MODE 1,1
In Mode 1,1: SCK idle state = high (VIH), data is
clocked in on the SDI pin on the rising edge of SCK and
clocked out on the SDO pin on the falling edge of SCK.
6.3 SPI Waveforms
Figure 6-3 through Figure 6-8 show the different SPI
command waveforms. Figure 6-3 and Figure 6-4 are
read and write commands. Figure 6-5 and Figure 6-6
are read commands when the SDI and SDO pins are
multiplexed on the same pin (SDI/SDO). Figure 6-7
and Figure 6-8 are increment and decrement
commands. The high voltage increment and decrement
commands are used to enable and disable WiperLock
Technology and Write Protect.
FIGURE 6-3: 16-Bit Commands (Write, Read) - SPI Waveform (Mode 1,1).
FIGURE 6-4: 16-Bit Commands (Write, Read) - SPI Waveform (Mode 0,0).
CS
SCK
Write to
SSPBUF
SDI
Input
Sample
SDO bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
AD3 AD2 AD1 AD0
C1 C0
XD8 D7 D6 D5 D4 D3 D2 D1 D0
VIH
VIL
CMDERR bit
VIHH
CS
SCK
Write to
SSPBUF
SDI
Input
Sample
SDO bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
AD3 AD2 AD1 AD0
C1 C0
XD8 D7 D6 D5 D4 D3 D2 D1 D0
VIH
VIL
CMDERR bit
VIHH
© 2008 Microchip Technology Inc. DS22059B-page 43
MCP414X/416X/424X/426X
FIGURE 6-5: 16-Bit Read Command for Devices with SDI/SDO multiplexed -
SPI Waveform (Mode 1,1).
FIGURE 6-6: 16-Bit Read Command for Devices with SDI/SDO multiplexed -
SPI Waveform (Mode 0,0).
CS
SCK
Write to
SSPBUF
SDI
Input
Sample
SDO bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12
AD3 AD2 AD1 AD0 C1 C0
D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
VIH
VIL
CMDERR bit
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven
(1) (1) (1) (1) (1) (1) (1) (1) (1) (1)
11
VIHH
CS
SCK
Write to
SSPBUF
SDI
Input
Sample
SDO bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
bit15 bit14 bit13 bit12
AD3 AD2 AD1 AD0 C1 C0
D8 D7 D6 D5 D4 D3 D2 D1 D0
X
VIH
VIL
CMDERR bit
Note 1: The SDI pin will read the state of the SDI pin which will be the SDO signal, unless overdriven
(1) (1) (1) (1) (1) (1) (1) (1) (1) (1)
11
VIHH
MCP414X/416X/424X/426X
DS22059B-page 44 © 2008 Microchip Technology Inc.
FIGURE 6-7: 8-Bit Commands (Increment, Decrement, Modify Write Protect or WiperLock
Technology) - SPI Waveform with PIC MCU (Mode 1,1).
FIGURE 6-8: 8-Bit Commands (Increment, Decrement, Modify Write Protect or WiperLock
Technology) - SPI Wa veform with PIC MCU (Mode 0,0).
bit7 bit0
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
CS
SCK
Write to
SSPBUF
SDI
Input
Sample
SDO
VIH
VIL
AD3 AD2 AD1 AD0 C0
C1 X X
“1” = “Valid” Command/Address
“0” = “Invalid” Command/Address
CMDERR bit
VIHH
SCK
Input
Sample
SDI
bit7 bit0
SDO bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
Write to
SSPBUF
CS
VIH
VIL
AD3 AD2 AD1 AD0 C0
C1 X X
“1” = “Valid” Command/Address
“0” = “Invalid” Command/Address
CMDERR bit
VIHH
© 2008 Microchip Technology Inc. DS22059B-page 45
MCP414X/416X/424X/426X
7.0 DEVICE COMMANDS
The MCP4XXX’s SPI command format supports 16
memory address locations and four commands. Each
command has two modes. These are:
• Normal Serial Commands
• High-Voltage Serial Commands
Normal serial commands are those where the CS pin is
driven to VIL. With High-Voltage Serial Commands, the
CS pin is driven to VIHH. In each mode, there are four
possible commands. These commands are shown in
Table 7-1.
The 8-bit commands (Increment Wiper and Decre-
ment Wiper commands) contain a Command Byte,
see Figure 7-1, while 16-bit commands (Read Data
and Wr it e D a ta commands) contain a Command Byte
and a Data Byte. The Command Byte contains two data
bits, see Figure 7-1.
Table 7-2 shows the supported commands for each
memory location and the corresponding values on the
SDI and SDO pins.
Table 7-3 shows an overview of all the SPI commands
and their interaction with other device features.
7.1 Command Byte
The Command Byte has three fields, the Address, the
Command, and 2 Data bits, see Figure 7-1. Currently
only one of the data bits is defined (D8). This is for the
Write command.
The device memory is accessed when the master
sends a proper Command Byte to select the desired
operation. The memory location getting accessed is
contained in the Command Byte’s AD3:AD0 bits. The
action desired is contained in the Command Byte’s
C1:C0 bits, see Ta b l e 7 - 1 . C1:C0 determines if the
desired memory location will be read, written,
Incremented (wiper setting +1) or Decremented (wiper
setting -1). The Increment and Decrement commands
are only valid on the volatile wiper registers, and in
High Voltage commands to enable/disable WiperLock
Technology and Software Write Protect.
As the Command Byte is being loaded into the device
(on the SDI pin), the device’s SDO pin is driving. The
SDO pin will output high bits for the first six bits of that
command. On the 7th bit, the SDO pin will output the
CMDERR bit state (see Section 7.3 “Error Condi-
tion”). The 8th bit state depends on the the command
selected.
TABLE 7-1: COMMAND BIT OVERVIEW
FIGURE 7-1: General SPI Command Formats.
C1:C0
Bit
States Command # of
Bits
Operates on
Volatile/
Non-Volatile
memory
11 Read Data 16-Bits Both
00 Write Data 16-Bits Both
01 Increment (1) 8-Bits Volatile Only
10 Decrement (1) 8-Bits Volatile Only
Note 1: High Voltage Increment and Decrement
commands on select non-volatile memory
locations enable/disable WiperLock
Technology and the software Write
Protect feature.
A
D
3
A
D
2
A
D
1
A
D
0
C
1
C
0
D
9
D
8
Memory
Command Byte
Data
Address Bits
Command
Bits
A
D
3
A
D
2
A
D
1
A
D
0
C
1
C
0
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
Memory
16-bit Command
Data
Address Bits
Command
Bits
0 0 = Write Data
0 1 = INCR
1 0 = DECR
1 1 = Read Data
C C
1 0
Command
Bits
8-bit Command
Command Byte Data Byte
MCP414X/416X/424X/426X
DS22059B-page 46 © 2008 Microchip Technology Inc.
