BDX33CG - ON Semiconductor L.L.C.

October, 2011 − Rev. 13

1Publication Order Number:

BDX33B/D

BDX33B, BDX33C (NPN)

BDX34B, BDX34C (PNP)

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

•High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0

•Collector−Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B

= 100 Vdc (min) − BDX33C, BDX334C

•Low Collector−Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc

− BDX33B, 33C/34B, 34C

•Monolithic Construction with Build−In Base−Emitter Shunt Resistors

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCEO 80

100

Vdc

Collector−Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCB 80

100

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous

− Peak

IC10

15

Adc

Base Current IB0.25 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD70

0.56

W

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150 °C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

TO−220AB

CASE 221A−09

STYLE 11

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MARKING DIAGRAM

BDX3xy = Device Code

x = 3 or 4

y = B or C

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

23

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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2

80

60

40

20

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0) BDX33B/BDX34B

BDX33C/BDX34C

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

80

100

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B

BDX33C/BDX33C

ÎÎÎÎÎ

VCER(sus)

ÎÎÎ

80

100

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B

BDX33C/BDX34C

ÎÎÎÎÎ

VCEX(sus)

ÎÎÎ

80

100

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 1/2 rated VCEO, IB = 0) TC = 25°C

TC = 100°C

ÎÎÎÎÎ

ICEO

ÎÎÎ

−

ÎÎÎÎ

0.5

10

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = rated VCBO, IE = 0) TC = 25°C

TC = 100°C

ÎÎÎÎÎ

ICBO

ÎÎÎ

−

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

10

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 1)

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

ÎÎÎÎÎ

hFE

ÎÎÎ

750

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

−

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage

(IC = 8.0 Adc)

ÎÎÎÎÎ

VF

ÎÎÎ

−

ÎÎÎÎ

4.0

ÎÎÎ

Vdc

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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3

Figure 1. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RqJC(t) = r(t) RqJC

RqJC = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

20

1.0

10

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10

0

70

0.2

dc

5.0 ms

1.0 ms

BDX33B

BDX33C

500 ms

100

ms

TC = 25°C

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0

20

1.0

Figure 2. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

dc

5.0 ms

1.0 ms

BDX34B

BDX34C

500 ms

100

ms

TC = 25°C

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the power handling ability of a

transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate. The data of Figure 3 is based on TJ(pk)

= 150°C; TC is variable depending on conditions. Second

breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) = 150°C. TJ(pk) may be calculated from the

data in Figure 4. At high case temperatures, thermal

limitations will reduce the power that can be handled to values

less than the limitations imposed by second breakdown.

10,000

1.0

Figure 3. Small−Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL-SIGNAL CURRENT GAIN

20

3000

200

500

2000

1000

30

50

300

0.1

Figure 4. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

70

50

TJ = 25°C

Cib

Cob

500.2 0.5

TJ = 25°C

VCE = 4.0 Vdc

IC = 3.0 Adc

PNP

NPN

PNP

NPN

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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4

0.1

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 4.0 V

200 7.0

NPN

BDX33B, 33C

PNP

BDX34B, 34C

20,000

5000

10,000

3000

2000

1000

3.0 5.0 0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

VCE = 4.0 V

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A 6.0 A

1.0 0.7 2010

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 7. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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ORDERING INFORMATION

Device Package Shipping†

BDX33B TO−220

50 Units / Rail

BDX33BG TO−220

(Pb−Free)

BDX33C TO−220

50 Units / Rail

BDX33CG TO−220

(Pb−Free)

BDX34B TO−220

50 Units / Rail

BDX34BG TO−220

(Pb−Free)

BDX34C TO−220

50 Units / Rail

BDX34CG TO−220

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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6

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

−T−

C

S

T

U

R

J

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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BDX33B/D

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