JANTX2N2946A - Semicoa Semiconductors

MIL-PRF-19500/382K

5 June 2015

SUPERSEDING

MIL-PRF-19500/382J

18 April 2012

PERFORMANCE SPECIFICATION SHEET

* TRANSISTOR, PNP, SILI CON, LOW-POWER,

ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULA TED, RADIATION

HARDNESS ASSUARANCE, DEVICE TYPES 2N2944A, 2N2945A, 2N2946A,

QUALITY LEVELS: JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL–PRF–19500.

1. SCOPE

*1.1 Scope. This specification covers the performance requirements for low-power, PNP, silicon 2N2944A,

2N2945A, 2N2946A transistors for use in high-speed, switching and general purpose amplifier applications. A ‘M ’

and UB’M’ suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL–PRF–19500, and two levels of product assurance are provided for each

unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided

for quality levels JANTX, JANS, JANHC, and JANKC. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H”

are appended to the device prefix to identify devices, which have passed RHA requirements.

*1.2 Package and die outline s. The device package for the encapsulated device type are as follows: TO-46 in

accordance with figure 1 and surface mount in accordance with figure 2. The dimensions and topography for JANHC

and JANKC unencapsulated die are in accordance with figure 3.

1.3 Max imum ratin gs, unl es s other w ise spe cif ied TA = +25°C.

Types

PT

VEBO

VCBO

VCEO

VECO

IC

TJ and

RθJA

RθJSP

T

A

= +25°C

(1) (2)

T

SP

= +25°C

(1) (2)

T

STG

(3) (4)

2N2944A

2N2945A, AM

2N2946A

mW

400

mW

N/A

V dc

-15

-25

-40

V dc

-15

-25

-40

V dc

-10

-20

-35

V dc

-10

-20

-35

mA dc

-100

°C

-65 to

+200

°C/W

435

°C/W

N/A

2N2944AUB

2N2945AUB

2N2945AUBM

2N2946AUB

400

800

-15

-25

-40

-15

-25

-40

-10

-20

-35

-10

-20

-35

-100

-65 to

+200 435 (5)

435 (5)

90

(1) For derating, see figures 4 and 5.

(2) See 3.3 for abbreviations.

(3) For thermal curves, see figures 6 and 7.

AMSC N/A FSC 5961

[INCH-POUND

* Comments, suggestions, or questions on this document should be to DLA Land and Maritime, ATTN: VAC,

P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact infor mat ion

can change, you may want to verify the currency of this address information using the ASSIST Online database

at https://assist.dla.mil .

The documentation and process conversion

measures necessary to comply with this document

shall be completed by 5 September 2015.

MIL-PRF-19500/382K

1.3 Max imum ratin gs, unl es s other w ise spe cif ied TA = +25°C. - Continued.

(4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 6 for the

UB package and use RθJA.

(5) TA = +55°C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu, horizontal,

still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 m m), RθJA with a defined thermal resistance condition

included is measured at PT = 400 mW.

1.4 Primary electrical charact er ist ic s unless otherwise specified TA = +25°C.

Limits

hFE1

VCE = -0.5 V dc

IC = -1 mA dc

hFE (inv)1

VEC = -0.5 V dc

IE = -200 µA dc

rec (on)2

IB = -1 mA dc

Ie = 100 µA ac(rms)

IE = 0; f = 1 kHz

2N2944A

2N2945

2N2946A

2N2944A

2N2945A

2N2946A

2N2944A

2N2945A

A,

UB

AM,

AUBM

Min

Max

100

70

200

50

30

20

ohms

4

ohms

6

Limits

rec (on)2

IB = -1 mA dc

VEC (ofs)

I

e

= 100 µA ac(rms)

IE = 0; f = 1 kHz

IB = -200 µA dc

IE = 0

Ib = -1.0 mA dc

IE = 0

2N2946A

2N2944A

2N2945A

2N2946A

2N2944A

2N2945A

2N2946A

Min

Max

ohms

8

mV dc

-0.3

mV dc

-0.5

mV dc

-0.8

mV dc

-0.6

mV dc

-1.0

mV dc

-2.0

Limits

hfe 

f = 1 MHz

VCE = -6 V dc

IC = -1 mA dc

Cobo

VCB = -6 V dc

IE = 0

100 kHz ≤ f ≤ 1 MHz

Cibo

VEB = -6 V dc

IC = 0

100 kHz ≤ f ≤1 MHz

2N2944A

2N2945A

2N2946A

2N2945A

Min

Max

15

55

10

55

5

55

pF

10

pF

6

2

MIL-PRF-19500/382K

* 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL–PRF–19500, and as specified herein.

See 6.5 for PIN construction example and 6.6 for a list of available PINs.

* 1.5.1 JAN br and and qual ity lev el designators.

* 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated

devices that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN",

“JANTX", "JANTXV", and "JANS".

* 1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for

unencapsulated devices (die) that are applicable for this specification sheet from the lowest to the highest level are as

follows: "JANHC" and "JANKC".

* 1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels that are applicable for this specification

sheet from lowest to highest are as follows: "M", "D", "P", "L", "R", "F", "G", and "H").

