2N6609 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)16 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (oC)200o I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)16 @I(B) (A) (Test Condition)3.2 h(FE) Min. Current gain.15 h(FE) Max. Current gain.60 @I(C) (A) (Test Condition)8.0 @V(CE) (V) (Test Condition)4.0 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)4.0 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.