TABLE 7-2: MEMORY MAP AND THE SUPPORTED COMMANDS
Address Command Data
(10-bits) (1)
SPI String (Binary)
Value Function MOSI (SDI pin) MISO (SDO pin) (2)
00h Volatile Wiper 0 Write Data nn nnnn nnnn 0000 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0000 11nn nnnn nnnn 1111 111n nnnn nnnn
Increment Wiper — 0000 0100 1111 1111
Decrement Wiper — 0000 1000 1111 1111
01h Volatile Wiper 1 Write Data nn nnnn nnnn 0001 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0001 11nn nnnn nnnn 1111 111n nnnn nnnn
Increment Wiper — 0001 0100 1111 1111
Decrement Wiper — 0001 1000 1111 1111
02h NV Wiper 0 Write Data nn nnnn nnnn 0010 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0010 11nn nnnn nnnn 1111 111n nnnn nnnn
HV Inc. (WL0 DIS) (3) — 0010 0100 1111 1111
HV Dec. (WL0 EN) (4) — 0010 1000 1111 1111
03h NV Wiper 1 Write Data nn nnnn nnnn 0011 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0011 11nn nnnn nnnn 1111 111n nnnn nnnn
HV Inc. (WL1 DIS) (3) — 0011 0100 1111 1111
HV Dec. (WL1 EN) (4) — 0011 1000 1111 1111
04h (5) Volatile
TCON Register
Write Data nn nnnn nnnn 0100 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0100 11nn nnnn nnnn 1111 111n nnnn nnnn
05h (5) Status Register Read Data nn nnnn nnnn 0101 11nn nnnn nnnn 1111 111n nnnn nnnn
06h (5) Data EEPROM Write Data nn nnnn nnnn 0110 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0110 11nn nnnn nnnn 1111 111n nnnn nnnn
07h (5) Data EEPROM Write Data nn nnnn nnnn 0111 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 0111 11nn nnnn nnnn 1111 111n nnnn nnnn
08h (5) Data EEPROM Write Data nn nnnn nnnn 1000 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1000 11nn nnnn nnnn 1111 111n nnnn nnnn
09h (5) Data EEPROM Write Data nn nnnn nnnn 1001 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1001 11nn nnnn nnnn 1111 111n nnnn nnnn
0Ah (5) Data EEPROM Write Data nn nnnn nnnn 1010 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1010 11nn nnnn nnnn 1111 111n nnnn nnnn
0Bh (5) Data EEPROM Write Data nn nnnn nnnn 1011 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1011 11nn nnnn nnnn 1111 111n nnnn nnnn
0Ch (5) Data EEPROM Write Data nn nnnn nnnn 1100 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1100 11nn nnnn nnnn 1111 111n nnnn nnnn
0Dh (5) Data EEPROM Write Data nn nnnn nnnn 1101 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1101 11nn nnnn nnnn 1111 111n nnnn nnnn
0Eh (5) Data EEPROM Write Data nn nnnn nnnn 1110 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1110 11nn nnnn nnnn 1111 111n nnnn nnnn
0Fh Data EEPROM Write Data nn nnnn nnnn 1111 00nn nnnn nnnn 1111 1111 1111 1111
Read Data nn nnnn nnnn 1111 11nn nnnn nnnn 1111 111n nnnn nnnn
HV Inc. (WP DIS) (3) — 1111 0100 1111 1111
HV Dec. (WP EN) (4) — 1111 1000 1111 1111
Note 1: The Data Memory is only 9-bits wide, so the MSb is ignored by the device.
2: All these Address/Command combinations are valid, so the CMDERR bit is set. Any other Address/Command combi-
nation is a command error state and the CMDERR bit will be clear.
3: Disables WiperLock Technology for wiper 0 or wiper 1, or disables Write Protect.
4: Enables WiperLock Technology for wiper 0 or wiper 1, or enables Write Protect.
5: Reserved addresses: Increment or Decrement commands are invalid for these addresses.
© 2008 Microchip Technology Inc. DS22059B-page 47
MCP414X/416X/424X/426X
7.2 Data Byte
Only the Read Command and the Write Command use
the Data Byte, see Figure 7-1. These commands
concatenate the 8-bits of the Data Byte with the one
data bit (D8) contained in the Command Byte to form
9-bits of data (D8:D0). The Command Byte format
supports up to 9-bits of data so that the 8-bit resistor
network can be set to Full Scale (100h or greater). This
allows wiper connections to Terminal A and to
Terminal B.
The D9 bit is currently unused, and corresponds to the
position on the SDO data of the CMDERR bit.
7.3 Error Condition
The CMDERR bit indicates if the four address bits
received (AD3:AD0) and the two command bits
received (C1:C0) are a valid combination (see
Table 4-1). The CMDERR bit is high if the combination
is valid and low if the combination is invalid.
The command error bit will also be low if a write to a
Non-Volatile Address has been specified and another
SPI command occurs before the CS pin is driven
inactive (VIH).
SPI commands that do not have a multiple of 8 clocks
are ignored.
Once an error condition has occurred, any following
commands are ignored. All following SDO bits will be
low until the CMDERR condition is cleared by forcing
the CS pin to the inactive state (VIH).
7.3.1 ABORTING A TRANSMISSION
All SPI transmissions must have the correct number of
SCK pulses to be executed. The command is not
executed until the complete number of clocks have
been received. Some commands also require the CS
pin to be forced inactive (VIH). If the CS pin is forced to
the inactive state (VIH) the serial interface is reset.
Partial commands are not executed.
SPI is more susceptible to noise than other bus
protocols. The most likely case is that this noise
corrupts the value of the data being clocked into the
MCP4XXX or the SCK pin is injected with extra clock
pulses. This may cause data to be corrupted in the
device, or a command error to occur, since the address
and command bits were not a valid combination. The
extra SCK pulse will also cause the SPI data (SDI) and
clock (SCK) to be out of sync. Forcing the CS pin to the
inactive state (VIH) resets the serial interface. The SPI
interface will ignore activity on the SDI and SCK pins
until the CS pin transition to the active state is detected
(VIH to VIL or VIH to VIHH).
Note 1: When data is not being received by the
MCP4XXX, It is recommended that the
CS pin be forced to the inactive level (VIL)
2: It is also recommended that long continu-
ous command strings should be broken
down into single commands or shorter
continuous command strings. This
reduces the probability of noise on the
SCK pin corrupting the desired SPI
commands.
MCP414X/416X/424X/426X
DS22059B-page 48 © 2008 Microchip Technology Inc.
7.4 Continuous Commands
The device supports the ability to execute commands
continuously. While the CS pin is in the active state (VIL
or VIHH). Any sequence of valid commands may be
received.
The following example is a valid sequence of events:
1. CS pin driven active (VIL or VIHH).
2. Read Command.
3. Increment Command (Wiper 0).
4. Increment Command (Wiper 0).
5. Decrement Command (Wiper 1).
6. Write Command (Volatile memory).
7. Write Command (Non-Volatile memory).
8. CS pin driven inactive (VIH).
TABLE 7-3: COMMANDS
Note 1: It is recommended that while the CS pin is
active, only one type of command should
be issued. When changing commands, it
is recommended to take the CS pin
inactive then force it back to the active
state.
2: It is also recommended that long
command strings should be broken down
into shorter command strings. This
reduces the probability of noise on the
SCK pin corrupting the desired SPI
command string.
Command Name # of
Bits
Writes
Value in
EEPROM
Operates on
Volatile/
Non-Volatile
memory
High
Voltage
(VIHH) on
CS pin?
Impact on
WiperLock or
Write Protect
Works
when
Wiper is
“locked”?
Write Data 16-Bits Yes (1) Both — unlocked
(1) No
Read Data 16-Bits — Both — unlocked (1) No
Increment Wiper 8-Bits — Volatile Only — unlocked
(1) No
Decrement Wiper 8-Bits — Volatile Only — unlocked
(1) No
High Voltage Write Data 16-Bits Yes Both Yes unchanged No
High Voltage Read Data 16-Bits — Both Yes unchanged Yes
High Voltage Increment Wiper 8-Bits — Volatile Only Yes unchanged No
High Voltage Decrement Wiper 8-Bits — Volatile Only Yes unchanged No
Modify Write Protect or Wiper-
Lock T echnology (High Volt age) -
Enable
8-Bits — (2) Non-Volatile
Only (2)
Yes locked/
protected (2)
Yes
Modify Write Protect or Wiper-
Lock T echnology (High Volt age) -
Disable
8-Bits — (3) Non-Volatile
Only (3)
Yes unlocked/
unprotected (3)
Yes
Note 1: This command will only complete if wiper is “unlocked” (WiperLock Technology is Disabled).
2: If the command is executed using address 02h or 03h, then that corresponding wiper is locked or
if with address 0Fh, then Write Protect is enabled.
3: If the command is executed using with address 02h or 03h, then that corresponding wiper is unlocked or
if with address 0Fh, then Write Protect is disabled.
© 2008 Microchip Technology Inc. DS22059B-page 49
MCP414X/416X/424X/426X
7.5 Write Data
Normal and High Voltage
The Write command is a 16-bit command. The Write
Command can be issued to both the Volatile and
Non-Volatile memory locations. The format of the
command is shown in Figure 7-2.
A Write command to a Volatile memory location
changes that location after a properly formatted Write
Command (16-clock) have been received.
