APT5016BFLL APT5016SFLL 500V 30A 0.160 POWER MOS 7 R FREDFET D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT5016BFLL_SFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25C 30 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 329 Watts Linear Derating Factor 2.63 W/C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 120 -55 to 150 C 300 Amps 30 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX UNIT Volts 0.160 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 6-2004 Characteristic / Test Conditions 050-7026 Rev C Symbol APT5016BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 250V tf ID = 30A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 256 VDD = 333V, VGS = 15V 172 ID = 30A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 14 RG = 1.6 Eon UNIT pF 60 72 16 42 10 10 27 ID = 30A @ 25C Turn-off Delay Time MAX 2833 600 VDD = 250V Rise Time td(off) TYP VGS = 10V Qgs tr MIN J 476 VDD = 333V VGS = 15V ID = 30A, RG = 5 215 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 30 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 120 Diode Forward Voltage 2 (VGS = 0V, IS = -30A) 1.3 Volts 15 V/ns Peak Diode Recovery dt UNIT dv/ 5 dt t rr Reverse Recovery Time (IS = -30A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 500 Q rr Reverse Recovery Charge (IS = -30A, di/dt = 100A/s) Tj = 25C 1.3 Tj = 125C 4.5 IRRM Peak Recovery Current (IS = -30A, di/dt = 100A/s) Tj = 25C 12 Tj = 125C 18 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.21 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7026 Rev C 6-2004 0.40 0.30 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.05 0 t1 t2 SINGLE PULSE 0.1 10-5 10-4 10-3 C/W 4 Starting Tj = +25C, L = 2.89mH, RG = 25, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID30A di/dt 700A/s VR 500 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5016BFLL_SFLL 80 8V 0.0174 Power (watts) 0.00401F 0.143 0.00641F 0.219 0.158F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (C) 15 &10V 60 7.5V 7V 40 6.5V 20 6V 5.5V Case temperature. (C) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 60 40 TJ = +125C 20 TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 1.1 VGS=10V 1.05 VGS=20V 1.0 0.95 0.9 0 I V 2.0 D 1.10 1.05 1.00 0.95 0.90 0.85 -50 = 15A GS = 10V 1.5 1.0 0.5 0.0 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) GS 1.15 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 NORMALIZED TO V = 10V @ 15A 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 0 TJ = -55C 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 050-7026 Rev C ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 Typical Performance Curves 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 5,000 OPERATION HERE LIMITED BY RDS (ON) 1 10mS D 14 VDS=100V 12 10 VDS=250V 8 VDS=400V 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 1,000 Coss 100 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = 30 Ciss 10 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 APT5016BFLL_SFLL 10,000 120 200 100 50 TJ =+150C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 60 V td(off) G 50 = 333V DD R 50 TJ =+25C = 5 T = 125C J V DD R G = 5 T = 125C J 30 L = 100H 20 td(on) 10 0 0 1000 10 DD R 050-7026 Rev C SWITCHING ENERGY (J) 6-2004 G 20 30 40 30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 0 1200 = 333V 10 V DD I diode reverse recovery. 600 Eon 400 200 Eoff 10 D 1000 J L = 100H 0 tr = 5 E ON includes 0 20 0 50 T = 125C 800 30 10 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V tf 40 = 333V tr and tf (ns) 40 SWITCHING ENERGY (J) td(on) and td(off) (ns) L = 100H 20 20 = 333V = 30A T = 125C J Eoff L = 100H EON includes 800 diode reverse recovery. 600 Eon 400 200 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT5016BFLL_SFLL Gate Voltage 10 % 90% TJ = 125 C Gate Voltage td(on) d(off) tr Drain Voltage Drain Current 90% 90% 5% 5% 10 % tf 10% 0 Drain Voltage Switching Energy T = 125 C J td(off) t Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DS ID V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7026 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 6-2004 3.50 (.138) 3.81 (.150)