Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1186
–150
–150
–5
–10
–2
100(Ta=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
External Dimensions MT-100(TO3P)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1186
–100max
–100max
–150min
50min∗
–2.0max
60typ
110typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–150V
VEB=–5V
IC=–25mA
VCE=–4V, IC=–3A
IC=–5A, IB=–0.5A
VCE=–12V, IE=1A
VCB=–80V, f=1MHz
VCC
(V)
–60
RL
(Ω)
12
IC
(A)
–5
VB2
(V)
5
IB2
(mA)
500
ton
(
µ
s)
0.25typ
tstg
(
µ
s)
0.8typ
tf
(
µ
s)
0.2typ
IB1
(mA)
–500
15.6±0.4
9.6
19.9±0.3
4.0 2.0
5.0±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
Pc–Ta Derating
0
0
–2
–4
–6
–8
–10
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–400mA
I
B
=–20mA
–200mA
–160mA
–120mA
–100mA
–80mA
–60mA
–40mA
0
–3
–2
–1
0 –0.5 –1.0 –2.0–1.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–10A
–5A
–0.02 –0.1 –1 –10
20
50
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Safe Operating Area (Single Pulse)
–2 –10 –100 –200
–0.2
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
10ms
DC
Without Heatsink
Natural Cooling
fT–IE Characteristics
(Typical)
0.02 0.1 1 10
0
20
40
60
80
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
0.2
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
100
50
3.5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
–10
–2
–6
–4
–8
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5–0.5 –5 –10
30
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
–30˚C
25˚C
(Ta=25°C) (Ta=25°C)
∗hFE Rank O(50to100), P(70to140), Y(90to180)
LAPT 2SA1186
11