STW5NB100 (R) N - CHANNEL 1000V - 4 - 4.3A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW5NB100 V DSS R DS(on) ID 1000 V < 4.4 4.3 A TYPICAL RDS(on) = 4 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 1000 V Drain- gate Voltage (R GS = 20 k) 1000 V 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 4.3 A ID Drain Current (continuous) at T c = 100 o C 2.7 A Drain Current (pulsed) 17 A Total Dissipation at T c = 25 C 160 W Derating Factor 1.28 W/ o C 4 V/ns I DM (*) P tot dv/dt (1) T stg Tj o Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (*) Pulse width limited by safe operating area June 1998 -65 to 150 o C 150 o C (1) ISD 4 , di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX 1/5 STW5NB100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl o 0.78 62.5 0.5 300 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) 4.3 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) 373 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 1000 VGS = 0 Unit V T c = 125 V GS = 30 V 1 50 A A 100 nA ON () Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 A R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 2 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 4 4.4 4.3 A DYNAMIC Symbol g fs () C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 2 A V GS = 0 Min. Typ. 1.5 3 1400 117 7 Max. Unit S 1800 152 10 pF pF pF STW5NB100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 500 V R G = 4.7 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V ID = 4 A V GS = 10 V Min. ID = 2 A V GS = 10 V Typ. Max. Unit 20 9 28 13 ns ns 32 12 11 45 nC nC nC Typ. Max. Unit 15 12 20 21 17 28 ns ns ns Typ. Max. Unit 4.3 17 A A SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 800 V R G = 4.7 Min. ID = 4 A V GS = 10 V SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4.3 A I SD = 4 A V DD = 100 V V GS = 0 di/dt = 100 A/s o T j = 150 C 1.6 V 750 ns 5.4 C 14.5 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STW5NB100 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/5 STW5NB100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 5/5