A Write command to a Non-Volatile memory location
will only start a write cycle after a properly formatted
Write Command (16-clock) have been received and the
CS pin transitions to the inactive state (VIH).
7.5.1 SINGLE WRITE TO VOLATILE
MEMORY
The write operation requires that the CS pin be in the
active state (VILor VIHH). Typically, the CS pin will be in
the inactive state (VIH) and is driven to the active state
(VIL). The 16-bit Write Command (Command Byte and
Data Byte) is then clocked in on the SCK and SDI pins.
Once all 16 bits have been received, the specified
volatile address is updated. A write will not occur if the
write command isn’t exactly 16 clocks pulses. This
protects against system issues from corrupting the
Non-Volatile memory locations.
Figure 6-3 and Figure 6-4 show possible waveforms
for a single write.
7.5.2 SINGLE WRITE TO NON-VOLATILE
MEMORY
The sequence to write to to a single non-volatile
memory location is the same as a single write to volatile
memory with the exception that after the CS pin is
driven inactive (VIH), the EEPROM write cycle (tWC) is
started. A write cycle will not start if the write command
isn’t exactly 16 clocks pulses. This protects against
system issues from corrupting the Non-Volatile
memory locations.
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
Once a write command to a Non-Volatile memory
location has been received, NO other SPI commands
should be received before the CS pin transitions to the
inactive state (VIH) or the current SPI command will
have a Command Error (CMDERR) occur.
FIGURE 7-2: Write Command - SDI and SDO States.
Note: Writes to certain memory locations will be
dependant on the state of the WiperLock
Technology bits and the Write Protect bit.
A
D
3
A
D
2
A
D
1
A
D
0
00D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1111111111111111Valid Address/Command combination
1111110000000000 Invalid Address/Command combination (1)
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
MCP414X/416X/424X/426X
DS22059B-page 50 © 2008 Microchip Technology Inc.
7.5.3 CONTINUOUS WRITES TO
VOLATILE MEMORY
Continuous writes are possible only when writing to the
volatile memory registers (address 00h, 01h, and 04h).
Figure 7-3 shows the sequence for three continuous
writes. The writes do not need to be to the same volatile
memory address.
7.5.4 CONTINUOUS WRITES TO
NON-VOLATILE MEMORY
Continuous writes to non-volatile memory are not
allowed, and attempts to do so will result in a command
error (CMDERR) condition.
FIGURE 7-3: Continuous Write Sequence (Volatile Memory only).
A
D
3
A
D
2
A
D
1
A
D
0
00D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1111111*111111111
A
D
3
A
D
2
A
D
1
A
D
0
00D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1111111*111111111
A
D
3
A
D
2
A
D
1
A
D
0
00D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1111111*111111111
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS pin is driven inactive (VIH).
© 2008 Microchip Technology Inc. DS22059B-page 51
MCP414X/416X/424X/426X
7.6 Read Data
Normal and High Voltage
The Read command is a 16-bit command. The Read
Command can be issued to both the Volatile and
Non-Volatile memory locations. The format of the
command is shown in Figure 7-4.
The first 6-bits of the Read command determine the
address and the command. The 7th clock will output
the CMDERR bit on the SDO pin. The remaining
9-clocks the device will transmit the 9 data bits (D8:D0)
of the specified address (AD3:AD0).
Figure 7-4 shows the SDI and SDO information for a
Read command.
During a write cycle (Write or High Voltage Write to a
Non-Volatile memory location) the Read command can
only read the Volatile memory locations. By reading the
Status Register (04h), the Host Controller can
determine when the write cycle has completed (via the
state of the EEWA bit).
7.6.1 SINGLE READ
The read operation requires that the CS pin be in the
active state (VILor VIHH). Typically, the CS pin will be in
the inactive state (VIH) and is driven to the active state
(VILor VIHH). The 16-bit Read Command (Command
Byte and Data Byte) is then clocked in on the SCK and
SDI pins. The SDO pin starts driving data on the 7th bit
(CMDERR bit) and the addressed data comes out on
the 8th through 16th clocks. Figure 6-3 through
Figure 6-6 show possible waveforms for a single read.
Figure 6-5 and Figure 6-6 show the single read
waveforms when the SDI and SDO signals are
multiplexed on the same pin. For additional information
on the multiplexing of these signals, refer to
Section 6.1.3 “SDI/SDO”.
FIGURE 7-4: Read Command - SDI and SDO States.
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
Valid Address/Command combination
1111110000000000Attempted Non-Volatile Memory Read
during Non-Volatile Memory Write Cycle
COMMAND BYTE DATA BYTE
SDI
SDO
READ DATA
MCP414X/416X/424X/426X
DS22059B-page 52 © 2008 Microchip Technology Inc.
7.6.2 CONTINUOUS READS
Continuous reads allows the devices memory to be
read quickly. Continuous reads are possible to all
memory locations. If a non-volatile memory write cycle
is occurring, then Read commands may only access
the volatile memory locations.
Figure 7-5 shows the sequence for three continuous
reads. The reads do not need to be to the same
memory address.
FIGURE 7-5: Continuous Read Sequence.
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
A
D
3
A
D
2
A
D
1
A
D
0
11XXXXXXXXXX
1111111*D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
COMMAND BYTE DATA BYTE
SDI
SDO
Note 1: If a Command Error (CMDERR) occurs at this bit location (*), then all following SDO bits will be
driven low until the CS pin is driven inactive (VIH).
© 2008 Microchip Technology Inc. DS22059B-page 53
MCP414X/416X/424X/426X
7.7 Increment Wiper
Normal and High Voltage
The Increment Command is an 8-bit command. The
Increment Command can only be issued to volatile
memory locations. The format of the command is
shown in Figure 7-6.
An Increment Command to the volatile memory
location changes that location after a properly
formatted command (8-clocks) have been received.
Increment commands provide a quick and easy
method to modify the value of the volatile wiper location
by +1 with minimal overhead.
FIGURE 7-6: Increment Command -
SDI and SDO States.
7.7.1 SINGLE INCREMENT
Typically, the CS pin starts at the inactive state (VIH),
but may be already be in the active state due to the
completion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single increment. The increment
operation requires that the CS pin be in the active state
(VILor VIHH). Typically, the CS pin will be in the inactive
state (VIH) and is driven to the active state (VILor VIHH).
The 8-bit Increment Command (Command Byte) is
then clocked in on the SDI pin by the SCK pins. The
SDO pin drives the CMDERR bit on the 7th clock.
The wiper value will increment up to 100h on 8-bit
devices and 80h on 7-bit devices. After the wiper value
has reached Full Scale (8-bit =100h, 7-bit =80h), the
wiper value will not be incremented further. If the Wiper
register has a value between 101h and 1FFh, the
Increment command is disabled. See Table 7-4 for
additional information on the Increment Command
versus the current volatile wiper value.
The Increment operations only require the Increment
command byte while the CS pin is active (VILor VIHH)
for a single increment.
After the wiper is incremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions on the SCK pin do not cause
the wiper setting to change. Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired increment occurs.
TABLE 7-4: INCREMENT OPERATION VS.
VOLATILE WIPER VALUE
Note: Table 7-2 shows the valid addresses for
the Increment Wiper command. Other
addresses are invalid.
A
D
3
A
D
2
A
D
1
A
D
0
01XX
1111111*1Note 1, 2
1111110 0 Note 1, 3
(INCR COMMAND (n+1) )
SDI
SDO
COMMAND BYTE
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the
CMDERR condition is cleared.
(the CS pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following
SDO bits will be driven low until the CS
pin is driven inactive (VIH).
Current Wiper
Setting Wiper (W)
Properties
Increment
Command
Operates?
7-bit
Pot 8-bit
Pot
3FFh
081h
3FFh
101h
Reserved
(Full-Scale (W = A))
No
080h 100h Full-Scale (W = A) No
07Fh
041h
0FFh
081
W = N
040h 080h W = N (Mid-Scale) Yes
03Fh
001h
07Fh
001
W = N
000h 000h Zero Scale (W = B) Yes
MCP414X/416X/424X/426X
DS22059B-page 54 © 2008 Microchip Technology Inc.
