5420/DM5420/DM7420 Dual 4-Input NAND Gates General Description Features This device contains two independent gates each of which performs the logic NAND function. Y Alternate Military/Aerospace device (5420) is available. Contact a National Semiconductor Sales Office/Distributor for specifications. Connection Diagram Dual-In-Line Package TL/F/6506 - 1 Order Number 5420DMQB, 5420FMQB, DM5420J, DM5420W or DM7420N See NS Package Number J14A, N14A or W14B Function Table Y e ABCD Inputs Output A B C D Y X X X L H X X L X H X L X X H L X X X H H H H H L H e High Logic Level L e Low Logic Level X e Either Low or High Logic Level C1995 National Semiconductor Corporation TL/F/6506 RRD-B30M105/Printed in U. S. A. 5420/DM5420/DM7420 Dual 4-Input NAND Gates June 1989 Absolute Maximum Ratings (Note) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Note: The ``Absolute Maximum Ratings'' are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the ``Electrical Characteristics'' table are not guaranteed at the absolute maximum ratings. The ``Recommended Operating Conditions'' table will define the conditions for actual device operation. Supply Voltage 7V Input Voltage 5.5V Operating Free Air Temperature Range b 55 C to a 125 C DM54 and 54 DM74 0 C to a 70 C Storage Temperature Range b 65 C to a 150 C Recommended Operating Conditions Symbol DM5402 Parameter VCC Supply Voltage VIH High Level Input Voltage VIL Low Level Input Voltage IOH High Level Output Current IOL Low Level Output Current TA Free Air Operating Temperature DM7402 Units Min Nom Max Min Nom Max 4.5 5 5.5 4.75 5 5.25 2 V 2 V 0.8 0.8 V b 0.4 b 0.4 mA 16 mA 70 C 16 b 55 125 0 Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted) Symbol Parameter Conditions Min Typ (Note 1) Max Units b 1.5 V VI Input Clamp Voltage VCC e Min, II e b12 mA VOH High Level Output Voltage VCC e Min, IOH e Max VIL e Max VOL Low Level Output Voltage VCC e Min, IOL e Max VIH e Min II Input Current @ Max Input Voltage VCC e Max, VI e 5.5V IIH High Level Input Current VCC e Max, VI e 2.4V 40 mA IIL Low Level Input Current VCC e Max, VI e 0.4V b 1.6 mA IOS Short Circuit Output Current VCC e Max (Note 2) ICCH Supply Current with Outputs High VCC e Max 2 4 mA ICCL Supply Current with Outputs Low VCC e Max 6 11 mA 2.4 3.4 V 0.2 0.4 V 1 mA DM54 b 20 b 55 DM74 b 18 b 55 mA Switching Characteristics at VCC e 5V and TA e 25 C (See Section 1 for Test Waveforms and Output Load) Symbol Parameter Conditions tPLH Propagation Delay Time Low to High Level Output CL e 15 pF RL e 400X tPHL Propagation Delay Time High to Low Level Output Note 1: All typicals are at VCC e 5V, TA e 25 C. Note 2: Not more than one output should be shorted at a time. 2 Min Max Units 22 ns 15 ns Physical Dimensions inches (millimeters) 14-Lead Ceramic Dual-In-Line Package (J) Order Number 5420DMQB or DM5420J NS Package Number J14A 14-Lead Molded Dual-In-Line Package (N) Order Number DM7420N NS Package Number N14A 3 5420/DM5420/DM7420 Dual 4-Input NAND Gates Physical Dimensions inches (millimeters) (Continued) 14-Lead Ceramic Flat Package (W) Order Number 5420FMQB or DM5420W NS Package Number W14B LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. 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