* 1.5.3 Dev ice ty pe. The designation system for the device types of tra nsi stor s cov ered by this specif ica tio n sheet

are as follows.

* 1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and

letter symbols "2N".

* 1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification

sheet are as follows: "2944", “2945”, and "2946".

* 1.5.4 Suffix symbols. The following suffix symbols are incorporated in the PIN as applicable.

* 1.5.4.1 Fir st suffix symbol. The first suffix symbol "A" indicates that the switching transistor is a modified version

of the approved device type.

* 1.5.4.2 Fo llowing suffix symbols. The following suffix symbols are incorporated in the PIN for this specification

sheet:

A indicates a through-hole mount package similar to a TO–46 metal can (see figure 1).

AM Indicates a matched pair through-hole mount package similar to a TO–46 metal can (see figure 1).

AUB Indicates a 4 pad surface mount package (see figure 2).

AUBM Indicates a matched pair 4 pad surface mount package. (see figure 2).

* 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS-19500.

* 1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The

manufact urer die ide ntifier that is applicable for this specification sheet is "A" (see fi gure 3 and 6.5).

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MIL-PRF-19500/382K

Dimensions

Ltr.

Inches

Millimeters

Notes

Min

Max

Min

Max

CD

.178

.195

4.52

4.95

CH

.065

.085

1.65

2.16

HD

.209

.230

5.31

5.84

LC

.100 TP

2.54 TP

5

LD

.016

.021

0.41

0.53

LL

.500

1.750

12.70

44.45

6

LU

.016

.019

0.41

0.48

6

L1

.050

1.27

6

L2

.250

6.35

6

Q

.040

1.02

3

TL

.028

.048

0.71

1.22

8

TW

.036

.046

0.91

1.17

4

r

.010

0.25

9

α

45° TP

5

NOTES:

1. Dimensions ar e in inches.

2. Millimeters are given for general information only.

3. Symbol TL is measured from HD maximum.

4. Details of outline in this zone are optional.

5. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -. 000 in ch (0. 00 mm) bel ow seating plane

shall be within .007 inch (0.18 mm) radius of TP relative to tab. Device may be measured by direct

methods or by gauge.

6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimu m.

7. Lead number three is ele ctri ca lly connec ted to cas e.

8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

9. Symbol r applied to both inside corners of tab.

10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

11. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.

FIGURE 1. Physical dimensio ns (sim ilar t o TO -46).

TO-46

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MIL-PRF-19500/382K

Symbol

Dimensions

Note

Symbol

Dimensions

Note

Inches

Millimeters

Inches

Millimeters

Min

Max

Min

Max

Min

Max

Min

Max

BH

.046

.056

1.17

1.42

LS1

.035

.039

0.89

0.99

BL

.115

.128

2.92

3.25

LS2

.071

.079

1.80

2.01

BW

.085

.108

2.16

2.74

LW

.016

.024

0.41

0.61

CL

.128

3.25

r

.008

0.20

CW

.108

2.74

r1

.012

0.31

LL1

.022

.038

0.56

0.97

r2

.022

0.56

LL2

.017

.035

0.43

0.89

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensio ns, surf a ce mount (UB vers ion ).

UB

5

MIL-PRF-19500/382K

E B

Die size: .020 x .020 inch (0.508 mm x 0.508 mm).

Die thickness: .008 ±.0016 inch (0.203 mm ±0.041 mm).

Base pad: .002 x .003 inch (0.051 mm x 0.076 mm).

Emitter pad: .004 x .004 inch (0.102 mm x 0.102 mm).

Back metal: Gold, 6,500 ±1,950 Ang.

Top metal: Aluminum, 14,500 ±2,500 Ang.

Back side: Collector.

Glassivation: SiO2, 7,500 ±1,500 Ang.

FIGURE 3. Physical dimensions, JANKCA2N2944A through 2N2946A die

(also valid for JANHCA2N2944A through 2N2946A).

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MIL-PRF-19500/382K

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL–PRF–19500 – Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL–STD–750 – Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at http://quicksearch.dla.mil)

2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL–PRF–19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract aw ard (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. A bbr ev ia tio ns, sy mbol s, and defi niti on s used herein shall be as

specified in MIL–PRF–19500 and as follows.

hFE (inv) Forward-current transfer ratio except that the collector and emitter shall be interchanged in the test

circuit, i.e., IE /IB.

Ie Emitter current (rms).

M Matched pair.

rec(on) Small-signal emitter-collector on-state resistance.

RθJSP Thermal resistance junction to solder pads.

V(BR)ECO Breakdown voltage, emitter to collector, with base open-circuited.

VEC(ofs) Emitter to collector offset voltage, i.e., open-circuit voltage between emitter collector when the

base-collector junction is forward-biased.

Vec Emitter to collector voltage (rms).

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MIL-PRF-19500/382K

* 3.4 Interfa ce and phy si cal dim ensi ons . The interfa ce and ph y sical dimen sio ns sha ll be as spe cifi ed in

MIL–PRF–19500, and herein. The device package styles shall be as follows: Three pin metal can (similar to TO-46)

in accordance with fi gure 1, four pad surface mount case outline in accordance with figur e 2, and unencapsulated die

in accordance with fi gure 3 f or dev ice ty pes JANH C and JAN K C.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL–PRF–19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements and test levels shall be

as defined in MIL–PRF–19500.

