CB-C9C02S-BGA256 - NEC Electronics

NEC Electronics Inc.

CB-C9

3.3-Volt, 0.35-Micron

Cell-Based CMOS ASIC

Description

NEC's CB-C9 CMOS cell-based ASIC family facilitates

the design of complete cell-based silicon systems

composed of user-defined logic, complex macro-

functions such as microprocessors, intelligent

peripherals, analog functions, and compiled memory

blocks.

The CB-C9 cell-based ASIC series employs a 0.35-

micron (0.27-micron effective) silicon gate CMOS

process with silicidation. This advanced process

greatly reduces the number of contacts per cell,

leading to area-efficient library elements optimized on

speed with a 3.3-V power supply. CB-C9 achieves

1.6M usable gates. A library option for 2.5-V power

supply voltage is being developed. For this

technology, the Titanium-Silicide process results in up

to 30% reduced power consumption per cell,

compared to 0.5-micron 3.3-V technologies.

Combining very high integration, super high-speed,

and low power consumption, this technology meets

today's high-performance application demands.

Fully supported by NEC's sophisticated OpenCAD®

design framework, CB-C9 maximizes design quality

and flexibility while minimizing ASIC design time.

June 1996

Figure 1. System-on-Silicon

Preliminary

CB-C9 Family Features

• 0.35-micron (drawn), Ti-Silicide CMOS technology

• 3.3-V operation (2.5-V in development)

• 26 base sizes, each with 2- and 3-metal layer options

• Usable gates from 37K to 1.6M gates

• Level shifter I/O: 3.3-V external to 2.5-V internal

• Three pad ring options for high gate to pad ratio

• PCI buffer, including 66 MHz PCI

• GTL, HSTL, pECL buffer support

•Low power dissipation: 0.7 µW/MHz/gate (3.3-V), 0.5 µW/MHz/gate (2.5-V)

• Extensive macro selection (CPUs, peripherals, analog)

• Datapath compiler for various types of ALU, multiplier, adder

• Memory compiler for various types of memory blocks

• Extensive package support: PQFP, BGA, TBGA, CSP

• Automatic clock skew control by clock tree synthesis

• Popular, third-party CAE tools

Table 1. CB-C9 Family Features and Benefits

CB-C9 Family Benefits

• High-density cell structure

• Super high-speed at low power supply

• Flexible base sizes to best fit design needs

• Super high integration capabilities

• Supports flexible interfacing to different signal voltages

• Minimizes device cost for high I/O requirement

• PCI support compliant with latest PCI specification

• High-speed I/F to memory and processor buses

• Ideally-suited for hand-held applications

• Supports advanced system-on-silicon design

• Speed & area-effective memory modules

• Area-effective memory integration on-chip

• Delivers the latest package requirements

• Minimizes on-chip clock skew

• Smooth design flow from customer design to silicon

A11272EU1V0DS00 OpenCAD is a registered trademark of NEC Electronics Inc.

NEC's OpenCAD system combines popular third-party

design tools with proprietary NEC tools, including

advanced floorplanner and clock tree synthesis tools.

CB-C9

5-V-Tolerant Interface

CB-C9 supports both 3.3-V and 5-V-tolerant signaling.

The 5-V-tolerant buffers enable CB-C9 devices to

communicate to 5-V TTL signal while protecting the

ASIC. If 5-V-tolerant buffers are not required, 3.3-V

buffers may be substituted, thus increasing the die

area available for logic.

Integration and Performance

Gate complexities up to 1.6M usable gates can be

integrated on the largest of 26 die sizes, each routable

with 2- or 3-metal layers. This gives enough flexibility

to optimally fit design needs. Three I/O ring options:

a single I/O pad ring (type S); or two pitches of dual

pad ring (types C and T). For details, please refer to

Table 2.

Figure 2. CB-C9 5-V Interfacing

Table 2. CB-C9 Die Steps

Step I/O Pitch Usable Gates (2LM) Usable Gates (3LM)

