TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 6-BIT, 1-of-2 MULTIPLEXER/DEMULTIPLEXER WITH INTEGRATED IEC L-4 ESD AND 1.8-V LOGIC COMPATIBLE CONTROL INPUTS FEATURES 1 * * * * * * * RTW PACKAGE (TOP VIEW) N.C. NC1 NC2 IN1 NC3 NC6 1.65-V to 3.6-V Single-Supply Operation Isolation in Powerdown Mode, V+ = 0 Low Capacitance Switches, 21.5 pF (Typical) Bandwidth up to 240 MHz for High-Speed Rail-to-Rail Signal Handling Crosstalk and Off Isolation of -62dB 1.8-V Logic Threshold Compatibility for Control Inputs 3.6-V Tolerant Control Inputs Latch-Up Performance Exceeds 100-mA Per JESD 78, Class II ESD Performance Tested Per JESD 22 - 2500-V Human-Body Model (A114-B, Class II) - 1500-V Charged-Device Model (C101) ESD Performance: NC/NO Ports - 6-kV Contact Discharge (IEC 61000-4-2) 24-QFN (4 x 4 mm), 24-BGA (3 x 3 mm) and 24-TSSOP (7.9 x 6.6 mm) Packages 24 23 22 21 20 19 COM1 GND COM2 COM3 V+ COM4 18 2 17 3 16 4 15 5 14 6 13 7 8 NC4 EN NC5 NO5 NO4 NO6 9 10 11 12 PW PACKAGE (TOP VIEW) NC2 NC1 N.C. COM1 GND COM2 COM3 V+ APPLICATIONS * * * 1 COM5 NO1 COM6 NO2 IN2 NO3 * * * * SD/SDIO and MMC Two Port MUX PC VGA Video MUX/Video Systems Audio and Video Signal Routing COM4 COM5 NO1 COM6 1 24 2 23 3 22 4 21 5 20 6 19 7 18 8 17 9 16 10 15 11 14 12 13 IN1 NC3 NC6 NC4 EN NC5 NO5 NO4 NO6 NO3 IN2 NO2 N.C. - Not internally connected ZQS PACKAGE (TOP VIEW) ZQS PIN ASSIGNMENTS 1 2 3 4 5 A COM1 NC2 N.C. NC3 NC6 A B COM2 NC1 IN1 NC4 B C COM3 V+ GND EN NC5 C D COM4 COM6 IN2 NO5 NO4 D E COM5 NO1 NO2 NO3 NO6 1 2 3 4 5 E 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2009, Texas Instruments Incorporated TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com DESCRIPTION/ORDERING INFORMATION The TS3A27518E is a 6-bit 1-of-2 Mux/Demux designed to operate from 1.65 V to 3.6 V. This device can handle both digital and analog signals, and signals up to V+ can be transmitted in either direction. The TS3A27518E has two control pins, each controlling three 1-of-2 muxes at the same time, and an enable pin that is used to put all outputs in high-impedance mode. The control pins are compatible with 1.8V logic thresholds and are backward compatible with 2.5 V and 3.3 V logic thresholds as well. The TS3A27518E allows any SD, SDIO, and multimedia card host controllers to be expanded out to multiple cards or peripherals since the SDIO interface consists of 6-bits: CMD, CLK, and Data[0:3] signals. The TS3A27518E has two control pins that give additional flexibility to the user. For example, the ability to mux two different audio-video signals in equipment such as an LCD television,an LCD monitor, or a notebook docking station. ORDERING INFORMATION TA PACKAGE -40C to 85C (1) (2) (1) (2) ORDERABLE PART NUMBER TOP-SIDE MARKING BGA - ZQS Tape and reel TS3A27518EZQSR YL518E QFN - RTW Tape and reel TS3A27518ERTWR YL518E TSSOP - PW Tape and reel TS3A27518EPWR YL518E Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. LOGIC DIAGRAM SUMMARY OF CHARACTERISTICS V+ = 3.3 V, TA = 25C VCC IN1 1-of-2 Multiplexer/Demultiplexer Configuration Logic EN IN2 Number of channels NC1 6 ON-state resistance (ron) 6.2 (max) ON-state resistance match (ron) 0.7 (max) ON-state resistance flatness (rON(flat)) 2.1 (max) NO1 NC4 Turn-on/turn-off time (tON/tOFF) 59 ns/ 60.6 ns (max) COM1 NO4 Break-before-make time (tBBM) 22.7 ns (max) COM4 Charge injection (QC) 0.81 pC Bandwidth (BW) 240 MHz NC2 NO2 NC5 COM2 NO5 OFF isolation (OISO) -62 dB at 10 MHz COM5 Crosstalk (XTALK) -62 dB at 10 MHz Total harmonic distortion (THD) NC3 NO3 NC6 COM3 NO6 Power-supply current (I+) 24-pin QFN (RTW), 24-BGA (ZQS) 24-TSSOP (PW) Package options COM6 0.05% < 0.3 A (max) GND FUNCTION TABLE 2 EN IN1 IN2 NC1/2/3 TO COM1/2/3, COM1/2/3 TO NC1/2/3 NC4/5/6 TO COM4/5/6, COM4/5/6 TO NC4/5/6 NO1/2/3 TO COM1/2/3, COM1/2/3 TO NO1/2/3 NO4/5/6 TO COM4/5/6, COM4/5/6 TO NO4/5/6 H X X OFF OFF OFF OFF L L L ON ON OFF OFF L H L OFF ON ON OFF L L H ON OFF OFF ON L H H OFF OFF ON ON Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 SDIO EXPANDER APPLICATION BLOCK DIAGRAM VCC VCC VCC NC1 COM1 NO1 NC2 COM2 NO2 NC3 COM3 NO3 SD/MMC Memory Card NC4 SDIO Port COM4 NO4 NC5 COM5 NO5 NC6 COM6 NO6 Digital Baseband or Apps Processor IN1, IN2, EN VCC TS3A27518 SDIO Peripheral (Bluetooth, WLAN, DTV, etc) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 3 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1) (2) over operating free-air temperature range (unless otherwise noted) MIN MAX V+ Supply voltage range (3) -0.5 4.6 V VNC VNO VCOM Analog voltage range (3) (4) (5) -0.5 4.6 V IK Analog port diode current (6) V+ < VNC, VNO, VCOM < 0 -50 INC INO ICOM ON-state switch current (7) VNC, VNO, VCOM = 0 to V+ -50 50 mA VI Digital input voltage range (3) (4) -0.5 4.6 V IIK Digital input clamp current (3) (4) I+ Continuous current through V+ IGND Continuous current through GND Tstg Storage temperature range (1) (2) (3) (4) (5) (6) (7) VIO < VI < 0 UNIT mA -50 mA 100 mA -100 mA -65 150 C Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum All voltages are with respect to ground, unless otherwise specified. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. This value is limited to 5.5 V maximum. Requires clamp diodes on analog port to V+. Pulse at 1-ms duration <10% duty cycle THERMAL IMPEDANCE RATINGS UNIT PW package JA (1) Package thermal impedance (1) 87.9 RTW package 66 ZQS package 171.6 C/W The package thermal impedance is calculated in accordance with JESD 51-7. ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1) V+ = 3 V to 3.6 V, TA = -40C to 85C (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analog signal range ON-state resistance VCOM, VNO, VNC ron ON-state resistance match between channels ON-state resistance flatness ron ron(flat) INC(OFF), INO(OFF) NC, NO OFF leakage current INC(PWROFF), INO(PWROFF) (1) 4 0 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 15 VNC or VNO = 2.1 V, ICOM = -32 mA, Switch ON, See Figure 15 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 16 VNC or VNO = 1 V, VCOM = 3 V, or VNC or VNO = 3 V, VCOM = 1 V, 25C Full 0.3 0.95 3V Full VNC or VNO = 0 to 3.6 V, VCOM = 3.6 V to 0, or VNC or VNO = 3.6 V to 0, VCOM = 0 to 3.6 V, 3.6 V 25C Full -7 -1 0V 0.05 2.1 2.3 -0.5 0.7 0.8 25C Full 