TS914
RAIL TO RAIL
CMOS QUAD OPERATIONAL AMPLIFIER
April 1999
.RAIL TO RAIL INPUT ANDOUTPUT
VOLTAGERANGES
.SINGLE (ORDUAL) SUPPLYOPERATION
FROM 2.7V TO 16V
.EXTREMELYLOW INPUTBIAS CURRENT :
1pA TYP
.LOW INPUT OFFSET VOLTAGE: 5mVmax.
.SPECIFIEDFOR 600ΩAND 100ΩLOADS
.LOW SUPPLYCURRENT : 200µA/Ampli
.SPICEMACROMODEL INCLUDED IN THIS
SPECIFICATION
Inverting Input 2
Non-inverting Input 2
Non-inverting Input 1
CCV-
CC
V
1
2
3
4
8
5
6
7
9
10
11
12
13
14
+
Output 3
Output 4
Non-inverting Input 4
Inverting Input 4
Non-inverting Input 3
Inverting Input 3
-
+
-
+
-
+
-
+
Output 1
Inverting Input 1
Output 2
PIN CONNECTIONS (top view)
DESCRIPTION
The TS914 is a RAIL TO RAIL quad CMOS opera-
tional amplifier designedto operatewith a singleor
dual supplyvoltage.
The input voltage range Vicm includes the two
supply rails VCC+and VCC-.
The outputreaches :
•VCC-+50mV VCC+-50mV with RL= 10kΩ
•VCC-+350mV VCC+-350mV with RL= 600Ω
This product offers a broad supply voltage operat-
ing range from 2.7V to 16V anda supply current of
only 200µA/amp. (VCC = 3V).
Source and sink output current capability is typi-
cally 40mA (at VCC = 3V), fixed by an internal
limitationcircuit.
STMicroelectronics is offering a dual op-amp with
the samefeatures: TS912.
ORDER CODES
Part Number Temperature Range Package
ND
TS914I/AI -40, +125oC••
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
1/13
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage - (note 1) 18 V
Vid Differential Input Voltage - (note 2) ±18 V
ViInput Voltage- (note 3) -0.3 to 18 V
Iin Current on Inputs ±50 mA
IoCurrent on Outputs ±130 mA
Toper Operating Free Air Temperature RangeI -40 to +125 oC
Tstg Storage Temperature -65 to +150 oC
Notes : 1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differentialvoltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of input and output voltages must never exceed VCC++0.3V.
OPERATING CONDITIONS
Symbol Parameter Value Unit
VCC Supply Voltage 2.7to 16 V
Vicm Common Mode Input VoltageRange VCC--0.2 to VCC++0.2 V
Non-inverting
Input Inverting
Input
Internal
Vref
Output
V
CC
V
CC
SCHEMATIC DIAGRAM (1/4 TS914)
TS914
2/13
ELECTRICAL CHARACTERISTICS
VCC+=3V,V
CC-=0V,RL,CLconnectedto VCC/2, Tamb =25
o
C (unlessotherwise specified)
Symbol Parameter TS914I/AI Unit
Min. Typ. Max.
Vio Input Offset Voltage (Vic =V
o=V
CC/2) TS914
TS914A
Tmin. ≤Tamb ≤Tmax. TS914
TS914A
10
5
12
7
mV
DVio Input Offset Voltage Drift 5 µV/oC
Iio Input Offset Current -(note 1)
Tmin. ≤Tamb ≤Tmax. 1 100
200 pA
Iib Input Bias Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 150
300 pA
ICC Supply Current (per amplifier, AVCL = 1, no load)
Tmin. ≤Tamb ≤Tmax. 200 300
400 µA
CMR Common Mode Rejection Ratio
Vic = 0 to 3V, Vo= 1.5V 70 dB
SVR Supply Voltage Rejection Ratio (VCC+= 2.7 to 3.3V, VO=V
CC /2) 40 70 dB
Avd Large Signal Voltage Gain (RL= 10kΩ,V
O= 1.2V to 1.8V)
Tmin. ≤Tamb ≤Tmax. 3
210 V/mV
VOH High Level Output Voltage (Vid = 1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
2.9
2.3
2.8
2.1
2.96
2.6
2
V
VOL Low Level Output Voltage(Vid = -1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
50
300
900
100
400
150
600
mV
IoOutput Short Circuit Current (Vid =±1V) Source (Vo=V
CC−)
Sink (Vo=V
CC+)40
40 mA
GBP Gain Bandwidth Product
(AVCL = 100, RL= 10kΩ,C
L= 100pF, f = 100kHz) 0.8 MHz
SR+Positive Slew Rate
AVCL =1,R
L= 10kΩ,V
i=1.3Vto 1.7V, CL= 100pF 0.5 V/µs
SR-Negative Slew Rate 0.4 V/µs
∅m Phase Margin 30 Degrees
enEquivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30 nV
√Hz
VO1/VO2 Channel Separation (f = 1kHz) 120 dB
Note 1: Maximum values including unavoidable inaccuracies of the industrial test.