Size (C) (T) (S) 3V I/O 3/5V I/O(1) 5V I/O 3V I/O 3/5V I/O(1) 5V I/O

B60C/T/S 196 156 108 49.9 37.1+3.2N 37.1 76.0 56.4+4.9N 56.4

C02C/T/S 236 180 128 64.4 50.0+3.6N 50.0 99.5 77.2+5.6N 77.2

C40C/T/S 268 204 144 82.2 65.8+4.1N 65.8 125.2 100.3+6.2N 100.3

C78C/T/S 300 223 160 99.4 81.5+4.5N 81.5 150.2 123.2+6.8N 123.2

D01C/T/S 316 244 168 109.5 90.9+4.7N 90.9 166.9 138.5+7.1N 138.5

D26C/T/S 336 256 178 123.4 103.5+5.0N 103.5 185.1 155.3+7.4N 155.3

D52C/T/S 356 276 188 139.3 118.2+5.2N 118.2 209.0 177.3+7.9N 177.3

D90C/T/S 388 300 204 159.7 137.3+5.6N 137.3 237.6 204.2+8.3N 204.2

E16C/T/S 408 312 214 176.6 152.9+5.9N 152.9 262.7 227.5+8.8N 227.5

E54C/T/S 444 340 232 198.9 174.1+6.2N 174.1 298.4 261.1+9.3N 261.1

E80C/T/S 464 352 242 218.0 191.9+6.5N 191.9 321.5 283.1+9.6N 283.1

F18C/T/S 500 380 260 240.9 213.8+6.8N 219.8 358.2 317.9+10.1N 317.9

F44C/T/S 516 396 268 261.3 232.4+7.2N 232.4 388.7 345.7+10.7N 345.7

F70C/T/S 540 412 280 282.0 252.6+7.3N 252.6 412.1 369.2+10.7N 369.2

G08C/T/S 568 432 294 306.9 275.9+7.7N 275.9 452.3 406.7+11.4N 406.7

G34C/T/S 596 452 308 328.8 297.4+7.8N 297.4 484.6 438.3+11.6N 438.3

G72C/T/S 624 472 322 364.0 331.0+8.3N 331.0 526.8 479.0+11.9N 479.0

H10C/T/S 656 496 338 390.1 356.3+8.5N 356.3 569.3 520.0+12.3N 520.0

H49C/T/S 692 524 350 426.5 391.1+8.8N 391.1 622.4 570.8+12.9N 570.8

H87C/T/S 720 544 370 466.6 428.7+9.5N 428.7 668.4 614.1+13.6N 614.1

J26C/T/S 752 568 386 492.4 454.9+9.4N 454.9 725.0 669.7+13.8N 669.7

J51C/T/S 772 588 396 620.0 480.5+9.9N 480.5 761.1 694.1+14.3N 694.1

K15C/T/S 824 624 422 591.9 549.6+10.6N 549.6 838.5 778.7+15.0N 778.7

K92C/T/S 892 676 456 660.9 617.9+10.7N 617.9 944.1 882.7+15.3N 882.7

M97C/T/S 1060 804 540 898.3 848.8+12.4N 848.8 1268.2 1198.2+17.5N 1198.2

P63C/T/S 1204 908 612 1102.9 1048.7+13.6N 1048.7 1537.4 1461.8+18.9N 1461.8

(1) N = The number of sides which are composed of only 3V I/F buffers

Device

CB-C9

ASIC

(3V)

Device

CMOS I/F

TTL I/F

3V Interface Block 5V Interface Block

3V CLK

CB-C9

The family offers an extensive library of primitive

macrofunctions characterized for 3.3-V operation (2.5-

V operation in the future). Each of these blocks has

several different drive strengths, allowing the synthesis

tool to select the most suitable block for the required

internal load. This generally reduces the design

overhead without influencing design performance. The

internal gate delay for a two-input NAND gate is 87

picoseconds (ps), (F/O=1, L=0mm, 3.3-V operation)

and under loaded conditions 113 (F/O=2, L=typ, 3.3-V

operation) and 120 ps (F/O=1, L=typ, 2.5-V operation).

To meet today's high-speed demands, high-perform-

ance I/O macros are mandatory. CB-C9 supports

macros such as GTL, pECL, and HSTL for fast, low

power data transfer, PLLs to synchronize on-chip

system clocks, and PCI signaling standards. Also,

CB-C9 offers a variety of macrofunctions to be

incorporated on a single chip. These macrofunctions

include CPU cores, peripheral devices, RAM/ROM,

datapath macros and functions, enabling designers to

perform system-on-silicon. Moreover, level shifters

(connect between 3.3-V external and 2.5-V internal)

are supported to provide low power consumption and

flexible interfacing to different signal voltages making

correspondence.

The range of NEC's proprietary 32-bit RISC CPUs

include V810, V851 which has V810 core and 16-bit

external data bus, and an upgraded high-speed

version of the popular 16-bit CPU V30MX, which

operates at clock speeds of 33 MHz at 3.3-V, and

offers an improved 286-compatible address pipelining

and uses a 24-bit address bus. Other specific cores

can be implemented on request. For details about the

full range of on-chip macrofunctions, refer to Table 3.

