1
FEATURES
APPLICATIONS
N.C. – Notinternallyconnected
RTWPACKAGE
(TOP VIEW)
COM5
IN2
NO1
COM6
NO3
NO2
N.C.
NC6
NC1
NC3
NC2
IN1
COM3
COM2
COM1
V+
GND
COM4
NO5
NO4
NO6
NC4
NC5
EN
1
2
3
4
5
6
7
24
8
23
15
14
13
12
19
11
20
10
21
9
22
16
17
18
1 24
223
322
421
520
619
718
817
916
10 15
11 14
12 13
PW PACKAGE
(TOP VIEW)
IN1
NC3
NC6
NC4
EN
NC5
NO5
NO4
NO6
NO3
IN2
NO2
NC2
NC1
N.C.
COM1
GND
COM2
COM3
V+
COM4
COM5
NO1
COM6
ZQSPACKAGE
(TOP VIEW)
1 2 345
A
B
C
D
E
TS3A27518E
www.ti.com
........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
6-BIT, 1-of-2 MULTIPLEXER/DEMULTIPLEXER WITH INTEGRATED IEC L-4 ESDAND 1.8-V LOGIC COMPATIBLE CONTROL INPUTS
•1.65-V to 3.6-V Single-Supply Operation•Isolation in Powerdown Mode, V
+
= 0•Low Capacitance Switches, 21.5 pF (Typical)•Bandwidth up to 240 MHz for High-SpeedRail-to-Rail Signal Handling•Crosstalk and Off Isolation of -62dB•1.8-V Logic Threshold Compatibility forControl Inputs•3.6-V Tolerant Control Inputs•Latch-Up Performance Exceeds 100-mA PerJESD 78, Class II•ESD Performance Tested Per JESD 22– 2500-V Human-Body Model(A114-B, Class II)– 1500-V Charged-Device Model (C101)•ESD Performance: NC/NO Ports– ± 6-kV Contact Discharge (IEC 61000-4-2)•24-QFN (4 × 4 mm), 24-BGA (3 × 3 mm) and24-TSSOP (7.9 × 6.6 mm) Packages
•SD/SDIO and MMC Two Port MUX•PC VGA Video MUX/Video Systems•Audio and Video Signal Routing
ZQS PIN ASSIGNMENTS
1 2 3 4 5
ACOM1 NC2 N.C. NC3 NC6
BCOM2 NC1 IN1 NC4
CCOM3 V
+
GND EN NC5
DCOM4 COM6 IN2 NO5 NO4
ECOM5 NO1 NO2 NO3 NO6
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
DESCRIPTION/ORDERING INFORMATION
VCC
IN2
GND
NC1
NO1
COM1
NC2
NO2
COM2
NC3
NO3
COM3
NC4
NO4
COM4
NC5
NO5
COM5
NC6
NO6
COM6
IN1
EN Logic
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009 ...........................................................................................................................................................
www.ti.com
The TS3A27518E is a 6-bit 1-of-2 Mux/Demux designed to operate from 1.65 V to 3.6 V. This device can handleboth digital and analog signals, and signals up to V
+
can be transmitted in either direction. The TS3A27518E hastwo control pins, each controlling three 1-of-2 muxes at the same time, and an enable pin that is used to put alloutputs in high-impedance mode. The control pins are compatible with 1.8V logic thresholds and are backwardcompatible with 2.5 V and 3.3 V logic thresholds as well.
The TS3A27518E allows any SD, SDIO, and multimedia card host controllers to be expanded out to multiplecards or peripherals since the SDIO interface consists of 6-bits: CMD, CLK, and Data[0:3] signals. TheTS3A27518E has two control pins that give additional flexibility to the user. For example, the ability to mux twodifferent audio-video signals in equipment such as an LCD television,an LCD monitor, or a notebook dockingstation.
ORDERING INFORMATION
T
A
PACKAGE
(1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
BGA – ZQS Tape and reel TS3A27518EZQSR YL518E– 40 ° C to 85 ° C QFN – RTW Tape and reel TS3A27518ERTWR YL518ETSSOP – PW Tape and reel TS3A27518EPWR YL518E
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging .(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .
