2001. 1. 10 1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP33C
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
·Complementary to TIP34C.
·Recommended for 45W～50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25℃)
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
PPT
M
J
Q
123
A 15.9 MAX
MILLIMETERSDIM
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F 1.0
G 3.3 MAX
H9.0
I4.5
J2.0
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
QΦ3.2 0.2
T 0.6+0.3/-0.1
2.8M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 6V
Collector Current IC10 A
Base Current IB3A
Collector Power Dissipation
(Tc=25℃)PC80 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 --10
μA
Emitter Cut-off Current IEBO VEB=6V, IC=0 --10
μA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=25mA, IB=0 100 - - V
DC Current Gain hFE (Note) VCE=4V, IC=2A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.4A - - 1.0 V
Transition Frequency fTVCE=12V, IC=0.5A - 20 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 150 - pF
Note : hFE Classification R:55~110, O:80~160
2001. 1. 10 2/2
TIP33C
Revision No : 1