6.2 7.6 3V 25C Switch OFF, See Figure 16 4.4 3V 25C Full V+ 0.5 7 0.05 -12 1 A 12 The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued) V+ = 3 V to 3.6 V, TA = -40C to 85C (unless otherwise noted) PARAMETER SYMBOL ICOM(OFF) COM OFF leakage current ICOM(PWROFF) NC, NO ON leakage current COM ON leakage current TEST CONDITIONS VNC or VNO = 3 V, VCOM = 1 V, or VNC or VNO = 1 V, VCOM = 3 V, TA V+ 25C Full VNC or VNO = 3.6 V to 0, VCOM = 0 to 3.6 V, or VNC or VNO = 0 to 3.6 V, VCOM = 3.6 V to 0, Switch OFF, See Figure 16 25C Full INO(ON), INC(ON) VNC or VNO = 1 V, VCOM = Open, or VNC or VNO = 3 V, VCOM = Open, Switch ON, See Figure 17 ICOM(ON) VNC or VNO = Open, VCOM = 1 V, or VNC or VNO = Open, VCOM = 3 V, Switch ON, See Figure 17 3.6 V 0V MAX 0.01 1 -2 3.6 V 3.6 V 0.02 1 A 1 0.04 -7 -2 UNIT 2 -12 -2.5 25C Full TYP -1 -1 25C Full MIN 2.2 7 0.03 -7 A 2 7 A Digital Control Inputs (IN1, IN2, EN) (2) Input logic high VIH Full 3.6 V 1.2 3.6 V Input logic low VIL Full 3.6 V 0 0.65 V Input leakage current 25C 0.05 0.1 A IIH, IIL VI = V+ or 0 Turn-on time tON VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 25C 3.3 V Full 3 V to 3.6 V Turn-off time tOFF VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 25C 3.3 V Full 3 V to 3.6 V Break-beforemake time tBBM VNC = VNO = V+/2, RL = 50 , CL = 35 pF, See Figure 20 25C 3.3 V Full 3 V to 3.6 V Charge injection QC VGEN = 0, RGEN = 0, CL = 0.1 nF, See Figure 24 25C 3.3 V 0.81 pC NC, NO OFF capacitance CNC(OFF), CNO(OFF) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 25C 3.3 V 13 pF COM OFF capacitance CCOM(OFF) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 3.3 V 8.5 pF NC, NO ON capacitance CNC(ON), CNO(ON) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 25C 3.3 V 21.5 pF COM ON capacitance CCOM(ON) VCOM = V+ or GND, Switch ON, See Figure 18 25C 3.3 V 21.5 pF VI = V+ or GND See Figure 18 25C 3.3 V 2 pF Full 3.6 V -0.1 -2.5 2.5 Dynamic Digital input capacitance CI 18.1 59 60 25.4 60.6 61 4 11.1 22.7 28 ns ns ns Bandwidth BW RL = 50 , Switch ON, See Figure 20 25C 3.3 V 240 MHz OFF isolation OISO RL = 50 , f = 10 MHz, Switch OFF, See Figure 22 25C 3.3 V -62 dB Crosstalk XTALK RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 3.3 V -62 dB XTALK(ADJ) RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 3.3 V -71 dB THD RL = 600 , CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 25 25C 3.3 V 0.05 % VI = V+ or GND, Switch ON or OFF Crosstalk adjacent Total harmonic distortion Supply Positive supply current (2) I+ 25C Full 3.6 V 0.04 0.3 3 A All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 5 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1) V+ = 2.3 V to 2.7 V, TA = -40C to 85C (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analog signal range ON-state resistance VCOM, VNO, VNC ron ON-state resistance match between channels ON-state resistance flatness ron ron(flat) INC(OFF), INO(OFF) NC, NO OFF leakage current INC(PWROFF), INO(PWROFF) ICOM(OFF) COM OFF leakage current ICOM(PWROFF) NC, NO ON leakage current COM ON leakage current 0 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 