Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
MMBTH10LT1/D
MMBTH10LT1G,
NSVMMBTH10LT1G,
MMBTH10LT3G,
MMBTH10-4LT1G
VHF/UHF Transistor
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25C
Derate above 25C
PD
225
1.8
mW
mW/C
Thermal Resistance,
Junction to Ambient (Note 1)
RJA 556 C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25C
Derate above 25C
PD
300
2.4
mW
mW/C
Thermal Resistance,
Junction to Ambient (Note 2)
RJA 417 C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
MMBTH10LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBTH10−4LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MMBTH10LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAMS
SOT−23 (TO−236)
CASE 318
STYLE 6
3EM MG
G
MMBTH10LT1G,
NSVMMBTH10LT1G
3E4 MG
G
MMBTH10−04LT1G
3EM, 3E4= Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
NSVMMBTH10LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10−4LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
25 − −
Vdc
Collector−Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
30 − −
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
3.0 − −
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
− − 100
nAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
− − 100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G
hFE
60
120
−
−
−
240
−
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
VCE(sat)
− − 0.5
Vdc
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VBE
− − 0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G
fT
650
800
−
−
−
−
MHz
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
− − 0.7
pF
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
− − 0.65
pF
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
rbCc
− − 9.0
ps
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10−4LT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
600
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
gib (mmhos)
Figure 2. Polar Form
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
gfb (mmhos)
Figure 4. Polar Form
70 60 50 10 0 -10
0204060
0
80100
70
60
50
40
30
20
0
60
30
20
10
10 30 50 70
-10
10
200 300 400 500 700 1000
80
-20
-30
-40
-50
-60
40 30 20 -20 -30
50
40
100 200 300 400 500 700 1000
0
-10
-20
-30
30
20
10
40
70
60
50
bfb
-gfb
100
200 400
700
1000 MHz
1000 MHz
100
200
400
700
gib
-bib
jb (mmhos)
ib
jb (mmhos)
fb
, FORWARD TRANSFER ADMITTANCE (mmhos) , INPUT ADMITTANCE (mmhos)
ib
yfb, FORWARD TRANSFER ADMITTANCE
COMMON−BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C)
yib, INPUT ADMITTANCE
ib yy
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10−4LT1G
http://onsemi.com
4
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 5. Rectangular Form
grb (mmhos)
Figure 6. Polar Form
f, FREQUENCY (MHz)
Figure 7. Rectangular Form
gob (mmhos)
Figure 8. Polar Form
0 2.0 4.0 6.0 8.0 10
-2.0 -1.2 -0.4 0.4
0
-5.0
1.2 2.0
10
4.0
2.0
0
-1.8 -0.8 0 0.8 1.6
8.0
6.0
-4.0
-3.0
-2.0
-1.0
100
4.0
3.0
1.0
0200 300 400 500 700 1000
5.0
100 200 300 400 500 700 1000
0
3.0
2.0
1.0
4.0
7.0
6.0
5.0
10
9.0
8.0
2.0
bob
gob
-brb
-brb
-grb
MPS H11
MPS H10
100
200
400
700
1000 MHz
100
200
400
700
1000 MHz
jb (mmhos)
rb
jb (mmhos)
ob
, OUTPUT ADMITTANCE (mmhos)
ob , REVERSE TRANSFER ADMITTANCE (mmhos)
rb
yob, OUTPUT ADMITTANCE
COMMON−BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C)
yrb, REVERSE TRANSFER ADMITTANCE
yy
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10−4LT1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5817−1050
MMBTH10LT1/D
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