MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring SOT-23 (TO-236) CASE 318 STYLE 6 Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant* 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Symbol Max Unit 3EM MG G 3E4 MG G 225 1.8 mW mW/C MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10-04LT1G 556 C/W 3EM, 3E4 = Specific Device Code M = Date Code* G = Pb-Free Package 300 2.4 mW mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. RJA 417 C/W TJ, Tstg -55 to +150 C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range RJA PD (Note: Microdot may be in either location) *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. November, 2011 - Rev. 4 MARKING DIAGRAMS PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Semiconductor Components Industries, LLC, 2011 2 EMITTER 1 ORDERING INFORMATION Device Package Shipping MMBTH10LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NSVMMBTH10LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTH10LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBTH10-4LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTH10LT1/D MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 25 - - 30 - - 3.0 - - - - 100 - - 100 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10-4LT1G hFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) VBE - 60 120 - - - 240 - - 0.5 - - 0.95 Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz) MMBTH10LT1G, NSVMMBTH10LT1G MMBTH10-4LT1G fT Collector-Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Ccb Common-Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Crb Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) rbCc http://onsemi.com 2 MHz 650 800 - - - - - - 0.7 - - 0.65 - - 9.0 pF pF ps MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE 0 70 gib -10 60 -20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE (mmhos) 80 -bib 40 30 1000 MHz -30 700 -40 20 400 10 0 200 -50 100 200 300 400 500 f, FREQUENCY (MHz) 700 -60 1000 0 20 10 30 Figure 1. Rectangular Form 40 50 gib (mmhos) 60 100 70 80 Figure 2. Polar Form 70 60 bfb 60 400 200 50 50 600 100 40 700 -gfb 30 jb fb (mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) yfb, FORWARD TRANSFER ADMITTANCE 20 10 40 30 1000 MHz 0 -10 20 -20 -30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 Figure 3. Rectangular Form 60 50 40 10 30 20 gfb (mmhos) 0 Figure 4. Polar Form http://onsemi.com 3 -10 -20 -30 MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) 0 5.0 100 4.0 200 -1.0 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) yrb, REVERSE TRANSFER ADMITTANCE 3.0 400 -2.0 -brb -brb 2.0 -3.0 700 MPS H10 1.0 -4.0 -grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 1000 MHz 700 -5.0 -2.0 -1.8 -1.2 -0.8 1000 Figure 5. Rectangular Form -0.4 0 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 6. Polar Form yob, OUTPUT ADMITTANCE 10 1000 MHz 9.0 8.0 8.0 7.0 700 jb ob(mmhos) yob, OUTPUT ADMITTANCE (mmhos) 10 6.0 5.0 bob 4.0 6.0 4.0 400 3.0 200 2.0 2.0 gob 1.0 100 0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 0 1000 Figure 7. Rectangular Form 2.0 4.0 6.0 gob (mmhos) Figure 8. Polar Form http://onsemi.com 4 8.0 10 MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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