7.7.2 CONTINUOUS INCREMENTS
Continuous Increments are possible only when writing
to the volatile memory registers (address 00h, and
01h).
Figure 7-7 shows a Continuous Increment sequence
for three continuous writes. The writes do not need to
be to the same volatile memory address.
When executing an continuous Increment commands,
the selected wiper will be altered from n to n+1 for each
Increment command received. The wiper value will
increment up to 100h on 8-bit devices and 80h on 7-bit
devices. After the wiper value has reached Full-Scale
(8-bit =100h, 7-bit =80h), the wiper value will not be
incremented further. If the Wiper register has a value
between 101h and 1FFh, the Increment command is
disabled.
Increment commands can be sent repeatedly without
raising CS until a desired condition is met. The value in
the Volatile Wiper register can be read using a Read
Command and written to the corresponding
Non-Volatile Wiper EEPROM using a Write Command.
When executing a continuous command string, The
Increment command can be followed by any other valid
command.
The wiper terminal will move after the command has
been received (8th clock).
After the wiper is incremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions (on the SCK pin do not cause
the wiper setting to change). Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired increment occurs.
FIGURE 7-7: Continuous Increment Command - SDI and SDO States.
A
D
3
A
D
2
A
D
1
A
D
0
01XXA
D
3
A
D
2
A
D
1
A
D
0
01XXA
D
3
A
D
2
A
D
1
A
D
0
01XX
1111111*11111111*11111111*1Note 1, 2
111111000000000000000000Note 3, 4
111111111111110000000000Note 3, 4
11111111111111111111110 0 Note 3, 4
(INCR COMMAND (n+1) ) (INCR COMMAND (n+2) ) (INCR COMMAND (n+3) )
SDI
SDO
COMMAND BYTE COMMAND BYTE COMMAND BYTE
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
© 2008 Microchip Technology Inc. DS22059B-page 55
MCP414X/416X/424X/426X
7.8 Decrement Wiper
Normal and High Voltage
The Decrement Command is an 8-bit command. The
Decrement Command can only be issued to volatile
memory locations. The format of the command is
shown in Figure 7-6.
An Decrement Command to the volatile memory
location changes that location after a properly
formatted command (8-clocks) have been received.
Decrement commands provide a quick and easy
method to modify the value of the volatile wiper location
by -1 with minimal overhead.
FIGURE 7-8: Decrement Command -
SDI and SDO States.
7.8.1 SINGLE DECREMENT
Typically the CS pin starts at the inactive state (VIH), but
may be already be in the active state due to the
completion of another command.
Figure 6-7 through Figure 6-8 show possible
waveforms for a single Decrement. The decrement
operation requires that the CS pin be in the active state
(VILor VIHH). Typically the CS pin will be in the inactive
state (VIH) and is driven to the active state (VILor VIHH).
Then the 8-bit Decrement Command (Command Byte)
is clocked in on the SDI pin by the SCK pins. The SDO
pin drives the CMDERR bit on the 7th clock.
The wiper value will decrement from the wipers Full
Scale value (100h on 8-bit devices and 80h on 7-bit
devices). Above the wipers Full Scale value
(8-bit =101h to 1FFh, 7-bit = 81h to FFh), the
decrement command is disabled. If the Wiper register
has a Zero Scale value (000h), then the wiper value will
not decrement. See Ta b l e 7 - 4 for additional information
on the Decrement Command vs. the current volatile
wiper value.
The Decrement commands only require the Decrement
command byte, while the CS pin is active (VILor VIHH)
for a single decrement.
After the wiper is decremented to the desired position,
the CS pin should be forced to VIH to ensure that
unexpected transitions on the SCK pin do not cause
the wiper setting to change. Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired decrement occurs.
TABLE 7-5: DECREMENT OPERATION VS.
VOLATILE WIPER VALUE
Note: Table 7-2 shows the valid addresses for
the Decrement Wiper command. Other
addresses are invalid.
A
D
3
A
D
2
A
D
1
A
D
0
10XX
1111111*1Note 1, 2
1111110 0 Note 1, 3
(DECR COMMAND (n+1))
SDI
SDO
COMMAND BYTE
Note 1: Only functions when writing the volatile
wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination
all following SDO bits will be low until the
CMDERR condition is cleared.
(the CS pin is forced to the inactive
state).
4: If a Command Error (CMDERR) occurs
at this bit location (*), then all following
SDO bits will be driven low until the CS
pin is driven inactive (VIH).
Current Wiper
Setting Wiper (W)
Properties
Decrement
Command
Operates?
7-bit
Pot 8-bit
Pot
3FFh
081h
3FFh
101h
Reserved
(Full-Scale (W = A))
No
080h 100h Full-Scale (W = A) Yes
07Fh
041h
0FFh
081
W = N
040h 080h W = N (Mid-Scale) Yes
03Fh
001h
07Fh
001
W = N
000h 000h Zero Scale (W = B) No
MCP414X/416X/424X/426X
DS22059B-page 56 © 2008 Microchip Technology Inc.
7.8.2 CONTINUOUS DECREMENTS
Continuous Decrements are possible only when writing
to the volatile memory registers (address 00h, 01h, and
04h).
Figure 7-9 shows a continuous Decrement sequence
for three continuous writes. The writes do not need to
be to the same volatile memory address.
When executing an continuous Decrement commands,
the selected wiper will be altered from n to n-1 for each
Decrement command received. The wiper value will
decrement from the wipers Full Scale value (100h on
8-bit devices and 80h on 7-bit devices). Above the
wipers Full-Scale value (8-bit =101h to 1FFh,
7-bit = 81h to FFh), the decrement command is
disabled. If the Wiper register has a Zero Scale value
(000h), then the wiper value will not decrement. See
Table 7-4 for additional information on the Decrement
Command vs. the current volatile wiper value.
Decrement commands can be sent repeatedly without
raising CS until a desired condition is met. The value in
the Volatile Wiper register can be read using a Read
Command and written to the corresponding
Non-Volatile Wiper EEPROM using a Write Command.
When executing a continuous command string, The
Decrement command can be followed by any other
valid command.
The wiper terminal will move after the command has
been received (8th clock).
After the wiper is decremented to the desired position,
the CS pin should be forced to VIH to ensure that
“unexpected” transitions (on the SCK pin do not cause
the wiper setting to change). Driving the CS pin to VIH
should occur as soon as possible (within device
specifications) after the last desired decrement occurs.
FIGURE 7-9: Continuous Decrement Command - SDI and SDO States.
A
D
3
A
D
2
A
D
1
A
D
0
10XXA
D
3
A
D
2
A
D
1
A
D
0
10XXA
D
3
A
D
2
A
D
1
A
D
0
10XX
1111111*11111111*11111111*1Note 1, 2
111111000000000000000000Note 3, 4
111111111111110000000000Note 3, 4
11111111111111111111110 0 Note 3, 4
(DECR COMMAND (n-1) ) (DECR COMMAND (n-1) ) (DECR COMMAND (n-1) )
SDI
SDO
COMMAND BYTE COMMAND BYTE COMMAND BYTE
Note 1: Only functions when writing the volatile wiper registers (AD3:AD0) 0h and 1h.
2: Valid Address/Command combination.
3: Invalid Address/Command combination.
4: If an Error Condition occurs (CMDERR = L), all following SDO bits will be low until the CMDERR
condition is cleared (the CS pin is forced to the inactive state).
© 2008 Microchip Technology Inc. DS22059B-page 57
MCP414X/416X/424X/426X
7.9 Modify Write Protect or WiperLock
Technology (High Voltage)
Enable and Disable
This command is a special case of the High Voltage
Decrement Wiper and High Voltage Increment Wiper
commands to the non-volatile memory locations 02h,
03h, and 0Fh. This command is used to enable or
disable either the software Write Protect, wiper 0
WiperLock Technology, or wiper 1 WiperLock Technol-
ogy. Tab l e 7- 6 shows the memory addresses, the High
Voltage command and the result of those commands
on the non-volatile WP, WL0, 0r WL1 bits. The format
of the command is shown in Figure 7-8 (Enable) or
Figure 7-6 (Disable).