LOGIC DIAGRAM
SUMMARY OF CHARACTERISTICSV
+
= 3.3 V, T
A
= 25 ° C
1-of-2Configuration
Multiplexer/DemultiplexerNumber of channels 6ON-state resistance (r
on
) 6.2 Ω(max)ON-state resistance match ( Δr
on
) 0.7 Ω(max)ON-state resistance flatness
2.1 Ω(max)(r
ON(flat)
)Turn-on/turn-off time (t
ON
/t
OFF
) 59 ns/ 60.6 ns (max)Break-before-make time (t
BBM
) 22.7 ns (max)Charge injection (Q
C
) 0.81 pCBandwidth (BW) 240 MHzOFF isolation (O
ISO
) – 62 dB at 10 MHzCrosstalk (X
TALK
) – 62 dB at 10 MHzTotal harmonic distortion (THD) 0.05%Power-supply current (I
+
) < 0.3 µA (max)24-pin QFN (RTW),Package options 24-BGA (ZQS)24-TSSOP (PW)
FUNCTION TABLE
NC1/2/3 TO COM1/2/3, NC4/5/6 TO COM4/5/6, NO1/2/3 TO COM1/2/3, NO4/5/6 TO COM4/5/6,EN IN1 IN2
COM1/2/3 TO NC1/2/3 COM4/5/6 TO NC4/5/6 COM1/2/3 TO NO1/2/3 COM4/5/6 TO NO4/5/6
H X X OFF OFF OFF OFFL L L ON ON OFF OFFL H L OFF ON ON OFFL L H ON OFF OFF ONL H H OFF OFF ON ON
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Product Folder Link(s): TS3A27518E
SD/MMC
MemoryCard
SDIOPeripheral
(Bluetooth,
WLAN,DTV,etc)
Digital
Basebandor
AppsProcessor
COM1
COM2
COM3
COM4
COM5
COM6
IN1,IN2, EN
NC1
NO1
NC2
NC3
NC4
NC5
NC6
NO2
NO3
NO4
NO5
NO6
TS3A27518
VCC
VCC VCC
VCC
SDIOPort
TS3A27518E
www.ti.com
........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
SDIO EXPANDER APPLICATION BLOCK DIAGRAM
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3
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ABSOLUTE MINIMUM AND MAXIMUM RATINGS
(1) (2)
THERMAL IMPEDANCE RATINGS
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
(1)
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009 ...........................................................................................................................................................
www.ti.com
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
+
Supply voltage range
(3)
– 0.5 4.6 VV
NC
V
NO
Analog voltage range
(3) (4) (5)
– 0.5 4.6 VV
COM
I
K
Analog port diode current
(6)
V
+
< V
NC
, V
NO
, V
COM
< 0 – 50 mAI
NC
I
NO
ON-state switch current
(7)
V
NC
, V
NO
, V
COM
= 0 to V
+
– 50 50 mAI
COM
V
I
Digital input voltage range
(3) (4)
– 0.5 4.6 VI
IK
Digital input clamp current
(3) (4)
V
IO
< V
I
< 0 – 50 mAI
+
Continuous current through V
+
100 mAI
GND
Continuous current through GND – 100 mAT
stg
Storage temperature range – 65 150 ° C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 5.5 V maximum.(6) Requires clamp diodes on analog port to V
+
.(7) Pulse at 1-ms duration < 10% duty cycle
UNIT
PW package 87.9θ
JA
Package thermal impedance
(1)
RTW package 66 ° C/WZQS package 171.6
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Ωrange V
NO
, V
NC
25 ° C 4.4 6.2ON-state 0 ≤(V
NC
or V
NO
)≤V
+
, Switch ON,r
on
3 V Ωresistance I
COM
= – 32 mA, See Figure 15
Full 7.6
ON-state 25 ° C 0.3 0.7V
NC
or V
NO
= 2.1 V, Switch ON,resistance match Δr
on
3 V ΩI
COM
= – 32 mA, See Figure 15
Full 0.8between channels
ON-state 25 ° C 0.95 2.10≤(V
NC
or V
NO
)≤V
+
, Switch ON,resistance r
on(flat)
3 V ΩI
COM
= – 32 mA, See Figure 16
Full 2.3flatness
V
NC
or V
NO
= 1 V, 25 ° C – 0.5 0.05 0.5V
COM
= 3 V,I
NC(OFF)
,
or 3.6 VI
NO(OFF)
