TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 1
October 2008
TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP105/106/107
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP100
: TIP101
: TIP102
60
80
100
V
V
V
VCEO Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
60
80
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 1 A
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 80 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
R1 10 k W@
R 2 0.6 k W@
Equivalent Circuit
B
E
C
R1 R2
TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP100
: TIP101
: TIP102
IC = 30mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current
: TIP100
: TIP101
: TIP102
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
50
50
50
mA
mA
mA
ICBO Collector Cut-off Current
: TIP100
: TIP101
: TIP102
VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 100V, IE = 0
50
50
50
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 3A
VCE = 4V, IC = 8A
1000
200
20000
VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA
IC = 8A, IB = 80mA
2
2.5
V
V
VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 8A 2.8 V
Cob Output Capacitance VCB = 10V, IE = 0, f =
0.1MHz
200 pF
TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
0.8mA
0.9mA
IB = 1mA
700
m
A
600
m
A
500
m
A
400
m
A
IB = 300mA
IB = 200mA
IB = 100mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10 100
100
1k
10k
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1k
10k
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
100
TIP102
TIP101
5ms
100
m
s
1ms
DC
TIP100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington TransistorTIP100/TIP101/TIP102
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP100/TIP101/TIP102 Rev. A1 5
Rev. I31
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