LM536025QPWPRQ1 - TEXAS INSTRUMENTS

1. Product profile

1.1 General description

400 W LDMOS power transistor with improved video bandwidth for base station

applications at frequencies from 1805 MHz to 1995 MHz.

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF;

carrier spacing = 5 MHz; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz.

1.2 Features and benefits

Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical)

High efficiency

Low thermal resistance providing excellent thermal stability

Designed for broadband operation

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Design optimized for gull-wing

Excellent ruggedness

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to

1995 MHz frequency range

BLF8G20LS-400PV;

BLF8G20LS-400PGV

Power LDMOS transistor

Rev. 5 — 1 September 2015 Product data sheet

Table 1. Typical performance

Typical RF performance at Tcase = 25



C in a common source class-AB production test circuit, tested

on straight lead device.

Test signal f IDq VDS PL(AV) GpDACPR5M

(MHz) (mA) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 1805 to 1995 3400 28 95 19 28 33 [1]

Product data sheet Rev. 5 — 1 September 2015 2 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF8G20LS-400PV (SOT1242B)

1drain1

2drain2

3gate1

4gate2

5source [1]

6 decoupling1

7 decoupling2

8n.c.

9n.c.

BLF8G20LS-400PGV (SOT1242C)

1drain1

2drain2

3gate1

4gate2

5source [1]

6 decoupling1

7 decoupling2

8n.c.

9n.c.

61 2

aaa-007816

627

aaa-007816

Table 3. Ordering information

Type number Package

Name Description Version

BLF8G20LS-400PV - earless flanged ceramic package; 8 leads SOT1242B

BLF8G20LS-400PGV - earless flanged ceramic package; 8 leads SOT1242C

Product data sheet Rev. 5 — 1 September 2015 3 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

4. Limiting values

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

6. Characteristics

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

Tstg storage temperature 65 +150 C

Tjjunction temperature [1] - 225 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 80 W 0.23 K/W

Table 6. DC characteristics

Tj = 25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID= 3.0 mA 65 - - V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 300 mA 1.5 1.9 2.3 V

IDSS drain leakage current VGS = 0 V; VDS =28V - - 3.0 A

IDSX drain cut-off current VGS =V

GS(th) + 3.75 V;

VDS =10V

51.5 - A

IGSS gate leakage current VGS =11 V; V

DS = 0 V - - 300 nA

gfs forward transconductance VDS = 10 V; ID=15A - 20.6 - S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID= 10.5 A

- 0.055 - 

Table 7. RF characteristics

Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 1-64 DPCH; f1= 1807.5 MHz; f2= 1812.5 MHz; f3= 1872.5 MHz; f4= 1877.5 MHz;

RF performance at VDS =28V; I

Dq =3400mA; T

case =25



C; unless otherwise specified; in a

class-AB production test circuit, tested on straight lead device.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain PL(AV) =95W 17.8 19 - dB

RLin input return loss PL(AV) =95W - 12 6dB

Ddrain efficiency PL(AV) =95W 24 28 - %

ACPR5M adjacent channel power ratio (5 MHz) PL(AV) =95W - 33 28 dBc

Product data sheet Rev. 5 — 1 September 2015 4 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLF8G20LS-400PV and BLF8G20LS-400PGV are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =28V; I

Dq = 3300 mA; 2-carrier W-CDMA signal; PL= 200 W;

fc= 1800 MHz; 5 MHz spacing, 46 % clipping.

7.2 Impedance information

[1] ZS and ZL defined in Figure 1.