3.6 Electr ica l perf or man ce ch aract er is tic s. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

* 3.7 Marking.

* 3.7.1 Thro ugh hole mount pac kage s. Marking shall be in accordance with MIL–PRF–19500.

* 3.7.2 Surface mount package s. Marking shall be in accordance with MIL–PRF–19500. The marking on the UB

and UBM packages shall consist of an abbreviated part number, the date code, and the manufacturer’s symbol or

logo. The prefixes JAN, JANTX, JANTXV and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N”

prefix and the “UB” suffix can also be omitted. The radiation hardened designator shall immediately precede (or

replace) the device “2N” identifier (depending upon degree of abbreviation required).

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL–PRF–19500 and as

specified herein.

4.2.1. JA NHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL–PRF–19500.

4.2.2 Group E qua lifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

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MIL-PRF-19500/382K

* 4.3 Screening.

* 4.3.1 Screening of encapsulated devices (quality levels JANS, JANTX, and JANTXV only). Screening of

encapsulated devices shall be in accordance with table E-IV of MIL–PRF–19500 and as specified herein. The

following mea sure me nts sha ll be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen Measurement

JANS JA NTX and JANTXV

(1) 3c

Required, method 3131 of MIL-STD-750.

(see 4.3.1.2)

Required, method 3131 of

MIL-STD-750. (see 4.3.1.2)

9 ICBO1 and hFE (inv)1 Not applicable

11

ICBO1; hFE (inv)1 ;

∆ICBO1 = 100 percent of initial value or

0.2 nA dc for 2N2944 and 2N2945,

0.5 nA dc for 2N2946

∆hFE (inv)1 = 25 percent of initial value.

ICBO1 and hFE (inv)1

12 See 4.3.1.2. See 4.3.1.2.

13

Subgroups 2 and 3 of table I herein;

∆ICBO1 = 100 percent of initial value or

0.2 nA dc for 2N2944 and 2N2945,

0.5 nA dc for 2N2946;

∆hFE (inv)1 = 25 percent of initial value.

Subgroups 2 of table I herein;

∆ICBO1 = 100 percent of initial value or

0.2 nA dc for 2N2944A, 2N2945A,

2N2945AM, 2N2945AUB, and 2N2945AUBM.

0.5 nA dc for 2N2946A;

∆

hFE (inv)1 = 25 percent of initial value.

(1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need

to be repeated in screening requirements.

4.3.1.1 Power burn-in con ditions. Power burn-in conditions are as follows: VCB = 10 to 30 V dc. Power shall be

applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justifi cati on de mon strating equivalence

is required. In addition, the manufacturing site’s burn-in data and performance history will be essential criteria for

burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.

4.3.1.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 us i ng the guidelines in that method for determining IM, IH, tH, tMD, (and VC where

appropriate).

9

MIL-PRF-19500/382K

* 4.3.2 Screening of unencapsulated die (JANHC and JANKC). Screening of JANHC and JANKC unencapsulated

die shall be in accordance with appendix G of MIL–PRF–19500. The burn-in duration of the JANKC level shall follow

the JANS requirements, the JANHC level shall follow the JANTX requirements of table I-IV of MIL–PRF–19500.

* 4.4 Conformance inspec tio n. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein.

4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordanc e w ith MIL–PRF–19500 and table

I herein.

* 4.4.2 Group B inspection.

* 4.4.2.1 Quality level JANS, table E-Via of MIL-PRF-19500. Group B inspection shall be conducted in accordance

with the tests and conditions specified for subgroup testing in table E-VIA (JANS) of MIL-PRF-19500. Delta

requirements only apply to subgroups B4 and B5 and shall be in accordance with 4.5.3 herein.

Subgroup Method Condition

B3 2037 Condition A.

B4 1037 2,000 cycles. No heat sink or forced air cooling on the devices shall be

permitted. VCB = 10 V dc. ton = toff = 3 minutes, power = 400 mW.

B5 1027 VCB = 10 V dc. PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a

failure occurs, resubmission shall be at the test conditions of the original sample).

Option 1: 96 hours minimum, sample size in accordance with table VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.

Option 2: 216 hours, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225°C minimum.

* 4.4.2.2 (Quality levels JAN, JANTX, and JANTXV), table E-VIb of MIL-PRF-19500. Se parate sample s may be

used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In

addition, all catastrophic failures during CI (confor man ce ins pect ion) shall be analyz ed to the extent possible to

identify root cause and corrective action. Whenever a failure is identified as wafer lot and/or wafer processing

related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate

determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot

are screened to eliminate the failure mode. Delta requirements for JAN, JANTX, and JANTXV shall be after each

step and shall be in accordance with 4.5.6 herein.

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MIL-PRF-19500/382K

Step Method Condition

1 1026 Steady-state life: 1,000 hours, VCB = 10 V dc, power shall be applied and ambient

temperature adjusted to achieve TJ = +150°C minimum, and a minimum of PD = 75

percent of PT as defined in 1.3. n = 45, c = 0. The sample size may be increased and the

test time decreased as long as the devices are stressed for a total of 45,000 device hours

mi nimum, and th e actual tim e of test is at least 340 hours.

