Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
15 dB Gain at Pin (-10 dBm)
15% Power Added Efficiency
28 dBm Saturated Power Output (typ)
Features
RMPA39000
37-40 GHz GaAs MMIC Power
Amplifier
Electrical
Characteristics
50 ohm system,
Vd = +5V,
Quiescent current =
Idq = 700 mA
Parameter Typ Unit
Frequency Range 37 - 40 GHz
Gate Supply Voltage (Vg)1- 0.15 V
Drain Supply Voltage (Vd) + 5 V
Quiescent Gate Current (Ig) < 0.1 mA
Quiescent Drain Supply Current (Idq)2700 mA
Gain at Pin = -10 dBm 15 dB
Gain Variation vs Frequency +/-1 dB
Power Output at Pin = 0 dBm 15 dBm
Power Output at 1 dB Compression 27 dBm
Notes:
1. Typical range of the negative gate voltages is -0.3 to 0.0V to set typical Idq of 700 mA.
2. Typical range of Idq is 500 to 900 mA to achieve the desired P1 dB.
Absolute
Maximum
Ratings
Parameter Symbol Value Units
Positive DC Voltage (5V Typical) Vd + 6 Volts
Negative DC Voltage Vg - 2 Volts
Simultaneous (Vd-Vg) Vdg + 8 Volts
RF Input Power (from 50 ohm source) PIN +20 dBm
Operating Base plate Temperature TC-30 to +90 °C
Storage Temperature Range TStg -55 to +125 °C
Thermal Resistance (Channel to Backside) Rjc 15 °C/W
Parameter Typ Unit
Power Output (Saturated) 28 dBm
Drain Current at Pin = -10 dBm 700 mA
Drain Current at Pin = 0 dBm 700 mA
Drain Current at P1 dB Compression 750 mA
Drain Current at Saturated Pout 750 mA
Power Added Efficiency (PAE):
at P1 dB 15 %
Input Return Loss (Pin = -10 dBm) 8 dB
Output Return Loss (Pin = -10 dBm) 7 dB
The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to
multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs
MMIC amplifier chip utilizing Raytheon’s advanced 0.15 µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
RF IN RF OUT
Drain Supply (Vd= +5V)
(VDA & VDB)
Gate Supply
(VGA & VGB)
Ground
(Back of Chip)
MMIC Chip
0.008 0.160
0.169
0
0.015
0.061
0.103
0.114
0.104
0.059
0
0.004 0.165
0.068
0
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Thickness=0.002”.
Back of Chip is
RF and DC Ground)
Dimensions in inches
RMPA39000
37-40 GHz GaAs MMIC Power
Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply (Vd= +5V)
(Connect to both VDA & VDB)
Gate Supply (Vg)
(VGA and/or VGB)
100 pF
10,000 pF
L
L
Bond Wire L’s
Bond Wire L’s
RF IN RF OUT
Ground
(Back of Chip)
MMIC Chip
100 pF
10,000 pF
L
L
Note:
Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Vd
(Positive)
100 pF 100 pF
100 pF100 pF
10,000 pF 10,000 pF
10,000 pF
Cap
10,000 pF
Vg
(Negative)
Vg
(Negative) Vd
(Positive)
RF
Input RF
Output
5mil Thk
Alumina
50-Ohm 5 mil Thk
Alumina
50-Ohm
2 mil Gap
L< 0.015”
(4 Plcs)
Die-Attach
80Au/20Sn
Figure 4
Recommended
Assembly and Bonding
Diagram
RMPA39000
37-40 GHz GaAs MMIC Power
Amplifier
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Bias Conditions: Vd=5V lq=700mA
CAUTION: LOSS OF GATE VOLTAGES (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for biasing and
operation Step 1: Turn off RF input power
Step 2: Connect the DC Supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=700 mA
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power
(ii) Turn down and off drain voltage (Vd)
(iii) Turn down and off gate bias voltage (Vg)
Performance
Data Output Power and Gain Measurements
Output Power, Power Added Efficiency, Gain and Compression
30
25
20
15
10
5
20
15
10
5
0
-5
-20 -15 -10 -5 0 5 10 15 20
Pout MAX: 27.98 dBm
GAIN
Pout PAE
COMP
Pin (dBm)
Gain & Comp (dB), PAE (%)
Pout (dBm)
X
X
X
X
X
f=39 GHz. Vd:5.0V. Vg:-0.17V. lq: 700mA.
RMPA39000
37-40 GHz GaAs MMIC Power
Amplifier
35
30
25
20
15
10
37 37.5 38 38.5 39 39.5 40
Frequency (GHz)
Gain
Pout
35
30
25
20
15
10
Output Power (dBm
)
GAIN AT POWER (dB)
Pin=12.5dBm
Pin=10dBm
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
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