BC307B, BC307C Amplifier Transistors PNP Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 Vdc Collector - Base Voltage VCBO -50 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 1.0 8.0 W mW/C -55 to +150 C 2 BASE 3 EMITTER MARKING DIAGRAM 1 2 TO-92 CASE 29 STYLE 17 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BC307x = Device Code x = B or C A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 357 C/W Thermal Resistance, Junction-to-Case RqJC 125 C/W (Note: Microdot may be in either location) ORDERING INFORMATION Device BC307B BC307BG BC307BRL1 BC307BRL1G BC307BZL1 BC307BZL1G BC307C BC307CG *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 September, 2005 - Rev. 3 1 BC30 7x AYWW G G Package Shipping TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 2000 / Ammo Box TO-92 (Pb-Free) 2000 / Ammo Box TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC307/D BC307B, BC307C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 - - -5.0 - - - - -0.2 -0.2 -15 -4.0 BC307B BC307C - - 150 270 - - (IC = -2.0 mAdc, VCE = -5.0 Vdc) BC307 BC307B BC307C 120 200 420 - 290 500 800 460 800 (IC = -100 mAdc, VCE = -5.0 Vdc) BC307B BC307C - - 180 300 - - - - - -0.10 -0.30 -0.25 -0.3 -0.6 - - - -0.7 -1.0 - - -0.55 -0.62 -0.7 - 280 - - - 6.0 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)EBO Collector-Emitter Leakage Current (VCES = -50 V, VBE = 0) (VCES = -50 V, VBE = 0) TA = 125C Vdc Vdc ICES nAdc mA ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -5.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT Common Base Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Ccbo Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) MHz NF dB - 2.0 1. IC = -10 mAdc on the constant base current characteristic, which yields the point IC = -11 mAdc, VCE = -1.0 V. http://onsemi.com 2 pF 10 BC307B, BC307C TYPICAL CHARACTERISTICS -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. "Saturation" and "On" Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 VCE = -10 V TA = 25C 150 100 80 60 5.0 TA = 25C 3.0 Cob 2.0 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current-Gain -- Bandwidth Product 0.3 r b , BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob , OUTPUT ADMITTANCE (OHMS) TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 150 140 130 120 110 100 -0.1 -10 VCE = -10 V f = 1.0 kHz TA = 25C Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 BC307B, BC307C PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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