BUZ 71 L Not for new design SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 71 L 50 V 14 A 0.1 TO-220 AB C67078-S1326-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 C Values Unit A 14 IDpuls Pulsed drain current TC = 25 C 56 Avalanche current,limited by Tjmax IAR 14 Avalanche energy,periodic limited by Tjmax EAR 1 Avalanche energy, single pulse EAS mJ ID = 14 A, VDD = 25 V, RGS = 25 L = 30.6 H, Tj = 25 C 6 Gate source voltage VGS 14 Gate-source peak voltage,aperiodic Vgs 20 Power dissipation Ptot TC = 25 C W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 71 L Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 50 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS A VDS = 50 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 5 V, ID = 7 A Semiconductor Group nA - 2 0.08 0.1 07/96 BUZ 71 L Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 7 A Input capacitance 5 pF - 510 680 - 210 320 - 85 130 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 9.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time - 15 25 - 70 100 - 70 90 - 50 70 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 71 L Not for new design Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed - - 56 V 1.3 1.8 trr ns - 120 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 14 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 28 A Reverse recovery time - ISM TC = 25 C Inverse diode forward voltage A C - 4 0.15 - 07/96 BUZ 71 L Not for new design Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 45 15 A W Ptot ID 35 12 11 30 10 9 25 8 7 20 6 15 5 4 10 3 2 5 1 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 TC C 160 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 t = 21.0s p = ID 10 1 K/W /ID A VD 100 s S ZthJC ) on S( RD 10 0 1 ms 10 ms 10 -1 D = 0.50 0.20 10 0 0.10 DC 0.05 10 -2 0.02 0.01 single pulse 10 -1 0 10 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 71 L Not for new design Typ. output characteristics ID = (VDS) parameter: tp = 80 s 32 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.32 Ptot = 40W l kj ih g f ID a A VGS [V] a 2.5 24 e 20 d 16 12 c 8 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b c d RDS (on) 0.24 0.20 0.16 0.12 e 0.08 k f g i hj b 0.04 VGS [V] = 4 a 2.5 3.0 a 0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 0.00 0.0 1.0 2.0 3.0 4.0 V 5.5 0 4 8 12 16 20 VDS A Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max parameter: tp = 80 s, VDS2 x ID x RDS(on)max 50 16 A ID 26 ID S 40 gfs 12 35 10 30 25 8 20 6 15 4 10 2 5 0 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0 5 10 15 20 25 A ID 07/96 35 BUZ 71 L Not for new design Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 7 A, VGS = 5 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 0.32 4.6 V 4.0 RDS (on) 0.24 VGS(th) 3.6 3.2 0.20 2.8 2.4 0.16 98% 98% 2.0 typ 1.6 typ 0.12 2% 1.2 0.08 0.8 0.04 0.4 0.00 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A C IF 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 71 L Not for new design Avalanche energy EAS = (Tj ) parameter: ID = 14 A, VDD = 25 V RGS = 25 , L = 30.6 H Typ. gate charge VGS = (QGate) parameter: ID puls = 21 A 6.5 16 mJ V 5.5 EAS VGS 5.0 12 4.5 10 4.0 3.5 0,2 VDS max 8 0,8 VDS max 3.0 2.5 6 2.0 4 1.5 1.0 2 0.5 0.0 20 0 40 60 80 100 120 C 160 Tj 0 4 8 12 16 20 24 28 nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 60 V V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 71 L Not for new design Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96