TS914
3/13
ELECTRICAL CHARACTERISTICS
VCC+=5V,V
CC-=0V,RL,CLconnectedto VCC/2, Tamb =25
o
C (unlessotherwise specified)
Symbol Parameter TS914I/AI Unit
Min. Typ. Max.
Vio Input Offset Voltage (Vic =V
o=V
CC/2) TS914
TS914A
Tmin. ≤Tamb ≤Tmax. TS914
TS914A
10
5
12
7
mV
DVio Input Offset Voltage Drift 5 µV/oC
Iio Input Offset Current -(note 1)
Tmin. ≤Tamb ≤Tmax. 1 100
200 pA
Iib Input Bias Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 150
300 pA
ICC Supply Current (per amplifier, AVCL = 1, no load)
Tmin. ≤Tamb ≤Tmax. 230 350
450 µA
CMR Common Mode Rejection Ratio
Vic = 1.5 to 3.5V, Vo= 2.5V 50 75 dB
SVR Supply Voltage Rejection Ratio (VCC+= 3 to 5V, VO=V
CC /2) 50 80 dB
Avd Large Signal Voltage Gain (RL= 10kΩ,V
O= 1.5V to 3.5V)
Tmin. ≤Tamb ≤Tmax. 10
730 V/mV
VOH High Level Output Voltage (Vid = 1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
4.90
4.25
4.8
4.1
4.95
4.65
3.7
V
VOL Low Level Output Voltage(Vid = -1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
50
350
1400
100
500
150
750
mV
IoOutput Short Circuit Current (Vid =±1V) Source (Vo=V
CC−)
Sink (Vo=V
CC+)45
45 60
60 mA
GBP Gain Bandwidth Product
(AVCL = 100, RL= 10kΩ,C
L= 100pF, f = 100kHz) 0.9 MHz
SR+Positive Slew Rate
AVCL =1,R
L= 10kΩ,V
i=1Vto 4V, CL= 100pF 0.8 V/µs
SR-Negative Slew Rate 0.5 V/µs
∅m Phase Margin 30 Degrees
Note 1: Maximum values including unavoidable inaccuracies of the industrial test.
TS914
4/13
ELECTRICALCHARACTERISTICS
VCC+=10V,VCC-=0V,R
L
,CLconnected toVCC/2, Tamb =25
o
C (unless otherwise specified)
Symbol Parameter TS914I/AI Unit
Min. Typ. Max.
