©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004
SS8050
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Ratings Units
V
CBO
Collector-Base V oltage 40 V
V
CEO
Collector-Emitter Voltage 25 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 1.5 A
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=2mA, I
B
=0 25 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=100µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current V
CB
=35V, I
E
=0 100 nA
I
EBO
Emitter Cut-off Current V
EB
=6V, I
C
=0 100 nA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
45
85
40 300
V
CE (sat)
Collector-Emitter Saturation Voltage I
C
=800mA, I
B
=80mA 0.5 V
V
BE (sat)
Base-Emitter Satu ration Voltage I
C
=800mA, I
B
=80mA 1.2 V
V
BE (on)
Base-Emitter On Voltage V
CE
=1V, I
C
=10mA 1 V
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 9.0 pF
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=50mA 100 MHz
Classification B C D
h
FE2
85 ~ 160 120 ~ 200 160 ~ 300
SS8050
2W Output Amplifier of Portable Radios in
Class B P u sh-pull Oper ation.
• Complimentary to SS8550
• Collector Current: I
C
=1.5A
• Collector Power Dissipation: P
C
=2W (T
C
=25°C)
1. Emitter 2. Base 3. Collector
TO-92
1
©2004 Fairchild Semiconductor Corporation
SS8050
Rev. B2, August 2004
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 0.4 0.8 1.2 1.6 2.0
0.1
0.2
0.3
0.4
0.5
I
B
= 3.0mA
I
B
= 2.5mA
I
B
= 2.0mA
I
B
= 1.5mA
I
B
= 1.0mA
I
B
= 0.5mA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR -EMITTER VOLTAGE
0.1 1 10 100 1000
1
10
100
1000
V
CE
= 1V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.1 1 10 100 1000
10
100
1000
10000
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0.1
1
10
100
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
110100
1
10
100
1000
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
1 10 100 400
1
10
100
1000
V
CE
= 10V
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
SS8050
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, August 2004
©2004 Fairchild Semiconductor Corporation
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when properly used in accordance with instructions for use
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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Rev. I11
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