7.9.1 SINGLE ENABLE WRITE PROTECT
OR WIPERLOCK TECHNOLOGY
(HIGH VOLTAGE)
Figure 6-7 through Figure 6-8 show possible
waveforms for a single Modify Write Protect or
WiperLock Technology command.
A Modify Write Protect or WiperLock Technology
Command will only start an EEPROM write cycle (twc)
after a properly formatted Command (8-clocks) has
been received and the CS pin transitions to the inactive
state (VIH).
After the CS pin is driven inactive (VIH), the serial
interface may immediately be re-enabled by driving the
CS pin to the active state (VILor VIHH).
During an EEPROM write cycle, only serial commands
to Volatile memory (addresses 00h, 01h, 04h, and 05h)
are accepted. All other serial commands are ignored
until the EEPROM write cycle (twc) completes. This
allows the Host Controller to operate on the Volatile
Wiper registers and the TCON register, and to Read
the Status Register. The EEWA bit in the Status register
indicates the status of an EEPROM Write Cycle.
TABLE 7-6: ADDRESS MAP TO MODIFY WRITE PROTECT AND WIPERLOCK TECHNOLOGY
Memory
Address Command’s and Result
High Voltage Decrement Wiper High Voltage Increment Wiper
00h Wiper 0 register is decremented Wiper 0 register is incremented
01h Wiper 1 register is decremented Wiper 1 register is incremented
02h WL0 is enabled WL0 is disabled
03h WL1 is enabled WL1 is disabled
04h (1) TCON register not changed, CMDERR bit is set TCON register not changed, CMDERR bit is set
05h - 0Eh (1) Reserved Reserved
0Fh WP is enabled WP is disabled
Note 1: Reserved addre sses: Increment or Decrement commands are invalid for these addresses.
MCP414X/416X/424X/426X
DS22059B-page 58 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 59
MCP414X/416X/424X/426X
8.0 APPLICATIONS EXAMPLES
Non-volatile digital potentiometers have a multitude of
practical uses in modern electronic circuits. The most
popular uses include precision calibration of set point
thresholds, sensor trimming, LCD bias trimming, audio
attenuation, adjustable power supplies, motor control
overcurrent trip setting, adjustable gain amplifiers and
offset trimming. The MCP414X/416X/424X/426X
devices can be used to replace the common mechani-
cal trim pot in applications where the operating and
terminal voltages are within CMOS process limitations
(VDD = 2.7V to 5.5V).
8.1 Split Rail Applications
All inputs that would be used to interface to a Host
Controller support High Voltage on their input pin. This
allows the MCP4XXX device to be used in split power
rail applications.
An example of this is a battery application where the
PIC® MCU is directly powered by the battery supply
(4.8V) and the MCP4XXX device is powered by the
3.3V regulated voltage.
For SPI applications, these inputs are:
•CS
•SCK
• SDI (or SDI/SDO)
•WP
•SHDN
Figure 8-1 through Figure 8-2 show three example split
rail systems. In this system, the MCP4XXX interface
input signals need to be able to support the PIC MCU
output high voltage (VOH).
In Example #1 (Figure 8-1), the MCP4XXX interface
input signals need to be able to support the PIC MCU
output high voltage (VOH). If the split rail voltage delta
becomes too large, then the customer may be required
to do some level shifting due to MCP4XXX VOH levels
related to Host Controller VIH levels.
In Example #2 (Figure 8-2), the MCP4XXX interface
input signals need to be able to support the lower
voltage of the PIC MCU output high voltage level (VOH).
Table 8-1 shows an example PIC microcontroller I/O
voltage specifications and the MCP4XXX specifica-
tions. So this PIC MCU operating at 3.3V will drive a
VOH at 2.64V, and for the MCP4XXX operating at 5.5V,
the VIH is 2.47V. Therefore, the interface signals meet
specifications.
FIGURE 8-1: Example Split Rail
System 1.
FIGURE 8-2: Example Split Rail
System 2.
TABLE 8-1: VOH - VIH COMPARISONS
PIC (1) MCP4XXX
(2) Comment
VDD VIH VOH VDD VIH VOH
5.5 4.4 4.4 2.7 1.215 — (3)
5.0 4.0 4.0 3.0 1.35 — (3)
4.5 3.6 3.6 3.3 1.485 — (3)
3.3 2.64 2.64 4.5 2.025 — (3)
3.0 2.4 2.4 5.0 2.25 — (3)
2.7 2.16 2.16 5.5 2.475 — (3)
Note 1: VOH minimum = 0.8 * VDD;
VOL maximum = 0.6V
VIH minimum = 0.8 * VDD;
VIL maximum = 0.2 * VDD;
2: VOH minimum (SDA only) =;
VOL maximum = 0.2 * VDD
VIH minimum = 0.45 * VDD;
VIL maximum = 0.2 * VDD
3: The only MCP4XXX output pin is SDO,
which is Open-Drain (or Open-Drain with
Internal Pull-up) with High Voltage Support
Voltage
Regulator
5V 3V
PIC MCU MCP4XXX
SDI
CS
SCK
WP
SHDN
SDI
CS
SCK
WP
SHDN
SDO
SDO
Voltage
Regulator
3V
5V
PIC MCU MCP4XXX
SDI
CS
SCK
WP
SHDN
SDI
CS
SCK
WP
SHDN
SDO
SDO
MCP414X/416X/424X/426X
DS22059B-page 60 © 2008 Microchip Technology Inc.
8.2 Techniques to force the CS pin to
VIHH
The circuit in Figure 8-3 shows a method using the
TC1240A doubling charge pump. When the SHDN pin
is high, the TC1240A is off, and the level on the CS pin
is controlled by the PIC® microcontrollers (MCUs) IO2
pin.
When the SHDN pin is low, the TC1240A is on and the
VOUT voltage is 2 * VDD. The resistor R1 allows the CS
pin to go higher than the voltage such that the PIC
MCU’s IO2 pin “clamps” at approximately VDD.
FIGURE 8-3: Using the TC1240A to
generate the VIHH voltage.
The circuit in Figure 8-4 shows the method used on the
MCP402X Non-volatile Digital Potentiometer Evalua-
tion Board (Part Number: MCP402XEV). This method
requires that the system voltage be approximately 5V.
This ensures that when the PIC10F206 enters a
brown-out condition, there is an insufficient voltage
level on the CS pin to change the stored value of the
wiper. The MCP402X Non-volatile Digital Potentiome-
ter Evaluation Board User’s Guide (DS51546) contains
a complete schematic.
GP0 is a general purpose I/O pin, while GP2 can either
be a general purpose I/O pin or it can output the internal
clock.
For the serial commands, configure the GP2 pin as an
input (high impedance). The output state of the GP0 pin
will determine the voltage on the CS pin (VIL or VIH).
For high-voltage serial commands, force the GP0
output pin to output a high level (VOH) and configure the
GP2 pin to output the internal clock. This will form a
charge pump and increase the voltage on the CS pin
(when the system voltage is approximately 5V).
FIGURE 8-4: MCP4XXX Non-volatile
Digital Potentiometer Evaluation Board
(MCP402XEV) implementation to generate the
VIHH voltage.
8.3 Using Shutdown Modes
Figure 8-5 shows a possible application circuit where
the independent terminals could be used.
Disconnecting the wiper allows the transistor input to
be taken to the Bias voltage level (disconnecting A and
or B may be desired to reduce system current).
Disconnecting Terminal A modifies the transistor input
by the RBW rheostat value to the Common B.
Disconnecting Terminal B modifies the transistor input
by the RAW rheostat value to the Common A. The
Common A and Common B connections could be
connected to VDD and VSS.
FIGURE 8-5: Example Application Circuit
using Terminal Disconnects.