15 VNC or VNO = 1.6 V, ICOM = -32 mA, Switch ON, See Figure 15 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 16 VNC or VNO = 0.5 V, VCOM = 2.3 V, or VNC or VNO = 2.3 V, VCOM = 0.5 V, VNC or VNO = 0 to 2.7 V, VCOM =2.7 V to 0, or VNC or VNO = 2.7 V to 0, VCOM = 0 to 2.7 V, VNC or VNO = 0.5 V, VCOM = 2.3 V, or VNC or VNO = 2.3 V, VCOM = 0.5 V, VNC or VNO = 2.7 V to 0, VCOM = 0 to 2.7 V, or VNC or VNO = 0 to 2.7 V, VCOM = 2.7 V to 0, 25C Full 0.3 0.91 2.3 V Full 2.7 V 25C Full 25C Full Switch OFF, See Figure 16 INO(ON), INC(ON) VNC or VNO = 0.5 V or 2.3 V, VCOM = Open, Switch ON, See Figure 17 ICOM(ON) VNC or VNO = Open, VCOM = 0.5 V, or VNC or VNO = Open, VCOM = 2.3 V, Switch ON, See Figure 17 2.7 V 0V 25C Full 25C Full 2.7 V 0.02 0.3 0.6 A 0.7 1 0.02 0.7 A 7.2 0.03 -6 -2 10 -7.2 -2.1 2.7 V 0.02 -1 -0.7 6 -10 -0.7 25C Full -6 -0.6 0V 0.04 2.2 2.3 -0.3 0.8 0.9 25C Full 9.6 11.5 2.3 V 25C Switch OFF, See Figure 16 5.5 2.3 V 25C Full V+ 2.1 6 0.02 -5.7 A 2 5.7 A Digital Control Inputs (IN1, IN2, EN) (2) Input logic high VIH Input logic low VIL Input leakage current VI = V+ or GND Full 2.7 V 1.15 3.6 V Full 2.7 V 0 0.55 V 25C 0.01 0.1 A IIH, IIL VI = V+ or 0 Turn-on time tON VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 25C 2.5 V Full 2.3 V to 2.7 V Turn-off time tOFF VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 25C 2.5 V Full 2.3 V to 2.7 V Break-beforemake time tBBM VNC = VNO = V+/2, RL = 50 , CL = 35 pF, See Figure 20 25C 2.5 V Full 2.3 V to 2.7 V Charge injection QC VGEN = 0, RGEN = 0, CL = 0.1 nF, See Figure 24 25C 2.5 V 0.47 pC NC, NO OFF capacitance CNC(OFF), CNO(OFF) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 25C 2.5 V 13.5 pF COM OFF capacitance CCOM(OFF) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 2.5 V 9 pF Full 2.7 V -0.1 -2.1 2.1 Dynamic (1) (2) 6 17.2 36.8 42.5 17.1 29.8 34.4 4.5 13 30 33.3 ns ns ns The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued) V+ = 2.3 V to 2.7 V, TA = -40C to 85C (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TA V+ See Figure 18 25C 2.5 V 22 pF VCOM = V+ or GND, Switch ON, See Figure 18 25C 2.5 V 22 pF VI = V+ or GND See Figure 18 25C 2.5 V 2 pF NC, NO ON capacitance CNC(ON), CNO(ON) VNC or VNO = V+ or GND, Switch OFF, COM ON capacitance CCOM(ON) Digital input capacitance CI MIN TYP MAX UNIT Bandwidth BW RL = 50 , Switch ON, See Figure 20 25C 2.5 V 240 MHz OFF isolation OISO RL = 50 , f = 10 MHz, Switch OFF, See Figure 22 25C 2.5 V -62 dB Crosstalk XTALK RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 2.5 V -62 dB XTALK(ADJ) RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 2.5 V -71 dB THD RL = 600 , CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 25 25C 2.5 V 0.06 % VI = V+ or GND, Switch ON or OFF Crosstalk adjacent Total harmonic distortion Supply Positive supply current I+ 25C Full 0.01 2.7 V 0.1 2 A ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1) V+ = 1.65 V to 1.95 V, TA = -40C to 85C (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT Analog Switch Analog signal range ON-state resistance ON-state resistance match between