PSMN1R0-40YLDX - NEXPERIA - Datasheet.World

PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in

LFPAK56 using NextPower-S3 Schottky-Plus technology

30 November 2017 Product data sheet

1. General description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

•280 A capability

•Avalanche rated, 100% tested at IAS = 190 A

•NextPower-S3 technology delivers 'superfast switching with soft recovery'

•Low QRR, QG and QGD for high system efficiency and low EMI designs

•Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

•Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

•High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and

qualified to 150 °C

•Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

•Low parasitic inductance and resistance

3. Applications

•Synchronous rectification

•DC-to-DC converters

•High performance & high efficiency server power supply

•Motor control

•Power ORing

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - 40 V

IDdrain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 280 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 198 W

Tjjunction temperature -55 - 150 °C

Static characteristics

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 10; Fig. 11

- 1.1 1.4 mΩRDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 10; Fig. 11

- 0.93 1.1 mΩ

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 2 / 14

Symbol Parameter Conditions Min Typ Max Unit

Dynamic characteristics

QGD gate-drain charge - 17 - nC

QG(tot) total gate charge

ID = 25 A; VDS = 20 V; VGS = 4.5 V;

Fig. 12; Fig. 13 - 59 - nC

[1] 280A continuous current has been successfully demonstrated during application tests. Practically, the current will be limited by PCB,

thermal design and operation temperature.

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected to

drain

321 4

LFPAK56; Power-

SO8 (SOT1023)

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PSMN1R0-40YLD LFPAK56;

Power-SO8

Plastic single-ended surface-mounted package (LFPAK56); 4

leads

SOT1023

7. Marking

Table 4. Marking codes

Type number Marking code

PSMN1R0-40YLD 1D040L

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 3 / 14

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - 40 V

VDSM peak drain-source

voltage

tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ;

pulsed

- 45 V

VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 40 V

VGS gate-source voltage -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 198 W

VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 280 AIDdrain current

VGS = 10 V; Tmb = 100 °C; Fig. 2 - 198 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1284 A

Tstg storage temperature -55 150 °C

Tjjunction temperature -55 150 °C

Tsld(M) peak soldering

temperature

- 260 °C

VESD electrostatic discharge

voltage

HBM 2 - kV

Source-drain diode

ISsource current Tmb = 25 °C - 165 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1284 A

Avalanche ruggedness

ID = 85 A; Vsup ≤ 40 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

tp = 0.26 ms

[2] - 578 mJEDS(AL)S non-repetitive drain-

source avalanche

energy

ID = 25 A; Vsup ≤ 40 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

tp = 3.8 ms

[2] - 2472 mJ

IAS non-repetitive avalanche

current

Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C;

RGS = 50 Ω

[2] - 190 A

[1] 280A continuous current has been successfully demonstrated during application tests. Practically, the current will be limited by PCB,

thermal design and operation temperature.

[2] Protected by 100% test

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 4 / 14

03ne36

120

0 50 100 150 200

Tmb (°C)

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

aaa-008711

0 50 100 150 200

100

200

300

400

Tmb (°C)

(A)(A)

(1)(1)

(1) 280A continuous current has been successfully

demonstrated during applications tests. Practically,

the current will be limited by PCB, thermal design

and operating temperature.

Fig. 2. Continuous drain current as a function of

mounting base temperature

aaa-012570

10-1 1 10 102

10-1

102

103

104

VDS (V)

(A)(A)

DCDC

100 ms100 ms

10 ms10 ms

1 ms1 ms

100 µs100 µs

tp = 10 µstp = 10 µs

Limit RDSon = VDS / ID

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 5 / 14

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

Fig. 4 - 0.56 0.63 K/W

Fig. 5 - 50 - K/WRth(j-a) thermal resistance

from junction to

ambient Fig. 6 - 125 - K/W

aaa-009500

10-6 10-5 10-4 10-3 10-2 10-1 1

10-3

10-2

10-1

tp (s)

Zth(j-mb)

(K/W)(K/W)

δ = T

single shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-005750

Fig. 5. PCB layout for thermal resistance junction to

ambient 1” square pad; FR4 Board; 2oz copper

aaa-005751

Fig. 6. PCB layout for thermal resistance junction to

ambient minimum footprint; FR4 Board; 2oz

copper

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 6 / 14

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS=VGS; Tj = 25 °C 1.05 1.7 2.2 V

ΔVGS(th)/ΔT gate-source threshold

voltage variation with

temperature

25 °C ≤ Tj ≤ 150 °C - -5.1 - mV/K

VDS = 32 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 32 V; VGS = 0 V; Tj = 125 °C - 9 - µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 10; Fig. 11

- 0.93 1.1 mΩ

VGS = 10 V; ID = 25 A; Tj = 150 °C;

Fig. 10; Fig. 11

- - 1.93 mΩ

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 10; Fig. 11

- 1.1 1.4 mΩ

RDSon drain-source on-state

resistance

VGS = 4.5 V; ID = 25 A; Tj = 150 °C;

Fig. 10; Fig. 11

- - 2.45 mΩ

RGgate resistance f = 1 MHz - 1.3 - Ω

Dynamic characteristics

ID = 25 A; VDS = 20 V; VGS = 10 V;

Fig. 12; Fig. 13

- 127 - nC

ID = 25 A; VDS = 20 V; VGS = 4.5 V;

Fig. 12; Fig. 13

- 59 - nC

QG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 115 - nC

QGS gate-source charge - 19 - nC

QGS(th) pre-threshold gate-

source charge

- 12 - nC

QGS(th-pl) post-threshold gate-

source charge

- 8 - nC

QGD gate-drain charge

ID = 25 A; VDS = 20 V; VGS = 4.5 V;