CS
PIC MCU
MCP402X
R1
IO1
IO2
C2
TC1240A
VIN
SHDN
C+
C-
VOUT
C1
CS
PIC10F206
MCP4XXX
R1
GP0
GP2
C2
C1
Balance Bias
W
B
Input
Input
To ba se
of Transistor
(or Amplifier)
A
Common B
Common A
© 2008 Microchip Technology Inc. DS22059B-page 61
MCP414X/416X/424X/426X
8.4 Design Considerations
In the design of a system with the MCP4XXX devices,
the following considerations should be taken into
account:
•Power Supply Considerations
•Layout Considerations
8.4.1 POWER SUPPLY
CONSIDERATIONS
The typical application will require a bypass capacitor
in order to filter high-frequency noise, which can be
induced onto the power supply's traces. The bypass
capacitor helps to minimize the effect of these noise
sources on signal integrity. Figure 8-6 illustrates an
appropriate bypass strategy.
In this example, the recommended bypass capacitor
value is 0.1 µF. This capacitor should be placed as
close (within 4 mm) to the device power pin (VDD) as
possible.
The power source supplying these devices should be
as clean as possible. If the application circuit has
separate digital and analog power supplies, VDD and
VSS should reside on the analog plane.
FIGURE 8-6: Typical Microcontroller
Connections.
8.4.2 LAYOUT CONSIDERATIONS
Inductively-coupled AC transients and digital switching
noise can degrade the input and output signal integrity,
potentially masking the MCP4XXX’s performance.
Careful board layout minimizes these effects and
increases the Signal-to-Noise Ratio (SNR). Multi-layer
boards utilizing a low-inductance ground plane,
isolated inputs, isolated outputs and proper decoupling
are critical to achieving the performance that the silicon
is capable of providing. Particularly harsh environ-
ments may require shielding of critical signals.
If low noise is desired, breadboards and wire-wrapped
boards are not recommended.
8.4.3 RESISTOR TEMPCO
Characterization curves of the resistor temperature
coefficient (Tempco) are shown in Figure 2-8,
Figure 2-19, Figure 2-29, and Figure 2-39.
These curves show that the resistor network is
designed to correct for the change in resistance as
temperature increases. This technique reduces the
end to end change is RAB resistance.
8.4.4 HIGH VOLTAGE TOLERANT PINS
High Voltage support (VIHH) on the Serial Interface pins
supports two features. These are:
• In-Circuit Accommodation of split rail applications
and power supply sync issues
• User configuration of the Non-Volatile EEPROM,
Write Protect, and WiperLock feature
VDD
VDD
VSS VSS
MCP414X/416X/
424X/426X
0.1 µF
PIC® Microcontroller
0.1 µF
U/D
CS
W
B
A
Note: In many applications, the High Voltage will
only be present at the manufacturing
stage so as to “lock” the Non-Volatile wiper
value (after calibration) and the contents
of the EEPROM. This ensures that the
since High Voltage is not present under
normal operating conditions, that these
values can not be modified.
MCP414X/416X/424X/426X
DS22059B-page 62 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 63
MCP414X/416X/424X/426X
9.0 DEVELOPMENT SUPPORT
9.1 Development Tools
Several development tools are available to assist in
your design and evaluation of the MCP4XXX devices.
The currently available tools are shown in Ta ble 9 - 1.
These boards may be purchased directly from the
Microchip web site at www.microchip.com.
9.2 Technical Documentation
Several additional technical documents are available to
assist you in your design and development. These
technical documents include Application Notes,
Technical Briefs, and Design Guides. Tab l e 9-2 shows
some of these documents.
TABLE 9-1: DEVELOPMENT TOOLS
TABLE 9-2: TECHNICAL DOCUMENTATION
Board Name Part # Supported Devices
MCP42XX Digital Potentiometer PICtail Plus Demo
Board
MCP42XXDM-PTPLS MCP42XX
MCP4XXX Digital Potentiometer Daughter Board (1) MCP4XXXDM-DB MCP42XXX, MCP42XX, MCP4021,
and MCP4011
8-pin SOIC/MSOP/TSSOP/DIP Evaluation Board SOIC8EV Any 8-pin device in DIP, SOIC,
MSOP, or TSSOP package
14-pin SOIC/MSOP/DIP Evaluation Board SOIC14EV Any 14-pin device in DIP, SOIC, or
MSOP package
Note 1: Requires the use of a PICDEM Demo board (see User’s Guide for details)
Application
Note Number Title Literature #
AN1080 Understanding Digital Potentiometers Resistor Variations DS01080
AN737 Using Digital Potentiometers to Design Low Pass Adjustable Filters DS00737
AN692 Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect DS00692
AN691 Optimizing the Digital Potentiometer in Precision Circuits DS00691
AN219 Comparing Digital Potentiometers to Mechanical Potentiometers DS00219
— Digital Potentiometer Design Guide DS22017
— Signal Chain Design Guide DS21825
MCP414X/416X/424X/426X
DS22059B-page 64 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 65
MCP414X/416X/424X/426X
10.0 PACKAGING INFORMATION
10.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
8-Lead DFN (3x3) Example:
Part Number Code Part Number Code
MCP4141-502E/MF DAAJ MCP4142-502E/MF DABC
MCP4141-103E/MF DAAK MCP4142-103E/MF DABD
MCP4141-104E/MF DAAM MCP4142-104E/MF DABF
MCP4141-503E/MF DAAL MCP4142-503E/MF DABE
MCP4161-502E/MF DAAT MCP4162-502E/MF DABG
MCP4161-103E/MF DAAU MCP4162-103E/MF DABH
MCP4161-104E/MF DAAW MCP4162-104E/MF DABK
MCP4161-503E/MF DAAV MCP4162-503E/MF DABJ
DAAJ
E816
256
XXXX
XYWW
NNN
8-Lead MSOP
XXXXXX
YWWNNN
Example
414152
816256
Part Number Code Part Number Code
MCP4141-502E/MS 414152 MCP4142-502E/MS 414252
MCP4141-103E/MS 414113 MCP4142-103E/MS 414213
MCP4141-104E/MS 414114 MCP4142-104E/MS 414214
MCP4141-503E/MS 414153 MCP4142-503E/MS 414253
MCP4161-502E/MS 416152 MCP4162-502E/MS 416252
MCP4161-103E/MS 416113 MCP4162-103E/MS 416213
MCP4161-104E/MS 416114 MCP4162-104E/MS 416214
MCP4161-503E/MS 416153 MCP4162-503E/MS 416253
MCP414X/416X/424X/426X
DS22059B-page 66 © 2008 Microchip Technology Inc.
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
XXXXXNNN
8-Lead PDIP
XXXXXXXX
YYWW
E/P 256
Example
4141-502
0816
3
e
8-Lead SOIC
XXXXXXXX
XXXXYYWW
NNN
Example
4141502E
SN^^^0816
256
3
e
© 2008 Microchip Technology Inc. DS22059B-page 67
MCP414X/416X/424X/426X
Package Marking Information (Continued)
10-Lead DFN (3x3) Example:
Part Number Code Part Number Code
MCP4242-502E/MF BAEM MCP4262-502E/MF BAEW
MCP4242-103E/MF BAEP MCP4262-103E/MF BAEX
MCP4242-104E/MF BAER MCP4262-104E/MF BAEZ
MCP4242-503E/MF BAEQ MCP4262-503E/MF BAEY
BAEH
0816
256
XXXX
YYWW
NNN
10-Lead MSOP
XXXXXX
YWWNNN
Example
423252
816256
Part Number Code Part Number C ode
MCP4242-502E/MS 424252 MCP4262-502E/MS 426252
MCP4242-103E/MS 424213 MCP4262-103E/MS 426213
MCP4242-104E/MS 424214 MCP4262-104E/MS 426214
MCP4242-503E/MS 424253 MCP4262-503E/MS 426253
14-Lead TSSOP
XXXXXXXX
YYWW
NNN
Example
4261502E
0816
256
14-Lead PDIP
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
Example
14-Lead SOIC (.150”)
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
Example
MCP4261
502E/SL^^
0816256
3
e
MCP4261
502E/P^^
0816256
3
e
XXXXX
16-Lead QFN (4x4)
XXXXXX
YYWWNNN
Example
XXXXXX
4261
502
0816256
E/ML^^
3
e
MCP414X/416X/424X/426X
DS22059B-page 68 © 2008 Microchip Technology Inc.
