Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.4
IDM Pulsed Drain Current 58
PD @TA = 25°C Power Dissipation 2.5
Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 260 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7413APbF
PD - 95303
VDSS = 30V
RDS(on) = 0.0135Ω
HEXFET® Power MOSFET
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
9/30/04
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
lLead-Free
IRF7413APbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25°C, IS = 6.6A, VGS = 0V
trr Reverse Recovery Time 74 110 ns TJ = 25°C, IF = 7.3A
Qrr Reverse RecoveryCharge 200 300 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
58
3.1
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.034 V/°C Reference to 25°C, ID = 1mA
0.0135 VGS = 10V, ID = 6.6A
0.020 VGS = 4.5V, ID = 3.3A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 10 S VDS = 10V, ID = 3.7A
1.0 VDS = 24V, VGS = 0V
25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -20V
Gate-to-Source Reverse Leakage 100 VGS = 20V
QgTotal Gate Charge 52 79 ID = 7.3A
Qgs Gate-to-Source Charge 6.1 9.2 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge 16 23 VGS = 10 V, See Fig. 6 and 9
td(on) Turn-On Delay Time 8.6 VDD = 15V
trRise Time 50 ID = 7.3A
td(off) Turn-Off Delay Time 52 RG = 6.2Ω
tfFall Time 46 RD = 2.0Ω, See Fig. 10
Ciss Input Capacitance 1800 VGS = 0V
Coss Output Capacitance 680 pF VDS = 25V
Crss Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7413APbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 7.3A
D
IRF7413APbF
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 7.3A
V = 24V
V = 15V
D
DS
DS
1
10
100
0.4 1.2 2.0 2.8 3.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7413APbF
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
IRF7413APbF
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
3.3A
6.0A
7.3A
IRF7413APbF
Fig 13. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413APbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B AS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR IN T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I N E CONF OR MS T O J E DE C OU T L INE MS -01 2AA.
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MIL LIME T ER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES ].
5 DIME NS ION DOES NOT INCL UDE MOL D PR OT RUS IONS .
6 DIME NS ION DOES NOT INCL UDE MOL D PR OT RUS IONS .
MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010].
7 DIME NSION IS T HE LENGTH OF LEAD FOR S OLDERING T O
A S UBS T RAT E .
MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INT ERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF 7101 (MOS FET )
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
IRF7413APbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
