BD158 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for power output stages for television, radio, phonograph and other

consumer product applications.

•Suitable for Transformerless, Line–Operated Equipment

•Thermopad

{

Construction Provides High Power Dissipation Rating for High

Reliability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

BD 157

ÎÎÎÎ

BD 158

ÎÎÎ

BD 159

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

250

ÎÎÎÎ

300

ÎÎÎ

350

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

275

ÎÎÎÎ

325

ÎÎÎ

375

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.5

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.25

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎ

Type

ÎÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 1.0 mAdc, IB = 0)

ÎÎÎÎ

BVCEO

ÎÎÎÎÎ

BD 157

BD 158

BD 159

ÎÎÎÎÎ

250

300

350

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(At rated voltage)

ÎÎÎÎ

ICBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎÎ

240

ÎÎÎÎ

—



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD157/D

 Motorola, Inc. 1995







0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250–300–350 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

  

2 Motorola Bipolar Power Transistor Device Data

5.0 0 20 40 60 80 100 120 140 160

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

1.0

Figure 2. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.8

0.6

0.4

0.2

020 30 50 100 200 300 500

VBE @ VCE = 10 V

VCE(sat) @ IC/IB = 10 TJ = +25

VBE @ IC/IB = 10

IC/IB = 5.0

V, VOLTAGE (VOLTS)

1.0

Figure 3. DC Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.01 20 30 50 100 300200

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

0.03

0.02

IC, COLLECTOR CURRENT (AMPS)

TJ = 150

Cdc

500

s10

1.0 ms

BD157

BD158

BD159

The Safe Operating Area Curves indicate IC – VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the ap-

plicable Safe Area to avoid causing a catastrophic failure. To

insure operation below, the maximum TJ, power–tempera-

ture derating must be observed for both steady state and

pulse power conditions.

Figure 4. Current Gain

IC, COLLECTOR CURRENT (mAdc)

10 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500

300

200

TJ = 150

hFE, DC CURRENT GAIN

100 + 100

+ 25

– 55

7.0 70

VCE = 10 V

VCE = 2.0 V

  

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

  

4 Motorola Bipolar Power Transistor Device Data

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BD157/D

*BD157/D*

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