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+ *  ) !%"
 & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 9
% :./0
7;% 9  
%"$$    .
0%%* + ,2
75% +/0
,# ""<"% ,  = :
7<"% , +/0
,# ""5%   = 
0%%<"% ( . + +.
0%%5% 5  + ..
0%%%,# "" >  = =
BOTTOM VIEW
TOP VIEW
D
N
E
NOTE 1
12
EXPOSED PAD
b
e
N
L
E2
K
NOTE 1
D2
21
NOTE 2
A
A1
A3
  ) 0:/
© 2008 Microchip Technology Inc. DS22059B-page 69
MCP414X/416X/424X/426X
 !"#$
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
MCP414X/416X/424X/426X
DS22059B-page 70 © 2008 Microchip Technology Inc.
&' ()'#'($
%
  !"#$%!&'(!%&! %(%")%%%"
 &  ","%!"&"$ %!  "$ %!   %#".&& "
+ & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 9
% :./0
7;% = = 
""**  . 9. .
%"$$   = .
7<"% , /0
""*<"% , +/0
75% +/0
2%5% 5  : 9
2%% 5 .,2
2% I? = 9?
5"* 9 = +
5"<"% (  = 
D
N
E
E1
NOTE 1
12
e
b
A
A1
A2
c
L1 L
φ
  ) 0/
© 2008 Microchip Technology Inc. DS22059B-page 71
MCP414X/416X/424X/426X
*)) !"#*$
%
  !"#$%!&'(!%&! %(%")%%%"
 @$%0% %
+ &  ","%!"&"$ %!  "$ %!   %#"A "
 & "%,-.
/01/ & %#%! ))%!%% 
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 60;,
& 5&% 6 67 8
6!&($ 6 9
% /0
%% = = 
""**  . + .
/ %%  . = =
!"%!"<"% ,  + +.
""*<"% ,  . 9
75% +9 +:. 
%% 5 . + .
5"* 9  .
45"<"% (  : 
5)5"<"% (  9 
7)@ / = = +
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
  ) 09/
MCP414X/416X/424X/426X
DS22059B-page 72 © 2008 Microchip Technology Inc.
' ()'&&+ !"#'(*,$
%
  !"#$%!&'(!%&! %(%")%%%"
 @$%0% %
+ &  ","%!"&"$ %!  "$ %!   %#".&& "
 & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 9
% /0
7;% = = .
""**  . = =
%"$$
@
  = .
7<"% , :/0
""*<"% , +/0
75% /0
0&$B%C . = .
2%5% 5  = 
2%% 5 ,2
2% I? = 9?
5"*  = .
5"<"% ( + = .
"$% D.? = .?
"$%/%%& E.? = .?
D
N
e
E
E1
NOTE 1
12 3
b
A
A1
A2
L
L1
c
h
h
φ
β
α
  ) 0./
© 2008 Microchip Technology Inc. DS22059B-page 73
MCP414X/416X/424X/426X
' ()'&&+ !"#'(*,$
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
MCP414X/416X/424X/426X
DS22059B-page 74 © 2008 Microchip Technology Inc.
- !"#$
%
  !"#$%!&'(!%&! %(%")%%%"
 *&&# "%( %" 
+ *  ) !%"
 & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 
% ./0
7;% 9  
%"$$    .
0%%* + ,2
75% +/0
,# ""5%   +. 9
7<"% , +/0
,# ""<"% ,  .9 .
0%%<"% ( 9 . +
0%%5% 5 +  .
0%%%,# "" >  = =
D
N
NOTE 1 12
E
b
e
N
L
E2
NOTE 1
1
2
D2
K
EXPOSED
PAD
BOTTOM VIEW
TOP VIEW
A3 A1
A
NOTE 2
  ) 0:+/
© 2008 Microchip Technology Inc. DS22059B-page 75
MCP414X/416X/424X/426X
- !"#$
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
MCP414X/416X/424X/426X
DS22059B-page 76 © 2008 Microchip Technology Inc.
-&' ().#'($
%
  !"#$%!&'(!%&! %(%")%%%"
 &  ","%!"&"$ %!  "$ %!   %#".&& "
+ & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 
% ./0
7;% = = 
""**  . 9. .
%"$$   = .
7<"% , /0
""*<"% , +/0
75% +/0
2%5% 5  : 9
2%% 5 .,2
2% I? = 9?
5"* 9 = +
5"<"% ( . = ++
D
E
E1
N
NOTE 1
12
b
e
A
A1
A2 c
L
L1
φ
  ) 0/
© 2008 Microchip Technology Inc. DS22059B-page 77
MCP414X/416X/424X/426X
-/*)) !"#*$
%
  !"#$%!&'(!%&! %(%")%%%"
 @$%0% %
+ &  ","%!"&"$ %!  "$ %!   %#"A "
 & "%,-.
/01/ & %#%! ))%!%% 
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 60;,
& 5&% 6 67 8
6!&($ 6 
% /0
%% = = 
""**  . + .
/ %%  . = =
!"%!"<"% ,  + +.
""*<"% ,  . 9
75% +. . .
%% 5 . + .
5"* 9  .
45"<"% ( . : 
5)5"<"% (  9 
7)@ / = = +
N
E1
D
NOTE 1
123
E
c
eB
A2
L
A
A1
b1
be
  ) 0./
MCP414X/416X/424X/426X
DS22059B-page 78 © 2008 Microchip Technology Inc.
-/' ()'&&+ !"#'(*,$
%
  !"#$%!&'(!%&! %(%")%%%"
 @$%0% %
+ &  ","%!"&"$ %!  "$ %!   %#".&& "
 & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 
% /0
7;% = = .
""**  . = =
%"$$@   = .
7<"% , :/0
""*<"% , +/0
75% 9:./0
0&$B%C . = .
2%5% 5  = 
2%% 5 ,2
2% I? = 9?
5"*  = .
5"<"% ( + = .
"$% D.? = .?
"$%/%%& E.? = .?
NOTE 1
N
D
E
E1
123
b
e
A
A1
A2
L
L1
c
h
hα
β
φ
  ) 0:./
© 2008 Microchip Technology Inc. DS22059B-page 79
MCP414X/416X/424X/426X
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
MCP414X/416X/424X/426X
DS22059B-page 80 © 2008 Microchip Technology Inc.
-/01)'1&)' ()'0// !"#0''($
%
  !"#$%!&'(!%&! %(%")%%%"
 &  ","%!"&"$ %!  "$ %!   %#".&& "
+ & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 
% :./0
7;% = = 
""**  9  .
%"$$  . = .
7<"% , :/0
""*<"% , +  .
""*5%  . .
2%5% 5 . : .
2%% 5 ,2
2% I? = 9?
5"*  = 
5"<"% (  = +
NOTE 1
D
N
E
E1
12
e
b
c
A
A1
A2
L1 L
φ
  ) 09/
© 2008 Microchip Technology Inc. DS22059B-page 81
MCP414X/416X/424X/426X
-23// !"#3$
%
  !"#$%!&'(!%&! %(%")%%%"
 *  ) !%"
+ & "%,-.
/01 / & %#%! ))%!%% 
,21 $& '! !)%!%%'$$&%!  
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
4% 55,,
& 5&% 6 67 8
6!&($ 6 :
% :./0
7;% 9  
%"$$    .
0%%* + ,2
7<"% , /0
,# ""<"% , . :. 9
75% /0
,# ""5%  . :. 9
0%%<"% ( . + +.
0%%5% 5 +  .
0%%%,# "" >  = =
D
E
N
2
1
EXPOSED
PAD
D2
E2
2
1
e
b
K
N
NOTE 1
A3
A1
A
L
TOP VIEW BOTTOM VIEW
  ) 0/
MCP414X/416X/424X/426X
DS22059B-page 82 © 2008 Microchip Technology Inc.
% 2%& %!%*") '  %*$%%"%
%%133)))&&3*
© 2008 Microchip Technology Inc. DS22059B-page 83
MCP414X/416X/424X/426X
APPENDIX A: REVISION HISTORY
Revision B (December 2008)
The following is the list of modifications:
1. Updated IPU specifications to specify test
conditions and new limit.