Table 8. Typical impedance for the top-half of the push-pull package

Measured load-pull data; IDq = 1800 mA; VDS = 28 V; Tcase = 25



C, water cooled.

f ZS[1] ZL[1]

(MHz) () ()

BLF8G20LS-400PV (straight lead)

1800 4.1  j4.66 4.1  j4.5

1840 5.2  j3.6 4.4  j4.4

1880 4.6  j1.45 4.85  j4.25

1930 2.8  j0.3 4.5  j4.3

1960 2.1  j0.5 5.5  j3.5

1990 1.56  j0.6 5.5  j3.4

BLF8G20LS-400PGV (gull-wing)

1800 3.7  j7.6 4.2  j6.8

1840 4.34  j6.1 4.4  j6.7

1880 4.75  j5.2 4  j6.4

1930 3.17  j3.4 4.6  j6.5

1960 2  j3.05 5.8  j5.5

1990 2.5  j2.6 5.8 j5.7

Fig 1. Definition of transistor impedance

001aaf059

drain

gate

Product data sheet Rev. 5 — 1 September 2015 5 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.3 VBW in class-AB operation

The BLF8G20LS-400PV and BLF8G20LS-400PGV have a video bandwidth of 120 MHz

(typical) when measured in a class-AB test circuit operating in the 1800 MHz to 1880 MHz

frequency band for VDS = 28 V and IDq = 3.3 A, where the VBW is defined as the location

of the resonance in the base-band impedance measurement obtained using a

low-frequency probe.

The VBW measurement based on the 2-tone IMD test as a function of carrier spacing is

shown below.

(1) IMD low

(2) IMD high

Fig 2. VBW capacity in a class-AB test circuit

aaa-007817

1 10 102

-80

-60

-40

-20

carrier spacing (MHz)

IMD

IMDIMD

(dBc)

(dBc)(dBc)

(1)(1)(1)

(2)(2)(2)

(1)(1)(1)

(2)(2)(2)

(1)(1)(1)

(2)(2)(2)

IMD3IMD3IMD3

IMD5

IMD5IMD5

IMD7

IMD7IMD7

Product data sheet Rev. 5 — 1 September 2015 6 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.4 Test circuit

Printed-Circuit Board (PCB): Rogers 4350B; r = 3.66; thickness = 0.762 mm;

thickness copper plating = 35 m.

See Table 9 for a list of components.

Fig 3. Component layout

Table 9. List of components

See Figure 3 for component layout.

Component Description Value Remarks

C1, C5, C16, C20 multilayer ceramic chip capacitor 10 F, 50 V Murata, SMD 2220

C2, C6, C15, C19, C24,

C25

multilayer ceramic chip capacitor 4.7 F, 50 V Murata

C3, C7, C14, C18 multilayer ceramic chip capacitor 1 nF ATC100B

C4, C8, C9, C10, C13,

C17, C21

multilayer ceramic chip capacitor 24 pF ATC100B

C11, C12 multilayer ceramic chip capacitor 100 pF ATC100B

C22, C23 electrolytic capacitor 2200 F, 63 V

R1, R2 resistor 10 SMD 1206

R3, R5 resistor 5.1 SMD 1206

R4 resistor 33 SMD 1206

R6 resistor 100 SMD 1206

C21

C15

C16

C24 C13

C14

C19

C20

C17

C18

C10

C11

C12

R4R6

60 mm

50 mm

input

C6 C7

C22

C23

output

aaa-007818

C25

50 mm

Product data sheet Rev. 5 — 1 September 2015 7 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.5 Graphical data

7.5.1 Pulsed CW

VDS = 28 V; IDq = 3400 mA; tp= 100 s; =10%.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA; tp= 100 s; =10%.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 4. Power gain as a function of output power;

typical values

Fig 5. Drain efficiency as a function of output power;

typical values

aaa-010585

38 42 46 50 54 58

PL (dBm)

(dB)(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010586

35 39 43 47 51 55 59

PL (dBm)

ηD

(%)(%)(%)

(3)(3)(3)

(2)(2)(2)

(1)(1)(1)

Product data sheet Rev. 5 — 1 September 2015 8 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.5.2 IS-95

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 6. Power gain as a function of output power;

typical values

Fig 7. Drain efficiency as a function of output power;

typical values

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 8. Adjacent channel power ratio (885 kHz) as a

function of output power; typical values

Fig 9. Adjacent channel power ratio (1980 kHz) as a

function of output power; typical values

aaa-010587

39 41 43 45 47 49 51 53

PL (dBm)

