NSVMMBT3906TT1G - ON SEMICONDUCTOR

August, 2017 − Rev. 3 1Publication Order Number:

MMBT3906TT1/D

MMBT3906TT1

General Purpose

Transistors

PNP Silicon

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT−416/SC−75 package which is

designed for low power surface mount applications.

Features

•NSVM Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −40 Vdc

Collector−Base Voltage VCBO −40 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation,

FR−4 Board (Note 1) @TA = 25°C

Derated above 25°C

PD200

1.6 mW

mW/°C

Thermal Resistance, Junction−to−Ambient

(Note 1) RqJA 600 °C/W

Total Device Dissipation,

FR−4 Board (Note 2) @TA = 25°C

Derated above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance, Junction−to−Ambient

(Note 2) RqJA 400 °C/W

Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 × 1.0 Inch Pad Device Package Shipping†

ORDERING INFORMATION

CASE 463

SOT−416/SC−75

STYLE 1

3000 / Tape &

Reel

MARKING DIAGRAM

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

COLLECTOR

BASE

EMITTER

2A M G

2A = Device Code

M = Date Code*

G= Pb−Free Package

MMBT3906TT1G SOT−416

(Pb−Free)

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

www.onsemi.com

NSVMMBT3906TT1G SOT−416

(Pb−Free) 3000 / Tape &

Reel

MMBT3906TT1

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 −Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0) V(BR)CBO −40 −Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 −Vdc

Base Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc) IBL −−50 nAdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX −−50 nAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE 60

100

−

300

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat) −

−−0.25

−0.4

Vdc

Base−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat) −0.65

−−0.85

−0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT250 − MHz

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF

Input Capacitance1

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10.0 pF

Input Impedance

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hie 2.0 12 k W

Voltage Feedback Ratio

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10−4

Small−Signal Current Gain

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hfe 100 400 −

Output Admittance

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mmhos

Noise Figure

(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF − 4.0 dB

SWITCHING CHARACTERISTICS

Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td− 35 ns

Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr− 35

Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts− 225 ns

Fall Time (IB1 = IB2 = −1.0 mAdc) tf− 75

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBT3906TT1

www.onsemi.com

Figure 1. Normalized Thermal Response

0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000

0.001

0.01

0.1

1.0

r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE

t, TIME (s)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 2. Delay and Rise Time

Equivalent Test Circuit Figure 3. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916 CS < 4 pF*

3 V

275

10 k

CS < 4 pF*

< 1 ns

+10.6 V 300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

MMBT3906TT1

www.onsemi.com

TYPICAL TRANSIENT CHARACTERISTICS

Cibo

Cobo

Figure 4. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 5. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

TJ = 25°C

TJ = 125°C

Figure 6. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

MMBT3906TT1

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TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k

IC = 100 mA

SOURCE RESISTANCE = 2.0 k

IC = 50 mA

Figure 8.

f, FREQUENCY (kHz)

1.0

2.0

3.0

4.0

5.0

0.1

Figure 9.

RS, SOURCE RESISTANCE (kW)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

100

4.0

6.0

8.0

2.0

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

hfe, CURRENT GAIN

Figure 10. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 11. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

Figure 12. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 13. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (X 10 )

h , INPUT IMPEDANCE (k

0.1 0.2 1.0 2.0 5.0 10

0.5

0.1 0.2 1.0 2.0 5.0 10

0.5

7.0

5.0

0.1 0.2 1.0 2.0 5.0 10

0.5

-4

h PARAMETERS

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)

Ω)

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

0.3

0.7

3.0

7.0

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

MMBT3906TT1

www.onsemi.com

STATIC CHARACTERISTICS

Figure 14. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1

100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

-55°C

Figure 15. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

Figure 16. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 17. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

100

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100 200

-1.0

-1.5

-2.0

200

TJ = 25°CVBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V +25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVS FOR VBE(sat)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

SC−75/SOT−416

CASE 463−01

ISSUE G

DATE 07 AUG 2015

SCALE 4:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

XX M

XX = Specific Device Code

M = Date Code

G= Pb−Free Package

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.061 0.063 0.065

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

L0.10 0.15 0.20

1.50 1.60 1.70

0.004 0.006 0.008

0.060 0.063 0.067

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.803

0.071

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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