Please also refer to Table 4 for compiled RAM

specifications.

Embedded macrofunctions are easy to place, route,

and simulate. Because these macros are derived from

NEC's standard parts, they have fully characterized

parameters and can be tested with standard test

vectors to ensure full functionality and reliability.

NEC's test bus architecture allows complete system

simulation, production testing of the internal circuits of

the macrofunctions, and seamless embedded CPU

core emulation. The CPU may be connected

externally and can be replaced by an in-circuit

emulator (ICE). All this is performed with only two

dedicated test control pins.

CB-C9 Applications

Major advantages of NEC's CB-C9 ASIC family are

high integration density, high speed and very low

power consumption and cost-effective memory and

megamacro integration.

Following these main advantages results in a wide

range of applications. For example, high-performance

transmission and switching systems, based on ATM

technique, may take advantage from high speed, high

integration density and high performance memory

integration. High-end hand-held applications as PDA's

or mobile communication equipment make use of low

power and the capability of global system integration

including powerful microprocessor cores, which results

in small system cases. Future high-end consumer

products such as digital TV set-top boxes need

system-on-silicon integration to allow cost-effective

mass production. High-end chipsets for engineering

workstations (EWS) or graphic PC-subsystems need

very high performance combined with cost-effective

packaging solutions. With it's very low power

consumption, NEC's CB-C9 family enables the usage

of more cost-effective packaging solutions.

Low Power Consumption

NEC's CB-C9 Titanium-Silicide process features

exceptionally low power dissipation to facilitate super

high-speed operation without the need of costly

package options. The process also drastically

increases battery life for hand-held applications. The

new ASIC family dissipates power at 0.7 µW/MHz/gate

(3.3-V) and at 0.5 µW/MHz/gate (2.5-V).

Test Simplification Design

To test the logical circuit of 1.6M gate large-scale

easily, CB-C9 allows use of Scan and Boundary Scan

for logic area, BIST for memory macros, and direct

accessed test bus architecture for core macros.

System on Silicon

NEC offers a wide selection of CPU/MCU cores,

industry-standard intelligent peripheral macros, and

compilable RAM/ROM blocks and datapath macros as

well as analog functions in hard macro form that can be

integrated onto a single CB-C9 chip. Including such

macrofunctions in an ASIC design makes it possible to

achieve a high level of integration, performance, and

system security.

CB-C9

Table 3. CB-C9 Mega Macro Library (In Development)

Comparable

Macro Device Description

CPU NZ70008H Z80™ 8-bit microprocessor

NAV30MX V30HL™ 16-bit microprocessor

NA70732 V810™ 32-bit RISC microprocessor

NAV851R48 V851™ 32-bit RISC microprocessor

ARM™ ARM7TDMI 32-bit RISC microprocessor

DSP SPX DSP

OAK OakDSPCore™ DSP

OAK PineDSPCore™ DSP

MPEG2 MPEG2

AC3 decoder AC3 decoder

Peripheral NA71037L µPD71037 DMA controller

NA71051L µPD71051 USART, 30Kbit/s, full duplex

NA71054L µPD71054 Programmable timer/counter

NA71055L µPD71055 Programmable parallel interface

NA71059L µPD71059 Programmable interrupt controller

NA4993AL µPD4993 8-bit parallel I/O real-time clock

NA72065VL µPD72065B Single- and double-density floppy disk controller

NA16550L NS16550A UART with FIFO

Analog — — 8-bit 30 MHz ADC/DAC

— — 8-bit 220 MHz DAC

— — 8-bit 500 KHz ADC

— — 10-bit 100 KHz ADC

— — 10-bit 30 MHz DAC

— — 90 MHz Analog PLL

— — 150 MHz Analog PLL

— — 250 MHz Analog PLL

— — RAC Rambus™ ASIC cell

Z80 is a trademark of Zilog, Incorporated

V30HL, V810, and V851 are trademarks of NEC Corporation

ARM is a trademark of Advanced RISC Machines

OakDSP Core is a trademark of DSP Group

PineDSP Core is a trademark of DSP Group

Rambus is a trademark of Rambus

Table 4. Compiled RAM Specification

RAM Type 3.3V Supply Voltage 2.5V Supply Voltage Min. Size Max. Size(3)

Tac(1) Pd(2) Tac(1) Pd(2) [bits x words] [bits x words]

[ns] [mW/MHz] [ns] [mW/MHz]

