© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 3 1Publication Order Number:
BC307/D
BC307B, BC307C
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO −45 Vdc
Collector − Base Voltage VCBO −50 Vdc
Emitter − Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−100 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD350
2.8 mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD1.0
8.0 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance,
Junction−to−Case RqJC 125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
BC307B TO−92 5000 Units / Box
BC307BRL1 TO−92 2000 / Tape & Ree
l
COLLECTOR
1
2
BASE
3
EMITTER
BC307BZL1 TO−92 2000 / Ammo Box
BC307C TO−92 5000 Units / Box
http://onsemi.com
3
2
1
TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
BC30
7x
AYWW G
G
BC307x = Device Code
x = B or C
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BC307BG TO−92
(Pb−Free) 5000 Units / Box
BC307BRL1G TO−92
(Pb−Free) 2000 / Tape & Ree
l
BC307BZL1G TO−92
(Pb−Free) 2000 / Ammo Box
BC307CG TO−92
(Pb−Free) 5000 Units / Box
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC307B, BC307C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0) V(BR)CEO −45 Vdc
EmitterBase Breakdown Voltage
(IE = −100 mAdc, IC = 0) V(BR)EBO −5.0 Vdc
Collector−Emitter Leakage Current
(VCES = −50 V, VBE = 0)
(VCES = −50 V, VBE = 0) TA = 125°C
ICES
−0.2
−0.2 −15
−4.0 nAdc
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc) BC307B
BC307C
(IC = −2.0 mAdc, VCE = −5.0 Vdc) BC307
BC307B
BC307C
(IC = −100 mAdc, VCE = −5.0 Vdc) BC307B
BC307C
hFE
120
200
420
150
270
290
500
180
300
800
460
800
CollectorEmitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
−0.10
−0.30
−0.25
−0.3
−0.6
Vdc
BaseEmitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
−0.7
−1.0
Vdc
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) −0.55 −0.62 −0.7 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) fT 280 MHz
Common Base Capacitance
(VCB = −10 Vdc, IC = 0, f = 1.0 MHz) Ccbo 6.0 pF
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz)
NF
2.0 10
dB
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.
BC307B, BC307C
http://onsemi.com
3
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
0.2
0.3
0.5
0.7
−200−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = −10 V
TA = 25°C
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
−0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
−0.4
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
TA = 25°C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
VCE = −10 V
TA = 25°C
−0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = −10 V
f = 1.0 kHz
TA = 25°C
−0.1 −0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10
VCE = −10 V
f = 1.0 kHz
TA = 25°C
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT ADMITTANCE (OHMS)
ob
150
BC307B, BC307C
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 29−11
ISSUE AL NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC307/D
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