TLP733,TLP734
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired&PhotoTransistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a phototransistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP734 is nobase internal connection for highEMI environments.
· Collectoremitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365
· SEMKO approved: SS4330784
Certificate no. 9325163, 9522142
· Isolation voltage: 4000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 630, 890 VPK
Highest permissible over voltage: 6000, 8000 VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option (D4)”
7.62 mm pich 10.16 mm pich
standard type TLP×××F type
· Creepage distance : 7.0 mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)
Pin Configurations (top view)
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Base
5
6
4
2
1
3
TLP733
1: Anode
2: Cathode
3: Nc
4: Emitter
5: Collector
6: Nc
5
6
4
2
1
3
TLP734
Unit in mm
TOSHIBA 117A8
Weight: 0.42 g
TLP733,TLP734
2002-09-25
2
Current Transfer Ratio
Current Transfer
Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type
Classi-
fication
*1
Min. Max.
Marking Of Classification
(None) 50 600 Blank, Y, Y, G, G, B, B, GB
50 150 Y, Y
Rank GR 100 300 G, G
200 600 B, B
TLP733
TLP734
Rank GB 100 600 G, G, B, B, GB
*1: Ex. rank GB: TLP733 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP733 (GB): TLP733
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 60 mA
Forward current derating (Ta 39°C) IF / °C -0.7 mA / °C
Peak forward current (100 µs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 55 V
Collector-base voltage (TLP733) VCBO 80 V
Emitter-collector voltage VECO 7 V
Emitter-base voltage (TLP733) VEBO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta 25°C) PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -40~100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta 25°C) PT / °C -2.5 mW / °C
Isolation voltage (AC, 1 min., R.H. 60%) BVS 4000 Vrms
TLP733,TLP734
2002-09-25
3
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC 5 24 V
Forward current IF 16 25 mA
Collector current IC 1 10 mA
Operating temperature Topr -25 85 °C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V 10 µA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Collector-emitter
breakdown voltage V(BR)CEO I
C = 0.5 mA 55 V
Emitter-collector
breakdown voltage V(BR)ECO I
E = 0.1 mA 7 V
Collector-base
breakdown voltage (TLP733) V(BR)CBO I
C = 0.1 mA 80 V
Emitter-base
breakdown voltage (TLP733) V(BR)EBO I
E = 0.1 mA 7 V
VCE = 24 V (ambient light
below 1000 x) 0.01
(2)
0.1
(10) µA
Collector dark current ICEO
VCE = 24 V (ambient light
Ta = 85°C below 1000 x) 2
(4)
50
(50) µA
Collector dark current
(TLP733)
ICER VCE = 24 V, Ta = 85°C
RBE = 1M 0.5 10 µA
Collector dark current
(TLP733)
ICBO V
CB = 10 V 0.1 nA
DC forward current gain
(TLP733)
hFE V
CE = 5 V, IC = 0.5 mA 400
Detector
Capacitance collector to
emitter CCE V = 0, f = 1 MHz 10 pF
TLP733,TLP734
2002-09-25
4
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 —
%
Base photo-current IPB I
F = 5 mA, VCB = 5 V 10 %
IC = 2.4 mA, IF = 8 mA 0.4
— 0.2 —
Collector-emitter saturation
voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance (input to output) CS VS = 0, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 1×1012 1014
AC, 1 minute 4000
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time tON — 3 10
Turn-off time tOFF
VCC = 10 V, IC = 2 mA
RL = 100
— 3 10
µs
Turn-on time tON — 3 —
Storage time tS — 40
Turn-off time tOFF
RL = 1.9 k (Fig.1)
RBE = open
VCC = 5 V, IF = 16 mA — 90
µs
Turn-on time tON — 3 —
Storage time tS — 30
Turn-off time tOFF
RL = 1.9 k (Fig.1)
RBE = 220 k (TLP733)
VCC = 5 V, IF = 16 mA — 60
µs
TLP733,TLP734
2002-09-25
5
Fig. 1 Switching time test circuit
tOFF tON
4.5V
VCE
IF
ts
0.5V
VCC
RL
IF
VCE
RBE
TLP733,TLP734
2002-09-25
6
VF / Ta IF
Forward current IF (mA)
Forward voltage temperature coefficient
VF / Ta (mV / °C)
-0.8
0.1
-2.8
50
-2.4
-2.0
-1.6
-1.2
3 10 0.3 1
-0.4
30
Ambient temperature Ta (°C)
IFTa
Allowable forward current
IF (mA)
0 20
40 60 120
60
40
20
100
0
-20
80
80 100
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power dissipation PC
(mW)
0 20 60 100 120
120
80
40
200
0
-20 40 80
160
IFP – VFP
Pulse forward voltage VF (V)
Pulse forward current IFP (mA)
1000
1
0.4
3
10
5
2.0 2.4 1.2 1.6 0.8
30
100
50
300
500
2.8
Pulse width 10 µs
Repetitive
frequency = 100 Hz
Ta = 25°C
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
10
3000
3
300
1000
500
3 100
30
100
50
3 10-1 3 10-2 10-3
Pulse width 100 µs
Ta = 25°C
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
1.0
50
10
5
3
1.2 1.4 1.6 1.8
30
1
0.5
0.3
0.6 0.8
Ta = 25°C
TLP733,TLP734
2002-09-25
7
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
2 4 8 10
30
20
10
50
0
0 6
40
Ta = 25°C
20 mA
15 mA
10 mA
IF = 5 mA
50 mA
30 mA
PC (MAX.)