(dB)(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010588

39 41 43 45 47 49 51 53

PL (dBm)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010589

39 41 43 45 47 49 51 53

-70

-60

-50

-40

-30

PL (dBm)

ACPR

ACPR885k885k

ACPR885k

(dBc)(dBc)(dBc)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010590

39 41 43 45 47 49 51 53

-80

-75

-70

-65

-60

-55

-50

PL (dBm)

ACPR

_ ACPR1980k1980k

ACPR1980k

(dBc)(dBc)(dBc)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

Product data sheet Rev. 5 — 1 September 2015 9 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.5.3 1-Carrier W-CDMA

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 10. Peak-to-average ratio as a function of output

power; typical values

Fig 11. Peak output power as a function of output

power; typical values

aaa-010591

39 41 43 45 47 49 51 53

PL (dBm)

PAR

PARPAR

(dB)

(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010592

39 41 43 45 47 49 51 53

PL (dBm)

PL(M)L(M)

PL(M)

(dBm)(dBm)(dBm)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 12. Power gain as a function of output power;

typical values

Fig 13. Drain efficiency as a function of output power;

typical values

aaa-010593

38 40 42 44 46 48 50 52 54

PL (dBm)

(dB)(dB)(dB)

(1)(1)(1)

(2)

(2)(2)

(3)

(3)(3)

aaa-010594

39 41 43 45 47 49 51 53 55

PL (dBm)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

Product data sheet Rev. 5 — 1 September 2015 10 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

7.5.4 2-Carrier W-CDMA

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 14. Peak-to-average ratio as a function of output

power; typical values

Fig 15. Input return loss as a function of output

power; typical values

aaa-010595

39 41 43 45 47 49 51 53 55

PL (dBm)

PAR

PARPAR

(dB)

(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010596

39 41 43 45 47 49 51 53 55

PL (dBm)

RLinin

RLin

(dB)(dB)(dB)

(1)(1)(1)

(2)

(2)(2)

(3)

(3)(3)

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 16. Power gain as a function of output power;

typical values

Fig 17. Drain efficiency as a function of output power;

typical values

aaa-010597

39 41 43 45 47 49 51 53 55

PL (dBm)

(dB)(dB)(dB)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010598

39 41 43 45 47 49 51 53 55

PL (dBm)

ηD

(%)(%)(%)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

Product data sheet Rev. 5 — 1 September 2015 11 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 18. Input return loss as a function of output power; typical values

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

VDS = 28 V; IDq = 3400 mA.

(1) f = 1805 MHz

(2) f = 1840 MHz

(3) f = 1880 MHz

Fig 19. Adjacent channel power ratio (5 MHz) as a

function of output power; typical values

Fig 20. Adjacent channel power ratio (10 MHz) as a

function of output power; typical values

aaa-010599

39 41 43 45 47 49 51 53 55

PL (dBm)

RLinin

RLin

(dB)(dB)(dB)

(1)(1)(1)

(2)

(2)(2)

(3)

(3)(3)

aaa-010600

39 41 43 45 47 49 51 53 55

-60

-50

-40

-30

-20

PL (dBm)

ACPR

ACPR5M5M

ACPR5M

(dBc)(dBc)(dBc)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

aaa-010601

39 41 43 45 47 49 51 53 55

-60

-50

-40

-30

-20

PL (dBm)

ACPR

ACPR10M10M

ACPR10M

(dBc)(dBc)(dBc)

(1)(1)(1)

(2)(2)(2)

(3)(3)(3)

Product data sheet Rev. 5 — 1 September 2015 12 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

