14-7
FRONTIER
ELECTRONICS CO., LTD.
DUAL SURFACE MOUNT SWITCHING DIODE
FEATURES
! FAST SWITCHING
! SURFACE MOUNT PACKAGE IDEALLY SUITED
FOR AUTOMATIC INSERTION
! HIGH CONDUCTANCE
MECHANICAL DATA
! CASE：SOT-23, PLASTIC
! TERMINALS：SOLDERABLE PER MIL-STD-202,METHOD 208
! P OLARITY ：SEE DI AGRAM
! WEIGHT：0.008 GRAMS
D
IME NSIONS IN MILL IMETERS
RATINGS SYMBOL BAW56 UNITS
PEAK REPETITIVE REVERSE VOLTAGE
WORKING PE AK REVERSE VOLTAGE
DC BOLKING VOLTAGE
VRRM
VRWM
VR
70 V
FORWARD CONTINUOUS CURRENT (NOTE 1） IFM 300 mAdc
RECTIFIED CURRENT（AVERAGE）,HALF WAVE
RECTIFICATION WITH RESIS T LOAD
AT Tamb＝25℃ AND ≧ 50MHZ （NOTE 1）
IO150 mA
PEAK FORWARD SURGE CURRENT @ t=1.0 S
@ t=1.0 μSIFM(surge) 1.0
2.0 A
TOTAL DEVICE DISSIPATION FR-5 BOARD（NOTE 1）
DERATE ABOVE 25℃PD350
2.8 mW
mW/℃
THERMAL RESISTANCE JUNCTION TO AMBIENT RΘJA 357 ℃ / W
TOTAL DEVICE DISSIPATION ALUMINA SUBSTRATE
(NOTE 2）
DERATE ABOVE 25℃
PD350
2.8 mW
mW/℃
JUNCTION TEMPER ATURE TJ- 55 TO + 150 ℃
STORAGE TEMPERATURE RANGE TS- 55 TO + 150 ℃
ELECTRONICAL CHARACTERISTICS @ TA=25℃ UNLESS OTHERWISE SPECIFIED
CHARACTERISTICS SYMBOL Min. Max. Unit Test Condition
MAXIMUM FORWARD VOLTAGE VF-715
855
1.0
1.25
mV
mV
V
V
IF =1.0 mA
IF =10 mA
IF =50 mA
IF =150 mA
MAXIMUM PEAK REVERSE CURRENT IR-2.5
30
100 μAVR=70Vdc
VR=25Vdc, TJ=150℃
VR=70Vdc, TJ=150℃
CAPACITANCE CJ-4.0 pF VR=0, f=1.0MHZ
REVERSE RECOVERY TIME TRR -6.0 nS I
F=10mA to IRR=1.0 mA
V
R=6.0V , RL=100Ω
NOTE ：
1. DIODE ON ALUMINA 10mm×8 mm×0.7mm
BAW56
D
BC
A
2
3
1
G
E
H
JK
M
L
3
2
DIM Min Max
A 0.37 0.50
B 1.20 1.39
C 2.10 2.50
D 0.89 1.02
E 0.45 0.60
G 1.78 2.04
H 2.80 3.04
J 0.013 0.10
K 0.89 1.11
L 0.45 0.60
M 0.085 0.177
1
14-8
RATING AND CHARACTERISTICS CURVES BAW56
FIG.1 - FORWARD CHARACTERISTICS
IF , INSTANTANEOUS FORWARD CURRENT, (mA)
1000
100
10
1.0
0.1
0.01
TJ=100℃
TJ=25℃
0 1 2
INSTANTANEOUS FORW ARD VOLTAGE (V)
FIG.2- LEAK AGE CURRENT vs
JUNCTION TEMPERTURE
0 100 200
JUNCTION TEMPER TURE ( ℃)
VR=20V
IR , LEAKAGE CURRENT (nA)
10,000
1000
100
10
1