2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.

n = 45 devices, c = 0.

3 1032 High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See

MIL-PRF-19500.

b. Shall be chosen fr om an inspe ctio n lot that has been sub mitt ed to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

* 4.4.3 Group C inspe ctio n. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-V II of MIL–PRF–19500, and 4.4.3.1 (JANS), and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. delta requirements shall be in accordance with table I, subgroup 2 and 4.5.6

herein.

* 4.4.3.1 Quality level JANS, table E-VII of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E (not applicable to UB).

C5 3131 RθJA only, as applic able (see 1.3) and in accordance th erma l impe dan ce curv es on

figures 6 and 7.

C6 1026 Steady-state life: 1,000 hours, VCB = 10 V dc; power shall be applied to achieve

TJ = +150°C minimum and a minimum of PD = 75 percent of maximum rated PT

as defined in 1.3 n = 45, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a tot al of 45,00 0 devi ce hours

minimum, and the actual time of test is at least 340 hours.

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MIL-PRF-19500/382K

* 4.4.3.2 Quality levels (JAN, JANTX, and J ANTXV), table E-VII of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E (not applicable to UB).

C5 3131 RθJA only, as applicable (see 1.3) and in accordance thermal impedan ce curv es on

figures 6 and 7.

C6 1037 Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

4.4.4 Gro up D inspec tion . Conformance inspection for hardness assured JANS, and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL–PRF–19500 a nd meth od 1019 of M IL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

* 4.4.5 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-IX of MIL–PRF–19500 and as specified herein. Delta requirements shall be

in accordance with ta ble I, subgroup 2 and 4.5.6 herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.2 Emitter to collector breakdown voltage. Method of test shall be in accordance with method 3011 of

MIL-STD-750, test condition D, except that all references to the collector and the emitter of the transistor shall be

interchanged.

4.5.3 Forward-current transfer ratio (inverted connection). Method of test shall be in accordance with method

3076 of MIL-STD-750, except that all references to the collector and the emitter of the transistor shall be

interchanged in the test circuit. Then: hFE (inv) = IE / IB

4.5.4 Emitter to collector offset voltage. The transistor shall be tested in the circuit of figure 8. The base current

shall be adjusted to the specified value. The voltage between the emitter and collector shall then be measured using

a voltmeter with an input impedance high enough that halving it does not change the measured value within the

required accuracy of the measurement.

12

MIL-PRF-19500/382K

4.5.5 Small-signal emitter-collector on-state resistance. The transistor shall be tested in the circuit of figure 9.

The base current shall be adjusted to the specified value and an ac sinusoidal signal current, Ie, of the specified rm s

value shall be applie d betw ee n the emitter and collector. The rms voltage, Vec, between the emitter and collector

shall be measured using an ac voltmeter with an input impedance high enough that halving it does not change the

measured value within the required accuracy of the measurement. The small-signal emitter-collector on-state

resistance shall then be determined as follows:

rec (on) = Vec / Ie

Where Vec is the rms voltage between the emitter and collector.

* 4.5.6 Delta requirements. Delta requirements shall be as specified bel ow . (1) (2) (3) (4)

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

1

Collector to base

cutoff curren t

3036

Bias condition D:

IE = 0

∆ICBO1

100 percent of

initial value or

2N2944A

VCB = -15 V dc

.2 nA

2N2945A,

V

CB

= -25 V dc

.2 nA

2N2946A

VCB = -40 V dc

.5 nA

2

Forward-current

transfer ratio

(inverted

connection)

3076

VEC = -0.5 V dc;

IE = 200 µA dc;

(see 4.5.3)

∆hFE(inv)1

25 percent of

initial value.

(1) The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows: Subgroup 5, see 4.5.6,

steps 1 and 2.

(2) The electrical measurements for 4.4.2.2 are as follow s: See 4.5.6, steps 1 and 2.

(3) The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, step 1 and step 2

(JANS).

(4) Group E table III herein, see 4.5.6, steps 1 and 2.

13

MIL-PRF-19500/382K

TABLE I. Group A inspection.

Inspection 1/

MIL–STD–750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical 3/

examination

2071

Solderability 3/ 4/

2026

n = 15 leads, c = 0

Resistance to 3/ 4/ 5/

solvent

1022

n = 15 devices, c = 0

Temp cycling 3/ 4/

1051

Test condition C, 25 cycle s,

n = 22 devices, c = o

Electrical measurements

4/

Table I, subgr oup 2 herein

Heremet ic sea l 4/ 6/

Fine leak

Gross leak

1071

n = 22 devices, c = 0

Bond strength 3/ 4/

2037

Precondition TA = +250°C at

t = 24 hrs or TA = +300°C at

t = 2 hrs, n = 11 wires, c = 0

Decap internal visua l

(design verification) 4/

2075

n = 4 devices, c = 0

Subgroup 2

Thermal impedance

3131

See 4.3.3

ZθJX

°

C/W

Breakdown voltage

collector to emitt er 7/

3011

Bias condition D;

IC = -10 µA dc

V(BR)CEO

2N2944A

2N2945A

2N2946A

-10

-20

-35

V dc

Collector to base

cutoff current 7/

3036

Bias condition D

ICBO1

2N2944A

2N2945A

2N2946A

V

CB

= -15 V dc

VCB = -25 V dc

VCB = -40 V dc

10

µA dc

See footnotes at the end of table.

