SKiM406GD066HD
© by SEMIKRON Rev. 4 – 15.07.2011 1
SKiM® 63
GD
Trench IGBT Modules
SKiM406GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
•V
CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 600 V
ICTj= 175 °C Ts=25°C 468 A
Ts=70°C 374 A
ICnom 400 A
ICRM ICRM = 2xICnom 800 A
VGES -20 ... 20 V
tpsc
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj=150°C 6µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Ts=25°C 360 A
Ts=70°C 281 A
IFnom 400 A
IFRM IFRM = 2xIFnom 800 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 2340 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 700 A
Tstg -40 ... 125 °C
Visol AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=400A
VGE =15V
chiplevel
Tj=25°C 1.45 1.85 V
Tj=150°C 1.70 2.10 V
VCE0 Tj=25°C 0.9 1 V
Tj=150°C 0.85 0.9 V
rCE VGE =15V Tj=25°C 1.4 2.1 m
Tj=150°C 2.1 3.0 m
VGE(th) VGE=VCE, IC= 6.4 mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 600 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 24.64 nF
Coes f=1MHz 1.54 nF
Cres f=1MHz 0.73 nF
QGVGE = - 8 V...+ 15 V 3200 nC
RGint Tj=25°C 0.5
td(on) VCC = 300 V
IC=400A
RG on =3
RG off =5
di/dton = 5900 A/µs
di/dtoff =6000A/µs
Tj=150°C 180 ns
trTj=150°C 80 ns
Eon Tj=150°C 8mJ
td(off) Tj=150°C 950 ns
tfTj=150°C 50 ns
Eoff Tj=150°C 25 mJ
Rth(j-s) per IGBT 0.135 K/W
SKiM406GD066HD
2 Rev. 4 – 15.07.2011 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF= 400 A
VGE =0V
chip
Tj=25°C 1.5 1.8 V
Tj=150°C 1.6 1.8 V
VF0 Tj=25°C 0.9 1 1.1 V
Tj=150°C 0.75 0.85 0.95 V
rFTj=25°C 1.0 1.3 1.7 m
Tj=150°C 1.5 1.8 2.2 m
IRRM IF= 400 A
di/dtoff =5900A/µs
VGE =-15V
VCC = 300 V
Tj=150°C 350 A
Qrr Tj=150°C 49 µC
Err Tj=150°C 12 mJ
Rth(j-s) per diode 0.243 K/W
Module
LCE 913nH
RCC'+EE' terminal-chip Ts=25°C 0.3 m
Ts=125°C 0.5 m
w761g
Temperature sensor
R100 TSensor = 100 °C (R25 = 5 k)339
B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K]; 4096 K
SKiM® 63
GD
Trench IGBT Modules
SKiM406GD066HD
Features
• IGBT 3 Trench Gate Technology
• Solderless sinter technology
•V
CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
SKiM406GD066HD
© by SEMIKRON Rev. 4 – 15.07.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SKiM406GD066HD
4 Rev. 4 – 15.07.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
SKiM406GD066HD
© by SEMIKRON Rev. 4 – 15.07.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SKIM 63
GD
