MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: * * * * Guardring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 http://onsemi.com Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B2045 1 2, 4 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 135C) IF(AV) 20 A Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM 20 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) See Figure 11 IRRM Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature TJ -65 to +150 C dv/dt 1000 V/s Voltage Rate of Change (Rated VR) 1 2 3 TO-220AB CASE 221A PLASTIC MARKING DIAGRAM 1.0 A YY WW B2045 AKA YY WW B2045 AKA = Year = Work Week = Device Code = Diode Polarity ORDERING INFORMATION Device MBR2045CT Package Shipping TO-220 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 1 1 Publication Order Number: MBR2045CT/D MBR2045CT THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.0 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 10 Amps, TC = 125C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR Volts 0.57 0.72 0.84 mA 15 0.1 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MBR2045CT 100 100 TJ = 150C 70 100C 30 30 20 20 10 7.0 5.0 3.0 2.0 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.4 0.6 0.8 1.0 0.1 1.4 1.2 0.6 0.8 1.0 1.4 1.2 Figure 2. Typical Forward Voltage IFSM , PEAK HALF-WAVE CURRENT (AMPS) Figure 1. Maximum Forward Voltage TJ = 150C 125C 100C 1.0 75C 0.1 25C 0.01 0 0.4 vF, INSTANTANEOUS VOLTAGE (VOLTS) 10 0.001 0.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 100 IR , REVERSE CURRENT (mA) 10 0.7 0.2 25C 100C 50 25C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 0.1 TJ = 150C 70 5.0 10 15 20 25 30 35 40 45 50 200 100 70 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability http://onsemi.com 3 70 100 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 40 RATED VOLTAGE APPLIED 35 I 30 I 25 PK (RESISTIVELOAD) AV I 20 (CAPACITIVELOAD) PK 5 I AV 15 10 10 20 SQUARE WAVE dc 5.0 120 110 130 140 150 160 SINE WAVE RESISTIVE LOAD dc SQUARE WAVE I (CAPACITIVELOAD) PK 5 I AV 10 20 8.0 6.0 TJ = 150C 4.0 2.0 0 I 20 PK (RESISTIVELOAD) AV SQUARE WAVE 16 12 dc 8.0 I (CAPACITIVELOAD) PK 20, 10, 5 I 4.0 0 AV 0 40 20 60 80 100 120 140 Figure 6. Current Derating, RJA = 16C/W 16 10 I 24 Figure 5. Current Derating, Infinite Heatsink 18 12 RATED VOLTAGE APPLIED 28 TA, AMBIENT TEMPERATURE (C) 20 14 32 TC, CASE TEMPERATURE (C) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MBR2045CT 0 4.0 8.0 12 16 20 24 28 32 10 160 RATED VOLTAGE APPLIED RJA = 60C/W 8.0 I I 6.0 PK (RESISTIVELOAD) AV SQUARE WAVE 4.0 dc 2.0 0 I (CAPACITIVELOAD) PK 20, 10, 5 I AV 0 20 40 60 80 100 120 140 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (C) Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air 160 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 t1 Ppk TIME DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. TJL = Ppk * RJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where: TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp, etc. 0.03 0.02 0.01 Ppk tp 0.01 0.1 1.0 10 t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 4 100 1000 MBR2045CT 1500 HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. C, CAPACITANCE (pF) 1000 700 500 MAXIMUM 300 TYPICAL 200 150 0.05 0.1 0.5 0.2 1.0 2.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Capacitance +150 V, 10 mAdc 2.0 k VCC 12 V 5.0 12 Vdc D.U.T. 100 2N2222 2.0 s 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 100 CARBON 2N6277 1.0 CARBON 1N5817 Figure 11. Test Circuit for dv/dt and Reverse Surge Current http://onsemi.com 5 + 4.0 F 20 50 MBR2045CT PACKAGE DIMENSIONS TO-220 PLASTIC CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 6 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR2045CT Notes http://onsemi.com 7 MBR2045CT SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. 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