SQ2398ES
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S15-1777-Rev. A, 30-Jul-15 1Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
Marking Code: 9E
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () at VGS = 10 V 0.300
ID (A) 1.67
Configuration Single
Package SOT-23
D
G
S
N-Channel MOSFET
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current TC = 25 °C ID
1.6
A
TC = 125 °C 0.9
Continuous Source Current (Diode Conduction) IS2.5
Pulsed Drain Current aIDM 6.6
Single Pulse Avalanche Current L = 0.1 mH IAS 5
Single Pulse Avalanche Energy EAS 1.2 mJ
Maximum Power Dissipation aTC = 25 °C PD
2W
TC = 125 °C 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount b RthJA 130 °C/W
Junction-to-Foot (Drain) RthJF 75
SQ2398ES
www.vishay.com Vishay Siliconix
S15-1777-Rev. A, 30-Jul-15 2Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5
Gate-Source Leakage IGSS V
DS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VGS = 0 V VDS = 100 V - - 1
μA VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50
VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150
On-State Drain Current a I
D(on) V
GS = 10 V VDS 5 V 5 - - A
Drain-Source On-State Resistance a R
DS(on)
VGS = 10 V ID = 1.5 A - 0.240 0.300
VGS = 10 V ID = 1.5 A, TJ = 125 °C - - 0.552
VGS = 10 V ID = 1.5 A, TJ = 175 °C - - 0.720
Forward Transconductance b gfs VDS = 15 V, ID = 1.5 A - 3 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V VDS = 50 V, f = 1 MHz
- 152 -
pF Output Capacitance Coss -28-
Reverse Transfer Capacitance Crss -12-
Total Gate Charge c Qg
VGS = 10 V VDS = 50 V, ID = 1.5 A
-2.33.4
nC Gate-Source Charge c Qgs -0.7-
Gate-Drain Charge c Qgd -1.1-
Gate Resistance Rg f = 1 MHz 2.9 5.8 8.7
Turn-On Delay Time c td(on)
VDD = 50 V, RL = 33
ID 1.5 A, VGEN = 10 V, Rg = 1
-56.9
ns
Rise Time c tr -1824
Turn-Off Delay Time c td(off) -79
Fall Time c tf -1723
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a ISM --8A
Forward Voltage VSD IF = 1.5 A, VGS = 0 V - 0.8 1.2 V
SQ2398ES
www.vishay.com Vishay Siliconix
S15-1777-Rev. A, 30-Jul-15 3Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
6
012345
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 10 V thru 7 V
VGS = 6 V
VGS = 5 V
VGS = 4 V, 3 V
0.0
0.2
0.4
0.6
0.8
1.0
0123456
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS = 6 V
VGS = 10 V
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VDS = 50 V
ID = 1.5 A
0
1
2
3
4
5
6
0246810
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= -55 °C
TC= 125 °C
TC= 25 °C
0
20
40
60
80
100
120
140
0 20406080100
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0.5
0.9
1.3
1.7
2.1
2.5
-50-250 255075100125150175
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
ID= 1.5 A
VGS =10 V
VGS = 4.5 V
SQ2398ES
www.vishay.com Vishay Siliconix
S15-1777-Rev. A, 30-Jul-15 4Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
0246810
RDS(on) -On-Resistance (Ω)
VGS -Gate-to-Source Voltage (V)
TJ= 150 °C
TJ= 25 °C
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 25 °C
TJ= 150 °C
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25 0 25 50 75 100 125 150 175
VGS(th) Variance (V)
TJ-Temperature (°C)
ID= 250 μA
ID= 5 mA
105
110
115
120
125
130
-50-250 255075100125150175
VDS-Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 1 mA
SQ2398ES
www.vishay.com Vishay Siliconix
S15-1777-Rev. A, 30-Jul-15 5Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.01 0.1 1 10 100
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
100 ms
Limited by RDS(on)*
1 ms
IDM Limited
TC= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s, 10 s
DC
10-3 10-2 01110-1
10-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05 t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166 °C/W
3. TJM -T
F=P
DMZthJF(t)
t1
t2
4. Surface Mounted
SQ2398ES
www.vishay.com Vishay Siliconix
S15-1777-Rev. A, 30-Jul-15 6Document Number: 67117
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67117.
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Vishay Siliconix
Package Information
Document Number: 71196
09-Jul-01
www.vishay.com
1
SOT-23 (TO-236): 3-LEAD
b
E
E1
1
3
2
Se
e1
D
A2
A
A1C
Seating Plane
0.10 mm
0.004"
CC
L1
L
q
Gauge Plane
Seating Plane
0.25 mm
Dim MILLIMETERS INCHES
Min Max Min Max
A0.89 1.12 0.035 0.044
A10.01 0.10 0.0004 0.004
A20.88 1.02 0.0346 0.040
b0.35 0.50 0.014 0.020
c0.085 0.18 0.0030.007
D2.80 3.04 0.110 0.120
E2.10 2.64 0.0830.104
E11.20 1.40 0.047 0.055
e0.95 BSC 0.0374 Ref
e11.90 BSC 0.0748 Ref
L0.40 0.60 0.016 0.024
L10.64 Ref 0.025 Ref
S0.50 Ref 0.020 Ref
q3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Application Note 826
Vishay Siliconix
Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SOT-23
0.106
(2.692)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
(1.245)
0.029
(0.724)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
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Revision: 01-Jan-2021 1Document Number: 91000
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