2N6609 Transistors
Si PNP Power BJT
Military/High-RelN
V(BR)CEO (V)140
V(BR)CBO (V)160
I(C) Max. (A)16
Absolute Max. Power Diss. (W)150#
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)2.0m¶
@V(CBO) (V) (Test Condition)140
V(CE)sat Max. (V)4.0
@I(C) (A) (Test Condition)16
@I(B) (A) (Test Condition)3.2
h(FE) Min. Current gain.15
h(FE) Max. Current gain.60
@I(C) (A) (Test Condition)8.0
@V(CE) (V) (Test Condition)4.0
f(T) Min. (Hz) Transition Freq200M
@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)4.0
t(d) Max. (s) Delay time.
t(r) Max. (s) Rise time
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.
t(f) Max. (s) Fall time.
t(off) Max. (s) Off time
Package StyleTO-3
Mounting StyleT
Pinout Equivalence Code3-4
Ckt. (Pinout) NumberTR00300004
Description