106 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SG3/EE-SG3-B
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Dust-proof model.
Solder terminal model (EE-SG3).
PCB terminal model (EE-SG3-B).
Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm 6 ±0.375
6 < mm 10 ±0.45
10 < mm 18 ±0.55
18 < mm 30 ±0.65
Unless otherwise specified, the
tolerances are as shown below.
Four, 1.5
Four, 0.
5
Optical axis
Cross section AA
Cross section AA
Four, 0.25
19±0.1
25.4±0.2
3.6±0.2
7.62±0.3 2.54±0.3
2.54
0.8 0.6
1.2
13
Two, 3.2±0.2
dia. holes Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL2 mA min., 40 mA max. IF = 15 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt-
age
VCE (sat) 0.1 V typ., 0.4 V max. IF = 30 mA, IL = 1 mA
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Be sure to read Precautions on page 25.
EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 107
Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. CollectorEmitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
(Center of
optical axis)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
CollectorEmitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
Ta = 30°C
Ta = 25°C
Ta = 70°C
Ta = 25°C
V
CE
= 10 V
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Ta = 25°CV
CE
= 10 V
0 lx
I
F
= 20 mA
V
CE
= 5 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25
°
C
VCC = 5 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
I
F
= 25 mA
Ambient temperature Ta (°C)
I
F
P
C
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
01.52.0 1.0 0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)