© 2018 IXYS CORPORATION, All Rights Reserved DS100682C(6/18)
IXFA22N65X2
IXFP22N65X2
IXFH22N65X2
VDSS = 650V
ID25 = 22A
RDS(on)
145m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 650 V
VGS(th) VDS = VGS, ID = 1.5mA 3.5 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 1.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 145 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C22A
IDM TC= 25C, Pulse Width Limited by TJM 44 A
IATC= 25C5A
EAS TC= 25C1J
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25C 390 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalanche Rated
X2-Class HiPerFETTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
G
S
D (Tab)
TO-220 (IXFP)
TO-263 (IXFA)
D (Tab)
S
GD
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA22N65X2 IXFP22N65X2
IXFH22N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 22 A
ISM Repetitive, pulse Width Limited by TJM 88 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 145 ns
QRM 890 nC
IRM 12 A
IF = 11A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 8 14 S
RGi Gate Input Resistance 1.0
Ciss 2190 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1450 pF
Crss 1.3 pF
Co(er) 92 pF
Co(tr) 330 pF
td(on) 30 ns
tr 37 ns
td(off) 42 ns
tf 18 ns
Qg(on) 37 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC
Qgd 14 nC
RthJC 0.32 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA22N65X2 IXFP22N65X2
IXFH22N65X2
Fig. 4. R
DS(on)
Normalized to I
D
= 11A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
VGS = 10V
I
D
= 22A
I
D
= 11A
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BVDSS
VGS(th)
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
4
8
12
16
20
00.511.5 22.533.5
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
9V
6V
7V
8V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
6V
7V
8V
9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
4
8
12
16
20
01234567
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
6V
7V
5V
8V
4V
Fig. 5. R
DS(on)
Normalized to I
D
= 11A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 1020304050
I
D
- Amperes
R
DS(on)
- Normalized
VGS = 10V
TJ
= 125
o
C
TJ
= 25
o
C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA22N65X2 IXFP22N65X2
IXFH22N65X2
Fig. 11. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 11A
I
G
= 10mA
Fig. 12. Capacitance
0.1
1
10
100
1000
10000
100000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 7. Maxing Drain Current vs. Case Temperature
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 8. Input Admittance
0
4
8
12
16
20
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 9. Transconductance
0
4
8
12
16
20
24
0 2 4 6 8 10121416182022
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
0.30.40.50.60.70.80.91.01.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA22N65X2 IXFP22N65X2
IXFH22N65X2
IXYS REF: F_22N65X2(X4-S602) 12-14-15
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
100μs
R
DS(on)
Limit
1ms
10ms
Fig. 13. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
16
18
20
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA22N65X2 IXFP22N65X2
IXFH22N65X2
TO-263 Outline
TO-220 Outline
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
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