14

MIL-PRF-19500/382K

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL–STD–750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - continued.

Emitter to base

cutoff current 7/

3061

Bias condition D

I

EBO1

10

µA dc

2N2944A

2N2945A

2N2946A

V

EB

= -15 V dc

VEB = -25 V dc

VEB = -40 V dc

Breakdow n voltage, emit ter

to collector 7/

3011

Bias condition B; I

E

= -10 µA

dc; IB = 0; (see 4.5.2)

V

(BR)ECO

2N2944A

2N2945A

2N2946A

-10

-20

-35

V dc

Collector to base cutoff

current 7/

3036

Bias condition D

I

CBO2

2N2944A

2N2945A

2N2946A

V

CB

= -12 V dc

VCB = -20 V dc

VCB = -32 V dc

-0.1

-0.2

-0.5

nA dc

Emitter to base cutoff

current 7/

3061

Bias condition D

IEBO2

2N2944A

2N2945A

2N2946A

V

EB

= -12 V dc

VEB = -20 V dc

VEB = -32 V dc

-0.1

-0.2

-0.5

nA dc

Forward-current transfer

ratio 7/

3076

V

CE

= -0.5 V dc;

IC = -1.0 mA dc

h

FE1

2N2944A

2N2945A

2N2945AM

2N2946A

100

70

50

200

Forward-current transfer

ratio (inverted connection)

7/

3076

V

EC

= -0.5 V dc;

IE = -200 µA dc (see 4.5.3)

h

FE

(inv)

1

2N2944A

2N2945A

2N2946A

50

30

20

See footnotes at the end of table.

15

MIL-PRF-19500/382K

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL–STD–750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - continued.

Emitter to collector offset

voltage 7/

I

B

= -200 µA dc; I

E

= 0;

(see 4.5.4 and figure 8)

V

EC

(ofs)

1

2N2944A

2N2945A

2N2946A

-0.3

-0.5

-0.8

mV dc

Emitter to collector offset

voltage 7/

IB = -1 mA dc; IE = 0;

(see 4.5.4 and figure 8)

VEC (ofs)2

2N2944A

2N2945A

2N2946A

-0.6

-1.0

-2.0

mV dc

Emitter to collec tor offset

voltage 7/

IB = -2 mA dc; IE = 0;

(see 4.5.4 and figure 8)

VEC (ofs)3

2N2944A

2N2945A

2N2946A

-1.0

-1.6

-2.5

mV dc

Subgroup 3

High-temperature

operation:

T

A

= +100°C

Collector to base cutoff

current 7/

3036

Bias condition D; I

C

= 0

I

CBO3

2N2944A

2N2945A

2N2946A

V

CB

= -15 V dc

VCB = -25 V dc

VCB = -40 V dc

10

20

25

nA dc

Emitter to base cutoff

current 7/

3061

Bias condition D; I

C

= 0

I

EBO3

2N2944A

2N2945A

2N2946A

V

CB

= -15 V dc

VCB = -25 V dc

VCB = -40 V dc

10

15

20

nA dc

See footnotes at the end of table.

16

MIL-PRF-19500/382K

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL–STD–750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 3 – continued.

Low-temperature operation:

T

A

= -55°C

Forward-current

transfer ratio 7/

2N2944A

2N2945A

2N2946A

3076

V

CE

= -0.5 V dc;

IC = -1 mA dc

h

FE2

35

25

20

Forward-current transfer

ratio (inverted connection) 7/

2N2944A

2N2945A

2N2946A

3076

V

EC

= -0.5 V dc;

IE = -200 µA dc (see 4.5.3)

h

FE

(inv)

2

25

15

10

Subgroup 4

Small-signal emitter-

collector on-state res istance

7/

IB = -100 µA dc; IE = 0;

Ie = 100 µA ac (rms)

f = 1 kHz (see 4.5.5 and figure 9)

rec (on)1

2N2944A

2N2945A

2N2946A

10

12

14

ohm

Small-signal emitter-

collector on-state resistance

7/

IB = -1 mA dc; IE = 0;

Ie = 100 µA ac (rms)

f = 1 kHz (see 4.5.5 and figure 9)

rec (on)2

2N2944A

2N2945A

2N2946A

4

6

8

ohm

See footnotes at the end of table.

17

MIL-PRF-19500/382K

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL–STD–750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 4 – continued.

Magnitude of comm on-

emitter small-signal short-

circuit forward-current

transfer ratio 7/

V

CE

= -6 V dc;

IC = -1 mA dc;

f = 1 MHz

h

fe



2N2944A

2N2945A

2N2946A

15

10

5

55

Open circuit output

capacitance

3236

VCB = -6 V dc; IE = 0;

100 kHz ≤ f ≤ 1 MHz Cobo

10

pF

Input capacitance

(output open-circuited)

3240

V

EB

= -6 V dc; I

C

= 0;

100 kHz ≤ f ≤ 1 MHz (see 4.5.1)

C

ibo

6.0

pF

Pulse response:

Delay time

3251

Test condition B (see figure 10)

td

50

ns

Rise time

3251

Test condition B (see figure 10

tr

100

ns

Storage time

3251

Test condition B (see figure 10)

ts

350

ns

Fall time

3251

Test condition B (see figure 10)

t

f

100

ns

Subgroups 5, and 6

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests.