8. Package outline

Fig 21. Package outline SOT1242B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1242B

sot1242b_po

12-11-28

15-07-21

inches

max

nom

min

0.217

0.165

0.055

0.045

0.007

0.004

1.242

0.218

1.241

1.219

0.374

0.366

0.375

0.365

Note

1. Millimeter dimensions are derived from the original inch dimensions.

2. Dimension is measured 0.030 inch (0.76 mm) from the body.

Earless flanged ceramic package; 8 leads SOT1242B

0.465

0.455

0.010

0.785

0.745

0.089

0.079

Unit(1)

max

nom

min

5.5

4.2

1.41

1.14

0.18

0.10

31.55

30.94

13.72 29.47

0.540 1.16

31.52

30.96

9.50

9.30

9.53

9.27

2.26

2.01

Dimensions

11.81

11.56

cDD

0.25 0.10

0.004

e1EE

0.069

0.059

1.75

1.50

19.94

18.92

Q(2) U1U2w2y

0.25

0.010

0 5 10 mm

scale

32.39

32.13

10.29

10.03

1.275

1.265

0.405

0.395

b1Q

83 4 9

61 2

w2B

EE1

U1c

v A

Product data sheet Rev. 5 — 1 September 2015 13 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

Fig 22. Package outline SOT1242C

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1242C

sot1242c_po

12-05-15

12-05-30

Note

1. Millimeter dimensions are derived from the original inch dimensions.

Earless flanged ceramic package; 8 leads SOT1242C

Unit(1)

max

nom

min

5.5

4.2

1.41

1.14

31.55

30.94

31.52

30.96

13.72

9.50

9.30

1.75

1.50

10.29

10.03

Dimensions

bDD

1eE

9.53

9.27

32.39

32.13

0.195

0.045

U2vyw2

inches

max

nom

min

0.217

0.165

0.055

0.045

11.81

11.56

0.465

0.455

0.18

0.10

0.007

0.004

1.242

1.218

1.241

1.219

0.540

29.47

1.16

0.374

0.366

0.069

0.059

0.405

0.395

0.375

0.365

1.38

0.98

0.055

0.039

1.275

1.265

0.008

0.002

14.70

14.50

0.579

0.571

0.25

0.01

0.25

0.01

0.006

scale

10 mm05

1627

3894

w2B

0.15

7°

0°

7°

0°

detail X

0.3 mm gauge plane

Product data sheet Rev. 5 — 1 September 2015 14 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

9. Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

3GPP 3rd Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical Channel

ESD ElectroStatic Discharge

IMD InterModulation Distortion

IS-95 Interim Standard 95

LDMOS Laterally Diffused Metal Oxide Semiconductor

MTF Median Time to Failure

PAR Peak-to-Average Ratio

SMD Surface Mounted Device

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF8G20LS-400PV_LS-400PGV#5 20150901 Product data sheet BLF8G20LS-400PV

_LS-400PGV v.4

Modifications: •The format of this document has been redesigned to comply with the new

identity guidelines of Ampleon.

•Legal texts have been adapted to the new company name where appropriate.

BLF8G20LS-400PV_LS-400PGV v.4 20150728 Product data sheet - BLF8G20LS-400PV

_LS-400PGV v.3

BLF8G20LS-400PV_LS-400PGV v.3 20140603 Product data sheet - BLF8G20LS-400PV

_LS-400PGV v.2

BLF8G20LS-400PV_LS-400PGV v.2 20130625 Product data sheet - BLF8G20LS-400PV

_LS-400PGV v.1

BLF8G20LS-400PV_LS-400PGV v.1 20130606 Preliminary data sheet - -

Product data sheet Rev. 5 — 1 September 2015 15 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’ aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

Ampleon product can reasonably be expected to result in personal injury,

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 1 September 2015 16 of 17

BLF8G20LS-400P(G)V

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’ specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’ standard warranty and Ampleon’ product

specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own Any

reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

13. Contact information

For more information, please visit:

http://www.ampleon.com

For sales office addresses, please visit:

http://www.ampleon.com/sales

BLF8G20LS-400P(G)V

Power LDMOS transistor

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 1 September 2015

Document identifier: BLF8G20LS-400PV_LS-400PGV#5

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.1 Ruggedness in class-AB operation . . . . . . . . . 4

7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4

7.3 VBW in class-AB operation . . . . . . . . . . . . . . . 5

7.4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.5.1 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.5.2 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

7.5.3 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9

7.5.4 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 10

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

9 Handling information. . . . . . . . . . . . . . . . . . . . 14

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13 Contact information. . . . . . . . . . . . . . . . . . . . . 16

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17