Full – 7 7V
NC
or V
NO
= 3 V,NC, NO
V
COM
= 1 V,
Switch OFF,OFF leakage µASee Figure 16V
NC
or V
NO
= 0 to 3.6 V, 25 ° C – 1 0.05 1current
V
COM
= 3.6 V to 0,I
NC(PWROFF)
,
or 0 VI
NO(PWROFF)
Full – 12 12V
NC
or V
NO
= 3.6 V to 0,V
COM
= 0 to 3.6 V,
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
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TS3A27518E
www.ti.com
........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
V
NC
or V
NO
= 3 V, 25 ° C – 1 0.01 1V
COM
= 1 V,I
COM(OFF)
or 3.6 VFull – 2 2V
NC
or V
NO
= 1 V,COM
V
COM
= 3 V,
Switch OFF,OFF leakage µASee Figure 16V
NC
or V
NO
= 3.6 V to 0, 25 ° C – 1 0.02 1current
V
COM
= 0 to 3.6 V,I
COM(PWROFF)
or 0 VFull – 12 1V
NC
or V
NO
= 0 to 3.6 V,V
COM
= 3.6 V to 0,
V
NC
or V
NO
= 1 V, 25 ° C – 2.5 0.04 2.2NC, NO V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 3.6 V µAI
NC(ON)
See Figure 17
Full – 7 7current V
NC
or V
NO
= 3 V,V
COM
= Open,
V
NC
or V
NO
= Open, 25 ° C – 2 0.03 2COM V
COM
= 1 V,
Switch ON,ON leakage I
COM(ON)
or 3.6 V µASee Figure 17
Full – 7 7current V
NC
or V
NO
= Open,V
COM
= 3 V,
Digital Control Inputs (IN1, IN2, EN)
(2)
Input logic high V
IH
Full 3.6 V 1.2 3.6 V
Input logic low V
IL
Full 3.6 V 0 0.65 V
25 ° C – 0.1 0.05 0.1Input leakage current I
IH
, I
IL
V
I
= V
+
or 0 3.6 V µAFull – 2.5 2.5
Dynamic
25 ° C 3.3 V 18.1 59V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
nsR
L
= 50 Ω, See Figure 19
Full 3 V to 3.6 V 60
25 ° C 3.3 V 25.4 60.6V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
nsR
L
= 50 Ω, See Figure 19
Full 3 V to 3.6 V 61
25 ° C 3.3 V 4 11.1 22.7Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
nsmake time R
L
= 50 Ω, See Figure 20
Full 3 V to 3.6 V 28
V
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 ° C 3.3 V 0.81 pCR
GEN
= 0, See Figure 24
NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 3.3 V 13 pFOFF capacitance C
NO(OFF)
Switch OFF,
COM V
NC
or V
NO
= V
+
or GND,C
COM(OFF)
See Figure 18 3.3 V 8.5 pFOFF capacitance Switch OFF,
NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 3.3 V 21.5 pFON capacitance C
NO(ON)
Switch OFF,
COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 18 25 ° C 3.3 V 21.5 pFON capacitance Switch ON,
Digital input
C
I
V
I
= V
+
or GND See Figure 18 25 ° C 3.3 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 3.3 V 240 MHzSee Figure 20
R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 3.3 V – 62 dBf = 10 MHz, See Figure 22
R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 3.3 V – 62 dBf = 10 MHz, See Figure 23
R
L
= 50 Ω, Switch ON,Crosstalk adjacent X
TALK(ADJ)
25 ° C 3.3 V – 71 dBf = 10 MHz, See Figure 23
Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 ° C 3.3 V 0.05 %distortion C
L
= 50 pF, See Figure 25
Supply
25 ° C 0.04 0.3Positive
I
+
V
I
= V
+
or GND, Switch ON or OFF 3.6 V µAsupply current
Full 3
(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 5
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
(1)
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009 ...........................................................................................................................................................
