2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–173 March 17, 2000-13
DUAL CHANNEL
ILD1/2/5
QUAD CHANNEL
ILQ1/2/5
Phototransistor
Optocoupler
FEATURES
• Current Transfer Ratio at
I
F
=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
• High Collector-Emitter Voltage
ILD/Q1: BV
CEO
=50 V
ILD/Q2, ILD/Q5: BV
CEO
=70 V
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS) Isolation Test Voltage, 5300 V
RMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage .............................................. 6.0 V
Forward Current ............................................60 mA
Surge Current.................................................. 2.5 A
Power Dissipation........................................ 100 mW
Derate Linearly from 25
°
C ...................... 1.3 mW/
°
C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ............................................................ 50 V
ILD/Q2, ILD/Q5................................................ 70 V
Collector Current ............................................50 mA
Collector Current (t<1.0 ms).........................400 mA
Power Dissipation........................................ 200 mW
Derate Linearly from 25
°
C .......................2.6 mW/
°
C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23
°
C/50%RH,
DIN 50014)...........................................5300 V
RMS
Creepage ..................................................
≥
7.0 mm
Clearance..................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C........................... R
IO
=10
12
Ω
V
IO
=500 V,
T
A
=100
°
C......................... R
IO
=10
11
Ω
Package Power Dissipation......................... 250 mW
Derate Linearly from 25
°
C ...................... 3.3 mW/
°
C
Storage Temperature.................... –40
°
C to +150
°
C
Operating Temperature ................. –40
°
C to +100
°
C
Junction Temperature..................................... 100
°
C
Soldering Temperature
(2.0 mm from case bottom) ........................ 260
°
C
V
DE
DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infra-
red LEDs and silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while maintaining a high degree
of electrical isolation between input and output. The ILD/Q1/2/5 are espe-
cially designed for driving medium-speed logic and can be used to elimi-
nate troublesome ground loop and noise problems. Also these couplers
can be used to replace relays and transformers in many digital interface
applications such as CRT modulation. The ILD1/2/5 has two isolated chan-
nels in a single DIP package and the ILQ1/2/5 has four isolated channels
per package.
See Appnote 45,
“How to Use Optocoupler Normalized Curves”.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
Dimensions in inches (mm)
Quad Channel
Dual Channel
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD/Q1/2/5
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–174 March 17, 2000-13
Characteristics
Package Transfer Characteristics
(Each Channel)
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
—
1.25 1.65 V
I
F
=60 mA
Reverse Current
I
R
—
0.01 10
µ
A
V
R
=6.0 V
Capacitance
C
0
—
25
—
pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance, Junction to Lead
R
THJL
—
750
—
K/W
—
Detector
Capacitance
C
CE
—
6.8
—
pF
V
CE
=5.0 V, f=1.0 MHz
Leakage Current, Collector-Emitter
I
CEO
—
5.0 50 nA
V
CE
=10 V
Saturation Voltage, Collector-Emitter
V
CESAT
—
0.25 0.4
—
I
CE
=1.0 mA, I
B
=20
µ
A
DC Forward Current Gain HFE 200 650 1800
—
V
CE
= 10 V, I
B
=20
µ
A
Saturated DC Forward Current Gain HFE
SAT
120 400 600
—
V
CE
= 0.4 V, I
B
=20
µ
A
Thermal Resistance, Junction to Lead
R
THJL
—
500
—
K/W
—
Parameter Symbol Min. Typ. Max. Unit Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
—
75