3/ Separate samples may be used.

4/ Not required for JAN S.

5/ Not required for laser marked devices.

6/ Her metic seal test is an end-point to temperature cycling in addition to electrical measurements.

7/ 2N2945AM and 2N2945AUBM shall meet all other requirements as specified in accordance with table I for

2N2945A and 2N2945AUB.

18

MIL-PRF-19500/382K

TABLE II. Group D inspection.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 4/

Neutron irradiati on

1017

Neutron exposure V

CES

= 0 V

Breakdown voltage

collector to emitter

2N2944A

2N2945A

2N2946A

3011

Bias condition D

IC = -10 µA dc

V

(BR)CEO

-10

-20

-35

V dc

Collector to base cutoff

current

2N2944A

2N2945A

2N2946A

3036

Bias condition D

VCB = -15 V dc

VCB = -25 V dc

VCB = -40 V dc

I

CBO1

20

µA dc

Emitter to base cutoff

current

2N2944A

2N2945A

2N2946A

3061

Bias condition D

VBE = -15 V dc

VBE = -25 V dc

VBE = -40 V dc

I

EBO1

20

µA dc

Breakdown voltage

emitter to collector

2N2944A

2N2945A

2N2946A

3011

Bias condition D B; I

E

= -10 µA dc;

IB = 0 mA dc, pulsed (see 4.5.2)

V

(BR)ECO

-10

-20

-35

V dc

Collector to base cutoff

current

2N2944A

2N2945A

2N2946A

3036

Bias condition D;

VCB = -12 V dc

VCB = -20 V dc

VCB = -32 V dc

I

EBO2

-0.2

-0.4

-1.0

ηA dc

Emitter to base cutoff

current

2N2944A

2N2945A

2N2946A

3061

Bias condition D;

VCB = -12 V dc

VCB = -20 V dc

VCB = -32 V dc

I

CBO2

-0.2

-0.4

-1.0

ηA dc

Forward-current transf er

ratio

2N2944A

2N2945AB

2N2945AM, UBM

2N2946A

3076

V

CE

= -0.5 V dc, I

C

= -1.0 mA dc

[h

FE1

]

5/ [50]

5/ [35]

5/ [25]

200

Forward-current transf er

ratio

2N2944A

2N2945A

2N2946A

3076

V

EC

= -0.5 V dc, I

C

= -200 µA dc;

pulsed (see 4.5.1)

[h

FE

(inv)

1

]

5/ [25]

5/ [15]

5/ [10]

See footnotes at end of table.

19

MIL-PRF-19500/382K

TABLE II. Group D inspection. - Continued.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 4/ - Continued

Emitter to collector offset

voltage

2N2944A

2N2945A

2N2946A

3071

I

B

= -200 µA dc, I

E

= 0,

pulsed (see 4.5.4 and figure 8)

V

EC(ofs)1

-0.5

-0.8

-1.2

mV dc

Emitte r to collect or offset

voltage

2N2944A

2N2945A

2N2946A

3071

I

B

= -1.0 mA dc, I

E

= 0

pulsed (see 4.5.4 and figure 8)

V

EC

(ofs)

2

-0.9

-1.5

-3.0

mV dc

Emitter to collector offset

voltage

2N2944A

2N2945A

2N2946A

3071

I

B

= -2.0 mA dc, I

E

= 0

pulsed (see 4.5.4 and figure 8) VEC (ofs)3

-1.5

-2.4

-3.8

mV dc

Subgroup 2 4/

Steady-sta te total dose

irradiation

2N2944A

2N2945A

2N2946A

1019

Gamma exposure VECS = -8 V

Gamma exposure VECS = -16 V

Gamma exposure VECS = -28 V

Breakdown voltage

collector to emitter

2N2944A

2N2945A

2N2946A

3011

Bias condition D

IC = -10 µA dc

V

(BR)CEO

-10

-20

-35

V dc

Collector to base cutoff

current

2N2944A

2N2945A

2N2946A

3036

Bias condition D

VCB = -15 V dc

VCB = -25 V dc

VCB = -40 V dc

I

CBO1

20

µA dc

Emitter to base cutoff

current

2N2944A

2N2945A

2N2946A

3061

Bias condition D

VBE = -15 V dc

VBE = -25 V dc

VBE = -40 V dc

I

EBO1

20

µA dc

Breakdown voltage

emitter to collector

2N2944A

2N2945A

2N2946A

3011

Bias condition B; I

E

= -10 µA dc;

IB = 0 mA dc, pulsed (see 4.5.2)

V

(BR)ECO

-10

-20

-35

V dc

See footnotes at end of table.

20

MIL-PRF-19500/382K

TABLE II. Group D inspection. - Continued.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 4/ - Continued.