www.ti.com
V
+
= 2.3 V to 2.7 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Ωrange V
NO
, V
NC
25 ° C 5.5 9.6ON-state 0 ≤(V
NC
or V
NO
)≤V
+
, Switch ON,r
on
2.3 V Ωresistance I
COM
= – 32 mA, See Figure 15
Full 11.5
ON-state 25 ° C 0.3 0.8V
NC
or V
NO
= 1.6 V, Switch ON,resistance match Δr
on
2.3 V ΩI
COM
= – 32 mA, See Figure 15
Full 0.9between channels
ON-state 25 ° C 0.91 2.20≤(V
NC
or V
NO
)≤V
+
, Switch ON,resistance r
on(flat)
2.3 V ΩI
COM
= – 32 mA, See Figure 16
Full 2.3flatness
V
NC
or V
NO
= 0.5 V, 25 ° C – 0.3 0.04 0.3V
COM
= 2.3 V,I
NC(OFF)
,
or 2.7 VI
NO(OFF)
Full – 6 6V
NC
or V
NO
= 2.3 V,NC, NO
V
COM
= 0.5 V,
Switch OFF,OFF leakage µASee Figure 16V
NC
or V
NO
= 0 to 2.7 V, 25 ° C – 0.6 0.02 0.6current
V
COM
=2.7 V to 0,I
NC(PWROFF)
,
or 0 VI
NO(PWROFF)
Full – 10 10V
NC
or V
NO
= 2.7 V to 0,V
COM
= 0 to 2.7 V,
V
NC
or V
NO
= 0.5 V, 25 ° C – 0.7 0.02 0.7V
COM
= 2.3 V,I
COM(OFF)
or 2.7 VFull – 1 1V
NC
or V
NO
= 2.3 V,COM
V
COM
= 0.5 V,
Switch OFF,OFF leakage µASee Figure 16V
NC
or V
NO
= 2.7 V to 0, 25 ° C – 0.7 0.02 0.7current
V
COM
= 0 to 2.7 V,I
COM(PWROFF)
or 0 VFull – 7.2 7.2V
NC
or V
NO
= 0 to 2.7 V,V
COM
= 2.7 V to 0,
NC, NO V
NC
or V
NO
= 0.5 V or 2.3 25 ° C – 2.1 0.03 2.1I
NO(ON)
, Switch ON,ON leakage V, 2.7 V µAI
NC(ON)
See Figure 17
Full – 6 6current V
COM
= Open,
V
NC
or V
NO
= Open, 25 ° C – 2 0.02 2COM V
COM
= 0.5 V,
Switch ON,ON leakage I
COM(ON)
or 2.7 V µASee Figure 17
Full – 5.7 5.7current V
NC
or V
NO
= Open,V
COM
= 2.3 V,
Digital Control Inputs (IN1, IN2, EN)
(2)
Input logic high V
IH
V
I
= V
+
or GND Full 2.7 V 1.15 3.6 V
Input logic low V
IL
Full 2.7 V 0 0.55 V
25 ° C -0.1 0.01 0.1Input leakage current I
IH
, I
IL
V
I
= V
+
or 0 2.7 V µAFull – 2.1 2.1
Dynamic
25 ° C 2.5 V 17.2 36.8V
COM
= V+, C
L
= 35 pF,Turn-on time t
ON
nsR
L
= 50 Ω, See Figure 19
Full 2.3 V to 2.7 V 42.5
25 ° C 2.5 V 17.1 29.8V
COM
= V+, C
L
= 35 pF,Turn-off time t
OFF
nsR
L
= 50 Ω, See Figure 19
Full 2.3 V to 2.7 V 34.4
25 ° C 2.5 V 4.5 13 30Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
nsmake time R
L
= 50 Ω, See Figure 20
Full 2.3 V to 2.7 V 33.3
V
GEN
= 0, C
L
= 0.1 nF,Charge injection Q
C
25 ° C 2.5 V 0.47 pCR
GEN
= 0, See Figure 24
NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 2.5 V 13.5 pFOFF capacitance C
NO(OFF)
Switch OFF,
COM V
NC
or V
NO
= V
+
or GND,C
COM(OFF)
See Figure 18 2.5 V 9 pFOFF capacitance Switch OFF,
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): TS3A27518E
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
(1)
TS3A27518E
www.ti.com
........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)V
+
= 2.3 V to 2.7 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 2.5 V 22 pFON capacitance C
NO(ON)
Switch OFF,
COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 18 25 ° C 2.5 V 22 pFON capacitance Switch ON,
Digital input
C
I
V
I
= V
+
or GND See Figure 18 25 ° C 2.5 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 2.5 V 240 MHzSee Figure 20
R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 2.5 V – 62 dBf = 10 MHz, See Figure 22
R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 2.5 V – 62 dBf = 10 MHz, See Figure 23
R
L
= 50 Ω, Switch ON,Crosstalk adjacent X
