PNP Darlington Power Silicon Transistor
Rev. V2
2N6286 & 2N6287
1
1
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1
Features
• Available in JANTX and JANTXV per
MIL-PRF-19500/505
• TO-3 (TO-204AA) Package
Electrical Characteristics
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
Collector - Emitter Breakdown Voltage
IC = -100 mAdc
2N6286
2N6287
V(BR)CEO Vdc
-80
-100
—
Collector - Emitter Cutoff Current VCE = -40 Vdc, 2N6286
VCE = -50 Vdc, 2N6287 ICEO mAdc — -1.0
Collector - Emitter Cutoff Current VCE = 80 Vdc, VBE = +1.5 Vdc, 2N6286
VCE = 100 Vdc, VBE = +1.5 Vdc, 2N6287 ICEX mAdc — -0.5
Collector - Base Cutoff Current VEB = -7 Vdc IEBO mAdc — -2.0
On Characteristics1
Forward Current Transfer Ratio
IC = -1 Adc, VCE = -3 Vdc
IC = -6 Adc, VCE = -3 Vdc
IC = -12 Adc, VCE = -3 Vdc
HFE -
1000
1000
150
18000
Collector - Emitter Saturation Voltage IC = -20 Adc, IB = -200 mAdc
IC = -10 Adc, IB = -40 mAdc VCE(SAT) Vdc — -3.0
-2.0
Base - Emitter Saturation Voltage IC = -20 Adc, IB = -200 mAdc VBE(SAT) Vdc — -4.0
Base - Emitter Voltage IC = -10 Adc, IB = -3 Vdc VBE Vdc — -2.8
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = -10 Adc, VCE = -3 Vdc, f = 1 kHz | HFE | - 8 80
Small-Signal Short-Circuit
Forward Current Transfer Ratio IC = -10 Adc, VCE = -3 Vdc, f = 1 kHz HFE - 300 —
Output Capacitance VCB = -10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF — 400
Switching Characteristics
Turn-On Time VCC = -30 Vdc; IC = -10 Adc; IB1 = -40 mAdc TON µs — 2
Turn-Off Time VCC = -30 Vdc; IC = -10 Adc; IB1 = -40 mAdc TOFF µs — 10
Safe Operating Area
DC Tests: TC = +25 °C, I Cycle, t = 1.0 s
Test 1: VCE = 8.75 Vdc, IC = 20 Adc
Test 2: VCE = 30 Vdc, IC = 5.8 Adc
Test 3: VCE = 80 Vdc, IC = 100 mAdc
VCE = 100 Vdc, IC = 100 mAdc
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
PNP Darlington Power Silicon Transistor
Rev. V2
2N6286 & 2N6287
2
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2
Absolute Maximum Ratings
2. Derate linearly @ 1 mW / °C for TA >+25°C.
Ratings Symbol 2N6286 2N6287 Units
Collector - Emitter Voltage VCEO -80 -100 Vdc
Collector - Base Voltage VCBO -80 -100 Vdc
Emitter - Base Voltage VEBO -7 Vdc
Collector Current IC -20 Adc
Base Current IB -0.5 Adc
Total Power Dissipation
@ TA = +25°C2
@ TA = +100°C
PT
175
87.5
W
Operating & Storage Temperature Range TOP, TSTG -65 to +200 °C
Thermal Characteristics
Characteristics Symbol Max. Value
Thermal Resistance, Junction to Case RθJC 0.857°C/W
PNP Darlington Power Silicon Transistor
Rev. V2
2N6286 & 2N6287
3
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
3
Outline Drawing
PNP Darlington Power Silicon Transistor
Rev. V2
2N6286 & 2N6287
4
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
4
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