SQ2398ES www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET 100 RDS(on) () at VGS = 10 V * AEC-Q101 qualified c 0.300 ID (A) * 100 % Rg and UIS tested 1.67 Configuration * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package SOT-23 SOT-23 (TO-236) D D 3 G 2 S 1 G Top View S N-Channel MOSFET Marking Code: 9E ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C TC = 125 C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range ID V 1.6 0.9 IS 2.5 IDM 6.6 IAS 5 EAS 1.2 PD UNIT 2 0.6 A mJ W TJ, Tstg -55 to +175 C SYMBOL LIMIT UNIT RthJA 130 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b C/W Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 1 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 A 100 - - VGS(th) VDS = VGS, ID = 250 A 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V - - 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ID(on) RDS(on) gfs VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 C - - 150 VGS = 10 V VDS 5 V 5 - - VGS = 10 V ID = 1.5 A - 0.240 0.300 VGS = 10 V ID = 1.5 A, TJ = 125 C - - 0.552 VGS = 10 V ID = 1.5 A, TJ = 175 C - - 0.720 - 3 - - 152 - VDS = 15 V, ID = 1.5 A V nA A A S b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 28 - Reverse Transfer Capacitance Crss - 12 - Total Gate Charge c Qg - 2.3 3.4 - 0.7 - - 1.1 - 2.9 5.8 8.7 - 5 6.9 - 18 24 - 7 9 - 17 23 - - 8 A - 0.8 1.2 V Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c VDS = 50 V, ID = 1.5 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 50 V, f = 1 MHz td(off) VDD = 50 V, RL = 33 ID 1.5 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics pF nC ns b Pulsed Current a ISM Forward Voltage VSD IF = 1.5 A, VGS = 0 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 2 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 6 6 VGS = 10 V thru 7 V 5 VGS = 6 V ID - Drain Current (A) ID - Drain Current (A) 5 4 3 VGS = 5 V 2 4 3 TC = 25 C 2 TC = 125 C 1 1 TC = -55 C VGS = 4 V, 3 V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 Transfer Characteristics 140 1.0 120 C - Capacitance (pF) RDS(on) - On-Resistance () 0.8 0.6 VGS = 6 V 0.4 100 80 Ciss 60 Coss 40 0.2 20 VGS = 10 V Crss 0 0.0 0 1 2 3 4 ID - Drain Current (A) 5 0 6 20 40 60 80 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.5 RDS(on) - On-Resistance (Normalized) ID = 1.5 A VDS = 50 V VGS - Gate-to-Source Voltage (V) 100 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 ID = 1.5 A 2.1 VGS =10 V 1.7 1.3 VGS = 4.5 V 0.9 0.5 -50 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature S15-1777-Rev. A, 30-Jul-15 -25 150 175 Document Number: 67117 3 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix 1.0 0.5 0.8 0.1 VGS(th) Variance (V) RDS(on) - On-Resistance () TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 0.6 TJ = 150 C 0.4 ID = 5 mA -0.3 ID = 250 A -0.7 -1.1 0.2 TJ = 25 C -1.5 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) -50 10 -25 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (C) 125 150 175 0 25 50 75 100 125 TJ - Junction Temperature (C) 150 175 Threshold Voltage 130 10 VDS - Drain-to-Source Voltage (V) 100 IS - Source Current (A) 0 TJ = 150 C 1 0.1 TJ = 25 C 0.01 0.001 ID = 1 mA 125 120 115 110 105 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage S15-1777-Rev. A, 30-Jul-15 1.2 -50 -25 Drain Source Breakdown vs. Junction Temperature Document Number: 67117 4 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 s 1 1 ms 10 ms 0.1 100 ms TC = 25 C Single Pulse 0.01 0.01 BVDSS Limited 1 s, 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 C/W 0.02 3. TJM - TF = PDMZthJF (t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 5 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2398ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67117. S15-1777-Rev. A, 30-Jul-15 Document Number: 67117 6 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3 0.055 0.0374 Ref 0.020 Ref 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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