TALK(ADJ)
25 ° C 2.5 V – 71 dBf = 10 MHz, See Figure 23
Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 ° C 2.5 V 0.06 %distortion C
L
= 50 pF, See Figure 25
Supply
25 ° C 0.01 0.1Positive
I
+
V
I
= V
+
or GND, Switch ON or OFF 2.7 V µAsupply current
Full 2
V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Ωrange V
NO
, V
NC
25 ° C 7.1 14.4ON-state 0 ≤(V
NC
or V
NO
)≤V
+
, Switch ON,r
on
1.65 V Ωresistance I
COM
= – 32 mA, See Figure 15
Full 16.3
ON-state 25 ° C 0.3 1V
NC
or V
NO
= 1.5 V, Switch ON,resistance match Δr
on
1.65 V ΩI
COM
= – 32 mA, See Figure 15
Full 1.2between channels
ON-state 25 ° C 2.7 5.50≤(V
NC
or V
NO
)≤V
+
, Switch ON,resistance r
on(flat)
1.65 V ΩI
COM
= – 32 mA, See Figure 16
Full 7.3flatness
V
NC
or V
NO
= 0.3 V, 25 ° C – 0.25 0.03 0.25V
COM
= 1.65 V,I
NC(OFF)
,
or 1.95 V µAI
NO(OFF)
Full – 5 5V
NC
or V
NO
= 1.65 V,NC, NO
V
COM
= 0.3 V
Switch OFF,OFF leakage
See Figure 16V
NC
or V
NO
= 1.95 V to 0, 25 ° C – 0.4 0.01 0.4current
V
COM
= 0 to 1.95 V,I
NC(PWROFF)
,
or 0 V µAI
NO(PWROFF)
Full – 7.2 7.2V
NC
or V
NO
= 0 to 1.95 V,V
COM
= 1.95 V to 0,
V
NC
or V
NO
= 0.3 V, 25 ° C – 0.4 0.02 0.4V
COM
= 1.65 V,I
COM(OFF)
,
or 1.95 V µAI
COM(OFF)
Full – 0.9 0.9V
NC
or V
NO
= 1.65 V,COM
V
COM
= 0.3 V
Switch OFF,OFF leakage
See Figure 16V
NC
or V
NO
= 1.95 V to 0, 25 ° C – 0.4 0.02 0.4current
V
COM
= 0 to 1.95 V,I
COM(PWROFF)
,
or 0 V µAI
COM(PWROFF)
Full – 5 5V
NC
or V
NO
= 0 to 1.95 V,V
COM
= 1.95 V to 0,
V
NC
or V
NO
= 0.3 V, 25 ° C – 2 0.02 2NC, NO V
COM
= Open,I
NO(ON)
, Switch ON,ON leakage or 1.95 V µAI
NC(ON)
See Figure 17
Full – 5.2 5.2current V
NC
or V
NO
= 1.65 V,V
COM
= Open,
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
V
NC
or V
NO
= Open, 25 ° C – 2 0.02 2COM V
COM
= 0.3 V,
Switch ON,ON leakage I
COM(ON)
or 1.95 V µASee Figure 17
Full – 5.2 5.2current V
NC
or V
NO
= Open,V
COM
= 1.65 V,
Digital Control Inputs (IN1, IN2, EN)
(2)
Input logic high V
IH
V
I
= V
+
or GND Full 1.95 V 1 3.6 V
Input logic low V
IL
Full 1.95 V 0 0.4 V
25 ° C -0.1 0.01 0.1Input leakage current I
IH
, I
IL
V
I
= V
+
or 0 1.95 V µAFull -2.1 2.1
Dynamic
25 ° C 1.8 V 14.1 49.3V
COM
= V
+
, C
L
= 35 pF,Turn-on time t
ON
ns1.65 V to 1.95R
L
= 50 Ω, See Figure 19
Full 56.7V
25 ° C 1.8 V 16.1 26.5V
COM
= V
+
, C
L
= 35 pF,Turn-off time t
OFF
ns1.65 V to 1.95R
L
= 50 Ω, See Figure 19
Full 31.2V
25 ° C 1.8 V 5.3 18.4 58Break-before- V
NC
= V
NO
= V
+
/2, C
L
= 35 pF,t
BBM
ns1.65 V to 1.95make time R
L
= 50 Ω, See Figure 20
Full 58V
V
GEN
= 0, C
L
= 1 nF,Charge injection Q
C
25 ° C 1.8 V 0.21 pCR
GEN
= 0, See Figure 24
NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 1.8 V 9 pFOFF capacitance C
NO(OFF)
Switch OFF,
NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 18 25 ° C 1.8 V 22 pFON capacitance C
NO(ON)
Switch OFF,
COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 18 25 ° C 1.8 V 22 pFON capacitance Switch ON,
Digital input
C
I
V
I
= V
+
or GND See Figure 18 25 ° C 1.8 V 2 pFcapacitance
Switch ON,Bandwidth BW R
L
= 50 Ω, 25 ° C 1.8 V 240 MHzSee Figure 20
R
L
= 50 Ω, Switch OFF,OFF isolation O
ISO
25 ° C 1.8 V -60 dBf = 10 MHz, See Figure 22
R
L
= 50 Ω, Switch ON,Crosstalk X
TALK
