SSM3J109TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V)
Ron = 172 mΩ (max) (@VGS = -2.5 V)
Ron = 130 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Symbol Rating Unit
Drain-source voltage VDS -20 V
Gate-source voltage VGSS ± 8 V
DC ID -2
Drain current Pulse IDP -4 A
PD (Note 1) 800
Drain power dissipation PD (Note 2) 500
mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on a ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition Min Typ. Max Unit
V (BR) DSS ID = -1 mA, VGS = 0 -20 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯
V
Drain cutoff current IDSS V
DS = -20 V, VGS = 0 ⎯ ⎯ -10 μA
Gate leakage current IGSS V
GS = ±8 V, VDS = 0 ⎯ ⎯ ±1 μA
Gate threshold voltage Vth V
DS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V
Forward transfer admittance ⏐Yfs⏐ V
DS = -3 V, ID = -1 A (Note 3) 2.4 4 ⎯ S
ID = -1.0 A, VGS = -4 V (Note 3) ⎯ 91 130
ID = -0.5 A, VGS = -2.5 V (Note 3) ⎯ 123 172
Drain-source ON-resistance RDS (ON)
ID = -0.2 A, VGS = -1.8 V (Note 3) ⎯ 175 300
mΩ
Input capacitance Ciss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 335 ⎯ pF
Output capacitance Coss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 70 ⎯ pF
Reverse transfer capacitance Crss V
DS = -10 V, VGS = 0, f = 1 MHz ⎯ 56 ⎯ pF
Turn-on time ton ⎯ 20 ⎯
Switching time Turn-off time toff
VDD = -10 V, ID = -1A,
VGS = 0 ~ -2.5 V, RG = 4.7 Ω ⎯ 20 ⎯
ns
Drain-source forward voltage VDSF I
D = 2 A, VGS = 0 (Note 3)
⎯ 0.85 1.2 V
Note 3: Pulse test
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2U1A
Weight: 6.6 mg (typ.)
1. Gate
2. Source
3. Drain
-0.05
1.7±0.1
2.1±0.1
0.65±0.05
1
2
2.0±0.1
3
0.7±0.05
+0.1
0.3
0.166±0.05
UFM
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SSM3J109TU
2007-11-01
2
Switching Time Test Circuit
(a) Test circuit (b) VIN
Marking Equivalent Circuit
(top view)
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
(c) VOUT
VDD = − 10 V
RG = 4.7 Ω
Duty ≦ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
IN
0
−2.5V
10 μs VDD
OUT
RG
RL
ton
90%
10%
−2.5 V
0 V
90%
10%
toff
tr tf
VDS
(
ON
)
VDD
JJ2
1 2
3
1 2
3
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SSM3J109TU
2007-11-01
3
ID - VDS
0
-1
-2
-3
-4
-5
0 -0.2 -0.4 -0.6 -0.8 -1
Drain-Source Voltage VDS (V)
Drain Current ID (A)
VGS = -1.2 V
-1.5
-10 -4
-1.8
-2.5 Common Source
Ta = 25℃
ID - VGS
-0.0001
-0.001
-0.01
-0.1
-1
-10
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Ta = 85℃-25℃
25℃
Common Source
VDS = -3 V
RDS (ON) - VGS
0
100
200
300
012345678910
Gate-Source Voltage VGS (V)
Drain-Source ON-Resistance
RDS (ON) (mΩ)
Common Source
Ta = 25℃
ID = -1 A
-0.5 A
-0.2 A
RDS (ON) - Ta
0
50
100
150
200
250
300
-60 -35 -10 15 40 65 90 115 140
Ambient Temperature Ta (℃)
Drain-Source ON-Resistance
RDS (ON) (ｍΩ)
VGS = -4 V,ID = -1 A
-2.5 V,-0.5 A
-1.8 V,-0.2 A
Common Source
RDS (ON) - ID
0
50
100
150
200
250
300
0 -1-2-3-4-5
Drain Current ID (A)
Drain-Source ON-Resistance
RDS (ON) (mΩ)
Common Source
Ta = 25℃
VGS = -1.8 V
-4 V
-2.5 V
Vth - Ta
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-25 0 25 50 75 100 125 150
Ambient Temperature Ta (℃)
Gate Threshold Voltage Vth (V)
Common Source
ID = -1 mA
VDS = -3 V
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SSM3J109TU
2007-11-01
4
|Yfs| - ID
0.1
1
10
-0.01 -0.1 -1 -10
Drain Current ID (A)
Forward Transfer Admittance |Yfs| (S)
Ta = 85℃-25℃
25℃
Common Source
VDS = -3 V
Ta = 25℃
IDR - VDS
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Drain-Source Voltage VDS (V)
Drain Reverse Current IDR (A)
Ta = 85℃
25℃
-25℃
Common Source
VGS = 0
Ta = 25℃
C - VDS
10
100
1000
-0.1 -1 -10 -100
Drain-Source Voltage VDS (V)
Capacitance C (pF)
Ciss
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25℃
t - ID
1
10
100
1000
0.01 0.1 1 10
Drain Current ID (A)
Switching Time t (ns)
Common Source
VDD = -10 V
VGS = 0 ～ -2.5 V
Ta = 25℃
toff
tf
ton
tr
PD - Ta
0
200
400
600
800
1000
0 20 40 60 80 100 120 140 160
Ambient Temperature Ta (°C)
Drain Power Dissipation PD (mW)
a
b
a: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 25.4 mm x 25.4 mm
b: Mounted on a ceramic board
(25.4 mm x 25.4 mm x 0.8 mm)
Cu pad: 25.4 mm x 25.4 mm
Rth - tw
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Pulse W idth tw (S)
Transient Thermal Impedance Rth (°C/W)
a
b
c
Single Pulse
a: Mounted on a ceramic board
(25.4 mm x 25.4 mm x 0.8 mm)
Cu pad: 25.4 mm x 25.4 mm
b: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 25.4 mm x 25.4 mm
c: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 0.45 mm x 0.8 mm x 3
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SSM3J109TU
2007-11-01
5
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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