Fig. 12; Fig. 13

- 17 - nC

VGS(pl) gate-source plateau

voltage

ID = 25 A; VDS = 20 V; Fig. 12; Fig. 13 - 2.7 - V

Ciss input capacitance - 8845 - pF

Coss output capacitance - 1878 - pF

Crss reverse transfer

capacitance

VDS = 20 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 14

- 382 - pF

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 7 / 14

Symbol Parameter Conditions Min Typ Max Unit

td(on) turn-on delay time - 52 - ns

trrise time - 62 - ns

td(off) turn-off delay time - 65 - ns

tffall time

VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V;

RG(ext) = 5 Ω

- 38 - ns

Qoss output charge VGS = 0 V; VDS = 20 V; f = 1 MHz;

Tj = 25 °C

- 51 - nC

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15 - 0.78 1.2 V

trr reverse recovery time - 48 - ns

Qrrecovered charge [1] - 67 - nC

tareverse recovery rise

time

- 28.6 - ns

tbreverse recovery fall

time

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 20 V; Fig. 16

- 23.8 - ns

[1] includes capacitive recovery

aaa-008714

0 0.5 1 1.5 2

120

160

200

VDS (V)

(A)(A)

2.4 V2.4 V

2.6 V2.6 V

2.8 V2.8 V

VGS = 3 VVGS = 3 V

3.5 V3.5 V

4.5 V4.5 V

10 V10 V

Fig. 7. Output characteristics; drain current as a

function of drain-source voltage; typical values

aaa-008715

0 2 4 6 8 10 12 14 16

VGS (V)

RDSon

(mΩ)(mΩ)

Fig. 8. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 8 / 14

aaa-008716

0 0.8 1.6 2.4 3.2 4

100

200

300

400

VGS (V)

(A)(A)

Tj = 25°CTj = 25°C150°C150°C

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-008717

0 40 80 120 160 200

ID (A)

RDSon

(mΩ)(mΩ) 2.8 V2.8 V 3 V3 V

3.5 V3.5 V

4.5 V4.5 V

10 V10 V

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

aaa-013039

-60 -30 0 30 60 90 120 150 180

0.4

0.8

1.2

1.6

Tj (°C)

10 V10 V

VGS = 4.5 VVGS = 4.5 V

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 12. Gate charge waveform definitions

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 9 / 14

aaa-008718

0 20 40 60 80 100 120 140

QG (nC)

VGS

(V)(V)

20 V20 V

VDS = 8 VVDS = 8 V

32 V32 V

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

aaa-008719

10-1 1 10 102

102

103

104

105

VDS (V)

(pF)(pF)

Ciss

Coss

Crss

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

aaa-008720

0 0.2 0.4 0.6 0.8 1 1.2

102

103

VSD (V)

(A)(A)

Tj = 25°CTj = 25°C150°C150°C

Fig. 15. Source current as a function of source-drain

voltage; typical values

003aal160

t (s)

(A)

IRM

0.25 IRM

tatb

trr

Fig. 16. Reverse recovery timing definition

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 10 / 14

11. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1023

sot1023_po

13-03-05

17-07-31

Unit

max

nom

min

1.10

0.95

0.15

0.00

0.50

0.35

4.41

3.62

0.25

0.19

0.30

0.24

4.45 5.30

4.95

1.27 0.25 0.1

Dimensions

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

Plastic single-ended surface-mounted package (LFPAK56E); 4 leads SOT1023

A1b b1

0.85

b2c c1D(1)

4.70

4.45

D1(1) E(1) E1(1)

3.7

3.5

e H

6.2

5.9

1.3

0.8

0.85

0.40

w y

8°

0°

0 2.5 5 mm

scale

mounting

base

detail X

ew A

1 2 3 4

(3x)

Fig. 17. Package outline LFPAK56; Power-SO8 (SOT1023)

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 11 / 14

12. Soldering

sot1023_fr

0.6

(3×)

0.7

(4×)

0.25

(2×)

0.25

(2×)

0.6

(4×)

4.2

4.7

0.25

(2×)

1.27

1.1

3.81

0.9

(3×)

SP opening =

Cu - 0.050

SR opening =

Cu + 0.075

2.15

2.55

3.45 3.5

3.3

solder lands

solder resist occupied area

solder paste

125 µm stencil

Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT1023)

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 12 / 14

13. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to the accuracy

or completeness of information included herein and shall have no liability for

the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be

valid in which the Nexperia product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no responsibility

for the content in this document if provided by an information source outside

of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make changes

to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

of an Nexperia product can reasonably be expected to result in personal

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Nexperia product is suitable

and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Nexperia products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Nexperia does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia products are

sold subject to the general terms and conditions of commercial sale, as

published at http://www.nexperia.com/profile/terms, unless otherwise agreed

in a valid written individual agreement. In case an individual agreement is

concluded only the terms and conditions of the respective agreement shall

apply. Nexperia hereby expressly objects to applying the customer’s general

terms and conditions with regard to the purchase of Nexperia products by

customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified, the

product is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’ warranty of the product

for such automotive applications, use and specifications, and (b) whenever

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 13 / 14

customer uses the product for automotive applications beyond Nexperia’

specifications such use shall be solely at customer’s own risk, and (c)

customer fully indemnifies Nexperia for any liability, damages or failed

product claims resulting from customer design and use of the product for

automotive applications beyond Nexperia’ standard warranty and Nexperia’

product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia PSMN1R0-40YLD

N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus

technology

Product data sheet 30 November 2017 14 / 14

14. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 5

10. Characteristics............................................................ 6

11. Package outline........................................................ 10

12. Soldering................................................................... 11

13. Legal information..................................................... 12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 30 November 2017