Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1 1Publication Order Number:
MBR2045CT/D
MBR2045CT
Preferred Device
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
•Guardring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•Epoxy Meets UL94, VO at 1/8″
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Shipped 50 units per plastic tube
•Marking: B2045
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 135°C) IF(AV) 20 A
Peak Repetitive Forward Current
per Diode Leg (Rated VR, Square
Wave, 20 kHz, TC = 135°C)
IFRM 20 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge
Current (2.0 s, 1.0 kHz)
See Figure 11
IRRM 1.0 A
Storage Temperature Range Tstg –65 to +175 °C
Operating Junction Temperature TJ–65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/s
Device Package Shipping
ORDERING INFORMATION
MBR2045CT TO–220
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TO–220AB
CASE 221A
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
45 VOLTS
1
3
2, 4
Preferred devices are recommended choices for future use
and best overall value.
2
MARKING DIAGRAM
YY = Year
WW = Work Week
B2045 = Device Code
AKA = Diode Polarity
YY WW
B2045
AKA
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 10 Amps, TC = 125°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF0.57
0.72
0.84
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR15
0.1
mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
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Figure 1. Maximum Forward Voltage
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
5.0 150
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
0.1
0.01
0.001
NUMBER OF CYCLES AT 60 Hz
101.0
200
100
50
30
20
3.010
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
, REVERSE CURRENT (mA)IR
20 3025
100
2.0 100
70
IFSM, PEAK HALF-WAVE CURRENT (AMPS)
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
35 40 5045
TJ = 150°C
Figure 2. Typical Forward Voltage
Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability
7.05.0 3020 7050
TJ = 150°C
125°C
100°C
75°C
25°C
0.2
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
70
5.0
10
3.0
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1.0
0.60.2 0.4 0.8 1.0 1.4
2.0
20
0.1
0.5
0.7
30
7.0
0.3
50
TJ = 150°C
0.2
100°C
25°C100°C
25°C
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(CAPACITIVELOAD)
IPK
IAV
5
110
TC, CASE TEMPERATURE (°C)
20
15
10
5.0
0
TA, AMBIENT TEMPERATURE (°C)
800
32
16
8.0
4.0
0
40120
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
130 140
40
20 160
12
150 160
Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RJA = 16°C/W
60 120100 140
4.00
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
16
10
8.0
4.0
0
TA, AMBIENT TEMPERATURE (°C)
800
10
8.0
4.0
2.0
0
408.0
, AVERAGE FORWARD POWER DISSIPATION (WATTS)PF(AV)
12 2016
20
20 160
6.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
24 3228
Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air
60 120100 140
35
30
25
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
28
20
24
6.0
2.0
18
14
12
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01 0.1 1.0 10 100
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
∆TJL = Ppk • RθJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where:
∆TJL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time,
t1 + tp, etc.
1000
Figure 9. Thermal Response
dc
TJ = 150°C
SINE WAVE
RESISTIVE LOAD
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
5
20
10
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
20
10
IPK
IAV
(RESISTIVELOAD)
(CAPACITIVELOAD)
IPK
IAV
20, 10, 5
RATED VOLTAGE APPLIED
dc
SQUARE
WAVE
IPK
IAV
(RESISTIVELOAD)
dc
SQUARE
WAVE
IPK
IAV
(RESISTIVELOAD)
(CAPACITIVELOAD)
IPK
IAV
20, 10, 5
RATED VOLTAGE APPLIED
RJA = 60°C/W
0.07
0.7
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HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For exam-
ple, relative waveform rectification efficiency is approxi-
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas
perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in
waveform efficiency is not indicative of power loss; it is
simply a result of reverse current flow through the diode c a -
pacitance, which lowers the dc output voltage.
2.0 µs
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 kΩ
+150 V, 10 mAdc
4.0 µF
+
VR, REVERSE VOLTAGE (VOLTS)
0.5
1500
1000
500
300
150
0.10.05 50
700
C, CAPACITANCE (pF)
Figure 10. Capacitance
0.2 2.01.0 5.0
200
MAXIMUM
TYPICAL
10 20
Figure 11. Test Circuit for dv/dt and
Reverse Surge Current
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6
PACKAGE DIMENSIONS
TO–220
PLASTIC
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
MBR2045CT
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7
Notes
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MBR2045CT/D
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