STW5NB100
N - CHANNEL 1000V - 4Ω - 4.3A - TO-247
PowerMESH MOSFET
PRELIMINARY DATA
■TYPICAL RDS(on) = 4 Ω
■EX TRE M E LY HIG H dv/ dt CAP A BI LIT Y
■± 30V GA T E TO SOURCE V OLTA G E RATING
■100% AVALANCHE TESTED
■LOW INTRINSIC CAPACITANCE
■GATE CHARGE MINIMIZED
■REDUCED V OLTA GE SPRE AD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching charac teris tic s.
APPLICATIONS
■HIGH CURRE NT , HIG H SP EED SW IT CHING
■SWITCH MODE POWER SUPPLY (SMPS)
■DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
PO W ER SU PP LY AND MO TOR DRIVE
®
INT E R NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 1000 V
VDGR Drain- gate Voltage (RGS = 20 kΩ)1000 V
VGS Gate-source Voltage ± 30 V
IDDrain Current (continuous) at Tc = 25 oC 4.3 A
IDDrain Current (continuous) at Tc = 100 oC 2.7 A
IDM(•) Drain Current (pulsed) 17 A
Ptot Total Dissipation at Tc = 25 oC 160 W
Derating Factor 1.28 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns
Tstg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
(•) Pulse width limited by s afe operating area ( 1) ISD ≤ 4 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
TYPE VDSS RDS(on) ID
STW5NB100 1000 V < 4.4 Ω4.3 A
June 1998
TO-247
123
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALAN CHE CHARACT ERI STICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 4.3 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V) 373 mJ
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 250 µA VGS = 0 1000 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating Tc = 125
oC
1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 30 V ± 100 nA
ON (∗)
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS = VGS ID = 250 µA345V
R
DS(on) Static Drain-source On
Resistance VGS = 10 V ID = 2 A 4 4.4 Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V 4.3 A
DYNAMIC
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance VDS > ID(on) x RDS(on)max ID = 2 A 1.5 3 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0 1400
117
7
1800
152
10
pF
pF
pF
STW5NB100
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ELE CT RICAL CHAR ACT ERISTI CS (continued)
SWI TCHING ON
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD = 500 V ID = 2 A
RG = 4.7 Ω VGS = 10 V 20
928
13 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Cha rge
VDD = 800 V ID = 4 A VGS = 10 V 32
12
11
45 nC
nC
nC
SWI TCHING OF F
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 800 V ID = 4 A
RG = 4.7 Ω VGS = 10 V 15
12
20
21
17
28
ns
ns
ns
SOUR CE DRAI N DIO DE
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
4.3
17 A
A
VSD (∗) Forward On Voltage ISD = 4.3 A VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 15 0 oC750
5.4
14.5
ns
µC
A
(∗) Pulsed: P ulse duration = 300 µs, duty cy cle 1.5 %
(•) Pulse width limit e d by safe operating are a
STW5NB100
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.413 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
Dia 3.55 3.65 0.140 0.144
P025P
TO-247 MECHANICAL DATA
STW5NB100
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STW5NB100
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