1-port high-speed 3.61 0.50 5.65 0.28 1 x 32 32 x 2048

1-port high-density 6.50 0.36 10.07 0.20 1 x 16 32 x 2048

1-port super high-speed 2.89 0.34(4) — — 1 x 64 16 x 1024

2-port high-speed 3.73 0.97 5.89 0.47 1 x 32 32 x 2048

2-port high-density 7.41 0.50 11.31 0.27 1 x 32 32 x 1024

(1) Max. access time at 8-bits x 512 words from clock to valid data with unloaded outputs

(2) Dynamic power dissipation

(3) Larger block sizes are available by connecting basic hard macros

(4) Additional DC power dissipation of 28 mW during read cycle

CB-C9

CAD Support

The CB-C9 family ASICs are completely supported by

NEC's OpenCAD design environment, a unified front-

to-back-end design package that allows designers to

mix and match tools from the industry's most popular

third-party vendors and from NEC's offering of powerful

proprietary software tools. These tools perform

schematic capture, logic synthesis, floorplanning, logic

and timing simulation layout, design and circuit rule

check, and memory compilation. The company's

proprietary clock tree synthesis tool can be used to

automatically buffer the clock lines as needed to

minimize clock skew, essential for high-speed designs.

The library elements of NEC's CB-C9 family are

modeled in a nonlinear way using table look-up

methods. This allows the most accurate timing

verification throughout synthesis, estimated timing

simulation and sign-off timing simulation as it includes

not only the influence of actual load conditions but also

of the logic-cells input slopes. NEC developed this

delay modeling method to enable a converging design

flow and to minimize design iterations.

Test Support

The CB-C9 family supports automatic test generation

through a scan test methodology, which allows higher

fault coverage, easier testing and faster development

time. This includes internal scan as well as boundary

scan. NEC also offers optional built-in-self-test (BIST)

architecture for RAM testing. Test of embedded

megamacros is supported from NEC's test bus

concept, which allows the use of predefined test

pattern sets, for example, for integrated core macros.

Packaging

NEC offers a wide variety of over 60 package types.

The CB-C9 family can be packaged in NEC's most

popular surface-mount and through-hole packages.

These include plastic quad flat packs (PQFPs) with

optional heat spreader and pin counts in the range

from 100 to 304 pins. Pin grid arrays (PGAs) with 364

or 528 pins and ball grid array (BGA) packages with

256 to 696 ball contacts are also supported. Also

planned for release is the FBGA (CSP). See Figure 3

for package photo.

Figure 3. FBGA photo

Publications

This data sheet contains specifications, package

information, and operational data for the CB-C9 cell-

based family. Additional design information is

available in NEC's

CB-C9 Block Library

and

CB-C9

Design Manual

. Call your local NEC ASIC design

center representative or the NEC literature line for

additional ASIC design information; see the back of

this data sheet for locations and telephone numbers.

CB-C9

Input/Output Capacitance (VDD=VI= 0V; f=1 MHz)

Terminal Symbol Typ Max Unit

Input CIN 10 20 pF

Output COUT 10 20 pF

I/O CI/O 10 20 pF

(1) Values include package pin capacitance

Absolute Maximum Ratings

Power supply voltage, VDD –0.5 to +4.6V

I/O voltage, VI

3V input buffer (at VI < VDD +0.5V) –0.5 to +4.6V

3.3V fail-safe input buffer (at VI < VDD +0.5V) –0.5 to +4.6V

5V-tolerant buffer (at VI < VDD +3.0V) –0.5 to +6.6V

Output voltage, VO

3V buffer (at VO < VDD +0.5V) –0.5 to +4.6V

5V-tolerant buffer (at VO < VDD +3.0V) –0.5 to +6.6V

Latch-up current, ILATCH >1 A (typ)

Operating temperature, TOPT –40 to +85°C

Storage temperature, TSTG –65 to +150°C

Power Consumption

Description Limits Unit

Internal cell (@ 3.3V supply voltage) 0.7 µW/MHz

Input block (FI01) 3.76 µW/MHz

Output block (FO02 @ 15 pF) 278 µW/MHz

(1) Assumes 30% internal gate switching at one time

Caution: Exposure to absolute maximum ratings for extended periods may affect

device reliability; exceeding the ratings could cause permanent damage. The device

should not be operated outside the recommended operating conditions.

Caution: Exposure to absolute maximum ratings for extended periods may affect

device reliability; exceeding the ratings could cause permanent damage. The device

should not be operated outside the recommended operating conditions.