2. Updated DFN and QFN package in “Package
Types (top view)”, to include Exposed Thermal
Pad samples (EP).
3. Added new descriptions in Section 3.0 “Pin
Descriptions”.
4. Added new Development Tool support item.
5. Updated Package Outline section.
Revision A (August 2007)
• Original Release of this Document.
APPENDIX B: MIGRATING FROM
THE MCP41XXX AND
MCP42XXX DEVICES
This is intended to give an overview of some of the
differences to be aware of when migrating from the
MCP41XXX and MCP42XXX devices.
B.1 MCP41XXX to MCP41XX
Differences
Here are some of the differences to be aware of:
1. SI pin is now SDI/SDO pin, and the contents of
the device memory can be read
2. Need to address the Terminal Connect Feature
(TCON register) of MCP41XX
3. MCP41XX supports software Shutdown mode
4. New 5 kΩ version
5. MCP41XX have 7-bit resolution options
6. MCP41XX are Non-Volatile
7. Alternate pinout versions (for Rheostat
configuration)
8. Verify device’s electrical specifications
9. Interface signals are now high voltage tolerant
10. Interface signals now have internal pull-up
resistors
B.2 MCP42XXX to MCP42XX
Differences
Here are some of the differences to be aware of:
1. Hardware Reset (RS) pin replace by Hardware
Write Protect (WP) pin
2. Daisy chaining of devices is no longer supported
3. SDO pin allows contents of device memory to be
read
4. Need to address the Terminal Connect Feature
(TCON register) of MCP42XX
5. MCP42XX supports software Shutdown mode
6. New 5 kΩ version
7. MCP42XX have 7-bit resolution options
8. MCP42XX are Non-Volatile
9. Alternate package/pinout versions (for Rheostat
configuration)
10. Verify device’s electrical specifications
11. Interface signals are now high voltage tolerant
12. Interface signals now have internal pull-up
resistors
MCP414X/416X/424X/426X
DS22059B-page 84 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 85
MCP414X/416X/424X/426X
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X/XX-XXX
Resistance PackageTemperature
Range
Device
Device MCP4141: Single Non-Volatile 7-bit Potentiometer
MCP4141T: Single Non-Volatile 7-bit Potentiometer
(Tape and Reel)
MCP4142: Single Non-Volatile 7-bit Rheostat
MCP4142T: Single Non-Volatile 7-bit Rheostat
(Tape and Reel)
MCP4161: Single Non-Volatile 8-bit Potentiometer
MCP4161T: Single Non-Volatile 8-bit Potentiometer
(Tape and Reel)
MCP4162: Single Non-Volatile 8-bit Rheostat
MCP4162T: Single Non-Volatile 8-bit Rheostat
(Tape and Reel)
MCP4241: Dual Non-Volatile 7-bit Potentiometer
MCP4241T: Dual Non-Volatile 7-bit Potentiometer
(Tape and Reel)
MCP4242: Dual Non-Volatile 7-bit Rheostat
MCP4242T: Dual Non-Volatile 7-bit Rheostat
(Tape and Reel)
MCP4261: Dual Non-Volatile 8-bit Potentiometer
MCP4261T: Dual Non-Volatile 8-bit Potentiometer
(Tape and Reel)
MCP4262: Dual Non-Volatile 8-bit Rheostat
MCP4262T: Dual Non-Volatile 8-bit Rheostat
(Tape and Reel)
Resistance Version: 502 = 5 kΩ
103 = 10 kΩ
503 = 50 kΩ
104 = 100 kΩ
Temperature Range I = -40°C to +85°C (Industrial)
E= -40°C to +125°C (Extended)
Package MF = Plastic Dual Flat No-lead (3x3 DFN), 8/10-lead
ML = Plastic Quad Flat No-lead (4x4 QFN), 16-lead
MS = Plastic Micro Small Outline (MSOP), 8-lead
P = Plastic Dual In-line (PDIP) (300 mil), 8/14-lead
SN = Plastic Small Outline (SOIC), (150 mil), 8-lead
SL = Plastic Small Outline (SOIC), (150 mil), 14-lead
ST = Plastic Thin Shrink Small Outline (TSSOP), 14-lead
UN = Plastic Micro Small Outline (MSOP), 10-lead
Examples:
a) MCP4141-502E/XX: 5 kΩ, 8LD Device
b) MCP4141T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4141-103E/XX: 10 kΩ, 8-LD Device
d) MCP4141T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4141-503E/XX: 50 kΩ, 8LD Device
f) MCP4141T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4141-104E/XX: 100 kΩ, 8LD Device
h) MCP4141T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4142-502E/XX: 5 kΩ, 8LD Device
b) MCP4142T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4142-103E/XX: 10 kΩ, 8-LD Device
d) MCP4142T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4142-503E/XX: 50 kΩ, 8LD Device
f) MCP4142T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4142-104E/XX: 100 kΩ, 8LD Device
h) MCP4142T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4161-502E/XX: 5 kΩ, 8LD Device
b) MCP4161T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4161-103E/XX: 10 kΩ, 8-LD Device
d) MCP4161T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4161-503E/XX: 50 kΩ, 8LD Device
f) MCP4161T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4161-104E/XX: 100 kΩ, 8LD Device
h) MCP4161T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4162-502E/XX: 5 kΩ, 8LD Device
b) MCP4162T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4162-103E/XX: 10 kΩ, 8-LD Device
d) MCP4162T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4162-503E/XX: 50 kΩ, 8LD Device
f) MCP4162T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4162-104E/XX: 100 kΩ, 8LD Device
h) MCP4162T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4241-502E/XX: 5 kΩ, 8LD Device
b) MCP4241T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4241-103E/XX: 10 kΩ, 8-LD Device
d) MCP4241T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4241-503E/XX: 50 kΩ, 8LD Device
f) MCP4241T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4241-104E/XX: 100 kΩ, 8LD Device
h) MCP4241T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4242-502E/XX: 5 kΩ, 8LD Device
b) MCP4242T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4242-103E/XX: 10 kΩ, 8-LD Device
d) MCP4242T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4242-503E/XX: 50 kΩ, 8LD Device
f) MCP4242T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4242-104E/XX: 100 kΩ, 8LD Device
h) MCP4242T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4261-502E/XX: 5 kΩ, 8LD Device
b) MCP4261T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4261-103E/XX: 10 kΩ, 8-LD Device
d) MCP4261T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4261-503E/XX: 50 kΩ, 8LD Device
f) MCP4261T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4261-104E/XX: 100 kΩ, 8LD Device
h) MCP4261T-104E/XX: T/R, 100 kΩ, 8LD Device
a) MCP4262-502E/XX: 5 kΩ, 8LD Device
b) MCP4262T-502E/XX: T/R, 5 kΩ, 8LD Device
c) MCP4262-103E/XX: 10 kΩ, 8-LD Device
d) MCP4262T-103E/XX: T/R, 10 kΩ, 8LD Device
e) MCP4262-503E/XX: 50 kΩ, 8LD Device
f) MCP4262T-503E/XX: T/R, 50 kΩ, 8LD Device
g) MCP4262-104E/XX: 100 kΩ, 8LD Device
h) MCP4262T-104E/XX: T/R, 100 kΩ, 8LD Device
XX = MF for 8/10-lead 3x3 DFN
= ML for 16-lead QFN
= MS for 8-lead MSOP
= P for 8/14-lead PDIP
= SN for 8-lead SOIC
= SL for 14-lead SOIC
= ST for 14-lead TSSOP
= UN for 10-lead MSOP
Version
MCP414X/416X/424X/426X
DS22059B-page 86 © 2008 Microchip Technology Inc.
NOTES:
© 2008 Microchip Technology Inc. DS22059B-page 87
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Linear Active Thermistor, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,
PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo,
PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total
Endurance, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2008, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:200 2 certif ication for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperi pherals, nonvola tile memo ry and
analog product s. In addition, Microchip ’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS22059B-page 88 © 2008 Microchip Technology Inc.
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Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
WORLDWIDE SALES AND SERVICE
01/02/08