channels ON-state resistance flatness VCOM, VNO, VNC 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 15 VNC or VNO = 1.5 V, ICOM = -32 mA, Switch ON, See Figure 15 ron(flat) 0 (VNC or VNO) V+, ICOM = -32 mA, Switch ON, See Figure 16 INC(OFF), INO(OFF) VNC or VNO = 0.3 V, VCOM = 1.65 V, or VNC or VNO = 1.65 V, VCOM = 0.3 V ron ron NC, NO OFF leakage current INC(PWROFF), INO(PWROFF) ICOM(OFF), ICOM(OFF) COM OFF leakage current ICOM(PWROFF), ICOM(PWROFF) NC, NO ON leakage current (1) 0 INO(ON), INC(ON) VNC or VNO = 1.95 V to 0, VCOM = 0 to 1.95 V, or VNC or VNO = 0 to 1.95 V, VCOM = 1.95 V to 0, VNC or VNO = 0.3 V, VCOM = 1.65 V, or VNC or VNO = 1.65 V, VCOM = 0.3 V VNC or VNO = 1.95 V to 0, VCOM = 0 to 1.95 V, or VNC or VNO = 0 to 1.95 V, VCOM = 1.95 V to 0, VNC or VNO = 0.3 V, VCOM = Open, or VNC or VNO = 1.65 V, VCOM = Open, 25C Full Full 0.3 1.65 V 2.7 1.65 V 1.95 V 25C Full 25C Full 25C Full 0V Full 0.9 0.02 A A 0.4 5 0.02 -5.2 A 0.4 -5 -2 1.95 V 0.02 0.4 7.2 -0.9 -0.4 25C Switch ON, See Figure 17 -7.2 -0.4 1.95 V 5 0.01 0.25 -5 -0.4 0V 0.03 5.5 7.3 -0.25 1 1.2 25C Full 14.4 16.3 25C Full Switch OFF, See Figure 16 7.1 1.65 V 25C Switch OFF, See Figure 16 V+ A 2 5.2 A The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 7 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued) V+ = 1.65 V to 1.95 V, TA = -40C to 85C (unless otherwise noted) PARAMETER COM ON leakage current SYMBOL ICOM(ON) TEST CONDITIONS VNC or VNO = Open, VCOM = 0.3 V, or VNC or VNO = Open, VCOM = 1.65 V, TA V+ 25C Switch ON, See Figure 17 Full 1.95 V MIN TYP MAX -2 0.02 2 -5.2 5.2 UNIT A Digital Control Inputs (IN1, IN2, EN) (2) Input logic high VIH Input logic low VIL Input leakage current VI = V+ or GND Full 1.95 V 1 3.6 V Full 1.95 V 0 0.4 V 25C IIH, IIL VI = V+ or 0 Turn-on time tON VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 Turn-off time tOFF VCOM = V+, RL = 50 , CL = 35 pF, See Figure 19 Break-beforemake time tBBM VNC = VNO = V+/2, RL = 50 , CL = 35 pF, See Figure 20 Charge injection QC VGEN = 0, RGEN = 0, NC, NO OFF capacitance CNC(OFF), CNO(OFF) NC, NO ON capacitance COM ON capacitance Full 1.95 V -0.1 0.01 -2.1 0.1 2.1 A Dynamic Digital input capacitance 25C 1.8 V Full 1.65 V to 1.95 V 25C 1.8 V Full 1.65 V to 1.95 V 14.1 49.3 56.7 16.1 26.5 31.2 18.4 ns 25C 1.8 V Full 1.65 V to 1.95 V CL = 1 nF, See Figure 24 25C 1.8 V 0.21 pC VNC or VNO = V+ or GND, Switch OFF, See Figure 18 25C 1.8 V 9 pF CNC(ON), CNO(ON) VNC or VNO = V+ or GND, Switch OFF, See Figure 18 25C 1.8 V 22 pF CCOM(ON) VCOM = V+ or GND, Switch ON, See Figure 18 25C 1.8 V 22 pF VI = V+ or GND See Figure 18 25C 1.8 V 2 pF CI 5.3 ns 58 58 ns Bandwidth BW RL = 50 , Switch ON, See Figure 20 25C 1.8 V 240 MHz OFF isolation OISO RL = 50 , f = 10 MHz, Switch OFF, See Figure 22 25C 1.8 V -60 dB Crosstalk XTALK RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 1.8 V -60 dB XTALK(ADJ) RL = 50 , f = 10 MHz, Switch ON, See Figure 23 25C 1.8 V -71 dB THD RL = 600 , CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 25 25C 1.8 V 0.1 % VI = V+ or GND, Switch ON or OFF Crosstalk adjacent Total harmonic distortion