Recommended Operating Conditions (VDD = 3.3V ± 0.3V; TJ = 0°C to +125°C)

3.3V Buffer 5V-Tolerant 3.3V PCI

Parameter Symbol Min Max Min Max Min Max Unit

I/O power supply voltage VDD 3.0 3.6 3.0 3.6 3.0 3.6 V

Junction temperature TJ–0 +125 –0 +125 –0 +125 °C

High-level input voltage VIH 2.0 VDD 2.0 VDD 0.5 VDD VDD+0.5 V

Low-level input voltage VIL 0 0.8 0 0.8 –0.5 0.3 VDD V

Input rise/fall time tR, tF0 200 0 200 0 200 ns

Input rise/fall time, Schmitt tR, tF0 10 0 10 0 200 ms

AC Characteristics (VDD = 3.3V ± 0.3V; TJ = 0°C to +125°C)

Parameter Symbol Min Typ Max Unit Conditions

Toggle frequency fTOG 670 MHz D-F/F; F/O = 1 mm

Delay time

2-input NAND (F322) tPD 87 ps F/O = 1; L = 0 mm

tPD 113 ps F/O = 2; L = typ

Flip-flop (F611) tPD 488 ps F/O = 1; L = 0 mm

tPD 514 ps F/O = 2; L = typ

tSETUP 520 ps —

tHOLD 200 ps —

Input buffer (FI01) tPD 157 ps F/O = 1; L = 0 mm

tPD 170 ps F/O = 2; L = typ

Output buffer (12 mA) 3.3V tPD 675 ps CL = 0 pF

Output buffer (12 mA) 3.3V tPD 2375 ps CL = 50 pF

Output buffer (6 mA) 5V-tolerant tPD 1400 ps CL = 0 pF

Output buffer (6 mA) 5V-tolerant tPD 3650 ps CL = 50 pF

Output rise time (9 mA) tR2.3 ns CL = 15 pF; 10-90%

Output fall time (9 mA) tF1.8 ns CL = 15 pF; 10-90%

CB-C9

DC Characteristics (VDD = 3.3V ± 0.3V; TJ = 0°C to +125°C)

Parameters Symbol Conditions MIN. TYP. MAX. Unit

Quiescent current

H49 - P63 IDDS VI = VDD or GND 40 TBD µA

F18 - H10 IDDS VI = VDD or GND 20 TBD µA

B60 - E80 IDDS VI = VDD or GND 10 TBD µA

Off-state output leakage current

3.3V output IOZ VO = VDD or GND ±10 µA

5V-tolerant IOZ VO = VDD or GND ±10 µA

Output sink current with pull-up (VO = 3.3V) IRVPU = 5.5 V, RPU = 2ký TBD µA

Output sink short circuit current IOS VO = G ND –250 mA

Input leakage current

Regular IIVI = VDD or GND ±10–4 ±10 µA

With pull-up resistor (50 kΩ)I

= GND –36 –89 –165 µA

With pull-up resistor (5 kΩ)I

= GND –284 –654 –1305 mA

With pull-down resistor (50 kΩ)I

= VDD 28 79 141 µA

Pull-up resisor

With pull-up resistor (50 kΩ)R

PU 21.8 37.1 83.1 kΩ

With pull-up resistor (5 kΩ)R

PU 2.8 5.0 10.6 kΩ

With pull-down resistor (50 kΩ)R

PD 25.6 41.9 105.8 kΩ

Low-level output current

3V buffers

3 mA IOL VOL = 0.4V 3 mA

6 mA IOL VOL = 0.4V 6 mA

9 mA IOL VOL = 0.4V 9 mA

12 mA IOL VOL = 0.4V 12 mA

18 mA IOL VOL = 0.4V 18 mA

24 mA IOL VOL = 0.4V 24 mA

5V-tolerant buffers

1 mA IOL VOL = 0.4V 1 mA

2 mA IOL VOL = 0.4V 2 mA

3 mA IOL VOL = 0.4V 3 mA

6 mA IOL VOL = 0.4V 6 mA

9 mA IOL VOL = 0.4V 9 mA

12 mA IOL VOL = 0.4V 12 mA

Low-level output voltage

3V buffers VOL IOL = 0 mA 0.1 V

5V-tolerant buffers VOL IOL = 0 mA 0.1 V

High-level output voltage

3V buffers VOH IOH = 0 mA VDD – 0.1 V

5V-tolerant buffers VOH IOH = 0 mA VDD – 0.2 V

CB-C9

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or FAX your request to: 1-800-729-9288

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