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
20 80 300 %
I
F
=10 mA,
V
CE
=10 V
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
—
170
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
100 200 500 %
I
F
=10 mA,
V
CE
=10 V
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter) CTR
CESAT
—
100
—
%
I
F
=10 mA,
V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter) CTR
CE
50 130 400 %
I
F
=10 mA,
V
CE
=10 V
Isolation and Insulation
Common Mode Rejection, Output High C
MH
—
5000
—
V/
µ
sV
CM=50 VP-P, RL=1.0 kΩ, IF=0 mA
Common Mode Rejection, Output Low CML —5000 —V/µsV
CM=50 VP-P, RL=1.0 kΩ, IF=10 mA
Common Mode Coupling Capacitance CCM —0.01 —pF —
Package Capacitance CIO —0.8 —pF VIO=0 V, f=1.0 MHz
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD/Q1/2/5
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–175 March 17, 2000-13
Typical Switching Times
Figure 1. Non-saturated switching timing
Figure 2. Non-saturated switching timing
Figure 3. Saturated switching timing
Figure 4. Saturated switching timing
VO
VCC=5 V
RL=75 Ω
F=10 KHz,
DF=50%
IF=10 mA
V0
IF
tPHL
tS
tR
tF
tD
50%
tPLH
VO
VCC=5 V
RL
F=10 KHz,
DF=50%
IF=10 mA
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH=1.5 V
Non-saturated
Saturated
Figure 5. Normalized non-saturated and saturated
CTR at TA=25°C versus LED current
Figure 6. Normalized non-saturated and saturated
CTR at TA=25°C versus LED current
Characteristic ILD/Q1
IF=20 mA
ILD/Q2
IF=5.0
mA
ILD/Q5
IF=10
mA
Unit Condition
Delay, tD0.8 1.7 1.7 µs
VCE=5.0 V
RL=75 Ω
50% of VPP
Rise time, tr1.9 2.6 2.6 µs
Storage, tS0.2 0.4 0.4 µs
Fall Time, tf1.4 2.2 2.2 µs
Propagation
H-L, tPHL
0.7 1.2 1.1 µs
Propagation
L-H, tPLH
1.4 2.3 2.5 µs
Characteris-
tic
ILD/Q1
IF=20 mA
ILD/Q2
IF=5.0 mA
ILD/Q5
IF=10 mA
Unit Condition
Delay, tD0.8 1.0 1.7 µs
VCE=0.4 V
RL=1.0 kΩ
VCC=5.0 V
VTH=1.5 V
Rise time, tr1.2 2.0 7.0 µs
Storage, tS7.4 5.4 4.6 µs
Fall Time, tf7.6 13.5 20 µs
Propagation
H-L, tPHL
1.6 5.4 2.6 µs
Propagation
L-H, tPLH
8.6 7.4 7.2 µs
.1 1 10 100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
IF - Forward Current - mA
VF - Forward Voltage - V
TA = -55°C
TA = 100°C
TA = 25°C
NCTR
CTRNF - Normalized CTR Factor
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR(SAT)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD/Q1/2/5
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–176 March 17, 2000-13
Figure 10. Collector-emitter current versus temperature and
LED current
Figure 11. Collector-emitter leakage current versus
temperature
Figure 12. Propagation delay versus collector load
resistor
6050403020100
0
5
10
15
20
25
30
35
50°C
70°C
85°C
IF - LED Current - mA
Ice - Collector Current - mA
25°C
-20 0 20 40 60 80 100
105
104
103
102
101
100
10-1
10-2
TA - Ambient Temperature - °C
ICEO - Collector-Emitter - nA
Typical
VCE = 10 V
.1 1 10 100
1000
100
10
1
2.5
2.0
1.5
1.0
RL - Collector Load Resistor - KΩ
tpLH - Propagation Low-High - µs
tpHL - Propagation High-Low - µs
tpLH
tpHL
TA = 25°C, IF = 10 mA
VCC = 5 V, Vth = 1.5 V
Figure 7. Normalized non-saturated and saturated
CTR at TA=50°C versus LED current
Figure 8. Normalized non-saturated and saturated CTR
at TA=70°C versus LED current
Figure 9. Normalized non-saturated and saturated CTR
at TA=85°C versus LED current
CTRNF - Normalized CTR Factor
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR
TA = 50°C
NCTR(SAT)
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
CTR - Normalized CTR Factor
.1 1 10 100
IF - LED Current - mA
NCTR
TA = 70°C
1.5
1.0
0.5
0.0
NCTR(SAT)
Normalized to:
VCE = 10 V, IF = 10 mA
TA = 25°C
CTRce(sat) VCE = 0.4 V
NCTR(SAT)
NCTR - Normalized CTR
.1 1 10 100
1.5
1.0
0.5
0.0
IF - LED Current - mA
NCTR
TA = 85°C
Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
