NPN Silicon
Epitaxial Transistors
Features
• High DC Current Gain: hFE
=600 Max.(VCE
=6.0V, I
C=1.0mA)
• High voltage: VCEO=50V
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current 100 mA
P
CCollector power dissipation 200 mW
TJJunction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0)
--- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
--- --- 0.1 uAdc
ON CHARACTERISTICS
hFDC Current Gain*
(I
C=1.0mAdc, VCE=6.0Vdc) 200 --- 600 ---
VCE(sat) Collector Saturation Voltage*
(I
C=100mAdc, I
B=10mAdc) --- 0.15 0.3 Vdc
VBE(SAT) Base Saturation Voltage*
(I
C=100mAdc,I
B=10mAdc) --- 0.86 1.0 Vdc
VBE Base Emitter Voltage*
(V CE=6.0Vdc, I
C=1.0mAdc) 0.55 0.62 0.65 Vdc
Cob
Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz) --- 3.0 --- pF
fT
Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc) --- 250 --- MHz
hFE CLASSIFICATION
Marking L6 L7
hFE 200-400 400-600
* Pulse Test PW<350us, dut
y
c
y
cle<2%
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
GH
J
.079
2.000 in
c
h
es
mm
.
03
1
.800
.035
.900
.
03
7
.950
.037
.950
K
Revision: 5 2007/06/04
omponents
20736 Marilla Street Chatsworth
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B
C
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x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
2SC1623-L6
2SC1623-L7
products are represented on our website, harmless against all damages.
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***IMPORTANT NOTICE***
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Revision: 5 2007/06/04
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