V
RRM
= 50 V - 600 V
I
F
= 15 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
V
1N3212 thru 1N3214R
Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R)
500
Silicon Standard
Recover
y
Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
400 600
pp g
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction - c
a
R
thJC
°C/W
V
R
= 50 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 150 °C
Conditions
350280
0.65 0.65
V
R
= 50 V, T
j
= 150 °C 10 10 10
500400
10
1N3214 (R)
1.5
10 10
-65 to 175 -65 to 175
-65 to 175 -65 to 175 -65 to 175
1N3212 (R) 1N3213 (R)
0.65
15 15 15
297 297 297
420
600
1.5 1.5
-65 to 175
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1N3212 thru 1N3214R
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