Collector to base cutoff

current

2N2944A

2N2945A

2N2946A

3036

Bias condition D

VCB = -12 V dc

VCB = -20 V dc

VCB = -32 V dc

I

CBO2

-0.2

-0.4

-1.0

ηA dc

Emitter to base cutoff

current

2N2944A

2N2945A

2N2946A

3061

Bias condition D

VCB = -12 V dc

VCB = -20 V dc

VCB = -32 V dc

I

EBO2

-0.2

-0.4

-1.0

ηA dc

Forward-current transf er

ratio

2N2944A

2N2945A

2N2945AM, UBM

2N2946A

3076

V

CE

= -0.5 V dc, I

C

= -1.0 mA dc

[h

FE1

]

5/ [50]

5/ [35]

5/ [25]

200

Forward-current transf er

ratio

2N2944A

2N2945A

2N2946A

3076

V

EC

= -0.5 V dc, I

C

= -200 µA dc;

pulsed (see 4.5.1)

[h

FE

(inv)

1

]

5/ [25]

5/ [15]

5/ [10]

Emitter to collector offset

voltage

2N2944A

2N2945A

2N2946A

I

B

= -200 µA dc, I

E

= 0,

pulsed (see 4.5.4 and figure 8)

V

EC(ofs)1

-0.5

-0.8

-1.2

mV dc

Emitter to collector offset

voltage

2N2944A

2N2945A

2N2946A

I

B

= -1.0 mA dc, I

E

= 0

pulsed (see 4.5.4 and figure 8)

V

EC(ofs)2

-0.9

-1.5

-3.0

mV dc

Emitter to collector offset

voltage

2N2944A

2N2945A

2N2946A

I

B

= -2.0 mA dc, I

E

= 0

pulsed (see 4.5.4 and figure 8)

V

EC(ofs)3

-1.5

-2.4

-3.8

mV dc

1/ Tests to be performed on all d ev ices receiving radiation exposure.

2/ For sampling plan, see MIL-PRF-19500.

3/ Electrical characteristics apply to all device types unless otherwise noted.

4/ See 6.2.e herein.

5/ See method 1019 of MIL-STD-750, for how to determine [hFE] by first calculating the delta(1/hFE) from the pre-

and post-radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE]

value can never exceed the pre-radiation minimum hFE that it is based upon.

21

MIL-PRF-19500/382K

TABLE III. Group E ins pe ctio n (all qual ity level s) – for qualification or re-qualificat ion only .

Inspection MIL–STD–750 Qualification

Method Conditions

Subgroup 1

45 devices

c = 0

Temperature c ycling

(air to air)

1051

Test condition C, 500 cycles

Hermetic seal

Fine leak

Gross leak

1071

Electrical measurements

See table I, subgroup 2 and 4.5.6 herein.

Subgroup 2

45 devices

c = 0

Intermittent life

1037

VCB = 10 V dc, ton = toff = 3 minutes minimum

Pt = 400 mW, 6,000 cycles.

Electrical measurements

See table I, subgroup 2 and 4.5.6 herein.

Subgroup 4

15 devices

c = 0

Thermal resistanc e

3131

RθJSP can be calculated but shall be measured once in

the same package with a similar die size to confirm

calculati ons (m ay apply to multiple specif ication sheets ).

Thermal resistanc e curves

See MIL–PRF–19500.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

Subgroup 8

45 devices

c = 0

Reverse stability

1033

Condition B.

22

MIL-PRF-19500/382K

NOTES:

1. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will

intersect the appropriate power for the desired maximum TJ allowed.

2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and p ower rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.

4. Derate desi gn curv es cho se n at T J ≤, 125°C, and 110°C to show power rating where most users want to

limit TJ in their application.

FIGURE 4. Derating for 2N2944A, 2N2944AUB, 2N2945A, 2N2945AUB, 2N2946A,

and 2N2946AUB (RθJA), base case mounted (TO-46 and UB).

23

MIL-PRF-19500/382K

NOTES:

1. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect

the appropriate power for the desired maximum TJ allowed.

2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 200°C) and power rating specified.

(See 1.3 herein.)

3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.

4. Derate design curves chosen at TJ ≤, 125°C, and 110°C to show power rating where most users want to limit TJ

in their application.

FIGURE 5. Derating for 2N2944AUB, 2N2945AUB, 2N2945AUBM,

and 2N2946AUB (RθJSP), base case mounted (UB).

24

MIL-PRF-19500/382K

TO-46 free air TA = +25°C with 16 x 23 mil chip.

TA = +25°C, Pdiss = 400 mW, 435°C/W (ambient thermal resistance varies with power).

FIGURE 6. Thermal impedance graph (RθJA) for (TO-46).

Maximum Thermal Impedance

1

10

100

1000

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

10000

Time (s)

Theta (C/W)

25

MIL-PRF-19500/382K

Thermal resistance = 90°C/W

Solder mounted to heavy copper clad PCB at TC = +25°C.

FIGURE 7. Thermal impedance graph (UB).

Maximum Thermal Impedance

1

10

100

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

Time (s)

Theta (C/W)

26

MIL-PRF-19500/382K

FIGURE 8. Emitter to collector offset voltage test circuit.

FIGURE 9. Small-signal emitter to collector on set voltage test circuit.