25 ° C 1.8 V -60 dBf = 10 MHz, See Figure 23
R
L
= 50 Ω, Switch ON,Crosstalk adjacent X
TALK(ADJ)
25 ° C 1.8 V -71 dBf = 10 MHz, See Figure 23
Total harmonic R
L
= 600 Ω, f = 20 Hz to 20 kHz,THD 25 ° C 1.8 V 0.1 %distortion C
L
= 50 pF, See Figure 25
Supply
25 ° C 0.01 0.1Positive
I
+
V
I
= V
+
or GND, Switch ON or OFF 1.95 V µAsupply current
Full 1.5
(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
PARAMETER DESCRIPTION
SYMBOL DESCRIPTION
V
COM
Voltage at COMV
NC
Voltage at NCV
NO
Voltage at NOr
on
Resistance between COM and NC or NO ports when the channel is ON
Δr
on
Difference of r
on
between channels in a specific devicer
on(flat)
Difference between the maximum and minimum value of r
on
in a channel over the specified range of conditionsI
NC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF stateLeakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the outputI
NC(ON)
(COM) openI
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF stateLeakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the outputI
NO(ON)
(COM) openI
COM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF stateLeakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and theI
COM(ON)
output (NC or NO) openV
IH
Minimum input voltage for logic high for the control input (IN, EN)V
IL
Maximum input voltage for logic low for the control input (IN, EN)V
I
Voltage at the control input (IN, EN)I
IH
, I
IL
Leakage current measured at the control input (IN, EN)Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
ON
delay between the digital control (IN) signal and analog output NC or NO) signal when the switch is turning ON.Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagationt
OFF
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF.Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO)Q
C
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, Q
C
= C
L
×ΔV
COM
, C
L
is the load capacitance and ΔV
COM
is the change in analog output voltage.C
NC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFFC
NC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ONC
NO(OFF)
Capacitance at the NC port when the corresponding channel (NO to COM) is OFFC
NO(ON)
Capacitance at the NC port when the corresponding channel (NO to COM) is ONC
COM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC) is OFFC
COM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC) is ONC
I
Capacitance of control input (IN, EN)OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specificO
ISO
frequency, with the corresponding channel (NC to COM) in the OFF state.Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). AdjacentX
TALK
crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2) .This ismeasured in a specific frequency and in dB.BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is – 3 dB below the DC gain.Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of rootTHD mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamentalharmonic.I
+
Static power-supply current with the control (IN) pin at V
+
or GND
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TYPICAL CHARACTERISTICS
0.0 0.5 1.0 1.5 2.0 2.5
COM Voltage, V (V)
COM
0
8
ON-State Resistance, r ( )
ON W
1
2
3
4
5
6
7
