IXFN32N100Q3 - Zilog - Datasheet.World

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1000 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C 28 A

IDM TC= 25°C, Pulse Width Limited by TJM 96 A

IATC= 25°C 32A

EAS TC= 25°C2J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns

PDTC= 25°C 780 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60 Hz, RMS, t = 1minute 2500 V~

IISOL ≤ 1mA, t = 1s 3000 V~

MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 1000 V

VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V

IGSS VGS = ±30V, VDS = 0V ±200 nA

IDSS VDS = VDSS, VGS = 0V 50 μA

TJ = 125°C 2 mA

RDS(on) VGS = 10V, ID = 16A, Note 1 320 mΩ

HiperFETTM

Power MOSFET

Q3-Class

IXFN32N100Q3 VDSS = 1000V

ID25 = 28A

RDS(on) ≤≤

≤≤

≤ 320mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤ 300ns

DS100367A(10/12)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Features

zInternational Standard Package

zLow Intrinsic Gate Resistance

zminiBLOC with Aluminum Nitride

Isolation

zLow Package Inductance

zFast Intrinsic Rectifier

zLow RDS(on) and QG

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zDC-DC Converters

zBattery Chargers

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zTemperature and Lighting Controls

miniBLOC

E153432

G

D

S

G = Gate D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

Preliminary Technical Information

IXFN32N100Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 20V, ID = 16A, Note 1 20 32 S

Ciss 10.9 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 745 pF

Crss 67 pF

RGi Gate Input Resistance 0.20 Ω

td(on) 45 ns

tr 15 ns

td(off) 54 ns

tf 12 ns

Qg(on) 195 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A 60 nC

Qgd 78 nC

RthJC 0.16 °C/W

RthCS 0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 32 A

ISM Repetitive, Pulse Width Limited by TJM 128 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 300 ns

QRM 1.2 μC

IRM 12.3 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 16A

RG = 1Ω (External)

IF = 16A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFN32N100Q3

Fi g. 1. Ou tp ut Char act er i stics @ T

J

= 25ºC

0

4

8

12

16

20

24

28

32

01234567891011

V

DS

- Volts

I

D

- Ampere s

V

GS

= 10V

6

V

7

V

8

V

Fi g. 2. Exte n d ed Ou t p u t Ch ar acter isti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

7

V

6

V

8

V

Fi g . 3. Ou tpu t C har acteri sti cs @ T

J

= 125º C

0

4

8

12

16

20

24

28

32

0 5 10 15 20 25

V

DS

- Volts

I

D

- A mperes

6

V

7V

5V

V

GS

= 10V

Fig. 4. R

DS(on)

No r mali z ed to I

D

= 16A Valu e vs.

Junction T emp erature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normali zed

V

GS

= 10V

I

D

= 32A

I

D

= 16A

Fig. 5. R

DS(on)

Normalized to I

D

= 16A Valu e vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0102030405060

I

D

- Amp e res

R

DS(on)

- Normali zed

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maximum D r ai n Cu r r en t vs.

Case Temp er atu re

0

3

6

9

12

15

18

21

24

27

30

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centi grad e

I

D

- Amperes

IXFN32N100Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Adm ittance

0

5

10

15

20

25

30

35

40

45

50

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig . 8. Transcon du ctance

0

10

20

30

40

50

0 5 10 15 20 25 30 35 40 45 50 55 60

I

D

- A mp e re s

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

10

20

30

40

50

60

70

80

90

100

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig . 10. Gate Ch ar g e

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180 200 220

Q

G

- NanoCoulombs

V

GS

- Volt s

V

DS

= 500V

I

D

= 16A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g. 12. F o rwar d -Bi as Safe Operatin g Ar ea

0.1

1

10

100

10 100 1,000 10,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

1ms

R

DS

(on)

Limit

IXFN32N100Q3

Fi g . 13. Maximum Tr an si en t Th er mal I mped an ce

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fi g. 13. M axim um Transi en t T h ermal Impedance

aaaaa

0.3