Supply Positive supply current (2) 8 I+ 25C Full 1.95 V 0.01 0.1 1.5 A All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 PARAMETER DESCRIPTION SYMBOL VCOM DESCRIPTION Voltage at COM VNC Voltage at NC VNO Voltage at NO ron ron ron(flat) Resistance between COM and NC or NO ports when the channel is ON Difference of ron between channels in a specific device Difference between the maximum and minimum value of ron in a channel over the specified range of conditions INC(OFF) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state INC(ON) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) open INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open ICOM(OFF) Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF state ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and the output (NC or NO) open VIH Minimum input voltage for logic high for the control input (IN, EN) VIL Maximum input voltage for logic low for the control input (IN, EN) VI Voltage at the control input (IN, EN) IIH, IIL Leakage current measured at the control input (IN, EN) tON Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output NC or NO) signal when the switch is turning ON. tOFF Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF. QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL x VCOM, CL is the load capacitance and VCOM is the change in analog output voltage. CNC(OFF) Capacitance at the NC port when the corresponding channel (NC to COM) is OFF CNC(ON) Capacitance at the NC port when the corresponding channel (NC to COM) is ON CNO(OFF) Capacitance at the NC port when the corresponding channel (NO to COM) is OFF CNO(ON) Capacitance at the NC port when the corresponding channel (NO to COM) is ON CCOM(OFF) Capacitance at the COM port when the corresponding channel (COM to NC) is OFF CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NC) is ON CI Capacitance of control input (IN, EN) OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NC to COM) in the OFF state. XTALK Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). Adjacent crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2) .This is measured in a specific frequency and in dB. BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is -3 dB below the DC gain. THD Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic. I+ Static power-supply current with the control (IN) pin at V+ or GND Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 9 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com TYPICAL CHARACTERISTICS 8 7 7 ON-State Resistance, rON (W) ON-State Resistance, rON (W) 6 5 4 3 2 6 5 4 3 85C 2 85C 1 25C 25C 1 --40C -40C 0 0 0.0 0.5 1.0 1.5 2.0 COM Voltage, VCOM (V) 2.5 3.0 0.0 3.5 Figure 1. ON-State Resistance vs COM Voltage (V+ = 3 V) 0.5 1.0 1.5 COM Voltage, VCOM (V) 2.0 2.5 Figure 2. ON-State Resistance vs COM Voltage (V+ = 2.3 V) 12 600 550 500 Leakage Current, II (nA) ON-State Resistance, rON (W) 10 8 6 4 85C COM (OFF) 450 COM (ON) 400 NO (OFF) NO (ON) 350 300 250 200 150 25C 2 100 --40C 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 COM Voltage, VCOM (V) 1.4 1.6 1.8 Figure 3. ON-State