27

MIL-PRF-19500/382K

NOTES:

1. The rise time (tr ) and fall time (tf ) of the applied pulse shall be ≤ 10 ns, duty cycle ≤ 2 percent. The input

pulse width shall be 200 ns.

2. Output monitored with an oscilloscope with the following characteristics: Zin ≤ 1 MΩ, tr ≤ 1 ns.

FIGURE 10. Pulse response test circuit.

28

MIL-PRF-19500/382K

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these

personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging

requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or

Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the

managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

* 6.2 Acqui sit ion requ ir e ment s. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. The complete PIN (see 1.2 and 6.5).

e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1

testing is desired, it should be spe cifi ed in th e contract.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or

not such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3 990 or e-mail vqe.chief@dla.mil. An

online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil .

6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example JANHCA2N2945) will be identified on the QML.

Die ordering information

Manufacturer

34156

2N2944A

2N2945A

2N2946A

JANHCA2N 2944A, JAN KC A2N2944A

JANHCA2N 2945A, JAN KC A2N2945A

JANHCA2N 2946A, JAN KC A2N2946A

29

MIL-PRF-19500/382K

* 6.5 PIN constr u ctio n ex ample s.

* 6.5.1 Encapsulated devices. The PIN for encapsulated devices are constructed using the following form:

JANTXV M 2N 2944 A

JAN brand and quality level (see 1.5.1)

RHA designator, if applicable (see 1.5.2)

First number and first letter symbols (see 1.5.3.1)

Second number symbols (see 1.5.3.2)

Suffix letters (see 1.5.4)

6.5.2 Un-encapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.

JANHC M 2N 2944 A

JAN brand and quality level (see 1.5.1)

RHA designator, if applicable (see 1.5.2)

First number and first letter symbols (see 1.5.3.1)

Second number symbols (see 1.5.3.2)

Suffix letters (see 1.5.4)

6.6 List of PINs.

6.6.1 Encapsulated devices. The following is a list of possible PINs available for encapsulated devices covered

by this specif ic atio n sheet.

PINs for devices of

the base quality level

PINs for devices of the

“TX” quality level

PINs for devices of the

“TXV” quality level

PINs for devices of the “TXV”

quality level with RHA (1)

JAN2N2944A

JANTX2N2944A

JANTXV2N2944A

JANTXV#2N2944A

JAN2N2944AM

JANTX2N2944AM

JANTXV2N2944AM

JANTXV#2N2944AM

JAN2N2944AUB

JANTX2N2944AUB

JANTXV2N2944AUB

JANTXV#2N2944AUB

JAN2N2944AUBM

JANTX2N2944AUBM

JANTXV2N2944AUBM

JANTXV#2N2944AUBM

JAN2N2945A

JANTX2N2945A

JANTXV2N2945A

JANTXV#2N2945A

JAN2N2945AM

JANTX2N2945AM

JANTXV2N2945AM

JANTXV#2N2945AM

JAN2N2945AUB

JANTX2N2945AUB

JANTXV2N2945AUB

JANTXV#2N2945AUB

JAN2N2945AUBM

JANTX2N2945AUBM

JANTXV2N2945AUBM

JANTXV#2N2945AUBM

JAN2N2946A

JANTX2N2946A

JANTXV2N2946A

JANTXV#2N2946A

JAN2N2946AM

JANTX2N2946AM

JANTXV2N2946AM

JANTXV#2N2946AM

JAN2N2946AUB

JANTX2N2946AUB

JANTXV2N2946AUB

JANTXV#2N2946AUB

JAN2N2946AUBM

JANTX2N2946AUBM

JANTXV2N2946AUBM

JANTXV#2N2946AUBM

30

MIL-PRF-19500/382K

6.6.1 Encapsulated devices - continued.

PINs for devices of

the “S” quality

level

PINs for devices of

the “S” quality leve

with RHA (1)l

JANS2N944A

JANS#2N2944A

JANS2N944AM

JANS#2N2944AM

JANS2N944AUB

JANS#2N2944AUB

JANS2N944AUBM

JANS#2N2944AUBM

JANS2N945A

JANS#2N2945A

JANS2N945AM

JANS#2N2945AM

JANS2N944AUBM

JANS#2N2945AUB

JANS2N944AUBM

JANS#2N2945AUBM

JANS2N945A

JANS#2N2946A

JANS2N946AM

JANS#2N2946AM

JANS2N946AUB

JANS#2N2946AUB

JANS2N946AUMB

JANS#2N2946AUBM

(1) The number sign (#) represents one of eight RHA designators

available (“M”, “D”, “P”, “L”, “R”, “F”, “G”, or “H”).

6.6.2 Unencapsulated devices. The following is a list of possible PINs available for unencapsulated devices

covered by this spec ifi cati on s heet.

JANHCA#2N944A

JANHCA#2N945A

JANHCA#2N946A

JANKCA#2N944A

JANKCA#2N945A

JANKCA#2N2946A

(1) The number sign (#) represents one of eight RHA designators available (“M”,

“D”, “P”, “L”, “R”, “F”, “G”, or “H”).

6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 85 (Project 5961-2015-044)

NASA - NA

DLA - CC

Review activities:

Army - AV, MI

Air Force - 19, 71, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil.

31