Vio InputOffset Voltage (Vic =V
o=V
CC/2) TS914
TS914A
Tmin. ≤Tamb ≤Tmax. TS914
TS914A
10
5
12
7
mV
DVio InputOffset Voltage Drift 5 µV/oC
Iio Input Offset Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 100
200 pA
Iib Input Bias Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 150
300 pA
ICC SupplyCurrent (per amplifier, AVCL = 1, no load)
Tmin. ≤Tamb ≤Tmax. 400 600
700 µA
CMR Common Mode Rejection Ratio Vic = 3 to 7V, Vo=5V
V
ic = 0 to 10V, Vo=5V 50 75
70 dB
SVR SupplyVoltage RejectionRatio (VCC+= 5 to 10V, VO=V
CC /2) 50 80 dB
Avd LargeSignal Voltage Gain (RL= 10kΩ,V
O= 2.5Vto 7.5V)
Tmin. ≤Tamb ≤Tmax. 20
15 60 V/mV
VOH High Level Output Voltage (Vid = 1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
9.85
9.2
9.8
9
9.95
9.35
7.8
V
VOL Low Level Output Voltage (Vid = -1V) RL= 10kΩ
RL= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL= 10kΩ
RL= 600Ω
50
650
2300
150
800
150
900
mV
IoOutput Short Circuit Current (Vid =±1V) Source (Vo=V
CC−)
Sink (Vo=V
CC+)45
45 60
60 mA
GBP Gain Bandwidth Product
(AVCL = 100, RL= 10kΩ,C
L= 100pF, f = 100kHz) 1.3 MHz
SR+Positive Slew Rate
AVCL =1,R
L= 10kΩ,V
i= 2.5V to 7.5V, CL= 100pF 1.3 V/µs
SR-NegativeSlew Rate 0.8 V/µs
∅m Phase Margin 40 Degrees
enEquivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30 nV
√Hz
THD TotalHarmonic Distortion
(AVCL =1,R
L= 10kΩ,C
L= 100pF, VO= 4.75V to 5.25V, f = 1kHz) 0.024 %
Cin InputCapacitance 1.5 pF
VO1/VO2 Channel Separation (f = 1kHz) 120 dB
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS914
5/13
TYPICALCHARACTERISTICS
CC
SUPP LY VOLTAGE, V (V)
0481216
T=25
C
A=1
V=V /2
amb
VCL
OCC
CC µ
SUPPLY CURRENT, I (
A)
600
500
400
300
200
100
Figure 1 : SupplyCurrent (each amplifier)
vs Supply Voltage
25 50 75 100 125
INPUT BIAS CURRENT, I (pA)
ib
V = 10V
V=5V
No load
CC
i
100
10
1
amb
TEMPERATURE, T ( C)
Figure 2 : Input Bias Current vs Temperature
1
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
V = +5V
CC
V = +3V
CC
030507090
OL
OUTPUT CURRENT, I (mA)
2
3
4
5
Figure 4a : Low Level OutputVoltage vs Low
Level Output Current
2
OUTPUT VOLTAGE, V (V)
OL
amb
id
T=25C
V = -100mV
0
V = 10V
CC
V = 16V
CC
OL
OUTPUT CURRENT, I (mA)
4
6
8
10
30 50 70 90
Figure 4b : Low Level OutputVoltage vs Low
Level Output Current
5
-70 -40 -20 0
OUTPUT VOLTAGE, V (V)
OH
amb
id
T=25C
V = 100mV
V = +5V
CC
V=+3V
CC
4
3
2
1
0
OH
OUTPUT CURRENT, I (mA)
Figure 3a : HighLevel OutputVoltage vs High
Level Output Current
4
0
OUTPUT VOLTAGE, V (V)
OH
V = +16V
CC
V = +10V
CC
OH
OUTPUT CURRENT, I (mA)
12
8
20
16
-70 -40 -20 0
amb
id
T=25C
V = 100mV
Figure 3b : High Level OutputVoltage vs High
Level Output Current
TS914
6/13
50
40
30
20
10
0
-10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
1023
10 4
10 5
10 7
10
T=25
C
V = 10V
R = 10k
Ω
C = 100pF
A = 100
amb
CC
L
L
VCL
Figure 5a : Gain and Phasevs Frequecy
50
40
30
20
10
0
-
10
GAIN (dB)
PHASE (Degrees)
0
45
90
135
180
FREQUENCY, f (Hz)
PHASE
GAIN
Phase
Margin
Gain
Bandwidth
Product
6
10
1023
10 4
10 5
10 7
10
T=25 C
V=10V
R = 600Ω
C = 100pF
A = 100
amb
CC
L
L
VCL
Figure 5b : Gain and Phasevs Frequecy
SUPPLY VOLTAGE, V (V)
CC
0481216
1800
GAINBANDW. PROD., GBP (kHz)
T=25
C
R = 10kΩ
C = 100pF
amb
L
L
1400
1000
600
200
Figure 6a : Gain BandwidthProduct vs
SupplyVoltage
SUPPLYVOLTAGE, V (V)
CC
0481216
GAIN BANDW. PROD., GBP (kHz)
T=25
C
R = 600Ω
C = 100pF
amb
L
L
1800
1400
1000
600
200
Figure 6b : Gain bandwidthProduct vs
SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)
T=25
C
R = 10kΩ
C = 100pF
amb
L
L
φ
Figure 7a : Phase Margin vs SupplyVoltage
SUPPLY VOLTAGE, V (V)
CC
0481216
60
50
40
30
20
PHASE MARGIN, m (Degrees)φ
T=25
C
R=600
Ω
C = 100pF
amb
L
L
Figure 7b : Phase Margin vs Supply Voltage
TS914
7/13
150
100
50
010 100 1000 10000
FREQUENCY (Hz)
=10V
=25
CT
amb
V
CC
=100
Ω
R
S
EQUIVALENTINPUT
VOLTAGE NOISE (nV/VHz)
Figure 8 : Input Voltage Noise vs Frequency