Resistance vs COM Voltage (V+ = 1.65 V) 10 0 -40 25 Temperature, TA (C) 85 Figure 4. Leakage Current vs Temperature (V+ = 3.3 V) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 TYPICAL CHARACTERISTICS (continued) 45 4.0 40 3.5 35 Output Voltage, VOUT (V) Supply Current, I+ (nA) 3.0 30 25 20 15 10 2.5 2.0 1.5 1.0 5 INx = High 0 INx = Low -5 0.0 0.5 1.0 1.5 2.0 2.5 Supply Voltage, V+ (V) 3.0 3.5 0.5 0.0 0.0 4.0 Figure 5. Supply Current vs Supply Voltage 0.4 0.6 0.8 1.0 1.2 Input Voltage, VIN (V) 1.4 1.6 2.0 1.8 Figure 6. Control Input Thresholds (IN1, TA = 25C) -10 -10 -20 -20 -30 -30 -40 Magnitude (dB) -40 Magnitude (dB) 0.2 -50 -60 -50 -60 -70 1.8 V 2.5 V -70 -80 NO1TOCOM1-NO2 -80 3.3 V NO1TOCOM1-NO3 -90 NO1TOCOM1-NO4 NO1TOCOM1-NO5 -90 -100 NO1TOCOM1-NO6 0.1 -100 0.1 1 10 Frequency (MHz) 100 1 10 Frequency (MHz) 100 1000 1000 Figure 7. Crosstalk Adjacent Figure 8. Crosstalk Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 11 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com TYPICAL CHARACTERISTICS (continued) 0.11 -10 -20 -30 0.09 Magnitude (dB) Total Harmonic Distortion, THD (%) 0.10 1.8 V 2.5 V 0.08 3.3 V -40 -50 -60 -70 0.07 1.8 V -80 0.05 0.1 2.5 V 3.3 V 0.06 -90 -100 1 10 Frequency (Hz) 100 0.1 1000 1 Figure 9. Total Harmonic Distortion vs Frequency 10 Frequency (MHz) 100 1000 Figure 10. OFF Isolation 0 1 -2 0 -4 -1 Charge Injection, QC (pC) Magnitude (dB) -6 -8 -10 -12 1.8 V -14 -3 -4 -5 2.5 V -16 -2 3.3 V -6 -18 -20 0.1 -7 1 10 Frequency (MHz) 100 Figure 11. Insertion Loss 12 1000 0 0.3 0.6 0.9 1.2 Bias Voltage (V) 1.5 1.8 Figure 12. Charge Injection vs Bias Voltage (1.8 V) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 TYPICAL CHARACTERISTICS (continued) 2 4 2 0 Charge Injection, QC (pC) Charge Injection, QC (pC) 0 -2 -4 -6 -2 -4 -6 -8 -10 -12 -8 -14 -10 -16 0 0.3 0.6 0.9 1.5 1.8 1.2 Bias Voltage (V) 2.1 2.4 2.5 Figure 13. Charge Injection vs Bias Voltage (2.5 V) 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 Bias Voltage (V) 2.4 2.7 3.0 3.3 Figure 14. Charge Injection vs Bias Voltage (3.3 V) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 13 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com PARAMETER MEASUREMENT INFORMATION + IN + Figure 15. ON-state Resistance (rON) + + OFF-State Leakage Current Channel OFF VI = VIH or VIL IN + Figure 16. OFF-State Leakage Current (ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF)) 14 Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 PARAMETER MEASUREMENT INFORMATION (continued) ON-State Leakage Current Channel ON VI = VIH or VIL + IN + Figure 17. ON-State Leakage Current (ICOM(ON), INC(ON)) VNO NO Capacitance Meter VBIAS = V+ or GND and VI = VIH or VIL COM COM VBIAS Capacitance is measured at NO, COM, and IN inputs during ON and OFF conditions. Figure 18. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON)) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 15 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) TEST RL CL VCOM tON 50 35 pF V+ tOFF 50 35 pF V+ IN Logic Intput (VI) tOFF tON 90% Switch Output (VNO) 90% A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns, tf < 5 ns. B. CL includes probe and jig capacitance. Figure 19. Turn-On (tON) and Turn-Off Time (tOFF) VNC or VNO NC or NO NC or NO VOH VNC or VNO = V+/2 RL = 50 CL = 35 pF A. CL includes probe and jig capacitance. B. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns, tf < 5 ns. Figure 20. Break-Before-Make Time (tBBM) 16 Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E TS3A27518E www.ti.com........................................................................................................................................................... SCDS260B - MARCH 2009 - REVISED MAY 2009 PARAMETER MEASUREMENT INFORMATION (continued) Channel ON: NO to COM VI = VIH or VIL 50 Network Analyzer Setup Source Power = 0 dBM (632-mV P-P at 50- load) DC Bias = 350 mV IN + Figure 21. Bandwidth (BW) Channel OFF: NO to COM VI = VIH or VIL 50 Network Analyzer Setup Source Power = 0 dBM (632-mV P-P at 50- load) DC Bias = 350 mV IN + Figure 22. OFF Isolation (OISO) 50 VNC NC VNO NO Channel ON: NC to COM Channel OFF: NO to COM VI = VIH or VIL IN + Network Analyzer Setup Source Power = 0 dBM (632-mV P-P at 50- load) DC Bias = 350 mV Figure 23. Crosstalk (XTALK) Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E 17 TS3A27518E SCDS260B - MARCH 2009 - REVISED MAY 2009........................................................................................................................................................... www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) IN x A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns, tf < 5 ns. B. CL includes probe and jig capacitance. Figure 24. Charge Injection (QC) Channel ON: COM to NO VSOURCE = V+ P-P VI = VIH or VIL fSOURCE = 20 Hz to 20 kHz RL = 600 CL = 50 pF V+/2 Audio Analyzer NO 600 COM IN + 600 -V+/2 A. CL includes probe and jig capacitance. Figure 25. Total Harmonic Distortion (THD) 18 Submit Documentation Feedback Copyright (c) 2009, Texas Instruments Incorporated Product Folder Link(s): TS3A27518E PACKAGE OPTION ADDENDUM www.ti.com 28-Aug-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) (Requires Login) TS3A27518EPWR ACTIVE TSSOP PW 24 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TS3A27518ERTWR ACTIVE WQFN RTW 24 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TS3A27518EZQSR ACTIVE BGA MICROSTAR JUNIOR ZQS 24 2500 Green (RoHS & no Sb/Br) SNAGCU Samples Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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OTHER QUALIFIED VERSIONS OF TS3A27518E : Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 28-Aug-2012 * Automotive: TS3A27518E-Q1 NOTE: Qualified Version Definitions: * Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TS3A27518EPWR TSSOP PW 24 2000 330.0 16.4 6.95 8.3 1.6 8.0 16.0 Q1 TS3A27518EZQSR BGA MI CROSTA R JUNI OR ZQS 24 2500 330.0 12.4 3.3 3.3 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TS3A27518EPWR TSSOP PW 24 2000 367.0 367.0 38.0 TS3A27518EZQSR BGA MICROSTAR JUNIOR ZQS 24 2500 340.5 338.1 20.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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