IC – VCE
Collector-emitter voltage VCE (V)
Collector current IC (mA)
0.2 0.4 0.8 1.2
15
10
5
30
0
0 0.6 1.0
20
25
Ta = 25°C
20 mA
5 mA
10 mA
IF = 2 mA
50 mA
30 mA
40 mA
Forward current IF (mA)
IC – IF
Collector current IC (mA)
3
1
30
0.01
10
0.3
0.03
0.1
1 10 300
0.1 3 30
0.3 100
Ta = 25°C
V
CE = 5 V
V
CE = 0.4 V
SAMPLE A
SAMPLE B
Forward current IF (mA)
IC / IF – IF
Current transfer ratio IC / IF (%)
1 10
100
300
100
50
1000
10
0.1
500
30
3 30
0.3
Ta = 25°C
V
CE = 5 V
V
CE = 0.4 V
SAMPLE A
SAMPLE B
Forward current IF (mA)
TLP733 IC – IF at RBE
Collector current IC (mA)
1 10
100
50
3
100
0.1
0.1
1
30
3 30
0.3
10
0.3
500k
100k
50k
RBE=
Ta = 25°C
VCE = 5 V
Forward current IF (mA)
TLP733 IPB – IF
Base photo current IPB (µA)
1 10
100
300
100
3
1000
0.1
0.1
1
30
3 30
0.3
10
0.3
Ta = 25°C
IF
RBE
VCC
A
IF VCB
A
VCB = 0 V
VCB = 5 V
TLP733,TLP734
2002-09-25
8
ICEO / Ta
Ambient temperature Ta (°C)
Collector dark current ICEO (µA)
101
10-4
0 120 80 100 20 40 60
10-1
10-2
10-3
100
Ambient light
Below = 0 x
VCE = 24 V
10 V
5 V
Ambient temperature Ta (°C)
VCE (sat)Ta
Collector-emitter saturation
voltage VCE (sat) (V)
-20 0 20 40 100
0.16
0.12
0.08
0.24
0.04
-40
0.20
60 80
IF = 5 mA
IC = 1 mA
Load resistance RL (k)
TLP733 Switching Time – RL
SWITCHING TIME (µs)
10 50 300
30
10
5
100
1
1
50
3
30 100
3 5
tOFF
ts
tON
Ta = 25°C
IF = 16 mA
VCC = 5 V
RBE = 220k
IC – Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
100
0.1
-40
3
100
1
0.5
40 60 -20 0 20 80
0.3
10
50
30
5
VCE = 5 V
1 m
A
5 m
A
10 m
A
IF = 25 m
A
0.5 m
A
TLP733,TLP734
2002-09-25
9
Base emitter resistance RBE ()
Switching Time RBE
Switching time (µs)
3M
30
10
5
50
1
100k
3
300k 1M
tON
tOFF
ts
Ta = 25°C
IF = 16 mA
VCC = 5 V
RL = 1.9k
Load resistance RL (k)
Switching Time – RL
Switching time (µs)
10 50
100
30
10
300
3000
1
1
1000
3
30
3 5
100
tOFF
ts
tON
Ta = 25°C
IF = 16 mA
VCC = 5 V
TLP733,TLP734
2002-09-25
10
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE