Document Number: 93583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
VSKD600 Series
Vishay Semiconductors
FEATURES
High current capability
High surge capability
High voltage ratings up to 2000 V
3000 VRMS isolating voltage with non-toxic substrate
Industrial standard package
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
Rectifying bridge for large motor drives
Rectifying bridge for large UPS
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IF(AV) 600 A
Type Modules - Diode, High Voltage
SUPER MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV)
600 A
TC100 °C
IF(RMS)
942 A
TC100 °C
IFSM
50 Hz 19 000
A
60 Hz 20 100
I2t
50 Hz 1805
kA2s
60 Hz 1683
I2t18 050 kA2s
VRRM Range 800 to 2000 V
TStg, TJRange - 40 to 150 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ MAXIMUM
mA
VSKD600..
08 800 900
50
12 1200 1300
16 1600 1700
20 2000 2100
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VSKD600 Series
Vishay Semiconductors Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 600 A
100 °C
Maximum RMS forward current IF(RMS) 180° conduction, half sine wave at TC = 100 °C 942 A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
19.0
kA
t = 8.3 ms 20.1
t = 10 ms 100 % VRRM
reapplied
16.2
t = 8.3 ms 17.2
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1805
kA2s
t = 8.3 ms 1683
t = 10 ms 100 % VRRM
reapplied
1319
t = 8.3 ms 1230
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 18 050 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.70 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.77
Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.28 m
High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.25
Maximum forward voltage drop VFM Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse 1.45 V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
RMS insulation voltage VINS t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current IRRM TJ = TJ maximum, rated VRRM applied 50 mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
temperature range TJ, TStg - 40 to 150 °C
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.065
K/W
Maximum thermal resistance,
case to heatsink RthC-hs 0.02
Mounting torque
± 10 %
SMAP to heatsink A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound.
6 to 8
Nm
busbar to SMAP 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
Document Number: 93583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VSKD600 Series
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules) Vishay Semiconductors
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.009 0.006
TJ = TJ maximum K/W
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 7
00
30° 60° 90°
120°
180°
Maximum Allowable Case Temperature (°C
)
Conduction Angle
Average Forward Current (A)
VSKD600.. Series
R (DC) = 0.065 K/W
thJC
80
90
100
110
120
130
140
150
0 200 400 600 800 10
00
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C
)
Conduction Period
Average Forward Current (A)
VSKD600.. Series
R (DC) = 0.065 K/W
thJC
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
VSKD600.. Series
Per Junction
T = 150°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 200 400 600 800 1000
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
VSKD600.. Series
Per Junction
T = 150°C
J
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VSKD600 Series
Vishay Semiconductors Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
4000
6000
8000
10000
12000
14000
16000
18000
110100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
VSKD600.. Series
Per Junction
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
4000
6000
8000
10000
12000
14000
16000
18000
20000
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren t
Initial T = 150°C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration.
J
VSKD600.. Series
Per Junction
0 25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C )
R=0.01K/W-DeltaR
thS
A
0.02K/W
0.03 K
/W
0.04K/W
0.05K/W
0.08K/W
0.12K/W
0.2K/W
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSKD600.. Series
Single Phase Bridge
Connected
T = 150°C
J
Document Number: 93583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VSKD600 Series
Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules) Vishay Semiconductors
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Thermal Impedance ZthJC Characteristic
0255075100125150
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.02K/W
0.03K/W
0.05K/W
0.08K/W
0.12K/W
0.2K/W
thS
A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 300 600 900 1200 1500 1800
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSKD600.. Series
Three Phase Bridge
Connected
T = 150°C
J
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W )
VSKD600.. Series
Per Junction
Steady State Value:
R = 0.065 K/W
(DC Operation)
thJC
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VSKD600 Series
Vishay Semiconductors Standard Diodes, 600 A
(SUPER MAGN-A-PAK Power Modules)
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two diodes doubler circuit D
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95088
1- Module type
2- Circuit configuration D = 2 diodes in series
(see Circuit Configuration table)
3- Current rating
4- Voltage code x 100 = VRRM (see Voltage Ratings table)
Device code
1324
VSK D 600 - 20
+- ~1
2
3
Document Number: 95088 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-Mar-08 1
Super MAGN-A-PAK Diode
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
52 (2.05)
60.0 (2.36)
48.0 (1.89)
31.0
(1.22)
50.0
(1.97)
44.0
(1.73)
M10
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
20.1
(0.78)
36.4 (1.14) 4.5 (0.20)
28.0
(1.10)
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
149.0 (5.67)
1.0 (0.039)
32
1
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Revision: 12-Mar-12 1Document Number: 91000
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