G E SOLID STATE Oh gue were RS ere ae Optoelectronic Specifications DE Bse7sc81 OOLW?bb & rt owe we T-UI-B7 Photon Coupled Isolator MOC3020-MOC3023 . Ga As Infrared Emitting Diode & Light Activated Triac Driver The GE Solid State MOC3020-MOC3023 series consists of a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions like a triac, in a dual-in-line package. These devices areespecially designed for triggering power triacs while maintain- ing dielectric isolation from the trigger control circuit. They are mounted in dual-in-line packages. These devices are also available in Surface-Mount packaging, absolute maximum ratings: (25C) INFRARED EMITTING DIODE Power Dissipation *100 milliwatts _| Forward Current (Continuous) 50 mitliamps Forward Current (Peak) 3 amperes (Pulse width I psec, 300 pps) Reverse Voltage 3 volts *Derate 1.33mW/C above 25C ambient. OUTPUT DRIVER Off-State Output Terminal Voltage 400 Volts On-State RMS Current 100 milliamps (Full Cycle Sine Wave, 50 to 60 Hz) Peak Nonrepetitive Surge Current 12 amperes (PW = 10 ms, DC = 10%) Total Power Dissipation @ T, = 25C **300 milliwatts **Derate 4.0 mW/C above 25C ambient. TOTAL DEVICE Storage Temperature -55C to +150C Operating Temperature -40C to +100C Lead Soldering Time (at 260C) 10 seconds Isolation Surge Voltage: (Input to Output) TS00OVAC (Peak AC Voltage, 60 Hz, 5 second duration) wi Covered under U.L. component recognition program, reference file E51868 (SEATING PLANE J K $l 1 aL MILLIMETEAS INCHES SYMBOL | an, | max, | win, | max | NOTES A sax! sso | 330 | 380 B 762 REF. 00 REF. 1 _ 864 = 340 2 D Ae SOR Ow on E = sox | 200 3 F lor 173 | om | 070 G 27% | 280 | 0% | ito H _ 216 oss 4 J 203 5 008 O12 K 254 - 100 M 15 - Is N 3a} ois | P = 9.53 ~ 315 R 292 343 AW 5 5 610 6.86 20 270 tS 1. INSTALLED POSITION LEAD CENTERS. 2 OVERALL INSTALLED DIMENSION 3, THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANE. 4. FOUR PLACES. . oe0aTTe Ts | v PINS IS gt ve 8 ie } CONNECT I 3 4 t+ J - 6 SOLID STATE MOC3020-MOC3023 Vee O1 DEB sa7soan NO19?b7 & UOPTOCIOCIONIG opeciimauurre individual electrical characteristics (25C) T'4/-87 EMITTER SYMBOL TYP. MAX, UNITS Forward Voltage Ve 1.2 1.5 volts (Ip = 10 mA) Reverse Current Ik - 100 microamps (V, = 3Y) Capacitance CG 50 _ picofarads (V = 0, f= 1 MHz) DETECTOR See Note i SYMBOL | TYP. | MAX. UNITS Peak Off-State Current Vorm 400 V Tora 100 nanoamps Peak On-State Voltage ly = 100 mA Vom 2.5 3.0 volts Critical Rate-of-Rise of Off-State Voltage = T, = 85C dv/dt 12.0 - volts/ psec. coupled electrical characteristics (25C) SYMBOL | TYP. | MAX. | UNITS IRED Trigger Current, Current Required to Latch Output MOC3020 Ter _ 30 milliamps (Main Terminal Voltage = 3.0 V, R, = 150 Q MOC3021 In _ 15 | milliamps MOC3022 Ter _ 10 milliamps MOC3023 Ipr 5 milliamps Holding Current, Either Direction ly 100 |microamps NOTE I: Ratings apply to either polarity of Pin 6 referenced to Pin 4. Voltages must be applied within dv/dt rating. 201 r