TS914
8/13
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS:
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS914_3 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 1.271505E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.125860E-08
DINN 1713 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 1518 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.000000E+00
FCN 5 4VOFN 5.000000E+00
* AMPLIFYINGSTAGE
FIP 5 19 VOFP 2.750000E+02
FIN 5 19 VOFN 2.750000E+02
RG1 19 5 1.916825E+05
RG2 19 4 1.916825E+05
CC 1929 2.200000E-08
HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 150
HONM 21 27 VOUT 3800
VINM 5 27 150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 75
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E8
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = leseuil au dessus de vio
* 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = leseuil au dessous devio
* 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS914I,AI,BI
.RAIL TO RAIL INPUTAND OUTPUT
VOLTAGERANGES
.STANDBY POSITION: REDUCED CON-
SUMPTION (1µA) ANDHIGH IMPEDANCE
OUTPUTS
.SINGLE (ORDUAL) SUPPLYOPERATION
FROM 2.7V TO 16V (±1.35V to ±8V)
.EXTREMELYLOW INPUT BIASCURRENT :
1pA TYP
.LOW INPUT OFFSET VOLTAGE:
1.5mVmax.
.SPECIFIEDFOR 600ΩAND 100ΩLOADS
.LOW SUPPLYCURRENT : 400µA/Ampli
.SPEED : 1.3MHz- 1.3V/µs
MACROMODEL
TS914
9/13
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS:
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
* 6 STANDBY
.SUBCKT TS914_5 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.322092E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.498970E-08
DINN 1713 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 1518 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.750000E+00
FCN 5 4VOFN 5.750000E+00
ISTB0 5 4 500N
* AMPLIFYINGSTAGE
FIP 5 19 VOFP 4.400000E+02
FIN 5 19 VOFN 4.400000E+02
RG1 19 5 4.904961E+05
RG2 19 4 4.904961E+05
CC 1929 2.200000E-08
HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 230
HONM 21 27 VOUT 3800
VINM 5 27 230
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 82
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25
VSCP1 0.8E+08
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69
VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = leseuil au dessus de vio
* 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP1 63 64 0
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = leseuil au dessous devio
* 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS
Applies to : TS914I,AI,BI
TS914
10/13
ELECTRICAL CHARACTERISTICS
VCC+=3V,VCC-=0V,RL,CLconnectedto VCC/2, Tamb =25
o
C
(unlessotherwisespecified)
Symbol Conditions Value Unit
Vio 0mV
A
vd RL= 10kΩ10 V/mV
ICC No load, per operator 100 µA
Vicm -0.2 to 3.2 V
VOH RL= 600Ω2.6 V
VOL RL= 600Ω300 mV
Isink VO=3V 40 mA
I
source VO=0V 40 mA
GBP RL= 10k
Ω,
CL= 100pF, F = 100kHz 0.8 MHz
SR RL= 10k
Ω,
CL= 100pF 0.5 V/µs
∅m 30 Degrees
TS914
11/13
PACKAGE MECHANICAL DATA
14 PINS- PLASTICDIP
Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065
b 0.5 0.020
b1 0.25 0.010
D 20 0.787
E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
i 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
TS914
12/13
PACKAGE MECHANICAL DATA
14 PINS- PLASTICMICROPACKAGE (so)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied.STMicroelectronics products are not authorized foruseas criticalcomponents inlife supportdevicesor systems
without express written approval of STMicroelectronics.
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Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.2 0.004 0.008
a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020
c1 45o(typ.)
D 8.55 8.75 0.336 0.334
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.150 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.020 0.050
M 0.68 0.027
S8
o
(max.)
TS914
13/13