85ºC
25ºC
-–40ºC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
COM Voltage, V (V)
COM
0
1
2
3
4
5
6
7
ON-State Resistance, r ( )
ON W
85ºC
25ºC
–40ºC
0.0 1.8
COM Voltage, V (V)
COM
ON-State Resistance, r ( )
ON W
0
12
2
4
6
8
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
85ºC
25ºC
-–40ºC
Temperature, TA(°C)
Leakage Current, I(nA)
I
0
600
50
100
150
200
250
300
350
400
450
500
550
–40 25 85
COM (OFF)
COM (ON)
NO (OFF)
NO (ON)
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Figure 1. ON-State Resistance vs COM Voltage (V
+
= 3 V) Figure 2. ON-State Resistance vs COM Voltage (V
+
= 2.3 V)
Figure 3. ON-State Resistance vs COM Voltage (V
+
= 1.65 Figure 4. Leakage Current vs Temperature (V
+
= 3.3 V)V)
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0.0 4.0
Supply Voltage, V+(V)
Supply Current, I (nA)
+
–5
45
0
5
10
15
20
25
30
35
40
0.5 1.0 1.5 2.0 2.5 3.0 3.5
INx = High
INx = Low
Magnitude (dB)
–100
–10
–80
–90
–70
–60
–50
–40
–30
–20
1.8 V
2.5 V
3.3 V
Frequency ( z)MH
0.1 110 100 1000
Frequency ( z)MH
Magnitude (dB)
–100
–10
–80
–90
–70
–60
–50
–40
–30
–20
0.1 110 100 1000
NO1TOCOM1-NO2
NO1TOCOM1-NO3
NO1TOCOM1-NO4
NO1TOCOM1-NO5
NO1TOCOM1-NO6
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........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
Figure 5. Supply Current vs Supply Voltage Figure 6. Control Input Thresholds (IN1, T
A
= 25 ° C)
Figure 7. Crosstalk Adjacent Figure 8. Crosstalk
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Magnitude (dB)
–100
–10
–90
–80
–70
–60
–50
–40
–30
–20
1.8 V
2.5 V
3.3 V
Frequency ( z)MH
0.1 110 100 1000
0.1 1000
Frequency (Hz)
Total Harmonic Distortion, THD (%)
0.05
0.11
0.06
0.07
0.08
0.09
0.10
1 10 100
1.8 V
2.5 V
3.3 V
Bias Voltage (V)
Charge Injection, Q (pC)
C
–7
1
–6
–5
–4
–3
–2
–1
0
0 0.3 0.6 0.9 1.2 1.5 1.8
Magnitude (dB)
–20
0
–18
–16
–14
–12
–10
–8
–6
–4
–2
1.8 V
2.5 V
3.3 V
Frequency ( z)MH
0.1 110 100 1000
TS3A27518E
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TYPICAL CHARACTERISTICS (continued)
Figure 9. Total Harmonic Distortion vs Frequency Figure 10. OFF Isolation
Figure 11. Insertion Loss Figure 12. Charge Injection vs Bias Voltage (1.8 V)
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Bias Voltage (V)
Charge Injection, Q (pC)
C
–10
2
–8
–6
–4
–2
0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.5
Bias Voltage (V)
Charge Injection, Q (pC)
C
–16
–14
–12
–10
4
–8
–6
–4
–2
0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.4 2.7 3.0 3.3
2
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........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
Figure 13. Charge Injection vs Bias Voltage (2.5 V) Figure 14. Charge Injection vs Bias Voltage (3.3 V)
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PARAMETER MEASUREMENT INFORMATION
Ω
IN
+
+
IN
+
+
+OFF-StateLeakageCurrent
ChannelOFF
V =V orV
I IH IL
TS3A27518E
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Figure 15. ON-state Resistance (r
ON
)
Figure 16. OFF-State Leakage Current(I
COM(OFF)
, I
NC(OFF)
, I
COM(PWROFF)
, I
NC(PWROFF)
)
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ON-StateLeakageCurrent
ChannelON
V =V orV
I IH IL
IN
+
+
COMCOM
NO
VBIAS
VNO
Capacitance
Meter V = V
BIAS + or GND and
or
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VIH
V V
I IL
=
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........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 17. ON-State Leakage Current(I
COM(ON)
, I
NC(ON)
)
Figure 18. Capacitance(C
I
, C
COM(OFF)
, C
COM(ON)
, C
NC(OFF)
, C
NC(ON)
)
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50 Ω
50 Ω
35pF
VCOM
RLCL
V+
tON
tON
90% 90%
Switch
Output
(V )
NO
Logic
Intput
(V )
I
TEST
tOFF
tOFF
V+
35pF
IN
VOH
NC or NO
NC or NO
V or V
NC NO
V or V
NC NO = V /2
R = 50
C = 35 pF
+
L
L
Ω
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009 ...........................................................................................................................................................
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PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 19. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
A. C
L
includes probe and jig capacitance.B. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.
Figure 20. Break-Before-Make Time (t
BBM
)
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Network AnalyzerSetup
SourcePower=0dBM
(632-mVP-P at50- load)
DCBias=350mV
Ω
ChannelON:NOtoCOM
V =V orV
I IH IL
50 Ω
Ω
IN
+
Network AnalyzerSetup
SourcePower=0dBM
(632-mVP-P at50- load)
DCBias=350mV
Ω
ChannelOFF:NOtoCOM
V =V orV
I IH IL
50 Ω
Ω
Ω
IN
+
Network AnalyzerSetup
SourcePower=0dBM
(632-mVP-P at50- load)
DCBias=350mV
Ω
ChannelON:NCtoCOM
V =V orV
I IH IL
ChannelOFF:NOtoCOM
50 ΩNC
NO
VNC
VNO
Ω
Ω
IN
+
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........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 21. Bandwidth (BW)
Figure 22. OFF Isolation (O
ISO
)
Figure 23. Crosstalk (X
TALK
)
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x Δ
Δ
IN
Audio Analyzer
ChannelON:COMtoNO V =V orV R =600
V =V P-P f =20Hzto20kHz C =50pF
I IH IL L
SOURCE + SOURCE L
Ω
600 Ω
600 Ω
COM
NO
V /2
+
–V /2
+
IN
+
TS3A27518E
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PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 24. Charge Injection (Q
C
)
A. C
L
includes probe and jig capacitance.
Figure 25. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
www.ti.com 28-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TS3A27518EPWR ACTIVE TSSOP PW 24 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A27518ERTWR ACTIVE WQFN RTW 24 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR
TS3A27518EZQSR ACTIVE BGA
MICROSTAR
JUNIOR
ZQS 24 2500 Green (RoHS
& no Sb/Br) SNAGCU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TS3A27518E :
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
•Automotive: TS3A27518E-Q1
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS3A27518EPWR TSSOP PW 24 2000 330.0 16.4 6.95 8.3 1.6 8.0 16.0 Q1
TS3A27518EZQSR BGA MI
CROSTA
R JUNI
OR
ZQS 24 2500 330.0 12.4 3.3 3.3 1.6 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS3A27518EPWR TSSOP PW 24 2000 367.0 367.0 38.0
TS3A27518EZQSR BGA MICROSTAR
JUNIOR ZQS 24 2500 340.5 338.1 20.6
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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